Vishay 50WQ04FNPBF Data Sheet

50WQ04FNPbF

Vishay High Power Products

Schottky Rectifier, 5.5 A

Base cathode

4, 2

D-PAK	1	3
	Anode	Anode

PRODUCT SUMMARY

IF(AV)	5.5 A
VR	40 V

FEATURES

• Popular D-PAK outline

• Small foot print, surface mountable

•Low forward voltage drop

•High frequency operation

•Guard ring for enhanced ruggedness and long term reliability

•Compliant to RoHS directive 2002/95/EC

•AEC-Q101 qualified

DESCRIPTION

The 50WQ04FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	VALUES	UNITS
IF(AV)	Rectangular waveform	5.5	A
VRRM		40	V
IFSM	tp = 5 µs sine	340	A
VF	5 Apk, TJ = 125 °C	0.44	V
TJ	Range	- 40 to 150	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	50WQ04FNPbF	UNITS
	Maximum DC reverse voltage	VR	40	V
	Maximum working peak reverse voltage	VRWM

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TC = 135 °C, rectangular waveform		5.5
	See fig. 5
						A
	Maximum peak one cycle		5 µs sine or 3 µs rect. pulse	Following any rated load	550
	non-repetitive surge current	IFSM		condition and with rated
			10 ms sine or 6 ms rect. pulse		90
	See fig. 7			VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1.5 A, L = 8 mH		9	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 µs		1.2	A
			Frequency limited by TJ maximum VA = 1.5 x VR typical

Document Number: 94233	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 08-Jul-09		1

50WQ04FNPbF

Vishay High Power Products				Schottky Rectifier, 5.5 A
	ELECTRICAL SPECIFICATIONS
	PARAMETER		SYMBOL			TEST CONDITIONS		VALUES	UNITS
						5 A	TJ = 25 °C	0.51
	Maximum forward voltage drop		VFM (1)			10 A		0.63	V
	See fig. 1					5 A	TJ = 125 °C	0.44
						10 A		0.59
	Maximum reverse leakage current		IRM (1)			TJ = 25 °C	VR = Rated VR	3	mA
	See fig. 2					TJ = 125 °C		40
	Thereshold voltage		VF(TO)			TJ =TJ maximum		0.27	V
	Forward slope resistance			rt				26.77	mΩ
	Typical junction capacitance			CT		VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C		405	pF
	Typical series inductance			LS		Measured lead to lead 5 mm from package body		5.0	nH
Note
(1)	Pulse width < 300 µs, duty cycle < 2 %
	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER		SYMBOL			TEST CONDITIONS		VALUES	UNITS
	Maximum junction and storage		T	(1), T	Stg			- 40 to 150	°C
	temperature range		J
	Maximum thermal resistance,			RthJC		DC operation		3.0	°C/W
	junction to case					See fig. 4
	Approximate weight							0.3	g
								0.01	oz.
	Marking device					Case style D-PAK (similar to TO-252AA)		50WQ04FN
Note
(1)	dPtot	1
	------------- < -------------- thermal runaway condition for a diode on its own heatsink
	dTJ	RthJA

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94233
2		Revision: 08-Jul-09

50WQ04FNPbF

Schottky Rectifier, 5.5 A Vishay High Power Products

	<![if ! IE]> <![endif]>Current(A)	100
	<![if ! IE]> <![endif]>Forward								TJ = 150 °C
		10							TJ = 125 °C
									TJ = 25 °C
	<![if ! IE]> <![endif]>- Instantaneous	1
	<![if ! IE]> <![endif]>F
		0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2
	<![if ! IE]> <![endif]>I

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

	100	TJ = 150 °C
<![if ! IE]> <![endif]>(mA)	10	TJ = 125 °C
		TJ = 100 °C
<![if ! IE]> <![endif]>Current
	1		TJ = 75 °C
<![if ! IE]> <![endif]>- Reverse	0.1		TJ = 50 °C
	0.01		TJ = 25 °C
<![if ! IE]> <![endif]>R
<![if ! IE]> <![endif]>I
	0.001
	0	5	10	15	20	25	30	35	40

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

1000
<![if ! IE]> <![endif]>Capacitance (pF)			TJ = 25 °C
<![if ! IE]> <![endif]>- Junction
<![if ! IE]> <![endif]>T
<![if ! IE]> <![endif]>C
100
0	5	10	15	20	25	30	35	40	45

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance	1				PDM
					t1
<![if ! IE]> <![endif]>Thermal			D = 0.75		t2
	0.1
			D = 0.50		Notes:
			D = 0.33
		Single pulse			1. Duty factor D = t1/t2
			D = 0.25
<![if ! IE]> <![endif]>-					2. Peak TJ = PDM x ZthJC + TC
<![if ! IE]> <![endif]>thJC		(thermal resistance)	D = 0.20
<![if ! IE]> <![endif]>Z	0.01
	0.00001	0.0001	0.001	0.01	0.1	1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94233	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 08-Jul-09		3