Toshiba TO-3P(H)IS, TO-3P(LH) Schematic

Horizontal-Deflection

Output Transistors

PRODUCT GUIDE

1

Outline

Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors (HV-Trs). Radical redesign of
the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density
and superior electrical characteristics compared to those of fourth-generation products. Toshiba’s propriety glass­mesa structure results in a high breakdown voltage.
Thanks to Toshiba’s wealth of experience and the wide variety of products which the company can offer, Toshiba
horizontal-deflection-output transistors are used World-wide in color TVs and video display monitors.

2

Appearance, Package and Weight

The photographs below show the products and their markings. The packages shown are is the straight-lead
packages used for standard products.

Appearance

TO-3P(H)IS TO-3P(LH)

2SC5411

5.5g ( typ. )

2SC5570

9.75g ( typ. )

Package dimensions

3.6 ± 0.3 3.0 ± 0.315.5 ± 0.5

4.0

2.3 max

0.95 max

5.45

+ 0.25

3.3

4.5

0.9 – 0.1

123

10.0

1.2

2.5 2.0

5.45

2.0

26.5 ± 0.5

5˚

16.4 min

5.5 ± 0.3

10˚

1. Base

2. Collector

3. Emitter

(Unit : mm)

TO-3P(LH)TO-3P(H)IS

10˚

23.0

22.0 ± 0.5

5˚

5˚

20.5 max 3.3 ± 0.2

2.5

3.0

123

1.5

1.5

1.5

2.50

+ 0.3

1.0 – 0.25

5.45 ± 0.15 5.45 ± 0.15

– 0.10

+ 0.25

0.6

6.0
± 0.5

4.0

26.0

2.0

11.0

± 0.6

20.0

5.2 max

2.8

1. Base

2. Collector (heat sink)

3. Emitter

2.0

3

3

BE

BE

Device Trends

Market trends and the development of horizontal-deflection output transistors

Device Trends

Market requirements

TV

Wide-screen TVs

Wide-screen

•

aspect ratio: (4 : 3) –> (16 : 9)

Large screen size

•

Flat screen

•

Low loss

•

Lower prices

•

Development of Horizontal-Deflection Output Transistors

HDTVs / Projectors

Multimedia-compatible TVs

Digital TV

Improved in screen resolution quality

•

Screen resolution: 525p, 1125i, 780p
Progressive system is improved
Starting grand wave digital
broadcasting
Various appllications such as
DVDs and Cable TVs

Various screen size

•

Flat screen

•

Low loss

•

Emitter contact shape and chip size optimization

Enhancement of 1700 V

•

product line

Low price due to reduction in

•

chip size

Fourth generation of horizontal-

deflection output transistors

Development of 2000-V products

•

Development of products incorporating

•

diodes for use in digital TVs

Shorter t

•

•

V

•

TO-3P(H)IS packages
21-A products available

•

rr

Reduced saturation voltage

(sat) = 3 V (max)

CE

High-current devices housed in

Reduced variation in product characteristics

Fifth generation of horizontal-deflection

s

output transistors

Video display monitors

High horizontal frequency

•

21 inches f

Large screen size

•

Standard size: 15 inches –> 17 inches

Low price

•

Reduced part count

(driving circuit and resonating capacitor are fixed)
Low loss

•

Flat screen

•

Reduced switching loss (tf parts) due to

•

high-frequency operation tf = 150 ns (max)

Reduced saturation voltage at high currents

•

V

CE

High-current devices housed in

•

TO-3P(H)IS packages
21-A products available

Increased allowable power dissipation

•

TO-3P(H) IS 65 W –> 75 W
TO-3P(LH) 200 W –> 220 W

Reduced variation in product characteristics

•

= 120 kHz –> 135 kHz

H

(sat) = 3 V (max)

4

High breakdown capability

1

The product features a glass mesa structure,
the use of which yields a wide forward- and
reverse-biased safe operating area.

Low saturation voltage

2

VCE(sat) = 3 V (max)
Note: Used for 2SC-Series devices without
damper diodes.

Wider range of optimum drive conditions

3

Fluctuation in optimum drive conditions due to variation in device quality has been minimized for
ease of design.

Revised emitter contact shape and optimized chip size

3

Chip design has been optimized using Toshiba simulation technology. The emitter's contact area
has been widened by changing the contact shape below the emitter electrode from comb type to the
new mesh type. As a result, the saturation voltage (V
reduced, thus reducing switching loss.

Features of Fourth and Fifth Generation

Toshiba’s proprietary “glass mesa” structure Contact shape

Glass

Emitter

+

N

P

–

N

+

N

Collector

(sat)) and fall time (tf) have both been

CE

Base

passivation

Conventional comb type

Fourth and fifth-generation

mesh type

4

5

Comparison of Product Characteristic Curve, Features and Emitter-Contact Design

Generation

Main application

•

• Features

First Generation

TVs

•

• High-voltage
1500 V

• Improved R-SOA

• Improved switching speeds
fH(max) = 32 kHz

• Development of TO-3P(H)IS
Package

Second Generation

TVs

•

• High-current devices products

Video displays

•

• Improved switching speeds
fH(max) = 64 kHz

• Development of TO-3P(LH)
Package

Design

Emitter contact shape

@

fH, ICP, I

(

t, I

, V

C

B1(end)

)

/ div

CE

, V

@

15.75kHz, 5A, 1A, 1200V

CP

(

200ns, 1A, 10v) / div

Typical Products and Waveforms

TVs Video displays

Comb type I 2SD1556 (1500 V / 6A)

I

C

V

BE

STRIPE type

BE

OA, OV

2SD2253 (1700 V / 6A)

OA, OV

CE

t

Loss

stg

t

stg

Loss

tf Loss

I

C

V

CE

tf Loss

@100kHz, 8A, 1A, 1200V

(

50ns, 1A, 10v) / div

2SC4290A (1500 V / 20A)

I

C

V

CE

OA, OV

t

Loss

stg

tf Loss

Third Generation

TVs

•

• Improvements over
first-generation products

Video displays

•

• Improvements over
second-generation products

• Improved switching speeds
fH(max) = 80 kHz

Fourth Generation

TVs

•

• Improvements over first- and
third-generation products

Digital TVs

•

• Development of new 2000-V
products

Video displays

•

• Improvements over
third-generation products

• Improved switching speeds
fH(max) = 130 kHz

Fifth Generation

Digital TVs

•

• Enhanced 2000-V product line

• Improved speeds for products
incorporating damper diodes

Video displays

•

• Improvements over
fourth-generation products

• Reduced loss

• Improvement in drivability

Comb type II

BE

Mesh type I or
Crystal-mesh type

BE

Mesh type II

BE

2SD2553 (1700 V / 8A)

I

C

V

CE

OA, OV

t

Loss

stg

tf Loss

2SD2638 (1700 V / 7A)

I

C

V

CE

OA, OV

t

Loss

stg

tf Loss

2SC5142 (1500 V / 20A)

I

C

V

CE

OA, OV

t

Loss

stg

tf Loss

2SC5445 (1500 V / 20A)

I

C

V

CE

OA, OV

t

Loss

stg

tf Loss

2SC5695 (1500 V / 22A)

I

C

V

CE

OA, OV

t

Loss

stg

tf Loss

5

6

For video displays

1

Product No.

2SC5570
2SC5587
2SC5588
2SC5589
2SC5590

2SC5695
2SC5717
*(S3D20)
*(S3D21)

For color TVs

2

Product No.

2SD2638

For digital TVs

3

Product No.

2SC5570
2SC5588
2SC5590
2SC5612
2SC5716

*(2SC5748)
*(2SC5749)

*(S3D21)

New Products

V

1700
1500
1700
1500
1700
1500
1500
1500
1700

V

1700 28-inch, 15.75 kHz

V

1700
1700
1700
2000
1700
2000
2000
1700

Maximum Ratings

I

CBO

(V)(A)(W)

28
17
15
18
16
22
21
14
28

Maximum Ratings

CBO

(V)(A)(W)

Maximum Ratings

CBO

(V)(A)(W)

28
15
16
22

16
16
28

P

C

220

75

75
200
200
200

75

55
210

I

P

C

750

I

P

C

220

50

50
220

8

55
210
210
210

C

21-inch, 130 kHz
19-inch, 110 kHz
19-inch, 90 kHz
19-inch, 120 kHz
19-inch, 100 kHz
21-inch, 130 kHz
19-inch, 120 kHz
19-inch, 92 kHz
21-inch, 130 kHz

C

C

32-inch, 32 kHz
24-inch, 32 kHz
28-inch, 32 kHz
32-inch, 32 kHz
32-inch, 32 kHz
32-inch, 32 kHz
32-inch, 32 kHz
32-inch, 32 kHz

Target Use Remarks

Device with highest I
High-current version of 2SC5411
1700-V version of 2SC5411
2SC5587 and 2SC5589 use same chip.
2SC5588 and 2SC5590 use same chip.
Equivalent to 2SC5445
2SC5717 and 2SC5695 use same chip.
Equivalent to 2SC5411
Equivalent to 2SC5570

Target Use Remarks

Equivalent to 2SD2553

Target Use Remarks

Device with highest I

˜

1700-V version of 2SC5411
2SC5588 and 2SC5590 use same chip.

˜

˜

= 2000 V series

V

CBO

Built-in damper diode (High-current version of 2SC5143)

= 2000 V series

V

CBO

V

= 2000 V series (built-in damper diode)

CBO

Equivalent to 2SC5570

(max) ratings

C

(max) ratings

C

Note

★
★

★: Production schedules are provisional.

Note

Note

★
★
★

★: Production schedules are provisional.

7

Package

P

C

**

IC (sat)

3 A

3.5 A
4 A

4.5 A
5 A

5.5 A
6 A
7 A

8 A

11 A
12 A

14 A
15 A
17 A

22 A

Notes: **: IC(sat) is value of IC for V

( )

6

*

Product Line Matrix

Built-in

damper diode

2SD2599
2SD2586

2SD2499
S2055N
2SD2539

2SC5339

2SC5280
2SD2559

: 3rd generation (old design)
: 4th generation (new design)
: 5th generation (new design)
: 5th generation (new design under development)

V

CBO

TO-3P(H)IS

40 W to 75 W

No built-in

damper diode

2SD2498
S2000N

2SD2500

2SC5386
2SC5404
2SC5387
2SC5411

*

(S3D20)

2SC5587

2SC5717

= 1500 V V

TO-3P(H)IS

40 W to 75 W

Built-in

2SD2550
2SD2551

2SD2638

2SD2553

2SC5716

CE

(sat).

TO-3P(LH)

180 W to 220 W

No built-in

damper diode

2SC5421

2SC5589
2SC5445

2SC5695

damper diode

= 1700 V V

CBO

No built-in

damper diode

2SC5588

TO-3P(LH)

180 W to 220 W

No built-in

damper diode

2SC5422

2SC5590
2SC5446

2SC5570

*(S3D21)

= 2000 V

CBO

TO-3P(LH)

180 W to 220 W

Built-in

damper diode

No built-in

damper diode

*(2SC5749) *(2SC5748)

2SC5612

8

2SC Series

1

Product No.

2SC5280
2SC5339
2SC5386
2SC5387
2SC5404
2SC5411
2SC5421
2SC5422
2SC5445
2SC5446
2SC5570
2SC5587
2SC5588
2SC5589
2SC5590
2SC5612

2SC5695

2SC5716

2SC5717
*(2SC5748)
*(2SC5749)
*(S3D20)
*(S3D21)

Characteristics List

Maximum Ratings

V

CBO

(V)

1500
1500
1500
1500
1500
1500
1500
1700
1500
1700
1700
1500
1700
1500
1700
2000
1500
1700
1500
2000
2000
1500
1700

(A)

10

14
15
15
20
18
28
17
15
18
16
22
22

21
16
16
14
28

I

C

8
7
8

9

8

P

(W)

180
200
200
200
200

200
200
220
200

210
210

210

50
50
50
50
50
60

75
75

55
75

55

C

Built-in

damper

diode

Min Max @5V/I

(–)(

4.0

4.0

4.3

4.3

4.0

4.0

4.0

4.5

4.5

4.0

4.5

5.0

4.8

5.0

4.8

4.8

4.5

3.8

4.5

4.8

4.8

4.0

4.5

8.5

8.0

7.5

7.8

8.0

8.0

8.0

8.5

8.5

8.0

7.5

8.0

8.0

8.0

8.0

9.0

8.5

9.0

8.5

7.5

9.0

8.0

7.5

V

Maxh

5
5
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
5
3
3
3
3
3

CE(sat)

@ I

11
11
11
15
14
22
14
12
14
12
17
17

17
12
12
11
22

@ I

C

B

1.5

6

1.25

5

1.5

6
8
7

6

2

1.75

2.75

2.75

2.75

3.75

3.5

5.5

3.5
3

3.5
3

4.25

3.75

1.5

3.75
3
3

2.75

5.5

FE

C

)(V)(A)(A)

A

6
5
6
8

7
11
11
11
15
14
22
14
12
14
12
17
17

6
17
12
12
11
22

Switching Time (Max)

t

stg

(µs)(µs)

6.0

6.0

3.5

3.5

3.5

3.5

3.5

3.5

2.2

2.3

1.6

2.0

2.0

2.0

2.0

5.0

2.1

5.0

2.1

5.0

5.0

3.5

1.6

0.50

0.50

0.30

0.30

0.30

0.30

0.30

0.30

0.15

0.15

0.15

0.15

0.15

0.15

0.15

0.35

0.15

0.35

0.15

0.35

0.35

0.30

0.15

t

f

@ fH@ I

(

)(A)(–)

kHz

32

6.0

32

5.0

64

5.0

64

6.0

64

5.5

64

8.5

64

8.5

64

8.0
100
100
130
100
100
100
100

100

100

130

32

32

32
32
90

8.0

7.0

8.0

7.5

6.5

7.5

6.5

8.0

8.0

5.5

8.0

8.0

8.0

6.5

8.0

Gene-

cp

ration

4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th

5th

4th

5th
5th
5th
5th
5th

2SD Series

2

Maximum Ratings

Product No.

2SD2498
2SD2499
2SD2500
2SD2539
2SD2550
2SD2551
2SD2553

2SD2559
2SD2586
2SD2599
2SD2638

S2000 / S2055 Series

3

V

CBO

(V)

1500
1500
1500
1500
1700
1700
1700
1500
1500
1500
1700

(A)

3.5

I

10

C

6
6

7
4
5
8
8
5

7

Maximum Ratings

Product No.

S2000N
S2055N

: 3rd generation (old design)
: 4th generation (new design)
: 5th generation (new design)

( )

: 5th generation (new design under development)

*

V

CBO

(V)

1500
1500

(A)

I

C

8
8

P

(W)
50

50
50
50
50
50
50
50
50
40
50

P

(W)
50

50

C

C

Built-in

damper

diode

Built-in

damper

diode

FE

Min Max @5V/I

(–)(

5
5
4
5
8
5
5
5

4.4
8

4.5

Min Max @5V/I

(–)(

4.5

4.5

9
9
8

9
22
10

9

9

8.5
25

7.5

FE

9
9

C

)(V)(A)(A)

A

4
4
6
5
1
4
6
6

3.5

0.5

5.5

C

)(V)(A)(A)

A

4.5

4.5

5
5
3
5
8
5
5
5
5
8
5

5
5

V

CE(sat)

V

CE(sat)

@ I

3.5

5.5

@ I

4.5

4.5

Maxh

@ I

C

B

0.8

4

0.8

4

1.5

6
5
3
4
6
6

3

1

0.8

0.8

1.2

1.2

0.8

0.8

1.2

Maxh

@ I

C

B

1
1

Switching Time (Max)

t

stg

(µs)(µs)

10
11
11

10
10
12
12
10
10

t

f

0.7

0.6

0.7

0.6

9

0.6

1.0

0.7

1.0

0.6

1.0

0.8

9

Switching Time (Max)

t

stg

(µs)(µs)

12
11

0.7

0.6

t

f

@ fH@ I

(

)(A)(–)

kHz

15.75

15.75

15.75

15.75

15.75

15.75

15.75

15.75

15.75

15.75

15.75

@ fH@ I

(

)(A)(–)

kHz

15.75

15.75

3.5

5.5

4.5

4.5

Gene-

cp

ration

3rd

4

3rd

4

3rd

6

3rd

5

3rd

3

3rd

4

3rd

6

4th

6

4th
4th

3

4th

Gene-

cp

ration

3rd
3rd

7

9

Application Map

(Reference only)

Generations

2SC Series

1

2SC5411

*(S3D20)

2SC5421

#

2SC5588

#

2SC5590

#

2SC5422

$

*(2SC5748)

¥$

*(2SC5749)

$

2SC5612

2SC5387

2SC5280

¥

2SC5404

2SC5386

¥

2SC5339

¥#

2SC5716

Recommended Peak Collector Current for Actual Use Icp (A)

: (H
: (H
: (LH
: (H
: (LH
: (LH

: (LH

: (H

: (H
: (H

: (H

: (H
: (H

)
)

)

)

)

)
: (LH
: (LH

)

)

)
)

)

)
)

Example

2SDXXXX

2SCXXXX

24
22
20
18
16

)
)

14
12

: 3rd Gen. (old design)
: 4th Gen. (new design)

2SCXXXX

*

(2SCXXXX)

: 5th Gen. (new design)
: under development

Note

DAMPER

¥ : Built-in damper
f

(max) = 32kHz

H

@without additional
Damper diode

V

CBO

CBO
CBO

= 1700V
= 2000V

# : V
$ : V
(Another 1500V)

PACKAGE

(H)

: TO-3P(H)IS

(Full mold type)

(LH)

: T O-3P(LH)

10

#

8
6
4
2
0

0

20 40 60 80 100 120 140

*(S3D21)

#

2SC5570

2SC5717

2SC5445

2SC5695

2SC5587
2SC5589

#

2SC5446

: (LH
: (LH

: (H
: (LH
: (LH

: (H
: (LH
: (LH

)
)

)

)
)

)

)
)

2SD / S2000 / S2055 Series

2

¥

¥#

¥#

¥

¥

¥#

¥

¥

¥#
¥#

2SD2559

2SD2500
2SD2553

2SD2638

2SD2539
S2000N

S2055N

2SD2551
2SD2498
2SD2499

2SD2586

2SD2550
2SD2599

: (H
: (H
: (H

: (H

: (H

: (H
: (H

: (H
: (H
: (H

: (H

: (H
: (H

)
)
)

)

)

)
)

)
)
)

)

)
)

Recommended Peak Collector Current for Actual Use Icp (A)

Horizontal Frequency f

8

(kHz)

H

Note

DAMPER

7

6

5

4

3

¥ : Built-in damper
f

(max) = 32kHz

H

@without additional
Damper diode

V

CBO
CBO

CBO

= 1700V
= 2000V

# : V
$ : V
(Another 1500V)

PACKAGE

(H)

: TO-3P(H)IS

(Full mold type)

(LH)

: T O-3P(LH)

2

1

0

0

20 40 60 80 100 120 140

Horizontal Frequency fH (kHz)

8

10

Basic Circuit Structure and Operating Waveform of Horizontal-Deflection Output

Measurement conditions

fH = 69 kHz (duty 50%)

= 5 A

I

CP

= 1200 V

V

CP

Basic circuit structure

I

C

I

Drive
Circuit

SBD

B

VCE(HV-Tr)

(Damper diode)

–V

F

V

BE

HV-Tr

I

E

Damper

diode

Measurement range

X-axis

)

t (time

Y-axis

(

Base-emitter voltage

V

BE

(

Base current

I

B

(

Collector current

I

C

(

–

Reverse emitter current

I

E

(

Forward current

I

F

(

Collector-emitter voltage

V

CE

(

Deflection coil current

I

LY

(

Resonance capacitor current

I

CY

)

)

)

)

)

)

)

I

Cy

I

F

C

L

y

2µs / div

5V / div
2A / div
2A / div
2A / div
2A / div

200V / div

2A / div

)

2A / div

Main operations

Cy

operation

Damper diode

operation

t

s

HV-Tr operation

t

r

Cy

operation

HV-Tr

operation

Damper diode

operation

Operating waveform example

V

OV

I

Ly

y

OA

V

CC

OA

OA

OA

BE

I

B

I

B1(end)

dIB/dt =

I

C

– I

E

IF (Damper diode

I

B1(end)

+ I

B2

t

stg

)

t

stg

I

CP

0.9 x I

0.1 x I

t

I

B2

CP

CP

f

Enlarged wave forms of IB and IC

I

B

OA

I

B1(end)

I

0.9 x I

0.1 x I

t

f

B2

CP

CP

OA

t

stg

I

CP

I

C

OA

OA

OV

I

Cy

I

Ly

(

V

HV-Tr

CE

(

–V

Damper-diode

F

t

s

tr = π Ly Cy

)

)

t

r

V

CP

2µs / div

9

11

Test condition

1

·

@ TC = 25˚C

·

f

= 105 kHz (duty 50%, continuous opration)

H

I

= 6.5 A VCP = 953V (Vcc2 = 107 V)

CP

= 8.5 A VCP = 1220V (Vcc2 = 140 V)

I

CP

Test sample

2

Switching Data of 2SC5695

·

·

·

·

·

·

·

·

(Reference only)

–dIB / dt = 4.0A/µs (VCC1 = 24V)
Ly = 63 µH, Cy = 4000 pF

·

·

Mark

= 6.5 A ICP = 8.5 A

I

CP

tstg, tf, –dIB / dt, SW loss –– I

3

2.4

tstg (max) = 1.9 µs

2

1.6

1.2

tstg (µs)tf

0.8

0.4

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

280
240
200

(ns)

160
120

tf (max) = 140 ns

Standerd spec.

·

·

·

·

Test

Sample

tail side

Typ

storage side

B1 (end)

ICP = 6.5 A

ICP = 6.5 A
Best condition area

ICP = 6.5 A

)

h

(1

FE

@5V / 2A @5V / 10A @5V / 17A @17A / 4.25A

)

20 (min

50 (max)8 (min

50.5

33.8

24.1

ICP = 8.5 A

)

hFE (2

)

17 (max)4.8 (min

15.6

12.1

8.2

ICP = 8.5 A
Best condition area

hFE (3

)

8.3 (max

8.2

6.6

4.6

)

)

VCE (sat

3V (max

0.4V

0.6V

2.9V

)

)

10

80
40

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

4.6

4.2

(A/µs)

3.8

/ dt

3.4

B

3.0

–dI

SW loss (W)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

14
12

10

8

6
4

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

ICP = 6.5 A

SW loss (max) = 11 W

·

·

ICP = 6.5 A

I

B1 (end)

ICP = 8.5 A

ICP = 8.5 A

ICP = 8.5 A

(A)

11

Recomended values (rough calculation)

4

Switching Data of 2SC5695

tstg (max)
tf (max)

tstg (max) = (1/fH) x 0.2

tf (max) = (1/fH) x 0.01 + 50ns

Switching loss capacitance (max)

,

@Ta (max) = 40˚C, Tj (max) = 110˚C Recommended
∆Tj (max) = 110˚C –40˚C
∆Tj (max) = 70˚C Recommended

tstg (max) = 1.9µs

tf (max) = 140 ns

thermal resistance
junction to case: Rth (j-c) = 0.625˚C/W (2SC5695)
case to fin (heat-sink): Rth (c-f) = 1˚C/W (supposition)
+) fin (heat-sink) to air: Rth (f-a) = 3.5˚C/W (supposition)

TOTAL (junction on ari): Rth (f-a) = 5.125˚C/W

SW Loss Capasitance (max) = ∆Tj (max)/Rth (j-a) x 80% derating
= 70/5.125 x 0.8

= 10.9

SW loss Capasitance (max) = 11 W

·

·

·

·

·

·

12

Application Circuit Example of 2SC5695

I

C

10 v

0 v

duty 50 %

MOSFET

Semiconductors devices

MOSFET : 2SK2146
SBD : 3GWJ42C
HV-Tr : 2SC5695
Damper diode : 5TUZ52

C

1

R

1

R

3

R

2

Vcc 1 Vcc2

SBD

Others

Vcc1 15 V
Vcc2 47 V (@ 32 kHz)
156 V (@ 100 kHz)
Cy = 4500 pF
Ly = 80 µH

HV-Tr

V

I

B

R

CE

4

Cy Ly L

Damper
diode

1 =

200 Ω

R

2 =

3 Ω

R

3 =

1.85 Ω

R

4 =

15 Ω

R

1 =

200 pF

C

2 =

3.3 µF

C

=

10 mH

L

C

2

Operating waveform example (21-inch ultra-high-resolution monitor) fH = 32 kHz to 100 kHz monitor

: 0

: 0

100 ns / div

I

C

I

B

V

CE

X-axis
Y-axis

@ fH = 32 kHz

Icp = 9 A
I
dI

·

B1

(end) = 0.75 A

·

·

B

/ dt = 3.5 A / µs

·

500 ns / div

: 1 A / div VCE : 200 V / div

I

B

IC : 1 A / div

IB: 0

I

I

B

IC: 0

V

V

: 0

CE

CE

IB : 1 A / div VCE : 10 V / div
IC : 1 A / div

C

I

B

IC: 0

V

CE

@ fH = 100 kHz

Icp = 8 A

·

B1

(end) = 1. 1 A

I

·

·

B

/ dt = 3.8 A / µs

dI

·

V

I

B

IC: 0

CE

: 0

: 0

500 ns / div

I

C

I

B

V

CE

500 ns / div

V

I

B

IC: 0

CE

: 0

: 0

100 ns / div

I

C

I

B

V

CE

100 ns / div

11

13

5.45

123

5.45

1. Base

2. Collector

3. Emitter

4.95 ± 0.5 4.45 ± 0.5

9.4 ± 0.5

7.0 ± 0.5

1.8

(8.5)

(8)

5.45

123

5.45

1. Base

2. Collector

3. Emitter

15 ± 1

6.5 ± 0.5

5.3 ± 0.5

1.25

Lead-Forming

TO-3P(H)IS

2-16E302A 2-16E303A

(2.25)(2.75)

10.2±0.6

15.2±0.8

5.45

5.45

4.0 4.0

8.0

1. Base

123

2. Collector

3. Emitter

2-16E305A 2-16E306A

1.25

13.0 ± 0.5

5.45

123

5.45

5.3 ± 0.5

1. Base

2. Collector

3. Emitter

5.45

5.45

123

5.6 ± 0.5

6.9 ± 0.5

1. Base

2. Collector

3. Emitter

(Unit : mm)

2.5

7.0 ± 0.5

6.5 ± 0.5

12

2-16E307A 2-16E309A

15.4 ± 0.5

5.45

123

5.45

1. Base

2. Collector

3. Emitter

2-16E311A 2-16E313A

1.25

6.5 ± 0.56.55 min

15.4 ± 0.5

5.45

5.45

5.3 ± 0.5

5.45

(10.5)

4.95 ± 0.5 4.45 ± 0.5

5.45

1. Base

2. Collector

123

3. Emitter

123

9.4 ± 0.5

1. Base

2. Collector

3. Emitter

2.2

3.3 ± 0.5

(11)

13

TO-3P(H)IS

2-16E314A 2-16E315A

2.0

7.0 ± 0.5

35.4 ± 1.0

5.45

4.95 ± 0.5 4.45 ± 0.5

5.45

9.4 ± 0.5

5.45
123

1. Base

2. Collector

123

3. Emitter

2-16E316A

5.85 ± 0.5

10.35 ± 0.5

0.82 ± 0.5

4.0 ± 0.5

1. Base

2. Collector

3. Emitter

5.45

123

1.0.5 ± 0.5 2.95 ± 0.5

5.45

5.45

4 ± 0.5

8.0 ± 0.5

2.25

+ 1.0

4 ± 0.5

1. Base

2. Collector

3. Emitter

2.75

0.5
–

10.2

(Unit : mm)

TO-3P(LH)

5.45 ± 0.15 5.45 ± 0.15 5.45 ± 0.6

2-21F208A 2-21F218A

3.0

6.5 ± 0.6

17.0 ± 0.8

20.0 ± 0.6

5.45 ± 0.15 5.45 ± 0.15

2

1. Base

123

2. Collector (heat sink)

3. Emittor

1

3

3.5 ± 0.5

7.0 ± 0.8

18.5 ± 0.8

4.0 ± 0.54.0 ± 0.5

8.0 ± 1.0

1. Base

2. Collector (heat sink)

3. Emitter

(Unit : mm)

13

14

Explanation of markings

Toshiba hor izontal-deflection output transistors are manufactured in Japan (at the Himeji Semiconductor Works)
and in Malaysia (at Toshiba Electronics Malaysia Sdn. Bhd.). Toshiba Electronics Malaysia Sdn. Bhd. only
manufactures T O-3P(H)IS products.

Markings

(As of April 2001)

Place of Manufacture

Package type

Marking Example

Definition

TOSHIBA ELECTRONICS
MALAYSIA SDN. BHD
(made in Malaysia)

TO-3P(H)IS TO-3P(LH)

TOSHIBA

C5411

21A

3

*

Himeji Semiconductor Works
(made in Japan)

1

*

2

*

3

*

4

*

5

TOSHIBA

2SC5570

1A2

JAPAN

1

*

2

*

4

*

*

1: Manufacturer’s marking: “T”, “ ”, “TOSHIBA”

*

2: Product number or abbreviated product number

*

3: Code: “1”, “2”, “3”, “A”, “B”, “C”

*

4: Lot number: month and year of manufacture

*

Month of manufacture: January to December are denoted by the letters A to L respectively.
Year of manufacture: last decimal digit of year of manufacture
“1A”, as shown on the above package, indicates manufacture in January 2001.

5: Country of origin

*

Since TO-3P(LH) packages are only made in Japan, “JAP AN” is displayed.

14

15

Sample label

Package Label

(As of April 2001)

P/N:

TYPE
ADDC Q,TY PCS.
NOTE

BARCORD

MADE IN JAPAN

16

Package Specifications

(As of April 2001)

Package type

Packing Type

Tray
Dimensions
(unit: mm)

TO-3P(H)IS TO-3P(LH)

100 per tray, 5 trays per carton

Tolerance: ±0.7
Material: rigid vinyl chloride

184

61

76

67.6

19

14

28

6

8

290

16

12.4

Tolerance: ±0.7
Material: rigid vinyl chloride

19

27 21

290

184

52

72.5

24

Carton
Dimensions
(unit: mm)

Label

85

190

305

Label

116

303

190

15

17

2SC Series

1

Product

No.

2SC3715
2SC3716
2SC3884A
2SC3885A
2SC3886A
2SC3887
2SC3887A
2SC3888
2SC3888A
2SC3889
2SC3889A
2SC3892
2SC3892A
2SC3893
2SC3893A
2SC4288
2SC4288A
2SC4289
2SC4289A
2SC4290
2SC4290A
2SC4531
2SC4532
2SC4542
2SC4560
2SC4608
2SC4757
2SC4758
2SC4759
2SC4760
2SC4761
2SC4762
2SC4763
2SC4764
2SC4765
2SC4766
2SC4806
2SC4830
2SC4916

2SC5048
2SC5129
2SC5142
2SC5143
2SC5144
2SC5148
2SC5149
2SC5150
2SC5331
2SC5332

1

( * )

2
3
4
5
6

List of Superseded, Final-Phase and Discontinued Products

Super­seded
Products

Electrical characteristics and packages are same.
Electrical characteristics have are high grade.
Electrical characteristics are low grade.
Package (allowable power disspation) are high grade.
Package (allowable power disspation) are low grade.
Damper diode is built-in or not.

Final
Phase
Products

Discon­tinued
Products

Maximum Ratings

CBO

(V)

I

(A)

12
12
16
16
20
20
10
10
10
10

10

12
10
20
10
20
12

10
15
14

C

4
5
6
7
8
6
6
7
7
8
8
7
7
8
8

200
200
200
200
200
200

200

8

200
7
8

8

200
6
7
8
6
5
6
5
6
7

200

200

8

180

200

V

1500
1500
1500
1500
1500
1400
1500
1400
1500
1400
1500
1400
1500
1400
1500
1400
1500
1400
1500
1400
1500
1500
1700
1500
1500
1700
1500
1500
1500
2000
1700
1500
1500
1500
1700
1700
1700
1500
1500
1500
1500
1500
1700
1700
1500
1500
1700
1500
1700

P

(W)

50
50
50
50
50
80
80
80
80
80
80
50
50
50
50

50

50
80

50
50
50

50
50
50
50
50
50
50
50
50
50
50

50

50
50
50

C

Built-in

damper

diode

Max

Notes: : 1st generation
: 2nd generation (final-phase or discontinued products)
: 3rd generation (old design superseded products)
: 4th generation (new design)

5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
3
3
3
3
3
3
5
3
3
3

CE(sat)

@ I

(A)

2.5

10
10
12
12
14
14

4.5

3.5

4.5

3.5

14

11

(As of April 2001)

(V)

@ I

C

(A)

0.6

3

0.8
4
5

1.2
6

1.5
4
4
5

1.2
5

1.2
6

1.5
6

1.5
5

1.2
5

1.2
6

1.5
6

1.5

2.5

2.5

3.5

3.5
7

1.7
8
7

1.7
7

1.7
6

1.5

1.2

5

1.5

6

1.7

7

1.5

6

1.3
5

1.2

6

0.8

4

1.3

4
5
8
6

1.5

3.5
6

1.5

2.75
8
5

1.3

6

1.5

9

2.25
8

B

1

1
1

3
3

2

1

1

1
1
1
2

2

2

Package TypeV

(H)IS(

BS)(LH

)

TO-3

*

Recommended
Replacement
and Remarks

2SD2599;
2SD2599;
2SC5386;
2SC5386;
2SC5386;
2SC5386;
2SC5386;
2SC5386;
2SC5386;
2SC5386;
2SC5386;
2SC5339;
2SC5339;
2SC5280;
2SC5280;
2SC5421;
2SC5421;
2SC5589;
2SC5589;
2SC5589;
2SC5589;
2SC5280;
2SC5422;
2SC5404;
2SC5404;
2SC5422;
2SC5386;
2SC5386;
2SC5404;
2SC5612;
2SC5588;
2SC5280;
2SC5280;
2SC5339;
2SC5716;
2SC5716;
2SC5588;
2SC5386;
2SC5280;
2SC5387;
2SC5386;
2SC5589;
2SC5716;
2SC5590;
2SC5386;
2SC5339;
2SC5588;
2SC5421;
2SC5422;

2
1
2
2
2
2

5

2

5

2

5

2

5
5
5
1
1
1
1
5
5
2
2
2
2
3
2
1
5
2
2
1
1
2
2
1
3
2
2
2
2
2
1
1
1
1
3
1
2
1
2
2
2

16

17

2SD Series

2

Product

No.

2SD811
2SD818
2SD819
2SD820
2SD821
2SD822
2SD868
2SD869
2SD870
2SD871
2SD1279
2SD1425
2SD1426
2SD1427
2SD1428
2SD1429
2SD1430
2SD1431
2SD1432
2SD1433
2SD1543
2SD1544
2SD1545
2SD1546
2SD1547
2SD1548
2SD1553
2SD1554
2SD1555
2SD1556
2SD2089
2SD2095
2SD2125
2SD2253
2SD2348
2SD2349
2SD2428
2SD2454

Super­seded
Products

Final
Phase
Products

Discon­tinued
Products

Maximum Ratings

CBO

(V)

900

I

(A)

2.5

3.5

2.5

3.5

10

2.5

3.5

2.5

3.5

2.5

3.5

2.5

3.5

3.5

10

C

6

5
6
7

5
6

5
6

5
6
7

5
6
7
8

5
6

5
6
6
8

8
7

V

1500
1500
1500
1500
1500
1500
1400
1500
1500
1400
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1700
1500
1500
1700
1700

P

(W)

50
50
50
50
50
50
50
50
50
50
50
80
80
80
80
80
80
80
80
80
40
40
50
50
50
50
40
40
50
50
40
50
50
50
50
50

200

50

C

Built-in

damper

diode

Max

10

8
8
5
5
5
8
8
5
5
5
8
8
5
5
8
8
5
5
5
8
8
5
5
5
5
8
8
5
5
1
5
5
5
5
5
5
5

CE(sat)

@ I

(A)

2.5

2.2

3.5

(V)

@ I

C

(A)

0.25

2

0.6

3

0.8

4

0.8
5
6

1.2
2

0.6
3

0.8
4

0.8
5
8
2

0.6
3

0.8
4

0.8
5
2

0.6
3

0.8
4

0.8
5
6

1.2
2

0.6
3

0.8
4

0.8
5
6

1.2
8
2

0.6
3

0.8
4

0.8
5

0.7

0.8
5
5
6

1.2
7

1.4
6

1.2
6

1.2

B

1

1
2

1

1

1

2

1

1
1

(H)IS(

Package TypeV

BS)(LH

*

Recommended

TO-3

Replacement
and Remarks

2SC3657;

2SD2599;
2SD2599;
2SC5386;
2SC5386;
2SC5386;
2SD2599;
2SD2599;

2SD2499;
2SD2539;

2SC5404;
2SD2599;
2SD2599;

2SD2499;
2SD2539;
2SD2498;
2SD2498;
2SD2498;

2SC5386;
2SC5404;

2SD2498;
2SD2498;
2SD2498;

2SC5386;
2SC5404;
2SC5404;
2SD2599;
2SD2599;

2SD2499;
2SD2539;

2SD2599;
2SD2586;

2SD2539;

2SD2638;
2SC5280;
2SC5280;

2SD2553;

2SD2638;

5
6
6
2
2
2
2

5
5
1
1
1
2

5
5
1
5
5
5
5
5
5
2
2
1
1
1
1
2
1
1
1
1
1
1
1
3
3
5
1

)

S2000 / S2055 Series

3

Product

No.

Super­seded
Products

S2000
S2000A
S2000AF
S2000F
S2055
S2055A
S2055AF
S2055F

Electrical characteristics and packages are same.

1

( * )

Electrical characteristics have are high grade.

2

Electrical characteristics are low grade.

3

Package (allowable power disspation) are high grade.

4

Package (allowable power disspation) are low grade.

5

Damper diode is built-in or not.

6

Final
Phase
Products

Discon­tinued
Products

Maximum Ratings

CBO

(V)

I

(A)

C

5
5
5
5
5
5
5
5

V

1500
1500
1500
1500
1500
1400
1500
1500

P

(W)

80
80
50
50
80
80
50
50

C

(V)

)

Built-in

damper

diode

CE(sat

@ I

@ I

Max

Notes: : 1st generation
: 2nd generation (final-phase or discontinued products)
: 3rd generation (old design)
: 4th generation (new design)

C

(A)

(A)

5
1
1
5
5
1
1
5

4.5

4.5

4.5

4.5

4.5

4.5

4.5

4.5

2
2
2
2
2
2
2
2

B

(H)IS(

Package TypeV

BS)(LH

)

TO-3

*

Recommended
Replacement
and Remarks

S2000N;
S2000N;
S2000N;
S2000N;
S2055N;
S2055N;
S2055N;
S2055N;

5

2
5
1
2
2

5
5
1
2

17

18 18

Table of Replacement

Package

P

max

C

**IC(sat)

2 A

2.2 A

2.5 A
3 A

3.5 A

4 A

4.5 A

5 A

Built-in

damper diode

2SD1553
2SD2089
2SC3715
2SC3716
2SD1554

2SD2599

2SD2095

2SD2586

2SC4764
2SD1555

2SD2499

S2055AF
S2055F

S2055N

2SC4762
2SC4916

2SC5149

2SC5339

2SD1556
2SD2125

2SD2539

TO-3P(H)IS

40 W to 75 W

(8V)
(
(
(
(

(

(

(

(
(

(

(
(

(

(
(

(
(

(
(

(

5.5 A
6 A

7 A

2SC4763

2SC5280

2SD2348

2SD2559

2SC4531
2SC2349

(

(

(

(

(
(

8 A

9 A

10 A

11 A

12 A

14 A

15 A
17 A

22 A

Notes: **: IC (sat) is value of IC for V

: Superseded, final-phase or discontinued products
: 3rd generation (old design)
: 4th generation (new design)

1V
5V
5V
8V

8V

5V

5V

5V
5V

5V

1V
5V

5V

5V
5V

5V
5V

5V
5V

5V

5V

5V

5V

5V

5V
5V

CE

)
)
)
)

)

)

)

)
)

)

)
)

)

)
)

)
)

)
)

)

)

)

)

)

)
)

(sat).

No built-in

damper diode

2SD1543

2SD1544

2SC3844A
2SC4830
2SD1545

2SD2498

S2000AF
S2000F

S2000N

2SC3885A
2SC4757
2SC5148
2SD1546

2SC3886A
2SC4758
2SC5129

2SC5386

2SD1547

2SD2500

2SC4542
2SC4759

2SC5404

2SD1548
2SC5048

2SC5387

2SC5411

*(S3D20

2SC5587

2SC5717

)

(8V)

(

)

8V

)

(

5V

(

)

5V

(

)

5V

(

)

5V

(

)

1V

(

)

5V

)

(

5V

(

)

5V

(

)

5V

)

(

3V

(

)

5V

(

)

5V

(

)

5V

(

)

3V

(

)

3V

(

)

5V

(

)

3V

(

)

5V

)

(

5V

(

)

3V

(

)

5V

(

)

3V

(

)

3V

(

)

3V

(

)

3V

)

(

3V

(5V) means V

( )

*

V

Built-in

damper diode

2SD868

2SD869

2SD870

2SD871

CE

: 5th generation (new design)
: 5th generation (new design under development)

= $900V, *1400V,1500 V V

CBO

TO-3 TO-3P(BS

50 W

Built-in

damper diode

2SD1425

2SD1426

(8V)

(

8V

(8V)

(

8V

)

No built-in

damper diode

2SD818

$2SD811
2SD819

(

10V

(8V)

(

8V

)
)

)

80 W

No built-in

damper diode

2SD1429

)

2SD1430

180 W to 220 W

damper diode

(8V)

(

)

8V

TO-3P(LH

No built-in

)

Built-in

dampe dioder

2SD2550

2SC4765

)

(

2SD820

5V

(

)

5V

2SD821

(

5V

(

5V

)

2SD1427

S2055
S2055A

)

*2SC3892
2SC3892A
2SD1429

(

5V

(

5V

(

1V

(

5V

(

5V

(

5V

)

*2SC3887
2SC3887A
2SD1431

)

S2000

)

S2000A

)

*2SC3888

)

2SC3888A

)

2SD1432

)

(

5V

(

)

5V

(

)

5V

(

)

5V

(

)

1V

(

)

5V

(

)

5V

)

(

5V

2SD2551

2SC4766

2SD2253

2SD2638

2SD822

5V

)

*2SC3893
2SC3893A

(

5V

(

5V

)

*2SC3889

)

2SC3889A
2SD1433

)

(

5V

(

)

5V

(

)

5V

2SC5143

2SC5716

2SD2428

(

2SD2454

2SD2553

(

)

5V

*2SD1279

2SC4560

(

)

5V

2SC5331
*2SC4288
2SC4288A

2SC5421

*2SC4289
2SC4289A
*2SC4290
2SC4290A
2SC5142

2SC5589
2SC5445

2SC5695

(sat) = 5 V

(5V)
(

5V

(

3V

(

5V

(

5V

(

5V

(

5V

(

3V

(

3V

(

3V

(

3V

)

)

)
)
)
)
)

)
)
)

= 1700 V V

CBO

TO-3P(H)IS TO-3P(LH

40 W to 75 W

No built-in

damper diode

(5V)

(

)

5V

2SC4806

(

)

5V

)

(

2SC4761

5V

(

)

5V

)

(

5V

(

)

2SC5150

3V

(

)

5V

(

)

5V

(

)

5V

(

)

5V

2SC4532

2SC5588

180 W to 220 W 180 W to 220 W

No built-in

damper diode

(5V)

)

(

5V

(

)

3V

2SC4608

(

)

5V

2SC5332

2SC5422

(

)

3V

2SC5590

2SC5446

2SC5570

*(S3D21

)

)

(5V)

(

3V

(

3V

(

3V

(

3V

(

3V

damper diode

)

)

)

*(2SC5749

)

)

Built-in

CBO

TO-3P(LH

)

= 2000 V

)

No built-in

damper diode

2SC4760

*(2SC5748

2SC5612

Package

P

max

C

**IC(sat)

2 A

2.2 A

2.5 A
3 A

3.5 A

4 A

4.5 A

5 A

5.5 A

(5V)

)

(3V)

6 A

7 A

8 A

9 A
10 A

11 A

12 A

14 A

15 A
17 A

22 A

18 19

OVERSEAS SUBSIDIARIES AND AFFILIATES

Toshiba America
Electronic Components, Inc.

Headquarters-Irvine, CA

9775 Toledo Way, Irvine, CA 92618, U.S.A.
Tel: [phone] Fax: [phone]

Boulder, CO

3100 Arapahoe Avenue, Ste. 500,
Boulder, CO 80303, U.S.A.
Tel: [phone] Fax: [phone]

Boynton Beach, FL(Orlando)

11924 W. Forest Hill Blvd., Ste. 22-337,
Boynton Beach, FL 33414, U.S.A.
Tel: [phone] Fax: [phone]

Deerfield, IL(Chicago)

One Pkwy., North, Suite 500, Deerfield,
IL 60015-2547, U.S.A.
Tel: [phone] Fax: [phone]

Duluth, GA(Atlanta)

3700 Crestwood Parkway, Ste. 460,
Duluth, GA 30096, U.S.A.
Tel: [phone] Fax: [phone]

Edison, NJ

2035 Lincoln Hwy. Ste. #3000, Edison
NJ 08817, U.S.A.
Tel: [phone] Fax: [phone]

Orange County, CA

2 Venture Plaza, #500 Irvine, CA 92618, U.S.A.
Tel: [phone] Fax: [phone]

Portland, OR

1700 NW 167th Place, #240,
Beaverton, OR 97006, U.S.A.
Tel: [phone] Fax: [phone]

Raleigh, NC

5511 Capitol Center Dr., #114,
Raleigh, NC 27606, U.S.A.
Tel: [phone] Fax: [phone]

Richardson, TX(Dallas)

777 East Campbell Rd., Suite 650, Richardson,
TX 75081, U.S.A.
Tel: [phone] Fax: [phone]

San Jose Engineering Center, CA

1060 Rincon Circle, San Jose, CA 95131, U.S.A.
Tel: [phone] Fax:[phone]

Wakefield, MA(Boston)

401 Edgewater Place, Suite #360, Wakefield,
MA 01880-6229, U.S.A.
Tel: [phone] Fax: [phone]

Toshiba Do Brasil S.A.

Electronic Components Div.

Estrada Dos Alvarengas, 5. 500-Bairro Alvarenga
09850-550-Sao Bernardo do campo - SP
Tel: [phone] Fax: [phone]

The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products.

No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the
responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for
the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of
human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used
within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind
the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor
Reliability Handbook" etc..

The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).
These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or
reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage
include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments,
combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed
in this document shall be made at the customer’s own risk.

Toshiba Electronics Europe GmbH

Düsseldorf Head Office

Hansaallee 181, D-40549 Düsseldorf
Germany
Tel: [phone] Fax: [phone]

München Office

Büro München Hofmannstrasse 52,
D-81378, München, Germany
Tel: [phone] Fax: [phone]

Toshiba Electronics France SARL

Immeuble Robert Schumann 3 Rue de Rome,
F-93561, Rosny-Sous-Bois, Cedex, France
Tel: [phone] Fax: [phone]

Toshiba Electronics Italiana S.R.L.

Centro Direzionale Colleoni
Palazzo Perseo Ingr. 2-Piano 6,
Via Paracelso n.12,
1-20041 Agrate Brianza Milan, Italy
Tel: [phone] Fax:[phone]

Toshiba Electronics España, S.A.

Parque Empresarial San Fernando Edificio Europa,
1a Planta, ES-28831 Madrid, Spain
Tel: [phone] Fax:[phone]

Toshiba Electronics(UK) Limited

Riverside Way, Camberley Surrey,
GU15 3YA, U.K.
Tel: [phone] Fax: [phone]

Toshiba Electronics Scandinavia AB

Gustavslundsvägen 12, 2nd Floor
S-161 15 Bromma, Sweden
Tel: [phone] Fax: [phone]

Toshiba Electronics Asia
(Singapore) Pte. Ltd.

Singapore Head Office

438B Alexandra Road, #06-08/12 Alexandra
Technopark, Singapore 119968
Tel: [phone] Fax: [phone]

Bangkok Office

135 Moo 5 Bangkadi Industrial Park, Tivanon Rd.,
Bangkadi Amphur Muang Pathumthani, Bangkok, 12000,
Thailand
Tel: [phone] Fax: [phone]

Toshiba Electronics Trading
(Malaysia)Sdn. Bhd.

Kuala Lumpur Head Office

Suite W1203, Wisma Consplant, No.2,
Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya,
Selangor Darul Ehsan, Malaysia
Tel: [phone] Fax: [phone]

Penang Office

Suite 13-1, 13th Floor, Menard Penang Garden,
42-A, Jalan Sultan Ahmad Shah,
100 50 Penang, Malaysia
Tel: [phone] Fax: [phone]

Toshiba Electronics Philippines, Inc.

26th Floor, Citibank Tower, Valero Street, Makati,
Manila, Philippines
Tel: [phone] Fax: [phone]

010124 (D)

Toshiba Electronics Asia, Ltd.

Hong Kong Head Office

Level 11, Top Glory Insurance Building, Grand Century
Place, No.193, Prince Edward Road West,
Mong Kok, Kowloon, Hong Kong
Tel: [phone] Fax: [phone]

Beijing Office

Rm 714, Beijing Fortune Building,
No.5 Dong San Huan Bei-Lu, Chao Yang District,
Beijing, 100004, China
Tel: [phone] Fax: [phone]

Chengdu Office

Unit F, 18th Floor, New Times Plaza, 42 Wenwu Road,
Xinhua Avenue, Chengdu, 610017, China
Tel: [phone] Fax: [phone]

Shenzhen Office

Rm 3010-3012, Office Tower Shun Hing Square,
Di Wang Commercial Centre, 333 ShenNan
East Road, Shenzhen, 518008, China
Tel: [phone] Fax: [phone]

Toshiba Electronics Korea Corporation

Seoul Head Office

14/F, KEC B/D, 257-7 Yangjae-Dong,
Seocho-ku, Seoul, Korea
Tel: [phone] Fax: [phone]

Gumi Office

6/F, Ssangyong Investment Securities B/D,
56 Songjung-Dong, Gumi City
Kyeongbuk, Korea
Tel: [phone] Fax: [phone]

Toshiba Technology Development
(Shanghai) Co., Ltd.

23F, Shanghai Senmao International Building, 101
Yin Cheng East Road, Pudong New Area, Shanghai,
200120, China
Tel: [phone] Fax: [phone]

Tsurong Xiamen Xiangyu Trading
Co., Ltd.

8N, Xiamen SEZ Bonded Goods Market Building,
Xiamen, Fujian, 361006, China
Tel: [phone] Fax: [phone]

Toshiba Electronics Taiwan
Corporation

Taipei Head Office

17F, Union Enterprise Plaza Bldg. 109
Min Sheng East Rd., Section 3, 0446 Taipei,
Taiwan
Tel: [phone] Fax: [phone]

Kaohsiung Office

16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd.,
80027, Kaohsiung, Taiwan
Tel: [phone] Fax: [phone]

Electronic Devices Sales & Marketing Division

1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan

Tel: [phone] Fax: [phone]

Website: http://doc.semicon.toshiba.co.jp/indexus.htm

©2001 TOSHIBA CORPORATION

Printed in Japan