The OP162 (single), OP262 (dual), and OP462 (quad) rail-torail 15 MHz amplifiers feature the extra speed new designs
require, with the benefits of precision and low power operation.
With their incredibly low offset voltage of 45 µV (typical) and
low noise, they are perfectly suited for precision filter applications and instrumentation. The low supply current of 500 µA
(typical) is critical for portable or densely packed designs. In
addition, the rail-to-rail output swing provides greater dynamic
range and control than standard video amplifiers.
These products operate from single supplies as low as 2.7 V to
dual supplies of ±6 V. The fast settling times and wide output
swings recommend them for buffers to sampling A/D converters.
The output drive of 30 mA (sink and source) is needed for
many audio and display applications; more output current can
be supplied for limited durations. The OPx62 family is specified
over the extended industrial temperature range (–40°C to
+125°C). The single OP162 amplifiers are available in 8-lead
SOIC, MSOP, and TSSOP packages. The dual OP262 amplifiers
are available in 8-lead SOIC and TSSOP packages. The quad
OP462 amplifiers are available in 14-lead, narrow-body SOIC
and TSSOP packages.
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
@ VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1. Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
–40°C ≤ TA ≤ +125°C 800 µV
H grade, –40°C ≤ TA ≤ +125°C 1 mV
D grade 0.8 3 mV
–40°C ≤ TA ≤ +125°C 5 mV
Input Bias Current I
B
–40°C ≤ TA ≤ +125°C 650 nA
Input Offset Current I
OS
–40°C ≤ TA ≤ +125°C ±40 nA
Input Voltage Range V
CM
Common-Mode Rejection CMRR 0 V ≤ VCM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C 70 110 dB
Large Signal Voltage Gain A
VO
R
R
Long-Term Offset Voltage
Offset Voltage Drift
Bias Current Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
1
2
V
OS
∆VOS/∆T
∆I
/∆T
B
OH
I
Output Voltage Swing Low V
OL
I
Short-Circuit Current I
Maximum Output Current I
POWER SUPPLY
SC
OUT
Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V 120 dB
–40°C ≤ TA ≤ +125°C 90 dB
Supply Current/Amplifier I
SY
–40°C ≤ TA ≤ +125°C 1 mA
OP262, OP462, V
–40°C ≤ TA ≤ +125°C 850 µA
DYNAMIC PERFORMANCE
Slew Rate SR 1 V < V
Settling Time t
S
Gain Bandwidth Product GBP 15 MHz
Phase Margin φ
NOISE PERFORMANCE
m
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 µV p-p
Voltage Noise Density e
Current Noise Density i
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the −40°C to +25°C delta and the +25°C to +125°C delta.
n
n
OP162G, OP262G, OP462G 45 325 µV
360 600 nA
±2.5 ±25 nA
0 4 V
RL = 2 kΩ, 0.5 ≤ V
= 10 kΩ, 0.5 ≤ V
L
= 10 kΩ, –40°C ≤ TA ≤ +125°C 40 V/mV
L
≤ 4.5 V 30 V/mV
OUT
≤ 4.5 V 65 88 V/mV
OUT
G grade 600 µV
1 µV/°C
250 pA/°C
IL = 250 µA, –40°C ≤ TA ≤ +125°C 4.95 4.99 V
= 5 mA 4.85 4.94 V
L
IL = 250 µA, –40°C ≤TA ≤ +125°C 14 50 mV
= 5 mA 65 150 mV
L
Short to ground ±80 mA
±30 mA
OP162, V
= 2.5 V 600 750 µA
OUT
= 2.5 V 500 700 µA
OUT
< 4 V, RL = 10 kΩ 10 V/µs
OUT
To 0.1%, AV = –1, VO = 2 V step 540 ns
61 Degrees
f = 1 kHz 9.5
f = 1 kHz 0.4
nV/√
pA/√
Hz
Hz
Rev. F | Page 3 of 20
OP162/OP262/OP462
@ VS = 3.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
G, H grades, –40°C ≤ TA ≤ +125°C 1 mV
D grade 0.8 3 mV
–40°C ≤ TA ≤ +125°C 5 mV
Input Bias Current I
Input Offset Current I
Input Voltage Range V
Common-Mode Rejection CMRR 0 V ≤ VCM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C 70 110 dB
Large Signal Voltage Gain A
R
Long-Term Offset Voltage
1
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
I
Output Voltage Swing Low V
I
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V, –40°C ≤ TA ≤ +125°C 60 110 dB
Supply Current/Amplifier I
–40°C ≤ TA ≤ +125°C 1 mA
OP262, OP462, V
–40°C ≤ TA ≤ +125°C 850 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 10 V/µs
Settling Time t
Gain Bandwidth Product GBP 15 MHz
Phase Margin φ
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 µV p-p
Voltage Noise Density e
Current Noise Density i
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
OS
B
OS
CM
VO
V
OS
OH
OL
SY
S
m
n
n
OP162G, OP262G, OP462G 50 325 µV
360 600 nA
±2.5 ±25 nA
0 2 V
RL = 2 kΩ, 0.5 V ≤ V
= 10 kΩ, 0.5 V ≤ V
L
G grade 600 µV
IL = 250 µA 2.95 2.99 V
= 5 mA 2.85 2.93 V
L
IL = 250 µA 14 50 mV
= 5 mA 66 150 mV
L
OP162, V
= 1.5 V 600 700 µA
OUT
To 0.1%, AV = –1, VO = 2 V step 575 ns
59 Degrees
f = 1 kHz 9.5
f = 1 kHz 0.4
≤ 2.5 V 20 V/mV
OUT
≤ 2.5 V 20 30 V/mV
OUT
= 1.5 V 500 650 µA
OUT
nV/√
pA/√
Hz
Hz
Rev. F | Page 4 of 20
OP162/OP262/OP462
@ VS = ±5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 3. Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
H grade, –40°C ≤ TA ≤ +125°C 1 mV
D grade 0.8 3 mV
Input Bias Current I
B
Input Offset Current I
OS
Input Voltage Range V
CM
Common-Mode Rejection CMRR
Large Signal Voltage Gain A
VO
R
Long-Term Offset Voltage1 V
Offset Voltage Drift2
Bias Current Drift
∆V
∆I
OS
OS
/∆T
B
/∆T
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH IL = 250 µA, –40°C ≤ TA ≤ +125°C 4.95 4.99 V
I
Output Voltage Swing Low VOL IL = 250 µA, –40°C ≤ TA ≤ +125°C –4.99 –4.95 V
I
Short-Circuit Current ISC Short to ground ±80 mA
Maximum Output Current I
±30 mA
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±1.35 V to ±6 V,
Supply Current/Amplifier ISY OP162, V
OP262, OP462, V
Supply Voltage Range VS 3.0 (±1.5) 12 (±6) V
DYNAMIC PERFORMANCE
Slew Rate SR
Settling Time tS To 0.1%, AV = –1, VO = 2 V step 475 ns
Output Short-Circuit Duration Observe Derating Curves
Storage Temperature Range –65°C to +150°C
Operating Temperature Range –40°C to +125°C
Junction Temperature Range –65°C to +150°C
Lead Temperature Range
(Soldering, 10 sec) 300°C
1
For supply voltages greater than 6 V, the input voltage is limited to less than
or equal to the supply voltage.
2
For differential input voltages greater than 0.6 V, the input current should be
limited to less than 5 mA to prevent degradation or destruction of the input
devices.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operation section
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
θJA is specified for the worst-case conditions, that is, θJA is specified for a
device soldered in circuit board for SOIC, MSOP, and TSSOP packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. F | Page 6 of 20
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