Vishay 50WQ04FNPBF Data Sheet

D-PAK
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 5.5 A
• Popular D-PAK outline
Anode
Base
cathode
1
5.5 A
40 V
4, 2
3
Anode
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
The 50WQ04FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
50WQ04FNPbF
Vishay High Power Products
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 5.5 A
40 V
tp = 5 µs sine 340 A
5 Apk, TJ = 125 °C 0.44 V
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 50WQ04FNPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 135 °C, rectangular waveform 5.5
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 90
TJ = 25 °C, IAS = 1.5 A, L = 8 mH 9 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
applied
RRM
550
1.2 A
A
Document Number: 94233 For technical questions, contact: diodestech@vishay.com Revision: 08-Jul-09 1
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50WQ04FNPbF
Vishay High Power Products
Schottky Rectifier, 5.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop See fig. 1
Maximum reverse leakage current See fig. 2
V
I
RM
Thereshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
FM
F(TO)
S
5 A
10 A 0.63
(1)
5 A
10 A 0.59
TJ = 25 °C
(1)
T
= 125 °C 40
J
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
TJ =TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 405 pF
T
Measured lead to lead 5 mm from package body 5.0 nH
0.51
0.44
3
0.27 V
26.77 mΩ
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Approximate weight
Marking device Case style D-PAK (similar to TO-252AA) 50WQ04FN
Note
dP
(1)
------------­dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------< R
thJA
(1)
T
, T
J
Stg
DC operation
R
thJC
See fig. 4
- 40 to 150 °C
3.0 °C/W
0.3 g
0.01 oz.
V
mA
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94233
2 Revision: 08-Jul-09
50WQ04FNPbF
100
TJ = 150 °C T
10
- Instantaneous Forward Current (A)
1
F
I
0
0.2 0.4 0.6 0.8 1.0
V
- Forward Voltage Drop (V)
FM
J
T
J
= 125 °C = 25 °C
Schottky Rectifier, 5.5 A
- Reverse Current (mA)
R
I
2.22.01.81.41.2 1.6
Vishay High Power Products
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
0.01
0.001
TJ = 50 °C
TJ = 25 °C
0
1051520
V
- Reverse Voltage (V)
R
25
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
4030 35
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
105152025 453503040
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
P
DM
t
1
t
2
1/t2
+ T
thJC
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
C
Document Number: 94233 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 08-Jul-09 3
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