Operates from 4.8–V Power Supply for
900–MHz Applications
D
Unconditionally Stable
D
Wide UHF Frequency Range: 800 MHz to
1000 MHz
D
24.5 dBm Typical Output Power
D
Linear Ramp Control
D
Transmit Enable/Disable Control
D
Advanced BiCMOS Processing Technology
for Low-Power Consumption, High
Efficiency, and Highly Linear Operation
D
Minimum of External Components
Required for Operation
D
Thermally Enhanced Surface-Mount
GND
GND
RFIN
GND
NC
VPC
GND
NC
V
BB
GND
NC – No internal connection
PWP PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
Package for Extremely Small Circuit
Footprint
description
The TRF8011 RF transmit driver amplifier is for use in 800 to 1000 MHz wireless communication systems. It
consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time-division multiple
access) applications. Very few external components are required for operation. The input is dc-blocked and
requires no external matching. The output requires external matching suitable for the application frequency.
GND
GND
RFOUT
GND
GND
TXEN
GND
V
CC
V
CC
GND
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.
The power control signal causes a linear change in output power as the voltage applied to VPC varies between
0 V and 3 V. With the RF input power applied to RFIN at 5 dBm and TXEN high, adjusting VPC from 0 V to
3 V increases the output power from a typical value of –50 dBm to 24.5 dBm at 900 MHz. Forward isolation with
the input power applied to RFIN at 5 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB.
The TRF801 1 is available in a thermally enhanced, surface-mount, 20-pin PowerPAD
TM
(PWP) thin-shrink small
outline package (TSSOP) and is characterized for operation from –40°C to 85°C. The PWP package has a
solderable pad that can improve the package thermal performance by bonding the pad to an external thermal
plane. The pad also acts as a low-inductance electrical path to ground and must be electrically connected to
the PCB ground plane as a continuation of the regular package terminals that are designated GND.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Copyright 1997, Texas Instruments Incorporated
1
TRF8011
I/O
DESCRIPTION
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUAR Y 1997 – REVISED OCTOBER 1997
functional block diagram
TXEN
VPC
3
15
6
Linear Ramp
Control
Bias/Band Gap
Reference
912, 13
VBBV
CC
18
RFOUTRFIN
Terminal Functions
TERMINAL
NAMENO.
GND1,2,4,7,10,11,14,
NC5, 8No connection. It is recommended that all NC terminals be connected to ground.
RFIN3IRF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFOUT18ORF output. RFOUT is an open-collector output and requires a decoupled connection to VCC for
TXEN15ITransmit enable input (digital). When TXEN is high, the output device is enabled.
V
BB
V
CC
VPC6IV oltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from a typical
16,17,19,20
9Control section supply voltage
12, 13First stage bias
Analog ground for all internal circuits. All signals are referenced to the ground terminals.
operation.
value of –50 dBm to 25.5 dBm.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
Input voltage range at TXEN, VPC –0.6 V to 5.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction to case, R
Thermal resistance, junction to ambient, R
Continuous total power dissipation at T
Operating junction temperature, T
Junction temperature T
Operating free-air temperature range, T
Storage temperature range, T
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Voltage values are with respect to GND.
2. No air flow and with infinite heatsink
3. With the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane of an FR4 board with no air flow
PI = 5 dBm23.524.525.5dBm
PI = 5 dBm, VPC = 0 V–50dBm
PI = 5 dBm–20dBc
PI = 5 dBm–35dBc
VCC – 0.8V
0.8V
–4085°C
†
TYP
MINTYPMAXUNIT
MAXUNIT
stability
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Stability
‡
VSWR = voltage standing wave ratio
§
No parasitic oscillations (all spurious < –70 dBc)
switching characteristics
= 4.8 V, TA = 25°C
V
CC
PARAMETERTEST CONDITIONS
t
on
t
off
Switching time, RF output OFF to ONTXEN = high, VPC stepped from 0 V to 3 V1µs
Switching time, RF output ON to OFFTXEN = high, VPC stepped from 3 V to 0 V2µs
Output VSWR‡ < 6:1 all phases,
VCC < 5.6 V, PI = 5 dBm, Output power 25 dBm,
Output frequency band : 200 MHz – 1200 MHz
§
MINTYPMAXUNIT
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
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