Analog Devices MAT01 Datasheet
Matched Monolithic
a
FEATURES
Low V
Low TCV
High h
Excellent h
Low Noise Voltage: 0.23 V p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
Available in Die Form
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV, tem-
perature drift of 0.15 µV/°C, and h
high h
including an exceptional h
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
(VBE Match): 40 V typ, 100 V max
OS
: 0.5 V/ⴗC max
OS
: 500 min
FE
Linearity from 10 nA to 10 mA
FE
matching of 0.7%. Very
is provided over a six decade range of collector current,
FE
FE
FE
of 590 at a collector current of only
Dual Transistor
MAT01
PIN CONNECTION
TO-78
(H Suffix)
NOTE: Substrate is connected to case.
BURN-IN CIRCUIT
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700 World Wide Web Site: http://www.analog.com
Fax: 617/326-8703 © Analog Devices, Inc., 1997
MAT01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Min Typ Min Units
Breakdown Voltage BV
Offset Voltage V
CEO
OS
(@ VCB = 15 V, IC = 10 A, TA = 25ⴗC, unless otherwise noted.)
MAT01AH MAT01GH
I
= 100 µA45 45 V
C
0.04 0.1 0.10 0.5 mV
Offset Voltage Stability
First Month V
/Time (Note 1) 2.0 2.0 µV/Mo
OS
Long Term (Note 2) 0.2 0.2 µV/Mo
Offset Current I
Bias Current I
Current Gain h
Current Gain Match ∆h
Low Frequency Noise
Voltage e
OS
B
FE
FE
p-p 0.1 Hz to 10 Hz
n
IC = 10 nA 590 430
= 10 µA 500 770 250 560
I
C
I
= 10 mA 840 610
C
I
= 10 µA 0.7 3.0 1.0 8.0 %
C
100 nA ≤ I
C
≤ 10 mA 0.8 1.2 %
3
0.1 0.6 0.2 3.2 nA
13 20 18 40 nA
0.23 0.4 0.23 0.4 µV p-p
Broadband Noise
Voltage e
Noise Voltage
Density e
Offset Voltage Change ∆V
Offset Current Change ∆I
Collector-Base
Leakage Current I
Collector-Emitter
Leakage Current I
Collector-Collector
Leakage Current I
Collector Saturation V
Voltage I
Gain-Bandwidth Product f
Output Capacitance C
rms 1 Hz to 10 kHz 0.60 0.60 µV rms
n
n
OS/∆VCB
OS/∆VCB
CBO
CES
CC
CE(SAT)
T
OB
fO = 10 Hz
f
= 100 Hz
O
f
= 1000 Hz
O
0 ≤ VCB ≤ 30 V 0.5 3.0 0.8 8.0 µV/V
0 ≤ VCB ≤ 30 V 2 15 3 70 pA/V
VCB = 30 V, IE = 0
VCE = 30 V, VBE = 0
VCC = 30 V
IB = 0.1 mA, IC = 1 mA 0.12 0.20 0.12 0.25 V
= 1 mA, IC = 10 mA 0.8 0.8 V
B
VCE = 10 V, IC = 10 mA 450 450 MHz
VCB = 15 V, IE = 0 2.8 2.8 pF
3
3
3
4
4, 5
5
7.0 9.0 7.0 9.0 nV/√Hz
6.1 7.6 6.1 7.6 nV/√Hz
6.0 7.5 6.0 7.5 nV/√Hz
15 50 25 200 pA
50 200 90 400 pA
20 200 30 400 pA
Collector-Collector
Capacitance C
CC
V
= 0 8.5 8.5 pF
CC
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Min Typ Min Units
Offset Voltage V
OS
(@ VCB = 15 V, I
= 10 A, –55ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.)
C
MAT01AH MAT01GH
0.06 0.15 0.14 0.70 mV
Average Offset
Voltage Drift TCV
Offset Current I
OS
OS
(Note 6) 0.15 0.50 0.35 1.8 µV/°C
0.9 8.0 1.5 15.0 nA
Average Offset
Current Drift TCI
Bias Current Ι
Current Gain h
Collector-Base I
OS
Β
FE
CBO
Leakage Current I
Collector-Emitter I
CES
Leakage Current V
Collector-Collector I
CC
(Note 7) 10 90 15 150 pA/°C
28 60 36 130 nA
167 400 77 300
T
= 125°C, V
A
4
= 0
E
T
= 125°C, V
A
= 0
BE
T
= 125°C, V
A
4, 6
= 30 V,
CB
= 30 V,
CE
= 30 V,
CC
15 80 25 200 nA
50 300 90 400 nA
Leakage Current (Note 6) 30 200 50 400 nA
–2–
REV. A
MAT01
TYPICAL ELECTRICAL CHARACTERISTICS
(@ VCB = 15 V and IC = 10 A, TA = +25ⴗC, unless otherwise noted.)
MAT01N
Parameter Symbol Conditions Typical Units
Average Offset Voltage Drift TCV
Average Offset Current Drift TCI
OS
OS
0.35 µV/°C
15 pA/°C
Collector-Emitter-Leakage
Current I
CES
VCE = 30 V, VBE = 0 90 pA
Collector-Base-Leakage
Current I
Gain Bandwidth Product f
CBO
T
Offset Voltage Stability ∆V
/T First Month (Note 1) 2.0 µV/Mo
OS
VCB = 30 V, IE = 0 25 pA
VCE = 10 V, IC = 10 mA 450 MHz
Long-Term (Note 2) 0.2 µV/Mo
NOTES
1
Exclude first hour of operation to allow for stabilization.
2
Parameter describes long-term average drift after first month of operation.
3
Sample tested.
4
The collector-base (I
reduced by a factor of two to ten times by connecting the substrate (package) to
a potential which is lower than either collector voltage.
5
ICC and I
6
Guaranteed by VOS test (TCV
7
Guaranteed by IOS test limits over temperature.
Specifications subject to change without notice.
are guaranteed by measurement of I
CES
) and collector-emitter (I
CBO
V
OS
≅
OS
for V
T
) leakage currents may be
CES
.
CBO
Ⰶ VBE) T = 298°K for T
OS
= 25°C.
A
WAFER TEST LIMITS
(@ VCB = 15 V, IC = 10 A, TA = +25ⴗC, unless otherwise noted.)
MAT01N
Parameter Symbol Conditions Limits Units
Breakdown Voltage BV
Offset Voltage V
Offset Current I
Bias Current I
Current Gain h
Current Gain Match ∆h
Offset Voltage Change ∆V
Offset Current Change ∆V
Collector Saturation Voltage V
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
CEO
OS
OS
B
FE
FE
/∆V
OS
/∆V
OS
CE (SAT)
CB
CB
I
= 100 µA45 V min
C
0.5 mV max
3.2 nA max
40 nA max
250 min
8.0 % max
0 ≤ VCB ≤ 30 V 8.0 µV/V max
0 ≤ VCB ≤ 30 V 70 pA/V max
IB = 0.1 mA, IC = 1 mA 0.25 V max
REV. A
–3–
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