Analog Devices OP162GP, OP462HRU, OP462GS, OP462GP, OP462DS Datasheet

a

OP162/OP262/OP462

15 MHz Rail-to-Rail

Operational Amplifiers

FEATURES
Wide Bandwidth: 15 MHz
Low Offset Voltage: 325 ␮V max
Low Noise: 9.5 nV/√Hz @ 1 kHz
Single-Supply Operation: +2.7 V to +12 V
Rail-to-Rail Output Swing
Low TCV

OS

: 1 ␮V/ⴗC typ
High Slew Rate: 13 V/␮s
No Phase Inversion
Unity Gain Stable

APPLICATIONS
Portable Instrumentation
Sampling ADC Amplifier
Wireless LANs
Direct Access Arrangement
Office Automation

GENERAL DESCRIPTION

The OP162 (single), OP262 (dual), OP462 (quad) rail-to-rail
15 MHz amplifiers feature the extra speed new designs require,
with the benefits of precision and low power operation. With
their incredibly low offset voltage of 45 µV (typ) and low noise,
they are perfectly suited for precision filter applications and
instrumentation. The low supply current of 500 µA (typ) is
critical for portable or densely packed designs. In addition, the
rail-to-rail output swing provides greater dynamic range and
control than standard video amplifiers provide.

These products operate from single supplies as low as +2.7 V to
dual supplies of ±6 V. The fast settling times and wide output
swings recommend them for buffers to sampling A/D converters.
The output drive of 30 mA (sink and source) is needed for
many audio and display applications; more output current can
be supplied for limited durations.

The OP162 family is specified over the extended industrial
temperature range (–40°C to +125°C). The single OP162
and dual OP262 are available in 8-lead PDIP, SOIC and
TSSOP packages. The quad OP462 is available in 14-lead
PDIP, narrow-body SOIC and TSSOP packages.

PIN CONFIGURATIONS

8-Lead Narrow-Body SO 8-Lead Plastic DIP

(S Suffix) (P Suffix)

NC = NO CONNECT

8

7

6

5

1

2

3

4

NULL

V+

NC

NULL

OUT A

–IN A

+IN A

V–

OP162

NC = NO CONNECT

NULL

V+

NC

NULL

OUT A

–IN A
+IN A

V–

1

4

5

8

OP162

8-Lead TSSOP

(RU Suffix)

OP162

1

4

5

8

NULL
–IN A
+IN A

V–

NULL
V+
OUT A
NC

NC = NO CONNECT

8-Lead Narrow-Body SO 8-Lead Plastic DIP

(S Suffix) (P Suffix)

8

7

6

5

1

2

3

4

OP262

OUT A

V+

+IN B

–IN B

OUT B

–IN A

+IN A

V–

OUT A

V+

OUT B–IN A

+IN A

V–

+IN B

–IN B

1

4

5

8

OP262

8-Lead TSSOP

(RU Suffix)

OP262

1

4

5

8

OUT A

–IN A
+IN A

V–

V+
OUT B
–IN B
+IN B

14-Lead Narrow-Body SO 14-Lead Plastic DIP

(S Suffix) (P Suffix)

14

13

12

11

10

9

8

1

2

3

4

7

6

5

OUT A

V–

+IN D

–IN D

OUT D

–IN A

+IN A

V+

OUT C

–IN C

+IN C

+IN B

–IN B

OUT B

OP462

1

7

8

14

OP462

OUT A

–IN A
+IN A

V+
+IN B
–IN B

OUT B

V–

+IN D

–IN D

OUT D

OUT C

–IN C

+IN C

14-Lead TSSOP

(RU Suffix)

OP462

1

78

14

OUT A

–IN A
+IN A

V+
+IN B
–IN B

OUT B

OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C

REV. C

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
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Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

OP162/OP262/OP462–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP162G, OP262G, OP462G, 45 325 µV
–40°C ≤ T

A

≤ +125°C 800 µV

H Grade, –40°C ≤ T

A

≤ +125°C1mV

D Grade, –40°C ≤ T

A

≤ +125°C 0.8 3 mV

5mV

Input Bias Current I

B

360 600 nA

–40°C ≤ T

A

≤ +125°C 650 nA

Input Offset Current I

OS

±2.5 ±25 nA

–40°C ≤ T

A

≤ +125°C ±40 nA

Input Voltage Range V

CM

0+4V

Common-Mode Rejection CMRR 0 V ≤ V

CM

≤ +4.0 V,

–40°C ≤ T

A

≤ +125°C 70 110 dB

Large Signal Voltage Gain A

VO

RL = 2 kΩ, 0.5 ≤ V

OUT

≤ 4.5 V 30 V/mV

R

L

= 10 kΩ, 0.5 ≤ V

OUT

≤ 4.5 V 65 88 V/mV

R

L

= 10 kΩ, –40°C ≤ TA ≤ +125°C 40 V/mV

Long-Term Offset Voltage V

OS

G Grade

1

600 µV

Offset Voltage Drift ∆V

OS

/∆T Note 2 1 µV/°C

Bias Current Drift ∆IB/∆T 250 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

OH

IL = 250 µA, –40°C ≤ TA ≤ +125°C 4.95 4.99 V
I

L

= 5 mA 4.85 4.94 V

Output Voltage Swing Low V

OL

IL = 250 µA, –40°C ≤ TA ≤ +125°C1450mV
I

L

= 5 mA 65 150 mV

Short Circuit Current I

SC

Short to Ground ±80 mA

Maximum Output Current I

OUT

±30 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

S

= +2.7 V to +7 V 120 dB

–40°C ≤ T

A

≤ +125°C90 dB

Supply Current/Amplifier I

SY

OP162, V

OUT

= 2.5 V 600 750 µA

–40°C ≤ T

A

≤ +125°C1mA

OP262, OP462, V

OUT

= 2.5 V 500 700 µA

–40°C ≤ TA ≤ +125°C 850 µA

DYNAMIC PERFORMANCE

Slew Rate SR 1 V < V

OUT

< 4 V, RL = 10 kΩ 10 V/µs

Settling Time t

S

To 0.1%, AV = –1, VO = 2 V Step 540 ns

Gain Bandwidth Product GBP 15 MHz
Phase Margin φ

m

61 Degrees

NOISE PERFORMANCE

Voltage Noise e

n

p-p 0.1 Hz to 10 Hz 0.5 µV p-p

Voltage Noise Density e

n

f = 1 kHz 9.5 nV/√Hz

Current Noise Density i

n

f = 1 kHz 0.4 pA/√Hz

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subj]ect to change without notice.

(@ VS = +5.0 V, VCM = 0 V, TA = +25ⴗC, unless otherwise noted)

REV. C

–2–

OP162/OP262/OP462–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP162G, OP262G, OP462G 50 325 µV
H Grade, –40°C ≤ T

A

≤ +125°C1mV

D Grade, –40°C ≤ T

A

≤ +125°C 0.8 3 mV

5mV

Input Bias Current I

B

360 600 nA

Input Offset Current I

OS

±2.5 ±25 nA

Input Voltage Range V

CM

0+2V

Common-Mode Rejection CMRR 0 V ≤ V

CM

≤ +2.0 V,

–40°C ≤ T

A

≤ +125°C 70 110 dB

Large Signal Voltage Gain A

VO

RL = 2 kΩ, 0.5 V ≤ V

OUT

≤ 2.5 V 20 V/mV

R

L

= 10 kΩ, 0.5 V ≤ V

OUT

≤ 2.5 V 20 30 V/mV

Long-Term Offset Voltage V

OS

G Grade

1

600 µV

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

OH

IL = 250 µA 2.95 2.99 V
I

L

= 5 mA 2.85 2.93 V

Output Voltage Swing Low V

OL

IL = 250 µA1450mV
IL = 5 mA 66 150 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

S

= +2.7 V to +7 V,

–40°C ≤ T

A

≤ +125°C 60 110 dB

Supply Current/Amplifier I

SY

OP162, V

OUT

= 1.5 V 600 700 µA

–40°C ≤ T

A

≤ +125°C1mA

OP262, OP462, V

OUT

= 1.5 V 500 650 µA

–40°C ≤ TA ≤ +125°C 850 µA

DYNAMIC PERFORMANCE

Slew Rate SR R

L

= 10 kΩ 10 V/µs

Settling Time t

S

To 0.1%, AV = –1, VO = 2 V Step 575 ns

Gain Bandwidth Product GBP 15 MHz
Phase Margin φ

m

59 Degrees

NOISE PERFORMANCE

Voltage Noise e

n

p-p 0.1 Hz to 10 Hz 0.5 µV p-p

Voltage Noise Density e

n

f = 1 kHz 9.5 nV/√Hz

Current Noise Density i

n

f = 1 kHz 0.4 pA/√Hz

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

Specifications subject to change without notice.

OP162/OP262/OP462

REV. C

–3–

(@ VS = +3.0 V, VCM = 0 V, TA = +25ⴗC, unless otherwise noted)

OP162/OP262/OP462–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP162G, OP262G, OP462G 25 325 µV
–40°C ≤ T

A

≤ +125°C 800 µV

H Grade, –40°C ≤ T

A

≤ +125°C1mV

D Grade, –40°C ≤ T

A

≤ +125°C 0.8 3 mV

5mV

Input Bias Current I

B

260 500 nA

–40°C ≤ T

A

≤ +125°C 650 nA

Input Offset Current I

OS

±2.5 ±25 nA

–40°C ≤ T

A

≤ +125°C ±40 nA

Input Voltage Range V

CM

–5 +4 V

Common-Mode Rejection CMRR –4.9 V ≤ V

CM

≤ +4.0 V,

–40°C ≤ T

A

≤ +125°C 70 110 dB

Large Signal Voltage Gain A

VO

RL = 2 kΩ, –4.5 V ≤ V

OUT

≤ 4.5 V 35 V/mV

R

L

= 10 kΩ, –4.5 V ≤ V

OUT

≤ 4.5 V 75 120 V/mV

–40°C ≤ T

A

≤ +125°C 25 V/mV

Long-Term Offset Voltage V

OS

G Grade

1

600 µV

Offset Voltage Drift ∆V

OS

/∆T Note 2 1 µV/°C

Bias Current Drift ∆IB/∆T 250 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

OH

IL = 250 µA, –40°C ≤ TA ≤ +125°C 4.95 4.99 V
I

L

= 5 mA 4.85 4.94 V

Output Voltage Swing Low V

OL

IL = 250 µA, –40°C ≤ TA ≤ +125°C –4.99 –4.95 V
I

L

= 5 mA –4.94 –4.85 V

Short Circuit Current I

SC

Short to Ground ±80 mA

Maximum Output Current I

OUT

±30 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

S

= ±1.35 V to ±6 V,

–40°C ≤ T

A

≤ +125°C 60 110 dB

Supply Current/Amplifier I

SY

OP162, V

OUT

= 0 V 650 800 µA

–40°C ≤ T

A

≤ +125°C 1.15 mA

OP262, OP462, V

OUT

= 0 V 550 775 µA

–40°C ≤ T

A

≤ +125°C1mA

Supply Voltage Range V

S

+3.0 (±1.5) +12 (± 6) V

DYNAMIC PERFORMANCE

Slew Rate SR –4 V < V

OUT

< 4 V, RL = 10 kΩ 13 V/µs

Settling Time t

S

To 0.1%, AV = –1, VO = 2 V Step 475 ns

Gain Bandwidth Product GBP 15 MHz
Phase Margin φ

m

64 Degrees

NOISE PERFORMANCE

Voltage Noise e

n

p-p 0.1 Hz to 10 Hz 0.5 µV p-p

Voltage Noise Density e

n

f = 1 kHz 9.5 nV/√Hz

Current Noise Density i

n

f = 1 kHz 0.4 pA/√Hz

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

(@ VS = ⴞ5.0 V, VCM = 0 V, TA = +25ⴗC, unless otherwise noted)

REV. C

–4–

–5–

REV. C

OP162/OP262/OP462

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V

Input Voltage

1

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 6 V

Differential Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . ±0.6 V

Internal Power Dissipation

Plastic DIP (P) . . . . . . . . . . . . . . . Observe Derating Curves

SOIC (S) . . . . . . . . . . . . . . . . . . . Observe Derating Curves

TSSOP (RU) . . . . . . . . . . . . . . . . Observe Derating Curves

Output Short-Circuit Duration . . . . Observe Derating Curves

Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range . . . . . . . . . . –40°C to +125°C

Junction Temperature Range . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 10 sec) . . . . . . . +300°C

Package Type ␪

JA

3

␪

JC

Units

8-Lead Plastic DIP (P) 103 43 °C/W
8-Lead SOIC (S) 158 43 °C/W
8-Lead TSSOP (RU) 240 43 °C/W
14-Lead Plastic DIP (P) 83 36 °C/W
14-Lead SOIC (S) 120 36 °C/W
14-Lead TSSOP (RU) 180 35 °C/W

NOTES

1

For supply voltages greater than 6 volts, the input voltage is limited to less than or
equal to the supply voltage.

2

For differential input voltages greater than 0.6 volts the input current should be
limited to less than 5 mA to prevent degradation or destruction of the input devices.

3

θJA is specified for the worst case conditions, i.e., θ

JA

is specified for device in socket

for P-DIP package; θ

JA

is specified for device soldered in circuit board for SOIC and

TSSOP packages.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP162/OP262/OP462 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP162GP –40°C to +125°C 8-Lead Plastic DIP N-8
OP162GS –40°C to +125°C 8-Lead SOIC SO-8
OP162HRU –40°C to +125°C 8-Lead TSSOP RU-8
OP262DRU –40°C to +125°C 8-Lead TSSOP RU-8
OP262GP –40°C to +125°C 8-Lead Plastic DIP N-8
OP262GS –40°C to +125°C 8-Lead SOIC SO-8
OP262HRU –40°C to +125°C 8-Lead TSSOP RU-8
OP462DRU –40°C to +125°C 14-Lead TSSOP RU-14
OP462DS –40°C to +125°C 14-Lead SOIC SO-14
OP462GP –40°C to +125°C 14-Lead Plastic DIP N-14
OP462GS –40°C to +125°C 14-Lead SOIC SO-14
OP462HRU –40°C to +125°C 14-Lead TSSOP RU-14

WARNING!

ESD SENSITIVE DEVICE