Texas Instruments TRF8011PWP Datasheet

TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUAR Y 1997 – REVISED OCTOBER 1997
D
Operates from 4.8–V Power Supply for 900–MHz Applications
D
Unconditionally Stable
D
Wide UHF Frequency Range: 800 MHz to 1000 MHz
D
24.5 dBm Typical Output Power
D
Linear Ramp Control
D
Transmit Enable/Disable Control
D
Advanced BiCMOS Processing Technology for Low-Power Consumption, High Efficiency, and Highly Linear Operation
D
Minimum of External Components Required for Operation
D
Thermally Enhanced Surface-Mount
GND GND
RFIN
GND
NC
VPC
GND
NC
V
BB
GND
NC – No internal connection
PWP PACKAGE
(TOP VIEW)
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
Package for Extremely Small Circuit Footprint
description
The TRF8011 RF transmit driver amplifier is for use in 800 to 1000 MHz wireless communication systems. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time-division multiple access) applications. Very few external components are required for operation. The input is dc-blocked and requires no external matching. The output requires external matching suitable for the application frequency.
GND GND RFOUT GND GND TXEN GND V
CC
V
CC
GND
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems. The power control signal causes a linear change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power applied to RFIN at 5 dBm and TXEN high, adjusting VPC from 0 V to 3 V increases the output power from a typical value of –50 dBm to 24.5 dBm at 900 MHz. Forward isolation with the input power applied to RFIN at 5 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB.
The TRF801 1 is available in a thermally enhanced, surface-mount, 20-pin PowerPAD
TM
(PWP) thin-shrink small outline package (TSSOP) and is characterized for operation from –40°C to 85°C. The PWP package has a solderable pad that can improve the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a low-inductance electrical path to ground and must be electrically connected to the PCB ground plane as a continuation of the regular package terminals that are designated GND.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 1997, Texas Instruments Incorporated
1
TRF8011
I/O
DESCRIPTION
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUAR Y 1997 – REVISED OCTOBER 1997
functional block diagram
TXEN
VPC
3
15
6
Linear Ramp
Control
Bias/Band Gap
Reference
9 12, 13
VBBV
CC
18
RFOUTRFIN
Terminal Functions
TERMINAL
NAME NO.
GND 1,2,4,7,10,11,14,
NC 5, 8 No connection. It is recommended that all NC terminals be connected to ground. RFIN 3 I RF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFOUT 18 O RF output. RFOUT is an open-collector output and requires a decoupled connection to VCC for
TXEN 15 I Transmit enable input (digital). When TXEN is high, the output device is enabled. V
BB
V
CC
VPC 6 I V oltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from a typical
16,17,19,20
9 Control section supply voltage
12, 13 First stage bias
Analog ground for all internal circuits. All signals are referenced to the ground terminals.
operation.
value of –50 dBm to 25.5 dBm.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
Input voltage range at TXEN, VPC –0.6 V to 5.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input power at RFIN 10 dBm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction to case, R Thermal resistance, junction to ambient, R Continuous total power dissipation at T Operating junction temperature, T Junction temperature T Operating free-air temperature range, T Storage temperature range, T
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Voltage values are with respect to GND.
2. No air flow and with infinite heatsink
3. With the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane of an FR4 board with no air flow
(see Note 1) –0.6 V to 5.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CC
(see Note 2) 3.5oC/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
θJC
(see Note 3) 32oC/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
θJA
= 25 oC 3.9 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
J
–40 oC to 85 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
–65 oC to 150 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
max 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Output
H
Noi
idth
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056B – FEBRUAR Y 1997 – REVISED OCTOBER 1997
recommended operating conditions
MIN NOM MAX UNIT
Supply voltage: VCC (see Note 1) 3 5 V High-level input voltage at TXEN, V Low-level input voltage at TXEN, V Operating free-air temperature, T
NOTE: 1. Voltage values are with respect to GND.
IH
IL
A
electrical characteristics over full range of operating conditions
PARAMETER TEST CONDITIONS MIN
Operating at maximum power out TXEN high, VPC = 3 V 190 200 210 mA
ICC Supply current from V
Typical values are at TA = 25°C
CC
Operating at minimum power out TXEN high, VPC = 0 V 10 mA Power down TXEN low, VPC = 0 V 0.05 mA
VCC = 4.8 V, TXEN high, VPC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS
Operating frequency range 870 925 MHz
p
p
power
Gain (small signal) PI = –20 dBm 29 dB Power added efficiency (PAE) PI = 5 dBm 31 % Input return loss (internally matched) PI = –20 dBm 12 dB
2f
armonics
p
se power in 30 kHz bandw
0
3f
0
10 MHz above f0PI = 5 dBm –92 dBm 20 MHz above f0PI = 5 dBm –93 dBm
PI = 5 dBm 23.5 24.5 25.5 dBm PI = 5 dBm, VPC = 0 V –50 dBm
PI = 5 dBm –20 dBc PI = 5 dBm –35 dBc
VCC – 0.8 V
0.8 V
–40 85 °C
TYP
MIN TYP MAX UNIT
MAX UNIT
stability
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Stability
VSWR = voltage standing wave ratio
§
No parasitic oscillations (all spurious < –70 dBc)
switching characteristics
= 4.8 V, TA = 25°C
V
CC
PARAMETER TEST CONDITIONS
t
on
t
off
Switching time, RF output OFF to ON TXEN = high, VPC stepped from 0 V to 3 V 1 µs Switching time, RF output ON to OFF TXEN = high, VPC stepped from 3 V to 0 V 2 µs
Output VSWR‡ < 6:1 all phases, VCC < 5.6 V, PI = 5 dBm, Output power 25 dBm, Output frequency band : 200 MHz – 1200 MHz
§
MIN TYP MAX UNIT
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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