Page 1
PRODUCT SUMMARY
V
b
b
Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
VDS (V) r
-20
0.130 @ V
0.190 @ V
(W) ID (A)
DS(on)
= -4.5 V -2.3
GS
= -2.5 V -1.9
GS
TO-236
(SOT-23)
G
1
D
S
2
3
Top View
Si2301DS (A1)*
*Marking Code
Ordering Information: Si2301DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
a
_
b
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
b
c
DS
GS
I
D
I
DM
I
S
P
D
stg
R
thJA
-20
"8
-2.3
-1.5
-10
-1.6
1.25
0.8
-55 to 150 _C
100
166
_C/W
A
W
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
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1
Page 2
Si2301DS
ID ^ -2.8 A
ID ^ -1.0 A, V
=
V
T
Off Ti
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Limits
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage V
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
b
Switching
Turn-On Time
-
urn-
me
a
a
a
c
(BR)DSS
I
r
DS(on)
t
t
GS(th)
GSS
DSS
D(on)
g
fs
SD
g
gs
gd
iss
oss
rss
d(on)
t
r
d(off)
t
f
VGS = 0 V, ID = -250 mA -20
VDS = VGS, ID = -250 mA - 0.45
VDS = 0 V, VGS = "8 V "100 nA
VDS = -20 V, VGS = 0 V -1
VDS = -20 V, VGS = 0 V, TJ = 55_C -10
VDS v -5 V, VGS = -4.5 V -6
VDS v -5 V, VGS = -2.5 V -3
VGS = -4.5 V, ID = -2.8 A 0.105 0.130
VGS = -2.5 V, ID = -2.0 A 0.145 0.190
VDS = -5 V, ID = -2.8 A 6.5 S
IS = -1.6 A, VGS = 0 V -0.80 -1.2 V
5.8 10
VDS = -6 V, VGS = -4.5 V
I
^ -2.8 A
D
VDS = -6 V, VGS = 0, f = 1 MHz
VDD = -6 V, RL = 6 W
RG = 6 W
GEN
-
- 4.5
0.85
1.70
415
223
87
13.0 25
36.0 60
42 70
34 60
V
mA
A
W
nC
pF
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
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Document Number: 70627
S-31990—Rev. E, 13-Oct-03
Page 3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si2301DS
Vishay Siliconix
10
8
6
4
- Drain Current (A)I
D
2
0
012345
Output Characteristics Transfer Characteristics
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V
0, 0.5, 1 V
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.5
W )
0.4
- On-Resistance (r
DS(on)
0.3
0.2
0.1
VGS = 2.5 V
VGS = 4.5 V
1.5 V
2 V
10
8
6
4
- Drain Current (A)I
D
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
TC = -55_C
25_C
Capacitance
1000
800
600
C
iss
400
C - Capacitance (pF)
200
C
oss
C
rss
125_C
0.0
0246810
5
VDS = 6 V
I
= 2.8 A
D
4
3
2
- Gate-to-Source Voltage (V)
1
GS
V
0
02468
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
ID - Drain Current (A)
Gate Charge
Qg - Total Gate Charge (nC)
W )
(Normalized)
- On-Resistance (r
DS(on)
0
036912
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
1.8
VGS = 4.5 V
I
= 2.8 A
1.6
1.4
1.2
1.0
0.8
0.6
D
-50 0 50 100 150
- Junction Temperature (_C)
T
J
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Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C
- Source Current (A)I
S
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
Variance (V)V
GS(th)
0.4
0.3
0.2
0.1
0.0
TJ = 25_C
ID = 250 mA
0.6
0.5
W )
0.4
0.3
- On-Resistance (r
0.2
DS(on)
0.1
0.0
14
12
10
8
6
Power (W)
4
ID = 2.8 A
02468
TC = 25_C
Single Pulse
-0.1
-0.2
-50 0 50 100 150
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
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4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
-4
2
0
0.01 0.10 1.00 10.00
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
-3
10
-2
10
Square Wave Pulse Duration (sec)
-1
10
1
10
S-31990—Rev. E, 13-Oct-03
30
Document Number: 70627
Page 5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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