Zetex (Now Diodes) BCW65A, BCW65AR, BCW65B, BCW65BR, BCW65C Schematic [ru]
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS
BCW65A EA BCW65AR 4V
BCW65B EB BCW65BR 5V
BCW65C EC BCW65CR 6V
BCW66F EF BCW66FR 7P
BCW66G EG BCW66GR 5T
BCW66H EH BCW66HR 7M
BCW65
BCW66
C
E
B
COMPLEMENTARY TYPES
BCW65 BCW67
BCW66 BCW68
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW65 BCW66 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Collector Current(10ms) I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
60 75 V
32 45 V
5V
800 mA
1000 mA
100 mA
330 mW
-55 to +150 °C
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65
BCW66
BCW65
BCW66
Emitter-Base Breakdown Voltage V
Collector-Emitter
BCW65
Cut-off Current
V
V
I
CES
32
(BR)CEO
45
60
(BR)CES
75
5V
(BR)EBO
BCW66
Emitter-Base Cut-Off Current I
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
Static
Forward
BCW65A
BCW66F
Current
Transfer
BCW65B
BCW66G
EBO
CE(sat)
BE(SAT)
h
FE
h
FE
35
75
100
35
50
110
160
160 250
250 400
60
BCW65C
BCW66H
h
80
FE
180
250
350 630
100
Transition Frequency f
Collector-Base Capacitance C
Emitter-Base Capacitance C
T
100 MHz IC =20mA, VCE =10V
cbo
ebo
8 12pFV
Noise Figure N 2 10 dB I
VI
V
nA
20
20
µA
20
nA
20
µA
20 nA V
0.3
0.7VV
=10mA
CEO
I
=10mA
CEO
=10µA
I
C
=10µA
I
C
=10µA
I
EBO
V
= 32V
CES
V
= 32V ,T
CES
= 45V
V
CES
V
= 45V ,T
CES
=4V
EBO
IC=100mA, IB = 10mA
= 500mA, IB =50mA*
I
C
2 V IC=500mA, IB=50mA*
=100µA, V
I
C
I
= 10mA, VCE = 1V
C
=100mA, VCE = 1V*
I
C
I
=500mA, VCE = 2V*
C
I
=100µA, V
C
I
= 10mA, VCE = 1V
C
=100mA, VCE = 1V*
I
C
I
=500mA, VCE = 2V*
C
I
=100µA, V
C
I
= 10mA, VCE = 1V
C
=100mA, VCE = 1V*
I
C
=500mA, VCE = 2V*
I
C
f = 100MHz
=10V, f =1MHz
CBO
80 pF V
=0.5V, f =1MHz
EBO
= 0.2mA, VCE = 5V
C
=1kΩ
R
G
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400nsns
IC=150mA
=- IB2 =15mA
I
B1
R
=150Ω
L
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
amb
amb
CE
CE
CE
=150oC
=150oC
=10V
=10V
=10V
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