Vishay 50WQ06FNPBF Data Sheet

50WQ06FNPbF

Vishay High Power Products

Schottky Rectifier, 5.5 A

	Base
	cathode
		4, 2
D-PAK	1	3
	Anode	Anode

PRODUCT SUMMARY

IF(AV)	5.5 A
VR	60 V

FEATURES

• Popular D-PAK outline

• Small foot print, surface mountable

•Low forward voltage drop

•High frequency operation

•Guard ring for enhanced ruggedness and long term reliability

•Compliant to RoHS directive 2002/95/EC

•AEC-Q101 qualified

DESCRIPTION

The 50WQ06FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	VALUES	UNITS
IF(AV)	Rectangular waveform	5.5	A
VRRM		60	V
IFSM	tp = 5 µs sine	320	A
VF	5 Apk, TJ = 125 °C	0.54	V
TJ	Range	- 40 to 150	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	50WQ06FNPbF	UNITS
	Maximum DC reverse voltage	VR	60	V
	Maximum working peak reverse voltage	VRWM

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TC = 132 °C, rectangular waveform		5.5
	See fig. 5
						A
	Maximum peak one cycle		5 µs sine or 3 µs rect. pulse	Following any rated	320
	non-repetitive surge current	IFSM		load condition and with
			10 ms sine or 6 ms rect. pulse		105
	See fig. 7			rated VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1.2 A, L = 10 mH		7	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 µs		0.8	A
			Frequency limited by TJ maximum VA = 1.5 x VR typical

Document Number: 94234	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 08-Jul-09		1

50WQ06FNPbF

Vishay High Power Products Schottky Rectifier, 5.5 A

ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL	TEST CONDITIONS		VALUES	UNITS
			5 A	TJ = 25 °C	0.57
Maximum forward voltage drop		VFM (1)	10 A		0.74	V
See fig. 1			5 A	TJ = 125 °C	0.54
			10 A		0.68
Maximum reverse leakage current		IRM (1)	TJ = 25 °C	VR = Rated VR	3	mA
See fig. 2			TJ = 125 °C		35
Threshold voltage		VF(TO)	TJ = TJ maximum		0.35	V
Forward slope resistance		rt			25.5	mΩ
Typical junction capacitance		CT	VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C		360	pF
Typical series inductance		LS	Measured lead to lead 5 mm from package body		5.0	nH
Maximum voltage rate of change		dV/dt	Rated VR		10 000	V/µs
Note
(1) Pulse width < 300 µs, duty cycle < 2 %

	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER			SYMBOL		TEST CONDITIONS	VALUES	UNITS
	Maximum junction and storage			TJ	(1), TStg		- 40 to 150	°C
	temperature range
	Maximum thermal resistance,				RthJC	DC operation	3.0	°C/W
	junction to case					See fig. 4
	Approximate weight						0.3	g
							0.01	oz.
	Marking device					Case style D-PAK (similar to TO-252AA)	50WQ06FN
Note
(1)	dPtot	1	thermal runaway condition for a diode on its own heatsink
	------------- < --------------
	dTJ	RthJA

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94234
2		Revision: 08-Jul-09

50WQ06FNPbF

Schottky Rectifier, 5.5 A Vishay High Power Products

<![if ! IE]> <![endif]>Current(A)	100
								TJ = 150 °C				<![if ! IE]> <![endif]>(mA)
<![if ! IE]> <![endif]>Forward												<![if ! IE]> <![endif]>CurrentReverse
								TJ = 125 °C
								TJ = 25 °C
<![if ! IE]> <![endif]>Instantaneous	10
												<![if ! IE]> <![endif]>I
												<![if ! IE]> <![endif]>-
												<![if ! IE]> <![endif]>R
<![if ! IE]> <![endif]>-	1
<![if ! IE]> <![endif]>F	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2	2.4
<![if ! IE]> <![endif]>I

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

100
			TJ =			150 °C
10			TJ =			125 °C
1			TJ =			100 °C
					TJ = 75 °C
0.1
					TJ = 50 °C
0.01					TJ	= 25 °C
0.001
																	50
0			10				20						30		40				60

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

	1000
<![if ! IE]> <![endif]>(pF)
<![if ! IE]> <![endif]>- Junction Capacitance			TJ = 25 °C
	100
<![if ! IE]> <![endif]>T
<![if ! IE]> <![endif]>C
	10
	0	10	20	30	40	50	60	70

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance	1
					PDM
					t1
<![if ! IE]> <![endif]>- Thermal	0.1			D = 0.75	t2
		Single pulse		D = 0.50	Notes:
				D = 0.33
					1. Duty factor D = t1/t2
		(thermal resistance)
				D = 0.25
<![if ! IE]> <![endif]>thJC				D = 0.20	2. Peak TJ = PDM x ZthJC + TC
<![if ! IE]> <![endif]>Z	0.01
	0.00001	0.0001	0.001	0.01	0.1	1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94234	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 08-Jul-09		3