Datasheet Si2300DS Datasheet (Vishay)

New Product

N-Channel 30-V (D-S) MOSFET

Si2300DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.068 at V

30

0.085 at V

DS(on)

(Ω)

GS

= 4.5 V

= 2.5 V

I

D

3.6

3.4

(A)

(Typ.)

Q

g

a

3 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

• Compliant to RoHS Directive 2002/95/EC

®

Power MOSFET

Tested

g

APPLICATIONS

• DC/DC Converter for Portable Devices

TO-236

(SOT-23)

G

1

3

D

2

S

Top View

Si2300DS (P2)*

* Marking Code

Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

• Load Switch

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T

TA = 70 °C

Pulsed Drain Current

T

Continuous Source-Drain Diode Current

T

Maximum Power Dissipation

T

TA = 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

C

= 70 °C

C

= 25 °C

A

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

30

± 12

a

3.6

3.0

b, c

3.1

b, c

2.5

15

1.4

b, c

0.9

1.7

1.1

b, c

1.1

b, c

0.7

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 °C/W.

Document Number: 65701 S10-0111-Rev. A, 18-Jan-10

b, d

t ≤ 5 s R

thJA

R

thJF

90 115 60 75

°C/W

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New Product

Si2300DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

DS

V

= 4.5 V, ID = 2.9 A

GS

V

= 2.5 V, ID = 2.6 A

GS

V

DS

= 15 V, V

DS

= 15 V, V

V

DD

≅ 2.5 A, V

V

DD

≅ 2.5 A, V

IS = 2.5 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= 0 V, TJ = 55 °C

GS

≥ 5 V, V

GS

= ± 12 V

= 0 V

GS

= 10 V

0.6 1.5 V

10 A

21

- 3.2

± 100 nA

1

10

0.055 0.068

0.070 0.085

= 15 V, ID = 2.9 A

13 S

320

= 0 V, f = 1 MHz

GS

45

19

= 10 V, ID = 3.1 A

GS

6.5 10

34.5

= 4.5 V, ID = 3.1 A

GS

0.8

0.5

f = 1 MHz 0.6 3.2 6.4 Ω

10 15

= 15 V, RL = 6 Ω

= 4.5 V, Rg = 1 Ω

GEN

15 25

20 30

11 20

510

= 15 V, RL = 6 Ω

= 10 V, Rg = 1 Ω

GEN

12 20

15 25

10 15

TC = 25 °C

1.4

15

GS

= 0 V

0.8 1.2 V

11 20 ns

510nC

7

4

mV/°C

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65701

S10-0111-Rev. A, 18-Jan-10

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2300DS

Vishay Siliconix

15

VGS= 5 V thru 3 V

12

9

6

- Drain Current (A)

D

I

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.20

0.16

0.12

VGS= 2.5 V

- On-Resistance (Ω)

DS(on)

R

0.08

0.04

VGS= 2.5 V

VGS= 2 V

VGS= 4.5 V

5

4

TC= 125 °C

3

2

- DrainCurrent (A)I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5

TC= 25 °C

TC= - 55 °C

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

450

C

360

270

180

C - Capacitance (pF)

iss

C

oss

90

0.00 0 3 6 9 12 15

On-Resistance vs. Drain Current and Gate Voltage

10

ID= 3.1 A

8

6

VDS= 15 V

4

- Gate-to-Source Voltage (V) 2

GS

V

0

02468

Document Number: 65701 S10-0111-Rev. A, 18-Jan-10

ID- DrainCurrent(A)

VDS= 7.5 V

VDS= 24 V

Q

- Total Gate Charge (nC)

g

Gate Charge

C

0

0 5 10 15 20 25 30

1.7

1.6

1.5

1.4

1.3

1.2

- On-Resistance

(Normalized)

1.1

1.0

DS(on)

R

0.9

0.8

0.7

- 50 - 25 0 25 50 75 100 125 150

rss

VDS- Drain-to-SourceVoltage (V)

Capacitance

ID=2.9A

T

- Junction Temperature (°C)

J

VGS= 4.5 V

VGS= 2.5 V

On-Resistance vs. Junction Temperature

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New Product

Si2300DS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

1

- Source Current (A)

S

I

0.1

0.0 0.3 0.6 0.9 1.2 1.5

TJ= 150 °C

- Source-to-Drain Voltage (V)

V

SD

TJ= 25 °C

Source-Drain Diode Forward Voltage

(V)

GS(th)

V

1.4

1.3

1.2

1.1

1.0

0.9

0.

ID= 250 µA

8

- On-Resistance (Ω)

DS(on)

R

Power (W)

0.14

ID= 2.9 A

0.12

0.10

0.08

0.06

0.04

0.02

0.00 012345

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

25

20

15

10

5

0.7

- 50 - 25 0 25 50 75 100 125 150

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TJ- Temperature (°C)

Threshold Voltage

0

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

TA= 25 °C

Single Pulse

0.01

0.1 1 10 100

* V

- Drain-to-Source Voltage (V)

V

DS

>minimum VGSat which R

GS

DS(on)

*

BVDSS Limited

DS(on)

Safe Operating Area, Junction-to-Ambient

100 µs

1ms

10 ms

100 ms

1s

10 s, DC

is specified

10 10000.10.010.001 1001

Time (s)

Single Pulse Power

Document Number: 65701

S10-0111-Rev. A, 18-Jan-10

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2300DS

Vishay Siliconix

5

4

Package Limited

3

2

- Drain Current (A)

D

I

1

0

0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Current Derating*

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

2.0

1.5

1.0

Power (W)

0.5

0.0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power Derating

limit.

Document Number: 65701 S10-0111-Rev. A, 18-Jan-10

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New Product

Si2300DS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

0.1

Thermal Impedance

Normalized Effective Transient

0.01

10

1

0.1

Thermal Impedance

Normalized Effective Transient

0.1

0.05

0.02

Single Pulse

-4

Duty Cycle = 0.5

0.2

0.1

0.02

Single Pulse

10

0.05

-3

-2

10

-1

1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

JM-TA=PDMZthJA

4. Surface Mounted

10

t

1

t

2

t

1

t

2

=130 °C/W

thJA

(t)

100

100010

0.01

-4

10

-3

10

-2

10

-1

110

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65701

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Document Number: 65701

S10-0111-Rev. A, 18-Jan-10

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1