Vishay 50WQ03FNPBF Data Sheet
PRODUCT SUMMARY
D-PAK
Anode
1
3
Base
cathode
Anode
4, 2
I
F(AV)
V
R
Schottky Rectifier, 5.5 A
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
The 50WQ03FNPbF surface mount Schottky rectifier has
5.5 A
30 V
been designed for applications requiring low forward drop
and small foot prints on PC board. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
50WQ03FNPbF
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 5.5 A
30 V
tp = 5 μs sine 320 A
5 Apk, TJ = 125 °C 0.35 V
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 50WQ03FNPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
I
F(AV)
FSM
AS
AR
50 % duty cycle at TC = 136 °C, rectangular waveform 5.5 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 130
TJ = 25 °C, IAS = 2 A, L = 5 mH 10 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
320
A
2.0 A
Document Number: 94232 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
50WQ03FNPbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 5.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
Maximum reverse leakage current
See fig. 2
V
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
FM
F(TO)
5 A
10 A 0.53
(1)
5 A
10 A 0.46
TJ = 25 °C
(1)
T
= 125 °C 58
J
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
TJ = TJ maximum
t
T
S
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 590 pF
Measured lead to lead 5 mm from package body 5.0 nH
0.46
0.35
3
0.19 V
22.22 m
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Approximate weight
Marking device Case style D-PAK (similar to TO-252AA) 50WQ03FN
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
R
thJC
DC operation
See fig. 4
- 40 to 150 °C
3.0 °C/W
0.3 g
0.01 oz.
V
mA
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94232
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 07-Jul-10
0.001
1.0
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
105152025
300
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105 152025
35
30
0
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
50WQ03FNPbF
100
10
TJ = 150 °C
T
J
T
J
1
- Instantaneous Forward Current (A)
F
I
0
0.2 0.4 0.6 0.8 1.0
V
- Forward Voltage Drop (V)
FM
Schottky Rectifier, 5.5 A
= 125 °C
= 25 °C
1.2 1.4 1.6 1.8
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94232 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Jul-10 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
thJC
Characteristics
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