Page 1
October 2001
Si3454DV
N-Channel PowerTrench
MOSFET
Si3454DV
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 4.2 A, 30 V. R
R
• High performance trench technology for extremely
low R
• Low gate charge (9.4 nC typical)
• High power and current handling capability
DS(ON)
= 65 mΩ @ VGS = 10 V
DS(ON)
= 95 mΩ @ VGS = 4.5 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 4.2 A
– Pulsed 20
Maximum Power Dissipation (Note 1a) 1.6 W PD
TJ, T
Operating and Storage Junction Temperature Range -55 to +150
STG
(Note 1b)
±20
0.8
V
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.454 Si3454DV 7’’ 8mm 3000 units
2001 Fairchild Sem iconductor Corporation
°C/W
°C/W
Si3454DV Rev A
Page 2
Si3454DV
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V 1
DSS
Breakdown Voltage Temperature
Coefficient
J
I
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
GSSF
I
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
GSSR
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
= 30 V, VGS = 0 V, TJ=70°C
V
DS
30 V
20
mV/°C
µA
25
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
On–State Drain Current VGS = 10 V, VDS = 5 V 15 A
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
= 10 V, ID = 4.2 A
V
GS
V
= 4.5 V, ID = 3.4 A
GS
gFS Forward Transconductance VDS = 10 V, ID = 4.2 A 10 S
1 1.5 2 V
– 4
33
44
65
95
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 460 pF
iss
C
Output Capacitance 115 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
45 pF
Switching Characteristics (Note 2)
V
= 15 V, ID = 1 A,
t
Turn–On Delay Time 5 20 nS
d(on)
tr Turn–On Rise Time 8 30 nS
t
Turn–Off Delay Time 17 35 nS
d(off)
tf Turn–Off Fall Time
trr
Source-Drain Reverse Recovery
Time
Qg Total Gate Charge 9.4 15 nC
Qgs Gate–Source Charge 1.2 nC
Qgd Gate–Drain Charge
DS
= 10 V, R
V
GS
GEN
= 6 Ω
IF = 1.7 A, di/dt = 100 A/uS
V
= 10 V, ID = 4.2 A,
DS
V
= 10 V
GS
13 20 nS
80 nS
1.1 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 1.7 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
θJA
pins. R
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
2
pad of 2oz copper on FR-4 board.
= 0 V, IS = 1.7 A (Note 2) 1.2 V
V
GS
is determined by the user's board design.
θCA
Si3454DV Rev A
Page 3
Typical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Si3454DV
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3454DV Rev A
Page 4
Typical Characteristics
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
Si3454DV
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si3454DV Rev A
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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