Texas Instruments TLV2344IPWR, TLV2344IPWLE, TLV2344IPW, TLV2344IN, TLV2344IDR Datasheet

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

Wide Range of Supply Voltages Over
Specified Temperature Range:

–40°C to 85°C...2 V to 8 V

D

Fully Characterized at 3 V and 5 V

D

Single-Supply Operation

D

Common-Mode Input-Voltage Range
Extends Below the Negative Rail and Up to
V

DD

–1 V at 25°C

D

Output Voltage Range Includes Negative
Rail

D

High Input Impedance...10

12

Ω Typical

D

ESD-Protection Circuitry

D

Designed-In Latch-Up Immunity

description

The TL V234x operational amplifiers are in a family
of devices that has been specifically designed for
use in low-voltage single-supply applications.
Unlike other products in this family designed
primarily to meet aggressive power consumption
specifications, the TLV234x was developed to
offer ac performance approaching that of a BiFET
operational amplifier while operating from a
single-supply rail. At 3 V, the TLV234x has a
typical slew rate of 2.1 V/µs and 790-kHz
unity-gain bandwidth.

Each amplifier is fully functional down to a
minimum supply voltage of 2 V and is fully
characterized, tested, and specified at both 3-V
and 5-V power supplies over a temperature range
of –40°C to 85°C. The common-mode input
voltage range includes the negative rail and
extends to within 1 V of the positive rail.

AVAILABLE OPTIONS

PACKAGED DEVICES

T

A

V

IO

max

AT 25°C

SMALL OUTLINE

†

(D)

PLASTIC DIP

(N)

PLASTIC DIP

(P)

TSSOP

‡

(PW)

CHIP FORM

§

(Y)

°

°

9 mV TLV2342ID — TLV2342IP TLV2342IPWLE TLV2342Y

–

40°C to 85°C

10 mV TLV2344ID TLV2344IN — TLV2344IPWLE TLV2344Y

†

The D package is available taped and reeled. Add R suffix to the device type (e.g., TL V2342IDR).

‡

The PW package is only available left-end taped and reeled (e.g., TLV2342IPWLE).

§

Chip forms are tested at 25°C only.

Copyright  1997, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments Incorporated.

1
2
3
4

8
7
6
5

1OUT

1IN–
1IN+

V

DD–

/GND

V

DD

2OUT
2IN–
2IN+

1
2
3
4

8
7
6
5

1OUT

1IN–

1IN+

V

DD –

/GND

V

DD+

2OUT
2IN–
2IN+

1
2
3
4
5
6
7

14
13
12
11
10

9
8

1OUT

1IN–
1IN+

V

DD+

2IN+

2N–

2OUT

4OUT
4IN–
4IN+
V

DD–/GND

3IN+
3IN–
3OUT

1

14

8

7

4OUT
4IN –
4IN +
V

DD –

/GND
3IN +
3IN –
3OUT

1OUT

1IN –
1IN +
V

DD+

2IN +

2IN –

2OUT

TLV2342

D OR P PACKAGE

(TOP VIEW)

TLV2342

PW PACKAGE

(TOP VIEW)

TLV2344

D OR N PACKAGE

(TOP VIEW)

TLV2344

PW PACKAGE

(TOP VIEW)

TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued)

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS technology . The LinCMOS process also features extremely high input impedance and ultra-low input
bias currents. These parameters combined with good ac performance make the TLV234x effectual in
applications such as high-frequency filters and wide-bandwidth sensors.

T o facilitate the design of small portable equipment, the TL V234x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only

1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The

TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.

TLV2342Y chip information

This chip, when properly assembled, displays characteristics similar to the TL V2342. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.

+

–

1OUT

1IN+

1IN–

V

DD

(8)

(6)

(3)

(2)

(5)

(1)

(7)

(4)

V

DD–

/GND

+

–

2OUT

2IN+

2IN–

59

72

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(1)

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2344Y chip information

This chip, when properly assembled, displays characteristics similar to the TL V2344. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.

+

–

1OUT

1IN+

1IN–

V

DD

(4)

(3)

(2)

(1)

V

DD–

/GND

+

–

3OUT

3IN+

3IN–

(10)

(9)

(8)

+

–

2OUT

2IN+

2IN–

(3)

(5)

(6)

(7)

+

–

4OUT

4IN+

4IN–

(12)

(13)

(14)

(11)

68

108

(8)

(9)(10)

(11)(12)

(13)

(14)

(1)

(2)

(3) (4) (5)

(6)

(7)

TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

equivalent schematic (each amplifier)

IN+

P1

P2

P3 P4

P5

P6

IN–

R1

R2

R3

R4

R5

R6

R7

N1 N2

N3

N4

N5

N6

N7

D1

D2

C1

OUT

V

DD

GND

ACTUAL DEVICE COMPONENT COUNT

†

COMPONENT TLV2342 TLV2344

Transistors 54 108
Resistors 14 28
Diodes 4 8
Capacitors 2 4

†

Includes both amplifiers and all ESD, bias, and trim
circuitry.

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

5

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absolute maximum ratings over operating free-air temperature (unless otherwise noted)

†

Supply voltage, V

DD

(see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Differential input voltage, V

ID

(see Note 2) V

DD±

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, V

I

(any input) –0.3 V to V

DD

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input current, I

I

±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, I

O

±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duration of short-circuit current at (or below) T

A

= 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T

A

–40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2. Differential voltages are at the noninverting input with respect to the inverting input.

3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application selection).

DISSIPATION RATING TABLE

T

≤ 25°C DERATING FACTOR T

= 85°C

PACKAGE

A

POWER RATING ABOVE TA = 25°C

A

POWER RATING

D–8 725 mW 5.8 mW/°C 377 mW

D–14 950 mW 7.6 mW/°C 494 mW

N 1575 mW 5.6 mW/°C 364 mW
P 1000 mW 8.0 mW/°C 520 mW

PW–8 525 mW 4.2 mW/°C 273 mW

PW–14 700 mW 6.0 mW/°C 340 mW

recommended operating conditions

MIN MAX UNIT

Supply voltage, V

DD

2 8 V

p

VDD = 3 V –0.2 1.8

Common-mode input voltage, V

IC

VDD = 5 V –0.2 3.8

V

Operating free-air temperature, T

A

–40 85 °C

TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

6

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2342I electrical characteristics at specified free-air temperature

TLV2342I

PARAMETER TEST CONDITIONS

T

A

†

VDD = 3 V VDD = 5 V

UNIT

A

MIN TYP MAX MIN TYP MAX

°

p

V

O

= 1 V,

V

IC

= 1 V,

25°C

0.691.1

9

VIOInput offset voltage

R

S

= 50 Ω,

mV

R

L

= 10

k

Ω

Full range

11

11

Average temperature

p

25°C to

°

α

VIO

coefficient of input offset

voltage

85°C

2.7

2.7µV/°C

Input offset current

25°C 0.1 0.1

p

I

IO

(see Note 4)

V

O

= 1 V,

V

IC

= 1

V

85°C 22 1000 24 1000

pA

p

25°C 0.6 0.6

p

IIBInput bias current (see Note 4)

V

O

=

1 V

,

V

IC

=

1 V

85°C 175 2000 200 2000

pA

–0.2 –0.3 –0.2 –0.3

25°C

to to to to

V

Common-mode input voltage

2 2.3 4 4.2

V

ICR

g

range (see Note 5)

–0.2 –0.2

Full range

to to

V

g

1.8 3.8

°

V

IC

= 1 V,

25°C

1.75

1.9

3.2

3.7

VOHHigh-l

evel output voltage

V

ID

=

100 mV

,

IOH = –1 mA

Full range 1.7 3

V

°

V

IC

= 1 V,

25°C

120

15090150

VOLL

ow-level output voltage

V

ID

= –

100 mV

,

IOL = 1 mA

Full range 190 190

m

V

°

Large-signal differential

V

IC

= 1 V,

25°C311523

A

VD

gg

voltage amplification

R

L

= 10 kΩ,

See Note 6

Full range 2 3.5

V/mV

°

V

O

= 1 V,

25°C65786580

CMRR

C

ommon-mode rejection ratio

V

IC

=

V

ICR

min,

RS = 50 Ω

Full range 60 60

dB

°

Supply-voltage rejection ratio VIC = 1 V, VO = 1 V,

25°C70957095

k

SVR

ygj

(∆VDD/∆VIO)

IC

RS = 50 Ω

O

Full range 65 65

dB

°

pp

VO = 1 V, VIC = 1 V,

25°C

0.6531.4

3.2

IDDSu ly current

O

No load

IC

Full range 4 4.4

mA

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

7

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2342I operating characteristics at specified free-air temperature, VDD = 3 V

TLV2342I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

°

V

IC

= 1 V,

V

I(PP)

= 1 V,

p

25°C

2.1

SR

Slew rate at unity gain

R

L

= 10 kΩ,

C

L

= 20 F,

°

V/µs

S

ee Figure 34

85°C

1.7

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 35

S

,

25°C

25

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 170

BOMMaximum output-swing bandwidth

OOH

,

RL = 10 kΩ,

L

,

See Figure 34

85°C

145

kH

z

V

= 10 mV, C

= 20 pF,

25°C 790

B1Unity-gain bandwidth

I

,

RL = 10 kΩ,

L

,

See Figure 36

85°C

690

kH

z

=

=

–40°C 53°

φ

m

Phase margin

V

I

= 10 mV,

CL = 20 pF,

f = B

1

,

RL = 10 kΩ,

25°C

49°

See Figure 36

85°C 47°

TLV2342I operating characteristics at specified free-air temperature, VDD = 5 V

TLV2342I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 3.6

V

IC

= 1 V,

R

= 10 kΩ,

V

I(PP)

=

1 V

85°C 2.8

SR

Slew rate at unity gain

L

,

CL = 20 pF,

25°C 2.9

V/µs

See Figure 34VI(PP)

= 2.5

V

85°C 2.3

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 35

S

,

25°C

25

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 320

BOMMaximum output-swing bandwidth

OOH

,

RL = 10 kΩ,

L

,

See Figure 34

85°C

250

kH

z

V

= 10 mV, C

= 20 pF,

25°C 1.7

B1Unity-gain bandwidth

I

,

RL = 10 kΩ,

L

,

See Figure 36

85°C

1.2

kH

z

=

=

–40°C

49

°

φ

m

Phase margin

V

I

= 10 mV,

CL = 20 pF,

f = B

1

,

RL = 10 kΩ,

25°C

46°

See Figure 36

85°C 43°

TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

8

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2344I electrical characteristics at specified free-air temperature

TLV2344I

PARAMETER

TEST

T

A

†

VDD = 3 V VDD = 5 V

UNIT

CONDITIONS

A

MIN TYP MAX MIN TYP MAX

V

= 1 V

,

°

p

V

O

1

V,

VI = 1 V,

25°C

1.1101.1

10

VIOInput offset voltage

IC

,

RS = 50 Ω,

mV

S

RL = 10 kΩ

Full range

12

12

α

VIO

Average temperature coefficient of
input offset voltage

25°C to

85°C

2.7 2.7 µV/°C

p

V

= 1 V,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

O

,

VIC = 1 V

85°C 22 1000 24 1000

pA

p

V

= 1 V,

25°C 0.6 0.6

p

IIBInput bias current (see Note 4)

O

,

VIC = 1 V

85°C 175 2000 200 2000

pA

–0.2 –0.3 –0.2 –0.3

25°C

to to to to

V

Common-mode input voltage range

2 2.3 4 4.2

V

ICR

gg

(see Note 5)

–0.2 –0.2

Full range

to to

V

g

1.8 3.8

°

V

IC

= 1 V,

25°C

1.75

1.9

3.2

3.7

VOHHigh-l

evel output voltage

V

ID

=

100 mV

,

IOH = –1 mA

Full range 1.7 3

V

°

V

IC

= 1 V,

25°C

120

15090150

VOLL

ow-level output voltage

V

ID

= –

100 mV

,

IOL = 1 mA

Full range 190 190

m

V

°

Large-signal differential

V

IC

= 1 V,

25°C311523

A

VD

gg

voltage amplification

R

L

= 10 kΩ,

See Note 6

Full range 2 3.5

V/mV

°

V

O

= 1 V,

25°C65786580

CMRR

C

ommon-mode rejection ratio

V

IC

=

V

ICR

min,

RS = 50 Ω

Full range 60 60

dB

°

Supply-voltage rejection ratio

V

IC

= 1 V,

25°C70957095

k

SVR

ygj

(∆VDD/∆VIO)

V

O

= 1 V,

RS = 50 Ω

Full range 65 65

dB

°

V

O

= 1 V,

25°C

1.362.7

6.4

IDDS

upply curren

t

V

IC

= 1 V,

No load

Full range 8 8.8

m

A

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

9

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2344I operating characteristics at specified free-air temperature, VDD = 3 V

TLV2344I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

°

V

IC

= 1 V,

V

I(PP)

= 1 V,

p

25°C

2.1

SR

Slew rate at unity gain

R

L

= 10 kΩ,

C

L

= 20 pF,

°

V/µs

S

ee Figure 34

85°C

1.7

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 35

S

,

25°C

25

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 170

BOMMaximum output-swing bandwidth

OOH

,

RL = 10 kΩ,

L

,

See Figure 34

85°C

145

kH

z

V

= 10 mV, C

= 20 pF,

25°C 790

B1Unity-gain bandwidth

I

,

RL = 10 kΩ,

L

,

See Figure 36

85°C

690

kH

z

V

= 10 mV

,

f = B

,

–40°C 53°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 10 kΩ,

25°C

49°

See Figure 36

85°C 47°

TLV2344I operating characteristics at specified free-air temperature, VDD = 5 V

TLV2344I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 3.6

V

IC

= 1 V,

RL = 10 kΩ,

V

I(PP)

=

1 V

85°C 2.8

SR

Slew rate at unity gain

L

,

CL = 20 pF,

25°C 2.9

V/µs

See Figure 34

V

I(PP)

= 2.5

V

85°C 2.3

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 35

S

,

25°C

25

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 320

BOMMaximum output-swing bandwidth

OOH

,

RL = 10 kΩ,

L

,

See Figure 34

85°C

250

kH

z

V

= 10 mV, C

= 20 pF,

25°C 1.7

B1Unity-gain bandwidth

I

,

RL = 10 kΩ,

L

,

See Figure 36

85°C

1.2

MH

z

V

= 10 mV

,

f = B

,

–40°C

49

°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 10 kΩ,

25°C

46°

See Figure 36

85°C 43°

TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

10

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2342Y electrical characteristics, T

A

= 25°C

TLV2342Y

PARAMETER TEST CONDITIONS

VDD = 3 V VDD = 5 V

UNIT

MIN TYP MAX MIN TYP MAX

V

IO

Input offset voltage

VO = 1 V,
RS = 50 Ω,

VIC = 1 V,
RL = 10 kΩ

0.6 1.1 mV

I

IO

Input offset current (see Note 4) VO = 1 V, VIC = 1 V 0.1 0.1 pA

I

IB

Input bias current (see Note 4) VO = 1 V, VIC = 1 V 0.6 0.6 pA

V

ICR

Common-mode input voltage
range (see Note 5)

–0.3

to

2.3

–0.3

to

4.2

V

V

OH

High-level output voltage

VIC = 1 V,
IOH = –1 mA

VID = 100 mV ,

1.9 3.7 V

V

OL

Low-level output voltage

VIC = 1 V
IOL = 1 mA

VID = 100 mV ,

120 90 mV

A

VD

Large-signal differential voltage
amplification

VIC = 1 V,
See Note 6

RL = 10 kΩ,

11 23 V/mV

CMRR Common-mode rejection ratio

VO = 1 V,
RS = 50 Ω

VIC = V

ICR

min,

78 80 dB

k

SVR

Supply-voltage rejection ratio
(∆VDD/∆VID)

VO = 1 V
RS = 50 Ω

VIC = 1 V,

95 95 dB

I

DD

Supply current

VO = 1 V,
No load

VIC = 1 V,

0.65 1.4 mA

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

11

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2344Y electrical characteristics, T

A

= 25°C

TLV2344Y

PARAMETER TEST CONDITIONS

VDD = 3 V VDD = 5 V

UNIT

MIN TYP MAX MIN TYP MAX

V

IO

Input offset voltage

VO = 1 V,
RL = 10 kΩ

VIC = 1 V,
RL = 10 kΩ

1.1 1.1 mV

I

IO

Input offset current (see Note 4) VO = 1 V, VIC = 1 V 0.1 0.1 pA

I

IB

Input bias current (see Note 4) VO = 1 V, VIC = 1 V 0.6 0.6 pA

V

ICR

Common-mode input voltage
range (see Note 5)

–0.3

to

2.3

–0.3

to

4.2

V

V

OH

High-level output voltage

VIC = 1 V,
IOH = –1 mA

VID = 100 mV , 1.9 3.7 V

V

OL

Low-level output voltage

VIC = 1 V,
IOL = 1 mA

VID = –100 mV, 120 90 mV

A

VD

Large-signal differential voltage
amplification

VIC = 1 V,
See Note 6

RL = 10 kΩ,

11 23 V/mV

CMRR Common-mode rejection ratio

VO = 1 V,
RS = 50 Ω

VIC = V

ICR

min,

78 80 dB

k

SVR

Supply-voltage rejection ratio
(∆VDD/∆VID)

VO = 1 V,
RS = 50 Ω

VIC = 1 V,

95 95 dB

I

DD

Supply current

VO = 1 V,
No load

VIC = 1 V,

1.3 2.7 µA

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.