Datasheet Si2323DS Datasheet (Vishay)

Si2323DS

C/W

PRODUCT SUMMARY

V

DS

(V)

-20

r

DS(on)

0.039 @ VGS = -4.5 V -4.7

0.052 @ VGS = -2.5 V - 4.1

0.068 @ VGS = -1.8 V - 3.5

New Product

P-Channel 20-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

I

(W)

(A)

D

APPLICATIONS

D Load Switch
D PA Switch

TO-236

(SOT-23)

G

1

D

3

S

2

Vishay Siliconix

Top View

Si2323DS (D3)*

*Marking Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a, b

a, b

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a, b

a, b

TA = 25_C
TA = 70_C

TA = 25_C
TA = 70_C

P

DM

I

DS
GS

I

D

S

D

stg

- 4.7

-3.8 -2.9

-1.0 -0.6

1.25 0.75

0.8 0.48

-20
8

-20

-55 to 150

THERMAL RESISTANCE RATINGS

V

-3.7

A

W

_C

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.

Document Number: 72024
S-22121—Rev. B, 25-Nov-02

a

t  5 sec 75 100

Steady State

R

thJA

thJF

120 166

40 50

_C/W

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Si2323DS

D

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage V

Dynamic

b

a

a

a

(BR)DSS

r

GS(th)

GSS

DSS

I

D(on)

DS(on)

g

fs

SD

VGS = 0 V, ID = -250 mA

VDS = VGS, ID = -250 mA

VDS = 0 V, VGS = 8 V 100 nA

VDS = -16 V, VGS = 0 V -1

VDS = -16 V, VGS = 0 V, TJ = 55_C

VDS  -5 V, VGS = -4.5 V -20 A

VGS = -4.5 V, ID = -4.7 A 0.031 0.039
VGS = -2.5 V, ID = -4.1 A 0.041 0.052
VGS = -1.8 V, ID = -2.0 A 0.054 0.068

VDS = -5 V, ID = -4.7 A 16 S

IS = -1.0 A, VGS = 0 V 0.7 -1.2 V

-20

-0.40

Limits

-1.0

-10

V

mA

W

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Switching

Turn-On Time

Turn-Off Time

Notes
a. Pulse test: PW 300 ms duty cycle 2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

c

t

d(on)

t

d(off)

iss

oss

rss

t

t

g

gs

gd

r

f

VDS = -10 V, VGS = -4.5 V

VDS = -10 V, VGS = 0, f = 1 MHz

VDD = -10 V, RL = 10 W

ID  -1.0 A, V

 -4.7 A

ID  -4.7 A

I

GEN

R

= 6 W

G

= -4.5 V

12.5 19

1.7

3.3

1020

191
140

25 40
43 65
71 110
48 75

nC

pF

ns

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Document Number: 72024

S-22121—Rev. B, 25-Nov-02

Si2323DS

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

20

16

12

8

- Drain Current (A)I

D

4

0

012345

0.15

Output Characteristics Transfer Characteristics

VGS = 5 thru 2.5 V

2 V

1.5 V

- Drain Current (A)I

D

1 V

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

20

TC = -55_C

16

12

8

4

0

0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)

Capacitance

1800

25_C

125_C

0.12

W )

0.09
VGS = 1.8 V

0.06

- On-Resistance (r

DS(on)

0.03

0.00

0 4 8 12 16 20

ID - Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

Gate Charge

5

VDS = 6 V

= 4.7 A

I

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

03691215

Qg - Total Gate Charge (nC)

1500

1200

900

600

C - Capacitance (pF)

300

C

rss

0

0 4 8 12 16 20

On-Resistance vs. Junction Temperature

1.5

1.4

W)

1.3

1.2

1.1

1.0

(Normalized)

- On-Resistance (r

0.9

DS(on)

0.8

0.7

0.6

VGS = 4.5 V
I

D

-50 -25 0 25 50 75 100 125 150

C

oss

- Drain-to-Source Voltage (V)

V

DS

= 4.7 A

T

- Junction T emperature (_C)

J

C

iss

Document Number: 72024
S-22121—Rev. B, 25-Nov-02

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Si2323DS

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

20
10

- Source Current (A)I

S

0.1

0.4

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

TJ = 150_C

TJ = 25_C

1

0.0 0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

1.0 1.2

Threshold Voltage

W )

- On-Resistance (r

DS(on)

0.15

0.12

0.09

ID = 2 A

0.06

0.03

0.00
012345

ID = 4.7 A

Single Pulse Power

12

0.3

0.2

0.1

Variance (V)V

GS(th)

0.0

-0.1

-0.2

-50 -25 0 25 50 75 100 125 150

ID = 140 mA

TJ - Temperature (_C)

- Drain Current (A)I

D

10

8

6

Power (W)

4

2

0

0.01

100

r

DS(on)

10

1

I

D(on)

Limited

0.1

0.01

0.1 1 10 100

Safe Operating Area

Limited

TA = 25_C

Single Pulse

BV

Limited

DSS

VDS - Drain-to-Source Voltage (V)

I

DM

Limited

P(t) = 0.0001

P(t) = 0.001
P(t) = 0.01

P(t) = 0.1
P(t) = 1

P(t) = 10
dc

1

Time (sec)

TA = 25_C

10 6000.1

100

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Document Number: 72024

S-22121—Rev. B, 25-Nov-02

Si2323DS

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-4

10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

-2

10

-1

Square Wave Pulse Duration (sec)

Vishay Siliconix

Notes:

P

DM

t

1

t

2

t

thJA

thJA

t

(t)

1
2

= 120_C/W

100

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

4. Surface Mounted

1 10 60010

Document Number: 72024
S-22121—Rev. B, 25-Nov-02

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Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1