2.7 V to 5.5 V single-supply operation
±2.5 V to ±2.75 V dual-supply operation for ac or bipolar
operations
SPI-compatible interface
Wiper setting and memory readback
Power on refreshed from memory
Resistor tolerance stored in memory
Thin LFCSP 10-lead, 3 mm × 3 mm× 0.8 mm package
Compact MSOP, 10-lead, 3 mm × 4.9 mm × 1.1 mm package
APPLICATIONS
Mechanical rheostat replacements
Op-amp: variable gain control
Instrumentation: gain, offset adjustment
Programmable voltage-to-current conversions
Programmable filters, delays, time constants
Programmable power supply
Sensor calibration
with SPI Interface and 50-TP Memory
AD5174
FUNCTIONAL BLOCK DIAGRAM
DD
POWER-ON
SCLK
SYNC
DIN
SDO
RESET
SPI
SERIAL
INTERFACE
V
SS
REGISTER
10
50-TP
MEMORY
BLOCK
EXT_CAPGND
Figure 1.
AD5174
RDAC
A
W
08718-001
GENERAL DESCRIPTION
The AD5174 is a single-channel, 1024-position digital rheostat
that combines industry leading variable resistor performance
with nonvolatile memory (NVM) in a compact package.
This device supports both dual-supply operation at ±2.5 V to
±2.75 V and single-supply operation at 2.7 V to 5.5 V and offers
50-times programmable (50-TP) memory.
The AD5174 device wiper settings are controllable through the
SPI digital interface. Unlimited adjustments are allowed before
programming the resistance value into the 50-TP memory. The
AD5174 does not require any external voltage supply to facilitate fuse blow and there are 50 opportunities for permanent
programming. During 50-TP activation, a permanent blow fuse
command freezes the resistance position (analogous to placing
epoxy on a mechanical rheostat).
The AD5174 is available in a 3 mm × 3mm 10-lead LFCSP
package and in a 10-lead MSOP package. The part is guaranteed
to operate over the extended industrial temperature range of
−40°C to +125°C.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Ordering Guide.......................................................... 18
3/10—Revision 0: Initial Version
Rev. B | Page 2 of 20
AD5174
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V to 2.75 V, VSS = −2.5 V to −2.75 V; −40°C < TA < 125°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution 10 Bits
Resistor Integral Nonlinearity
|VDD − VSS| = 3.3 V to 3.6 V −1 +1.5 LSB
|VDD − VSS| = 2.7 V to 3.3 V −2.5 +2.5 LSB
Resistor Differential Nonlinearity2 R-DNL
Nominal Resistor Tolerance ±15 %
Resistance Temperature Coefficient
Wiper Resistance Code = zero scale 35 70 Ω
RESISTOR TERMINALS
Terminal Voltage Range
Capacitance A4 f = 1 MHz, measured to GND, code = half scale 90 pF
Capacitance W4 f = 1 MHz, measured to GND, code = half scale 40 pF
Common-Mode Leakage Current4 V
DIGITAL INPUTS
Input Logic4
High V
Low V
Input Current IIN ±1 μA
Input Capacitance4 C
DIGITAL OUTPUT
Output Voltage4
High VOH R
Low VOL R
V
V
Tristate Leakage Current −1 +1 μA
Output Capacitance4 5 pF
POWER SUPPLIES
Single-Supply Power Range VSS = 0 V 2.7 5.5 V
Dual-Supply Power Range ±2.5 ±2.75 V
Supply Current
Positive IDD 1 μA
Negative ISS −1 μA
50-TP Store Current
Positive I
Negative I
50-TP Read Current
4, 8
Positive I
Negative I
Power Dissipation9 P
Power Supply Rejection Ratio4 PSRR ΔVDD/ΔVSS = ±5 V ± 10% −50 −55 dB
2, 3
R-INL |VDD − VSS| = 3.6 V to 5.5 V −1 +1 LSB
4, 5
Code = full scale 35 ppm/°C
4, 6
V
4, 7
V
TERM
= VW 50 nA
A
2.0 V
INH
0.8 V
INL
5 pF
IN
= 2.2 kΩ to VDD V
PULL_UP
= 2.2 kΩ to VDD
PULL_UP
= 2.7 V to 5.5 V, VSS = 0 V 0.4 V
DD
= 2.5 V to 2.75 V, VSS = −2.5 V to −2.75 V 0.6 V
DD
DD_OTP_STORE
SS_OTP_STORE
4 mA
−4 mA
−1 +1 LSB
V
SS
− 0.1 V
DD
V
DD
DD_OTP_READ
SS_OTP_READ
DISS
500 μA
−500 μA
VIH = VDD or VIL = GND 5.5 μW
Rev. B | Page 3 of 20
AD5174
Parameter Symbol Test Conditions/Comments Min Typ1 Max Unit
DYNAMIC CHARACTERISTICS
Bandwidth −3 dB, RAW = 5 kΩ, Terminal W, see Figure 24 700 kHz
Total Harmonic Distortion VA = 1 V rms, f = 1 kHz, RAW = 5 kΩ −90 dB
Resistor Noise Density RWB = 5 kΩ, TA = 25°C, f = 10 kHz 13 nV/√Hz
1
Typical specifications represent average readings at 25°C, VDD = 5 V, and VSS = 0 V.
2
Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from the ideal between successive tap positions.
3
The maximum current in each code is defined by IAW = (VDD − 1)/RAW.
4
Guaranteed by design and not subject to production test.
5
See Figure 9 for more details.
6
Resistor Terminal A and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground referenced bipolar
signal adjustment.
7
Different from operating current; the supply current for the fuse program lasts approximately 55 ms.
8
Different from operating current; the supply current for the fuse read lasts approximately 500 ns.
9
P
is calculated from (IDD × VDD) + (ISS × VSS).
DISS
10
All dynamic characteristics use VDD = +2.5 V, VSS = −2.5 V.
INTERFACE TIMING SPECIFICATIONS
VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V, VSS = −2.5 V; all specifications T
Table 2.
Parameter Limit1 Unit Test Conditions/Comments
2
t
20 ns min SCLK cycle time
1
t2 10 ns min SCLK high time
t3 10 ns min SCLK low time
t4 15 ns min
t5 5 ns min Data setup time
t6 5 ns min Data hold time
t7 1 ns min
3
t
400 ns min
8
t9 15 ns min
4
t
450 ns max SCLK rising edge to SDO valid
10
t
MEMORY_READ
t
MEMORY_PROGRAM
t
RESET
t
POWER-UP
1
All input signals are specified with tr = tf = 1 ns/V (10% to 90% of VDD) and timed from a voltage level of (VIL + VIH)/2.
2
Maximum SCLK frequency is 50 MHz.
3
Refer to t
4
R
PULL_UP
5
Maximum time after VDD − VSS is equal to 2.5 V.
6 μs max Memory readback execute time
350 ms max Memory program time
600 μs max Reset OTP restore time
5
2 ms max Power-on 50-TP restore time
and
MEMORY_READ
= 2.2 kΩ to VDD with a capacitance load of 168 pF.
t
MEMORY_PROGRAM
4, 10
to SCLK falling edge setup time
SYNC
SCLK falling edge to SYNC
Minimum SYNC
rising edge to next SCLK fall ignored
SYNC
for memory commands operations.
MIN
high time
to T
rising edge
, unless otherwise noted.
MAX
Rev. B | Page 4 of 20
AD5174
Shift Register and Timing Diagrams
DB9 (MSB)DB0 (LSB)
C0C1
D9
D7D6D5D4D3
D8
DATA BITS
Figure 2. Shift Register Content
t
5
D2D1
t
6
D0
08718-002
t
7
t
9
SCLK
SYNC
DIN
C3
00
t
4
t
8
t
2
t
3
00C3C2D7D6D5D2D1D0
C2
CONTROL BITS
t
1
SDO
SCLK
SYNC
DIN
SDO
Figure 3. Write Timing Diagram, CPOL=0, CPHA = 1
0000C3C3
XXC3D1D0
Figure 4. Read Timing Diagram, CPOL=0, CPHA = 1
08718-003
t
9
D1D0D0D0
t
10
08718-004
Rev. B | Page 5 of 20
AD5174
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND –0.3 V to +7.0 V
VSS to GND +0.3 V to −7.0 V
VDD to VSS 7 V
VA, VW to GND VSS − 0.3 V, VDD + 0.3 V
Digital Input and Output Voltage to GND −0.3 V to VDD + 0.3 V
EXT_CAP to VSS 7 V
IA, IW
Pulsed1
Frequency > 10 kHz ±6 mA/d2
Frequency ≤ 10 kHz ±6 mA/√d2
Continuous ±6 mA
Operating Temperature Range3 −40°C to +125°C
Maximum Junction Temperature
(T
Maximum)
J
150°C
Storage Temperature Range −65°C to +150°C
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 20 sec to 40 sec
Package Power Dissipation (TJ max − TA)/θJA
1
Maximum terminal current is bounded by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A and W terminals at a given
resistance.
2
Pulse duty factor.
3
Includes programming of 50-TP memory.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is defined by JEDEC specification JESD-51 and the value is
dependent on the test board and test environment.
Table 4. Thermal Resistance
Package Type θ
10-Lead LFCSP 50 3 °C/W
10-Lead MSOP 135 N/A °C/W
1
JEDEC 2S2P test board, still air (0 m/sec airflow).
ESD CAUTION
1
θJC Unit
JA
Rev. B | Page 6 of 20
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