TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Operates from 3.6-V and 4.8-V Power
Supplies for AMPS/NADC and GSM
Applications Respectively
D
Unconditionally Stable
D
Wide UHF Frequency Range
800 MHz to 1000 MHz
D
21 dBm and 23 dBm Typical Output Power
in AMPS/NADC and GSM Applications
Respectively
D
Linear Ramp Control
D
Transmit Enable/Disable Control
D
Advanced BiCMOS Processing Technology
for Low-Power Consumption, High
Efficiency, and Highly Linear Operation
D
Minimum of External Components
Required for Operation
D
Surface-Mount Thermally Enhanced
Package for Extremely Small Circuit
Footprint
description
The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog, and dual-mode communication
applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time
division multiple access) applications. Very few external components are required for operation.
The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section
of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of
RFOUT is approximately 50 Ω. But, since RFOUT is connected to an open-collector output device, minimal
external matching is required.
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.
The power control signal causes a linear change in output power as the voltage applied to VPC varies between
0 V and 3 V. With the RF input power applied to RFIN at 0 dBm and TXEN high, adjusting VPC from 0 V to
3 V increases the output power from a typical value of –54 dBm at VPC = 0 V to the output power appropriate
for the application:
D
21 dBm typical for AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular)
operation
D
23 dBm typical for GSM (Global System for Mobile Communications) operation
Forward isolation with the RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically
greater than 50 dB.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
GND
GND
RFIN
GND
NC
VPC
GND
NC
V
BB
GND
GND
GND
RFOUT
GND
GND
TXEN
GND
V
CC
V
CC
GND
PWP PACKAGE
(TOP VIEW)
NC – No internal connection
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1997, Texas Instruments Incorporated
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description (continued)
The TRF8010 is available in a small, surface-mount, thermally enhanced TSSOP 20-pin PWP (PowerP AD)
package and is characterized for operation from –40°C to 85°C. The PWP package has a solderable pad that
can improve the package thermal performance by bonding the pad to an external thermal plane. The pad also
acts as a low-inductance electrical path to ground and, for the TRF8010, must be electrically connected to the
PCB ground plane as a continuation of the regular package terminals that are designated GND.
functional block diagram
Bias/Band Gap
Reference
Linear Ramp
Control
VCCV
BB
RFIN
TXEN
VPC
3
15
6
RFOUT
18
12, 13
9
Terminal Functions
TERMINAL
NAME NO.
I/O
DESCRIPTION
GND 1, 2, 4, 7, 10, 11,
14, 16, 17, 19, 20
Analog ground for all internal analog circuits. All signals are referenced to the ground terminals.
NC 5, 8 No connection. It is recommended that all NC terminals be connected to ground.
RFIN 3 I RF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFOUT 18 O RF output. RFOUT is an open-collector output and requires a decoupled connection to V
CC
for operation.
TXEN 15 I Transmit enable input (digital). When TXEN is high, the output device is enabled.
V
BB
9 Control section supply voltage.
V
CC
12, 13 First stage bias.
VPC 6 I V oltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from
a typical value of –54 dBm to the maximum output power appropriate for the application.
PowerPAD is a trademark of Texas Instruments Incorporated.
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage range, V
CC
(see Note 1) –0.6 V to 5.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range at TXEN, VPC –0.6 V to 5.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input power at RFIN 10 dBm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction to case, R
θJC
(see Note 2) 3.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction to ambient, R
θJA
(see Note 3) 32°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at T
A
= 25_C 3.9 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating junction temperature, T
J
110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction temperature, T
J
max 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
–40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Voltage values are with respect to GND.
2. No air flow and with infinite heatsink
3. With the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane on an FR4 board with no air flow
recommended operating conditions
MIN NOM MAX UNIT
Supply voltage, VCC (see Note 1) 3 5 V
High-level input voltage at TXEN, V
IH
VCC –0.8 V
Low-level input voltage at TXEN, V
IL
0.8 V
Operating free-air temperature, T
A
–40 85 °C
NOTE 1: Voltage values are with respect to GND.
electrical characteristics over full range of operating conditions
supply current, V
CC
= 3.6 V
PARAMETER TEST CONDITIONS
MIN TYP‡MAX UNIT
pp
Operating at maximum power out TXEN high, VPC = 3 V 163 mA
ICCS
upply current from
V
CC
Operating at minimum power out TXEN high, VPC = 0 V 7 mA
‡
Typical values are at TA = 25_C.
supply current, VCC = 4.8 V
PARAMETER TEST CONDITIONS
MIN TYP‡MAX UNIT
Operating at maximum power out TXEN high, VPC = 3 V 155 210 mA
I
CC
Supply current from V
CC
Operating at minimum power out
TXEN high, VPC = 0 V 7 mA
Power down TXEN low, VPC = 0 V 0.05 mA
‡
Typical values are at TA = 25_C.
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AMPS/NADC operation, VCC = 3.6 V, TXEN high, VPC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Operating frequency range 824 849 MHz
p
p
PI = 0 dBm 21
POOutput
power
PI = 0 dBm
VPC = 0 V –58
dB
m
Gain (small signal) PI = –20 dBm 27 dB
Power added efficiency (PAE) PI = 0 dBm 28%
Input return loss (internally matched) PI = –20 dBm 11 dB
Output return loss (externally matched, small signal) PI = –20 dBm 11 dB
Noise power in 30 kHz bandwidth 45 MHz offset at PI = 0 dBm –97 dBm
2f
0
–20
H
armonics
3f
0
P
I
= 0 dBm
–50
dB
c
GSM operation, VCC = 4.8 V, TXEN high, VPC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Extended GSM operating frequency range 870 925 MHz
p
p
PI = 0 dBm 21.5 23 24.5
POOutput
power
PI = 0 dBm
VPC = 0 V –54
dB
m
Gain (small signal) PI = –20 dBm 28 dB
Power added efficiency (PAE) PI = 0 dBm 29%
Input return loss (internally matched) PI = –20 dBm 11 dB
Output return loss (externally matched, small signal) PI = –20 dBm 11 dB
2f
0
–28 –22
H
armonics
3f
0
P
I
= 0 dBm
–40 –35
dB
c
p
20 MHz above f
0
–95
Noi
se power in 30 kHz bandw
idth
10 MHz above f
0
P
I
= 0 dBm
–96
dB
m
stability, AMPS/NADC and GSM operation
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Stability
Output VSWR† < 6:1 all phases,
VCC < 5.6 V, PI = 0 dBm,
PO ≤ 22 dBm, Output frequency band: 200 MHz – 1200 MHz
‡
†
VSWR = voltage standing wave ratio
‡
No parasitic oscillations (all spurious < –70 dBc)
switching characteristics
AMPS/NADC and GSM operation, V
CC
= 3.6 V or 4.8 V, T
A
= 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
on
Switching time, RF output OFF to ON TXEN = high, VPC stepped from 0 V to 3 V 1 µs
t
off
Switching time, RF output ON to OFF TXEN = high, VPC stepped from 3 V to 0 V 1 µs
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 1
25
PI – Input Power – dBm
–20 –15 –10 –5 0 5
20
15
10
5
P
O
– Output power – dBm
VCC = 4.8 V
VPC = 3 V
Freq = 900 MHz
OUTPUT POWER
vs
INPUT POWER
25°C
85°C
–40°C/25°C
Figure 2
25
PI – Input Power – dBm
–20 –15 –10 –5 0 5
20
15
10
5
0
PAE – Power Added Efficiency – %
35
30
25°C
–40°C
VCC = 4.8 V
VPC = 3 V
Freq = 900 MHz
POWER ADDED EFFICIENCY
vs
INPUT POWER
85°C
Figure 3
22
f – Frequency – MHz
860 870 880 890 900 940
21.5
21
20.5
20
PAE – Power Added Efficiency – %
23
22.5
VCC = 4.8 V
VPC = 3 V
PI = 0 dBm
OUTPUT POWER AND POWER
ADDED EFFICIENCY
vs
FREQUENCY
P
O
– Output Power – dBm
30
28
26
24
22
34
32
25°C
–40°C
85°C
–40°C
25°C
85°C
PAE
P
O
910 920 930
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 4
–20
VPC – Power Control Input – V
0 0.5 1 1.5 2 2.5
–30
–40
–50
–60
30
–10
OUTPUT POWER
vs
VPC GAIN CONTROL RANGE
P
O
– Output Power – dBm
–40°C
25°C
85°C
3
PI = 0 dBm
VCC = 4.8 V
Freq = 900 MHz
10
0
20
Figure 5
VCC – Supply Voltage – V
3 3.5 4 4.5
20
18
23
21
OUTPUT POWER
vs
SUPPLY VOLTAGE
P
O
– Output Power – dBm
5
3.6 V
AMPS/NADC
Application Circuit
VPC = 3 V
Freq = 836 MHz
R1 = 0 Ω
22
19
4.8 V
GSM Application
Circuit
VPC = 3 V
Freq = 900 MHz
R1 = 180 Ω
Figure 6
10
f – Frequency – MHz
860 870 880 890 900 940
10.5
11
11.5
12
9
9.5
VCC = 4.8 V
VPC = 3 V
PI = –20 dBm
INPUT RETURN LOSS
vs
FREQUENCY
Input Return Loss – dB
–40°C
85°C
910 920 930
25°C
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
A typical application example for AMPS/NADC cellular telephone systems is shown in Figure 7.
In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to
the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list
of components and their functions is given in Table 1.
GND
GND
RFOUT
GND
GND
TXEN
GND
V
CC
V
CC
GND
GND
GND
RFIN
GND
NC
VPC
GND
NC
V
BB
GND
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
RF OUTPUT
L2
C1
C2
V
CC
TRF8010
C4
RF INPUT
l = 220 mils,
w = 20 mils
50 Ω line,
w = 20 mils
50 Ω line,
w = 20 mils
Board Material:
Type FR4,
ε
r
= 4.3, h = 12 mils
L1
50 Ω line,
w = 20 mils
C3
Figure 7. Typical AMPS/NADC Cellular Telephone Application
T able 1. External Component Selection (AMPS/NADC)
COMPONENT TYPICAL VALUE
DESIGNATION (AMPS/NADC)
FUNCTION
C1 3.3 pF Output impedance matching capacitor
C2 100 pF DC-blocking capacitor for RF output
C3 100 pF Matching capacitor
C4 1000 pF Power supply decoupling capacitor
L1 5.7 nH Output impedance matching inductor
L2 100 nH DC bias/RF choke
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
A typical application example for GSM cellular telephone systems is shown in Figure 8.
In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to
the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list
of components and their functions is given in Table 2.
GND
GND
RFOUT
GND
GND
TXEN
GND
V
CC
V
CC
GND
GND
GND
RFIN
GND
NC
VPC
GND
NC
V
BB
GND
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
RF OUTPUT
L2
C1
C2
V
CC
TRF8010
C4
RF INPUT
l = 220 mils,
w = 20 mils
50 Ω line,
w = 20 mils
50 Ω line,
w = 20 mils
Board Material:
Type FR4,
ε
r
= 4.3, h = 12 mils
L1
50 Ω line,
w = 20 mils
C3
R1
Figure 8. Typical GSM Cellular Telephone Application
Table 2. External Component Selection (GSM)
COMPONENT TYPICAL VALUE
DESIGNATION (GSM)
FUNCTION
C1 3.3 pF Output impedance matching capacitor
C2 100 pF DC-blocking capacitor for RF output
C3 100 pF Matching capacitor
C4 1000 pF Power supply decoupling capacitor
L1 6.8 nH Output impedance matching inductor
L2 100 nH DC bias/RF choke
R1 180 Ω Bias supply resistor
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MECHANICAL DATA
PWP (R-PDSO-G**) PowerPAD PLASTIC SMALL-OUTLINE P ACKAGE
0,25
0,50
0,75
0,15 NOM
Gage Plane
4073225/E 03/97
6,60
6,20
0,30
0,19
11
4,30
4,50
10
20
A
1
1,20 MAX
Seating Plane
0°–8°
Thermal Pad (3,18 2,41 NOM)
(see Note C)
0,10
0,65
M
0,10
28
9,80
24
7,90
9,607,70
16
5,10
14
5,10
4,904,90
DIM
A MAX
A MIN
PINS **
6,40
6,60
20
0,15
0,05
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This solderable pad
is electrically and thermally connected to the backside of the die and leads 1, 10, 11, and 20.
PowerPAD is a trademark of Texas Instruments Incorporated.
IMPORTANT NOTICE
T exas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor
product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or
severe property or environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI
products in such applications requires the written approval of an appropriate TI officer. Questions concerning
potential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards should be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property
right of TI covering or relating to any combination, machine, or process in which such semiconductor products
or services might be or are used.
Copyright 1996, Texas Instruments Incorporated
Loading...