Vishay 50MT060WHTAPbF Data Sheet
50MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A
FEATURES
• Generation 4 warp speed IGBT technology
®
antiparallel diodes with ultrasoft
MTP
•HEXFRED
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• UL approved file E78996
• Speed 60 kHz to 100 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
CES
typical at VGE = 15 V 2.3 V
V
CE(on)
at TC = 25 °C 114 A
I
C
600 V
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Peak switching current I
Diode continuous forward current I
Peak diode forward current I
Gate to emitter voltage V
RMS isolation voltage V
Maximum power dissipation P
CES
C
CM
LM
F
FM
GE
ISOL
D
TC = 25 °C 114
= 109 °C 50
T
C
TC = 109 °C 34
Any terminal to case, t = 1 minute 2500
TC = 25 °C 658
T
= 100 °C 263
C
600 V
350
350
200
± 20
A
V
W
Document Number: 94468 For technical questions, contact: indmodules@vishay.com
Revision: 01-Mar-10 1
www.vishay.com
50MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Warp Speed IGBT), 114 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Collector to emitter voltage V
Gate threshold voltage V
Collector to emitter leaking current I
Diode forward voltage drop V
Gate to emitter leakage current I
(BR)CESVGE
CE(on)
GE(th)IC
CES
FM
GES
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Total switching loss E
Turn-on switching loss E
Total switching loss E
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
g
ge
gc
on
off
ts
on
off
ts
ies
oes
res
rr
rr
rr
rr
rr
rr
= 0 V, IC = 500 μA 600 - - V
VGE = 15 V, IC = 50 A - 2.3 3.15
= 15 V, IC = 100 A - 2.5 3.2
V
GE
= 15 V, IC = 50 A, TJ = 150 °C - 1.72 2.17
V
GE
= 0.5 mA 3 - 6
VGE = 0 V, IC = 600 A - - 0.4
V
= 0 V, IC = 600 A, TJ = 150 °C - - 10
GE
IF = 50 A, VGE = 0 V - 1.58 1.80
= 50 A, VGE = 0 V, TJ = 150 °C - 1.49 1.68
F
= 100 A, VGE = 0 V, TJ = 25 °C - 1.9 2.17
I
F
VGE = ± 20 V - - ± 250 nA
IC = 52 A
= 400 V
V
CC
= 15 V
V
GE
Internal gate resistors (see electrical diagram)
I
= 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
C
Energy losses include tail and diode reverse
recovery, T
= 25 °C
J
Internal gate resistors (see electrical diagram)
I
= 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
C
Energy losses include tail and diode reverse
recovery, T
= 150 °C
J
VGE = 0 V
= 30 V
V
CC
f = 1.0 MHz
- 331 385
-4452
- 133 176
-0.26-
-1.2-
-1.46-
-0.73-
-1.66-
-2.39-
- 7100 -
-510-
-140-
-8297ns
VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
- 8.3 10.6 A
- 340 514 nC
VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
= 125 °C
T
J
- 137 153 ns
- 12.7 14.8 A
- 870 1132 nC
V
mA
VI
nCGate to emitter charge (turn-on) Q
mJTurn-off switching loss E
mJTurn-off switching loss E
pFOutput capacitance C
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94468
2 Revision: 01-Mar-10
50MT060WHTAPbF
"Half Bridge" IGBT MTP
Vishay High Power Products
(Warp Speed IGBT), 114 A
THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
(1)
Resistance R
Sensitivity index of the
thermistor material
0
(1)(2)
β
Notes
(1)
T0, T1 are thermistor´s temperatures
R
0
(2)
-------
R
1
⎛⎞
β
exp=
------
⎝⎠
T
1
1
, temperature in Kelvin
–
------
T
0
1
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction
temperature range
Storage temperature range T
Junction to case
Case to sink per module R
Clearance
Creepage
(1)
(1)
Mounting torque to heatsink
Weight 66 g
Note
(1)
Standard version only i.e. without optional thermistor
IGBT, Diode
IGBT
T
Stg
R
thJC
thCS
T0 = 25 °C - 30 - kΩ
T0 = 25 °C
T
= 85 °C
1
- 4000 - K
- 40 - 150
J
- 40 - 125
- - 0.38
Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
External shortest distance in air between 2 terminals 5.5 - -
Shortest distance along the external surface of the
insulating material between 2 terminals
8--
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
3 ± 10 % Nm
the spread of the compound. Lubricated threads.
°CThermistor - 40 - 125
°C/WDiode - - 0.8
mm
100
VGE = 15 V
20 μs pulse width
10
- Collector to Emitter Current (A)
C
I
1
0.1
94468_01
VCE - Collector to Emitter Voltage (V)
TJ = 150 °C
1.0
TJ = 25 °C
10
120
100
80
60
40
20
Maximum DC Collector Current (A)
94468_02
0
25
50 75 100 125
TC - Case Temperature (°C)
150
Fig. 1 - Typical Output Characteristics Fig. 2 - Maximum Collector Current vs. Case Temperature
Document Number: 94468 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 01-Mar-10 3
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