Datasheet 50MT060WHTAPbF DataSheet (Vishay)

50MT060WHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A

FEATURES

• Generation 4 warp speed IGBT technology

®

antiparallel diodes with ultrasoft

MTP

•HEXFRED
reverse recovery

• Very low conduction and switching losses

• Optional SMD thermistor (NTC)

• Very low junction to case thermal resistance

• UL approved file E78996

• Speed 60 kHz to 100 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 2.3 V

V

CE(on)

at TC = 25 °C 114 A

I

C

600 V

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low stray inductance design for high speed operation

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 114

= 109 °C 50

T

C

TC = 109 °C 34

Any terminal to case, t = 1 minute 2500

TC = 25 °C 658

T

= 100 °C 263

C

600 V

350

350

200

± 20

A

V

W

Document Number: 94468 For technical questions, contact: [e-mail]
Revision: 01-Mar-10 1

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50MT060WHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP

(Warp Speed IGBT), 114 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Collector to emitter voltage V

Gate threshold voltage V

Collector to emitter leaking current I

Diode forward voltage drop V

Gate to emitter leakage current I

(BR)CESVGE

CE(on)

GE(th)IC

CES

FM

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on switching loss E

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

g

ge

gc

on

off

ts

on

off

ts

ies

oes

res

rr

rr

rr

rr

rr

rr

= 0 V, IC = 500 μA 600 - - V

VGE = 15 V, IC = 50 A - 2.3 3.15

= 15 V, IC = 100 A - 2.5 3.2

V

GE

= 15 V, IC = 50 A, TJ = 150 °C - 1.72 2.17

V

GE

= 0.5 mA 3 - 6

VGE = 0 V, IC = 600 A - - 0.4

V

= 0 V, IC = 600 A, TJ = 150 °C - - 10

GE

IF = 50 A, VGE = 0 V - 1.58 1.80

= 50 A, VGE = 0 V, TJ = 150 °C - 1.49 1.68

F

= 100 A, VGE = 0 V, TJ = 25 °C - 1.9 2.17

I

F

VGE = ± 20 V - - ± 250 nA

IC = 52 A

= 400 V

V

CC

= 15 V

V

GE

Internal gate resistors (see electrical diagram)
I

= 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH

C

Energy losses include tail and diode reverse
recovery, T

= 25 °C

J

Internal gate resistors (see electrical diagram)
I

= 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH

C

Energy losses include tail and diode reverse
recovery, T

= 150 °C

J

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz

- 331 385

-4452

- 133 176

-0.26-

-1.2-

-1.46-

-0.73-

-1.66-

-2.39-

- 7100 -

-510-

-140-

-8297ns
VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs

- 8.3 10.6 A

- 340 514 nC

VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs

= 125 °C

T

J

- 137 153 ns

- 12.7 14.8 A

- 870 1132 nC

V

mA

VI

nCGate to emitter charge (turn-on) Q

mJTurn-off switching loss E

mJTurn-off switching loss E

pFOutput capacitance C

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94468

2 Revision: 01-Mar-10

50MT060WHTAPbF

"Half Bridge" IGBT MTP

Vishay High Power Products

(Warp Speed IGBT), 114 A

THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Resistance R

Sensitivity index of the
thermistor material

0

(1)(2)

β

Notes

(1)

T0, T1 are thermistor´s temperatures

R

0

(2)

-------

R

1

⎛⎞

β

exp=

------

⎝⎠

T

1

1

, temperature in Kelvin

–

------

T

0

1

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction
temperature range

Storage temperature range T

Junction to case

Case to sink per module R

Clearance

Creepage

(1)

(1)

Mounting torque to heatsink

Weight 66 g

Note

(1)

Standard version only i.e. without optional thermistor

IGBT, Diode

IGBT

T

Stg

R

thJC

thCS

T0 = 25 °C - 30 - kΩ

T0 = 25 °C
T

= 85 °C

1

- 4000 - K

- 40 - 150

J

- 40 - 125

- - 0.38

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

External shortest distance in air between 2 terminals 5.5 - -

Shortest distance along the external surface of the
insulating material between 2 terminals

8--

A mounting compound is recommended and the
torque should be checked after 3 hours to allow for

3 ± 10 % Nm

the spread of the compound. Lubricated threads.

°CThermistor - 40 - 125

°C/WDiode - - 0.8

mm

100

VGE = 15 V
20 μs pulse width

10

- Collector to Emitter Current (A)

C

I

1

0.1

94468_01

VCE - Collector to Emitter Voltage (V)

TJ = 150 °C

1.0

TJ = 25 °C

10

120

100

80

60

40

20

Maximum DC Collector Current (A)

94468_02

0

25

50 75 100 125

TC - Case Temperature (°C)

150

Fig. 1 - Typical Output Characteristics Fig. 2 - Maximum Collector Current vs. Case Temperature

Document Number: 94468 For technical questions, contact: [e-mail]

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Revision: 01-Mar-10 3

50MT060WHTAPbF

Vishay High Power Products

3.0

2.5

2.0

Voltage (V)

1.5

- Typical Collector to Emitter

CE

V

1.0

94468_03

40 60 80 100 120 140

20

TJ - Junction Temperature (°C)

Fig. 3 - Typical Collector to Emitter Voltage vs.

Junction Temperature

20

VCC = 400 V

= 52 A

I

C

16

12

8

IC = 100 A

IC = 50 A

IC = 20 A

"Half Bridge" IGBT MTP

(Warp Speed IGBT), 114 A

160

140

120

(ns)

rr

t

100

80

60

160

94468_06

100

Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt

100

VR = 200 V

(A)

10

RRM

I

VR = 200 V

IF = 50 A, TJ = 125 °C

IF = 50 A, TJ = 25 °C

1000

dIF/dt (A/µs)

IF = 50 A, TJ = 125 °C

IF = 50 A, TJ = 25 °C

- Gate to Emitter Voltage (V)

GE

V

94468_04

100

10

- Instantaneous Forward Current (A)

F

I

94468_05

4

0

0

100 200 300

OG - Typical Gate Charge (nC)

Fig. 4 - Typical Gate Charge vs.

Gate to Emitter Votlage

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

1

0.4

0.8 1.2 1.6 2.0

V

- Forward Voltage Drop (V)

FM

Fig. 5 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

400

2.4

1

100

94468_07

dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Current vs. dI

2000

VR = 200 V

1500

IF = 50 A, TJ = 125 °C

1000

(nC)

rr

Q

500

IF = 50 A, TJ = 25 °C

0

100

94468_08

dIF/dt (A/μs)

Fig. 8 - Typical Stored Charge vs. dI

1000

/dt

F

1000

/dt

F

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Document Number: 94468

4 Revision: 01-Mar-10

50MT060WHTAPbF

3, 4

11

12

5, 6

9

10

7, 8

Fig. 9 - Functional Diagram Fig. 10 - Electrical Diagram

Thermistor

ORDERING INFORMATION TABLE

Device code

50 MT 060 W H T A PbF

"Half Bridge" IGBT MTP

(Warp Speed IGBT), 114 A

2

T

R

1

option

Vishay High Power Products

3, 4

10

11

12

9

10

Ω

10 Ω

10 Ω

10 Ω

7, 8

5, 6

CIRCUIT CONFIGURATION

51324678

1 - Current rating (50 = 50 A)

2 - Essential part number

3 - Voltage rating (060 = 600 V)

4 - Speed/type (W = Warp IGBT)

5 - Circuit configuration (H = Half bridge)

- T = Thermistor

6

- A = Al2O3 substrate

7

- Lead (Pb)-free

8

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95175

Document Number: 94468 For technical questions, contact: [e-mail]
Revision: 01-Mar-10 5

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DIMENSIONS in millimeters

Ø 1.1Ø 5

3.5

33

31.8

12 ± 0.5

4

20.5

2.5

87

6

543

2

1

13

9

10 11

12

1.8

8.1

45°

5.4 ± 0.1

5.7 ± 0.1

1.2 ± 0.1

7.2 ± 0.1

7.8 ± 0.1

3 ± 0.1

27.5

11.35

± 0.1

11.35

± 0.1

R2.6 (x 3)

R5.8 (x 2)

8.7 ± 0.1

6 ± 0.1

3 ± 0.1

8.5 ± 0.1

39.5 ± 0.1

44.5

48.7

63.5 ± 0.25

1.3

Outline Dimensions

Vishay Semiconductors

MTP

Note

• Unused terminals are not assembled in the package

Document Number: 95175 For technical questions, contact: [e-mail]
Revision: 18-Mar-08 1

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including but not limited to the warranty expressed therein.

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