Vishay SI2328DS Schematic [ru]

N-Channel 100 V (D-S) MOSFET

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2328DS (D8)*

*Marking Code

Ordering Information:

Si2328DS-T1-E3 (Lead (Pb)-free)
Si2328DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si2328DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

100 0.250 at V

DS(on)

GS

()I

D

(A)

= 10 V 1.5

• Halogen-free According to IEC 61249-2-21

Definition

•100 % R

• TrenchFET

and UIS Tested

g

®

Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

FEATURES

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (T

Pulsed Drain Current

Avalanche Current

b

b

= 150 °C)

J

a

Single Avalanche Energy E

Continuous Source Current (Diode Conduction)

Power Dissipation

a

a

TA = 25 °C

T

= 70 °C 1.2 0.92

A

L = 0.1 mH

TA = 25 °C

T

= 70 °C 0.80 0.47

A

Operating Junction and Storage Temperature Range T

DS

GS

I

D

I

DM

I

AS

AS

I

S

P

D

, T

J

stg

1.25 0.73

100

± 20

1.5 1.15

6

6

1.8 mJ

0.6 A

- 55 to 150 °C

V

A

W

Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.

Document Number: 71796
S11-2000-Rev. F, 10-Oct-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot Steady State R

a

t  5 s

R

thJA

thJF

80 100

°C/WSteady State 130 170

45 55

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This document is subject to change without notice.

1

Si2328DS

0

3

6

9

12

0246810

VGS = 10 V, 9 V, 8 V

6 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

5 V

4 V

7 V

3 V, 2 V, 1 V

Vishay Siliconix

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Limits

Parameter Symbol Test Conditions

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

a

a

Diode Forward Voltage V

Dynamic

b

GS(th)

GSS

DSS

I

D(on)

R

DS(on)

DS

g

SD

Total Gate Charge Qg

Gate-Drain Charge Q

Gate Resistance R

V

fs

gs

1.45

gd

g

VGS = 0 V, ID = 1 mA 100

V

= VGS, ID = 250 µA 2 4

DS

VDS = 0 V, VGS = ± 20 V ± 100 nA

V

V

DS

= 100 V, V

DS

= 100 V, V

GS

15 V, V

DS

V

= 10 V, ID = 1.5 A 0.195 0.250 

GS

= 0 V 1

GS

= 0 V, TJ = 70 °C 75

= 10 V 6 A

GS

VDS = 15 V, ID = 1.5 A 4 S

IS = 1 A, V

= 0 V 0.8 1.2 V

GS

3.3 5

V

DS

= 50 V, V

= 10 V, ID = 1.5 A

GS

0.47

0.5 1.3 2.4 

Switching

Tur n -O n De l a y T i m e t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

d(on)

V

r

915

d(off)

f

rr

I

D

= 50 V, RL = 33 

DD

 0.2 A, V

= 10 V, Rg = 6 

GEN

IF = 1.5 A, dI/dt = 100 A/µs 50 100

711

11 17

10 15

Notes:
a. Pulse test: PW  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Unit Min. Typ. Max.

V

µA

nCGate-Source Charge Q

ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Output Characteristics

12

9

6

- Drain Current (A)I

D

3

0

02468

This document is subject to change without notice.

TC = 125 °C

25 °C

- 55 °C

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

Document Number: 71796

S11-2000-Rev. F, 10-Oct-11

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

R

DS(on)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

036912

ID - Drain Current (A)

VGS = 10 V

- On-Resistance ()

0

50

100

150

200

250

0 20406080100

VDS - Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C - Capacitance (pF)

0.0

0.5

1.0

1.5

2.0

2.5

- 50 - 25 0 25 50 75 100 125 150

VGS = 10 V
I

D

= 1.5 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance (Normalized)

Si2328DS

Vishay Siliconix

On-Resistance vs. Drain Current

20

VDS = 50 V

= 1.5 A

I

D

16

12

8

- Gate-to-Source Voltage (V)

GS

4

V

0

0123456

Qg - Total Gate Charge (nC)

Gate Charge

10

1

TJ = 150 °C

Capacitance

On-Resistance vs. Junction Temperature

0.6

0.5

ID = 1.5 A

0.4

- Source Current (A)I

0.1

S

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

Document Number: 71796
S11-2000-Rev. F, 10-Oct-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TJ = 25 °C

This document is subject to change without notice.

0.3

- On-Resistance ()

0.2

DS(on)

R

0.1

0.0
0246810

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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3