ANALOG DEVICES AD5174 Service Manual

Single-Channel, 1024-Position, Digital Rheostat
V

FEATURES

Single-channel, 1024-position resolution 10 kΩ nominal resistance 50-times programmable (50-TP) wiper memory Rheostat mode temperature coefficient: 35 ppm/°C
2.7 V to 5.5 V single-supply operation ±2.5 V to ±2.75 V dual-supply operation for ac or bipolar
operations SPI-compatible interface Wiper setting and memory readback Power on refreshed from memory Resistor tolerance stored in memory Thin LFCSP 10-lead, 3 mm × 3 mm× 0.8 mm package Compact MSOP, 10-lead, 3 mm × 4.9 mm × 1.1 mm package

APPLICATIONS

Mechanical rheostat replacements Op-amp: variable gain control Instrumentation: gain, offset adjustment Programmable voltage-to-current conversions Programmable filters, delays, time constants Programmable power supply Sensor calibration
with SPI Interface and 50-TP Memory
AD5174

FUNCTIONAL BLOCK DIAGRAM

DD
POWER-ON
SCLK
SYNC
DIN
SDO
RESET
SPI
SERIAL
INTERFACE
V
SS
REGISTER
10
50-TP
MEMORY
BLOCK
EXT_CAP GND
Figure 1.
AD5174
RDAC
A
W
08718-001

GENERAL DESCRIPTION

The AD5174 is a single-channel, 1024-position digital rheostat that combines industry leading variable resistor performance with nonvolatile memory (NVM) in a compact package.
This device supports both dual-supply operation at ±2.5 V to ±2.75 V and single-supply operation at 2.7 V to 5.5 V and offers 50-times programmable (50-TP) memory.
The AD5174 device wiper settings are controllable through the SPI digital interface. Unlimited adjustments are allowed before programming the resistance value into the 50-TP memory. The AD5174 does not require any external voltage supply to facili­tate fuse blow and there are 50 opportunities for permanent programming. During 50-TP activation, a permanent blow fuse command freezes the resistance position (analogous to placing epoxy on a mechanical rheostat).
The AD5174 is available in a 3 mm × 3mm 10-lead LFCSP package and in a 10-lead MSOP package. The part is guaranteed to operate over the extended industrial temperature range of
−40°C to +125°C.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
AD5174

TABLE OF CONTENTS

Features.............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics ............................................................. 3
Interface Timing Specifications.................................................. 4
Absolute Maximum Ratings............................................................ 6
Thermal Resistance ...................................................................... 6
ESD Caution.................................................................................. 6
Pin Configuration and Function Descriptions............................. 7
Typical Performance Characteristics ............................................. 8
Test Circuits..................................................................................... 11
Theory of Operation ...................................................................... 12
Serial Data Interface................................................................... 12
Shift Register............................................................................... 12
RDAC Register............................................................................ 12
50-TP Memory Block ................................................................ 12
Write Protection ......................................................................... 12
RDAC and 50-TP Read Operation .......................................... 13
Shutdown Mode ......................................................................... 14
Reset ............................................................................................. 14
SDO Pin and Daisy-Chain Operation..................................... 15
RDAC Architecture.................................................................... 16
Programming the Variable Resistor......................................... 16
EXT_CAP Capacitor.................................................................. 17
Terminal Voltage Operating Range ......................................... 17
Power-Up Sequence ................................................................... 17
Outline Dimensions....................................................................... 18
Ordering Guide .......................................................................... 18

REVISION HISTORY

12/10—Rev. A to Rev. B
Changes to SDO Pin Description................................................... 7
Changes to SDO Pin and Daisy-Chain Operation Section....... 15
7/10—Rev. 0 to Rev. A
Changes to Daisy-Chain Operation Section including Changing
Title to SDO Pin and Daisy-Chain Operation Section ............. 15
Added Table 11 ...............................................................................15
Changes to Ordering Guide.......................................................... 18
3/10—Revision 0: Initial Version
Rev. B | Page 2 of 20
AD5174

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V to 2.75 V, VSS = −2.5 V to −2.75 V; −40°C < TA < 125°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution 10 Bits
Resistor Integral Nonlinearity
|VDD − VSS| = 3.3 V to 3.6 V −1 +1.5 LSB
|VDD − VSS| = 2.7 V to 3.3 V −2.5 +2.5 LSB Resistor Differential Nonlinearity2 R-DNL Nominal Resistor Tolerance ±15 % Resistance Temperature Coefficient Wiper Resistance Code = zero scale 35 70 Ω
RESISTOR TERMINALS
Terminal Voltage Range Capacitance A4 f = 1 MHz, measured to GND, code = half scale 90 pF Capacitance W4 f = 1 MHz, measured to GND, code = half scale 40 pF Common-Mode Leakage Current4 V
DIGITAL INPUTS
Input Logic4
High V
Low V Input Current IIN ±1 μA Input Capacitance4 C
DIGITAL OUTPUT
Output Voltage4
High VOH R
Low VOL R V V Tristate Leakage Current −1 +1 μA Output Capacitance4 5 pF
POWER SUPPLIES
Single-Supply Power Range VSS = 0 V 2.7 5.5 V Dual-Supply Power Range ±2.5 ±2.75 V Supply Current
Positive IDD 1 μA
Negative ISS −1 μA 50-TP Store Current
Positive I
Negative I 50-TP Read Current
4, 8
Positive I
Negative I Power Dissipation9 P Power Supply Rejection Ratio4 PSRR ΔVDD/ΔVSS = ±5 V ± 10% −50 −55 dB
2, 3
R-INL |VDD − VSS| = 3.6 V to 5.5 V −1 +1 LSB
4, 5
Code = full scale 35 ppm/°C
4, 6
V
4, 7
V
TERM
= VW 50 nA
A
2.0 V
INH
0.8 V
INL
5 pF
IN
= 2.2 kΩ to VDD V
PULL_UP
= 2.2 kΩ to VDD
PULL_UP
= 2.7 V to 5.5 V, VSS = 0 V 0.4 V
DD
= 2.5 V to 2.75 V, VSS = −2.5 V to −2.75 V 0.6 V
DD
DD_OTP_STORE
SS_OTP_STORE
4 mA
−4 mA
−1 +1 LSB
V
SS
− 0.1 V
DD
V
DD
DD_OTP_READ
SS_OTP_READ
DISS
500 μA
−500 μA
VIH = VDD or VIL = GND 5.5 μW
Rev. B | Page 3 of 20
AD5174
Parameter Symbol Test Conditions/Comments Min Typ1 Max Unit
DYNAMIC CHARACTERISTICS
Bandwidth −3 dB, RAW = 5 kΩ, Terminal W, see Figure 24 700 kHz Total Harmonic Distortion VA = 1 V rms, f = 1 kHz, RAW = 5 kΩ −90 dB Resistor Noise Density RWB = 5 kΩ, TA = 25°C, f = 10 kHz 13 nV/√Hz
1
Typical specifications represent average readings at 25°C, VDD = 5 V, and VSS = 0 V.
2
Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from the ideal between successive tap positions.
3
The maximum current in each code is defined by IAW = (VDD − 1)/RAW.
4
Guaranteed by design and not subject to production test.
5
See Figure 9 for more details.
6
Resistor Terminal A and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground referenced bipolar
signal adjustment.
7
Different from operating current; the supply current for the fuse program lasts approximately 55 ms.
8
Different from operating current; the supply current for the fuse read lasts approximately 500 ns.
9
P
is calculated from (IDD × VDD) + (ISS × VSS).
DISS
10
All dynamic characteristics use VDD = +2.5 V, VSS = −2.5 V.

INTERFACE TIMING SPECIFICATIONS

VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V, VSS = −2.5 V; all specifications T
Table 2.
Parameter Limit1 Unit Test Conditions/Comments
2
t
20 ns min SCLK cycle time
1
t2 10 ns min SCLK high time t3 10 ns min SCLK low time t4 15 ns min
t5 5 ns min Data setup time t6 5 ns min Data hold time t7 1 ns min
3
t
400 ns min
8
t9 15 ns min
4
t
450 ns max SCLK rising edge to SDO valid
10
t
MEMORY_READ
t
MEMORY_PROGRAM
t
RESET
t
POWER-UP
1
All input signals are specified with tr = tf = 1 ns/V (10% to 90% of VDD) and timed from a voltage level of (VIL + VIH)/2.
2
Maximum SCLK frequency is 50 MHz.
3
Refer to t
4
R
PULL_UP
5
Maximum time after VDD − VSS is equal to 2.5 V.
6 μs max Memory readback execute time
350 ms max Memory program time
600 μs max Reset OTP restore time
5
2 ms max Power-on 50-TP restore time
and
MEMORY_READ
= 2.2 kΩ to VDD with a capacitance load of 168 pF.
t
MEMORY_PROGRAM
4, 10
to SCLK falling edge setup time
SYNC
SCLK falling edge to SYNC Minimum SYNC
rising edge to next SCLK fall ignored
SYNC
for memory commands operations.
MIN
high time
to T
rising edge
, unless otherwise noted.
MAX
Rev. B | Page 4 of 20
AD5174

Shift Register and Timing Diagrams

DB9 (MSB) DB0 (LSB)
C0C1
D9
D7 D6 D5 D4 D3
D8
DATA BITS
Figure 2. Shift Register Content
t
5
D2 D1
t
6
D0
08718-002
t
7
t
9
SCLK
SYNC
DIN
C3
00
t
4
t
8
t
2
t
3
0 0 C3 C2 D7 D6 D5 D2 D1 D0
C2
CONTROL BITS
t
1
SDO
SCLK
SYNC
DIN
SDO
Figure 3. Write Timing Diagram, CPOL=0, CPHA = 1
00 00C3 C3
X X C3 D1 D0
Figure 4. Read Timing Diagram, CPOL=0, CPHA = 1
08718-003
t
9
D1 D0D0 D0
t
10
08718-004
Rev. B | Page 5 of 20
AD5174

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND –0.3 V to +7.0 V VSS to GND +0.3 V to −7.0 V VDD to VSS 7 V VA, VW to GND VSS − 0.3 V, VDD + 0.3 V Digital Input and Output Voltage to GND −0.3 V to VDD + 0.3 V EXT_CAP to VSS 7 V IA, IW
Pulsed1
Frequency > 10 kHz ±6 mA/d2 Frequency ≤ 10 kHz ±6 mA/√d2
Continuous ±6 mA Operating Temperature Range3 −40°C to +125°C Maximum Junction Temperature
(T
Maximum)
J
150°C
Storage Temperature Range −65°C to +150°C Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 20 sec to 40 sec Package Power Dissipation (TJ max − TA)/θJA
1
Maximum terminal current is bounded by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum applied voltage across any two of the A and W terminals at a given resistance.
2
Pulse duty factor.
3
Includes programming of 50-TP memory.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

θJA is defined by JEDEC specification JESD-51 and the value is dependent on the test board and test environment.
Table 4. Thermal Resistance
Package Type θ
10-Lead LFCSP 50 3 °C/W 10-Lead MSOP 135 N/A °C/W
1
JEDEC 2S2P test board, still air (0 m/sec airflow).

ESD CAUTION

1
θJC Unit
JA
Rev. B | Page 6 of 20
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