Texas Instruments TRF8010PWP, TRF8010IPWP Datasheet
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Operates from 3.6-V and 4.8-V Power
Supplies for AMPS/NADC and GSM
Applications Respectively
D
Unconditionally Stable
D
Wide UHF Frequency Range
800 MHz to 1000 MHz
D
21 dBm and 23 dBm Typical Output Power
in AMPS/NADC and GSM Applications
Respectively
D
Linear Ramp Control
D
Transmit Enable/Disable Control
D
Advanced BiCMOS Processing Technology
for Low-Power Consumption, High
Efficiency, and Highly Linear Operation
D
Minimum of External Components
Required for Operation
D
Surface-Mount Thermally Enhanced
Package for Extremely Small Circuit
Footprint
description
The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog, and dual-mode communication
applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time
division multiple access) applications. Very few external components are required for operation.
The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section
of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of
RFOUT is approximately 50 Ω. But, since RFOUT is connected to an open-collector output device, minimal
external matching is required.
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.
The power control signal causes a linear change in output power as the voltage applied to VPC varies between
0 V and 3 V. With the RF input power applied to RFIN at 0 dBm and TXEN high, adjusting VPC from 0 V to
3 V increases the output power from a typical value of –54 dBm at VPC = 0 V to the output power appropriate
for the application:
D
21 dBm typical for AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular)
operation
D
23 dBm typical for GSM (Global System for Mobile Communications) operation
Forward isolation with the RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically
greater than 50 dB.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
GND
GND
RFIN
GND
NC
VPC
GND
NC
V
BB
GND
GND
GND
RFOUT
GND
GND
TXEN
GND
V
CC
V
CC
GND
PWP PACKAGE
(TOP VIEW)
NC – No internal connection
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1997, Texas Instruments Incorporated
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description (continued)
The TRF8010 is available in a small, surface-mount, thermally enhanced TSSOP 20-pin PWP (PowerP AD)
package and is characterized for operation from –40°C to 85°C. The PWP package has a solderable pad that
can improve the package thermal performance by bonding the pad to an external thermal plane. The pad also
acts as a low-inductance electrical path to ground and, for the TRF8010, must be electrically connected to the
PCB ground plane as a continuation of the regular package terminals that are designated GND.
functional block diagram
Bias/Band Gap
Reference
Linear Ramp
Control
VCCV
BB
RFIN
TXEN
VPC
3
15
6
RFOUT
18
12, 13
9
Terminal Functions
TERMINAL
NAME NO.
I/O
DESCRIPTION
GND 1, 2, 4, 7, 10, 11,
14, 16, 17, 19, 20
Analog ground for all internal analog circuits. All signals are referenced to the ground terminals.
NC 5, 8 No connection. It is recommended that all NC terminals be connected to ground.
RFIN 3 I RF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFOUT 18 O RF output. RFOUT is an open-collector output and requires a decoupled connection to V
CC
for operation.
TXEN 15 I Transmit enable input (digital). When TXEN is high, the output device is enabled.
V
BB
9 Control section supply voltage.
V
CC
12, 13 First stage bias.
VPC 6 I V oltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from
a typical value of –54 dBm to the maximum output power appropriate for the application.
PowerPAD is a trademark of Texas Instruments Incorporated.
TRF8010
900-MHz RF TRANSMIT DRIVER
SLWS031B – JULY 1996– REVISED MAY 1997
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage range, V
CC
(see Note 1) –0.6 V to 5.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range at TXEN, VPC –0.6 V to 5.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input power at RFIN 10 dBm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction to case, R
θJC
(see Note 2) 3.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction to ambient, R
θJA
(see Note 3) 32°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at T
A
= 25_C 3.9 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating junction temperature, T
J
110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction temperature, T
J
max 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
–40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Voltage values are with respect to GND.
2. No air flow and with infinite heatsink
3. With the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane on an FR4 board with no air flow
recommended operating conditions
MIN NOM MAX UNIT
Supply voltage, VCC (see Note 1) 3 5 V
High-level input voltage at TXEN, V
IH
VCC –0.8 V
Low-level input voltage at TXEN, V
IL
0.8 V
Operating free-air temperature, T
A
–40 85 °C
NOTE 1: Voltage values are with respect to GND.
electrical characteristics over full range of operating conditions
supply current, V
CC
= 3.6 V
PARAMETER TEST CONDITIONS
MIN TYP‡MAX UNIT
pp
Operating at maximum power out TXEN high, VPC = 3 V 163 mA
ICCS
upply current from
V
CC
Operating at minimum power out TXEN high, VPC = 0 V 7 mA
‡
Typical values are at TA = 25_C.
supply current, VCC = 4.8 V
PARAMETER TEST CONDITIONS
MIN TYP‡MAX UNIT
Operating at maximum power out TXEN high, VPC = 3 V 155 210 mA
I
CC
Supply current from V
CC
Operating at minimum power out
TXEN high, VPC = 0 V 7 mA
Power down TXEN low, VPC = 0 V 0.05 mA
‡
Typical values are at TA = 25_C.