Texas Instruments TLV2341IPWR, TLV2341IPWLE, TLV2341IP, TLV2341IDR, TLV2341ID Datasheet
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages Over
Specified Temperature Range:
T
A
= –40°C to 85°C...2 V to 8 V
D
Fully Characterized at 3 V and 5 V
D
Single-Supply Operation
D
Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
V
DD
–1 V at 25°C
D
Output Voltage Range Includes Negative
Rail
D
High Input Impedance...10
12
Ω Typ
D
Low Noise...25 nV/√Hz Typically at
f = 1 kHz (High-Bias Mode)
D
ESD-Protection Circuitry
D
Designed-In Latch-Up Immunity
D
Bias-Select Feature Enables Maximum
Supply Current Range From 17 µA to
1.5 mA at 25°C
1
2
3
4
8
7
6
5
OFFSET N1
IN–
IN+
GND
BIAS SELECT
V
DD
OUT
OFFSET N2
D OR P PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
OFFSET N1
IN–
IN+
GND
BIAS SELECT
V
DD
OUT
OFFSET N2
PW PACKAGE
(TOP VIEW)
description
The TLV2341 operational amplifier has been specifically developed for low-voltage, single-supply applications
and is fully specified to operate over a voltage range of 2 V to 8 V. The device uses the Texas Instruments
silicon-gate LinCMOS technology to facilitate low-power, low-voltage operation and excellent offset-voltage
stability . LinCMOS technology also enables extremely high input impedance and low bias currents allowing
direct interface to high-impedance sources.
The TLV2341 offers a bias-select feature, which allows the device to be programmed with a wide range of
different supply currents and therefore different levels of ac performance. The supply current can be set at
17 µA, 250 µA, or 1.5 mA, which results in slew-rate specifications between 0.02 and 2.1 V/ µ s (at 3 V).
The TLV2341 operational amplifiers are especially well suited to single-supply applications and are fully
specified and characterized at 3-V and 5-V power supplies. This low-voltage single-supply operation combined
with low power consumption makes this device a good choice for remote, inaccessible, or portable
battery-powered applications. The common-mode input range includes the negative rail.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV2341 incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883 C, Methods 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
VIOmax
AT 25°C
SMALL
OUTLINE
(D)
PLASTIC
DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
–40°C to 85°C 8 mV TLV2341ID TLV2341IP TLV2341IPWLE TLV2341Y
The D package is available taped and reeled. Add R suffix to the device type (e.g., TL V2341IDR).
The PW package is only available left-end taped and reeled (e.g., TLV2341IPWLE).
Copyright 1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
bias-select feature
The TL V2342 offers a bias-select feature that allows the user to select any one of three bias levels, depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).
Table 1. Effect of Bias Selection on Performance
MODE
TYPICAL PARAMETER VALUES
TA = 25°C, VDD = 3 V
HIGH BIAS
RL = 10 kΩ
MEDIUM BIAS
RL = 100 kΩ
LOW BIAS
RL = 1 MΩ
UNIT
P
D
Power dissipation 975 195 15 µW
SR Slew rate 2.1 0.38 0.02 V/µs
V
n
Equivalent input noise voltage at f = 1 kHz 25 32 68 nV/√Hz
B
1
Unity-gain bandwidth 790 300 27 kHz
φ
m
Phase margin 46° 39° 34°
A
VD
Large-signal differential voltage amplification 11 83 400 V/mV
bias selection
Bias selection is achieved by connecting BIAS SELECT to one of three voltage levels (see Figure 1). For
medium-bias applications, it is recommended that the bias-select pin be connected to the midpoint between the
supply rails. This procedure is simple in split-supply applications since this point is ground. In single-supply
applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of
large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,
large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to
the supply midpoint after the supply is switched on. A voltage other than the midpoint may be used if it is within
the voltages specified in the following table.
To the Bias-Select Pin
1 MΩ
High
Medium
Low
V
DD
1 MΩ
0.01 µF
BIAS MODE
BIAS-SELECT VOLTAGE
(single supply)
Low
Medium
High
V
DD
1 V to VDD –1 V
GND
Figure 1. Bias Selection for Single-Supply Applications
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
high-bias mode
In the high-bias mode, the TL V2341 series feature low offset voltage drift, high input impedance, and low noise.
Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation.
medium-bias mode
The TL V2341 in the medium-bias mode features a low offset voltage drift, high input impedance, and low noise.
Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that
consumed by bipolar devices.
low-bias mode
In the low-bias mode, the TL V2341 features low offset voltage drift, high input impedance, extremely low power
consumption, and high differential voltage gain.
ORDER OF CONTENTS
TOPIC
BIAS MODE
Schematic all
Absolute maximum ratings all
Recommended operating conditions all
Electrical characteristics
Operating characteristics
Typical characteristics
high
(Figures 2 – 31)
Electrical characteristics
Operating characteristics
Typical characteristics
medium
(Figures 32 – 61)
Electrical characteristics
Operating characteristics
Typical characteristics
low
(Figures 62 – 91)
Parameter measurement information all
Application information all
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2341Y chip information
This chip, when properly assembled, displays characteristics similar to the TL V2341. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
+
–
OUT
IN+
IN–
V
DD
(7)
(3)
(2)
(6)
(4)
GND
(1)
(5)
OFFSET N1
OFFSET N2
(8)
BIAS SELECT
48
55
(8) (7)(2) (1)
(6)(5)(4)
(3)
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
• 5
equivalent schematic
P3
P1
R1
P2 R2
P4 P5
R6
P9B
P9A
P6A P6B P7B P7A P8
P10
N11
N12
N13
N10
N9
N7
R7R4R3
N1 N2
N3
R5
C1
D1 D2
N6
N4
V
DD
OFFSETN1OFFSET
N2
OUT GND BIAS
SELECT
IN–
IN+
P11
P12
N5
COMPONENT COUNT
†
Transistors
Diodes
Resistors
Capacitors
27
2
7
1
†
Includes the amplifier and all
ESD, bias, and trim circuitry
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage (see Note 2) V
DD±
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input) –0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) T
A
= 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
–40°C to 85° C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any conditions beyond those indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may effect device reliability .
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at the noninverting input with respect to the inverting input.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
T
≤ 25°C DERATING FACTOR T
= 85°C
PACKAGE
A
POWER RATING ABOVE TA = 25°C
A
POWER RATING
D 725 mW 5.8 mW/°C 377 mW
P 1000 mW 8.0 mW/°C 520 mW
PW 525 mW 4.2 mW/° C 273 mW
recommended operating conditions
MIN MAX UNIT
Supply voltage, V
DD
2 8 V
p
VDD = 3 V –0.2 1.8
Common-mode input voltage, V
IC
VDD = 5 V –0.2 3.8
V
Operating free-air temperature, T
A
–40 85 °C
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature
TLV2341I
PARAMETER
TEST
T
A
†
VDD = 3 V VDD = 5 V
UNIT
CONDITIONS
MIN TYP MAX MIN TYP MAX
p
VO = 1 V,
V
= 1 V,
25°C 0.6 8 1.1 8
VIOInput offset voltage
IC
,
RS = 50 Ω,
RL = 10 kΩ
Full range 10 10
mV
Average temperature of input 25°C to
°
α
VIO
g
offset voltage 85°C
2.7
2.7µV/°C
p
V
= 1 V,
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
O
,
VIC = 1 V
85°C 22 1000 24 1000
pA
p
V
= 1 V,
25°C 0.6 0.6
p
IIBInput bias current (see Note 4)
O
,
VIC = 1 V
85°C 175 2000 200 2000
pA
°
–0.2
–0.3
–0.2
–0.3
Common-mode input voltage range
25°C
t
o
2
t
o
2.3
t
o
4
t
o
4.2
V
V
ICR
gg
(see Note 5)
–0.2
–0.2
Full range
t
o
1.8
t
o
3.8
V
p
VIC = 1 V,
25°C 1.75 1.9 3.2 3.7
VOHHigh-level output voltage
V
ID
=
100 mV
,
IOH = –1 mA
Full range 1.7 3
V
p
VIC = 1 V,
25°C 120 150 90 150
VOLLow-level output voltage
V
ID
= –
100 mV
,
IOL = 1 mA
Full range 190 190
mV
Large-signal differential
VIC = 1 V,
25°C 3 11 5 23
A
VD
gg
voltage amplification
R
L
= 10 kΩ,
See Note 6
Full range 2 3.5
V/mV
VO = 1 V,
25°C 65 78 65 80
CMRR
Common-mode rejection ratio
V
IC
=
V
ICR
m
i
n,
RS = 50 Ω
Full range 60 60
dB
Supply-voltage rejection ratio
VIC = 1 V,
25°C 70 95 70 95
k
SVR
ygj
(∆VDD/∆VIO)
V
O
= 1 V,
RS = 50 Ω
Full range 65 65
dB
I
I(SEL)
Bias select current V
I(SEL) = 0
25°C –1.2 –1.4 µA
pp
VO = 1 V,
25°C 325 1500 675 1600
IDDSupply current
V
IC
= 1 V,
No load
Full range 2000 2200
µ
A
†
Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, V
DD
= 3 V
TLV2341I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
VIC = 1 V,
V
I(PP)
= 1 V,
p
25°C 2.1
SR
Slew rate at unity gain
R
L
=
10 kΩ
,
See Figure 92
C
L
=
20 pF
,
85°C
1.7
V/µs
p
f = kHz, R
= 20 Ω,
°
VnEquivalent input noise voltage
,
See Figure 93
S
,
25°C
25
n
V/√H
z
p
V
= V
, C
= 20 pF,
25°C 170
BOMMaximum output-swing bandwidth
OOH
,
RL = 10 kΩ,
L
,
See Figure 92
85°C
145
kH
z
V
= 10 mV, C
= 20 pF,
25°C 790
B1Unity-gain bandwidth
I
,
RL = 10 kΩ,
L
,
See Figure 94
85°C 690
kH
z
V
= 10 mV
,
f = B
,
–40°C 53°
φ
m
Phase margin
V
I
10
mV,
CL = 20 pF,
f B1,
RL = 1 MΩ,
25°C
49°
See Figure 94
85°C 47°
operating characteristics at specified free-air temperature, VDD = 5 V
TLV2341I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
25°C 3.6
V
IC
= 1 V,
RL = 10 kΩ,
V
I(PP)
= 1
V
85°C 2.8
SR
Slew rate at unity gain
L
,
CL = 20 pF,
25°C 2.9
V/µs
See Figure 92
V
I(PP)
= 2.5
V
85°C 2.3
p
f = 1 kHz, R
= 20 Ω,
°
VnEquivalent input noise voltage
,
See Figure 93
S
,
25°C
25
n
V/√H
z
p
V
= V
, C
= 20 pF,
25°C 320
BOMMaximum output-swing bandwidth
OOH
,
RL = 10 kΩ,
L
,
See Figure 92
85°C
250
kH
z
V
= 10 mV, C
= 20 pF,
25°C 1.7
B1Unity-gain bandwidth
I
,
RL = 10 kΩ,
L
,
See Figure 94
85°C
1.2
MH
z
V
= 10 mV
,
f = B
,
–40°C 49°
φ
m
Phase margin
V
I
10
mV,
CL = 20 pF,
f B1,
RL = 10 kΩ,
25°C
46°
See Figure 94
85°C 43°
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics, T
A
= 25°C
TLV2341I
PARAMETER TEST CONDITIONS
VDD = 3 V VDD = 5 V
UNIT
MIN TYP MAX MIN TYP MAX
V
IO
Input offset voltage
VO = 1 V,
RS = 50 Ω,
VIC = 1 V,
RL = 10 kΩ
0.6 8 1.1 8 mV
I
IO
Input offset current (see Note 4) VO = 1 V, VIC = 1 V 0.1 0.1 pA
I
IB
Input bias current (see Note 4) VO = 1 V, VIC = 1 V 0.6 0.6 pA
–0.2 –0.3 –0.2 –0.3
V
ICR
C
ommon-mode input voltage
to to to to
V
ICR
range (see Note 5)
2 2.3 4 4.2
p
VIC = 1 V,
VID = 100 mV ,
VOHHigh-level output voltage
I
OH
= –
1
mA
1.75
1.9
3.2
3.7
V
p
V
= 1 V, V
= –100 mV,
VOLLow-level output voltage
IC
,
IOL = 1 mA
ID
,
120
15090150
mV
A
VD
Large-signal differential voltage
amplification
VIC = 1 V,
See Note 6
RL = 10 kΩ,
3 11 50 23 V/mV
V
= 1 V, V
= V
min,
CMRR
Common-mode rejection ratio
O
,
RS = 50 Ω
IC ICR
,
65786580dB
Supply-voltage rejection ratio V
= 1 V, V
= 1 V,
k
SVR
ygj
(∆VDD/∆VIO)
O
,
RS = 50 Ω
IC
,
70957095dB
I
I(SEL)
Bias select current V
I(SEL)
= 0 –1.2 –1.4 µA
pp
VO = 1 V, VIC = 1 V,
IDDSupply current
O
No load
IC
325
1500
675
1600µA
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Table of Graphs
FIGURE
V
IO
Input offset voltage Distribution 2,3
α
VIO
Input offset voltage temperature coefficient Distribution 4,5
vs Output current 6
V
OH
High-level output voltage
vs Supply voltage
7
OH
gg
g
vs Temperature 8
vs Common-mode input voltage 9
p
vs Common mode in ut voltage
vs Temperature
9
10, 12
VOLLow-level output voltage
vs Differential input voltage
,
11
vs Low-level output current 13
vs Supply voltage 14
A
VD
Large-signal differential voltage amplification
yg
vs Temperature 15
VD
gg g
vs Frequency 26, 27
I
IB
Input bias current vs Temperature 16
I
IO
Input offset current vs Temperature 16
V
IC
Common-mode input voltage vs Supply voltage 17
pp
vs Supply voltage 18
IDDSupply current
yg
vs Temperature 19
vs Supply voltage 20
SR
Slew rate
yg
vs Temperature 21
Bias select current vs Supply voltage 22
V
O(PP)
Maximum peak-to-peak output voltage vs Frequency 23
vs Temperature 24
B1Unity-gain bandwidth
vs Supply voltage 25
vs Supply voltage 28
φ
m
Phase margin
yg
vs Temperature 29
φ
m
g
vs Load capacitance 30
V
n
Equivalent input noise voltage vs Frequency 31
Phase shift vs Frequency 26, 27
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Figure 2
50
40
20
10
0
30
–1 0 1
Percentage of Units – %
2345
DISTRIBUTION OF TLV2341
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
VDD = 3 V
TA = 25°C
P Package
–5 –4 –3 –2
Figure 3
50
40
20
10
0
30
–1 0 1602345
Percentage of Units – %
VIO – Input Offset Voltage – mV
DISTRIBUTION OF TLV2341
INPUT OFFSET VOLTAGE
VDD = 5 V
TA = 25°C
P Package
–5 –4 –3 –2
Figure 4
–10 0 2
Percentage of Units – %
46810
α
VIO
– Temperature Coefficient – µV/°C
50
40
20
10
0
30
VDD = 3 V
TA = 25°C to 85°C
P Package
DISTRIBUTION OF TLV2341
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
–8 –6 –4 –2
Figure 5
α
VIO
– Temperature Coefficient – µV/°C
Percentage of Units – %
–10 0246810
50
40
20
10
0
30
60
DISTRIBUTION OF TLV2341
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
VDD = 5 V
TA = 25°C to 85°C
P Package
Outliers:
(1) 20.5 mV/°C
–8 –6 –4 –2
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Figure 6
V0H – High-Level Output Voltage – V
V
OH
3
2
1
0
0 – 2– 4– 6
4
5
– 8
IOH – High-Level Output Current – mA
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
VIC = 1 V
VID = 100 mV
TA = 25°C
VDD = 3 V
VDD = 5 V
Figure 7
V0H – High-Level Output Voltage – V
V
OH
4
2
0
8
6
02468
HIGH-LEVEL OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
VIC = 1 V
VID = 100 mV
RL = 1 MΩ
TA = 25°C
Figure 8
1.8
1.2
0.6
0
2.4
3
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
– 75 – 50 – 25 0 25 50 75 100 125
TA – Free-Air Temperature – °C
V0H – High-Level Output Voltage – V
V
OH
VDD = 3 V
VIC = 1 V
VID = 100 mV
IOH = –500 µA
IOH = –1 mA
IOH = –2 mA
IOH = –3 mA
IOH = –4 mA
Figure 9
VOL – Low-Level Output V oltage – mV
V
OL
500
400
300
01 2
600
700
34
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
VIC – Common-Mode Input Voltage – V
VDD = 5 V
IOL = 5 mA
TA = 25°C
VID = –100 mV
VID = –1 V
600
650
550
450
350
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Figure 10
– 75 – 50 – 25 0 25 50 75 100 125
185
150
100
75
50
125
200
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
VOL – Low-Level Output V oltage – mV
V
OL
VDD = 3 V
VIC = 1 V
VID = –100 mV
IOL = 1 mA
Figure 11
400
200
100
0
0
600
700
800
500
300
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
VOL – Low-Level Output V oltage – mV
V
OL
VID – Differential Input Voltage – V
VDD = 5 V
VIC = |VID/2|
IOL = 5 mA
TA = 25°C
–1 –2 –3 –4 –5 –6 –7 –8
Figure 12
400
200
100
0
600
700
800
500
300
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
900
– 75 – 50 – 25 0 25 50 75 100 125
TA – Free-Air Temperature – °C
VOL – Low-Level Output V oltage – mV
V
OL
VDD = 5 V
VIC = 0.5 V
VID = –1 V
IOL = 5 mA
Figure 13
0.5
0.4
0.2
0.1
0
0.9
0.3
0123456
0.7
0.6
0.8
1
78
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
VOL – Low-Level Output Voltage – V
V
OL
IOL – Low-Level Output Current – mA
VIC = 1 V
VID = –100 mV
TA = 25°C
VDD = 3 V
VDD = 5 V
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Figure 14
02468
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
40
30
0
20
50
10
RL = 10 kΩ
TA = –40°C
TA = 25°C
TA = 85°C
60
– Large-Signal Differential Voltage
A
VD
Amplification – V/mV
Figure 15
TA – Free-Air Temperature – °C
20
15
35
30
45
50
10
40
25
5
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
–75 –50 –25 0 25 50 75 100 125
VDD = 3 V
RL = 10 kΩ
0
VDD = 5 V
– Large-Signal Differential Voltage
A
VD
Amplification – V/mV
Figure 16
INPUT BIAS CURRENT AND INPUT OFFSET
CURRENT
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
IIB and IIO – Input Bias and Offset Currents – pA
I
IB
I
IO
10
4
10
3
10
2
10
1
1
0.1
25 45 65 85 105 125
VDD = 3 V
VIC = 1 V
See Note A
I
IB
I
IO
35 55 75 95 115
NOTE: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
Figure 17
COMMON-MODE INPUT VOLTAGE
POSITIVE LIMIT
vs
SUPPLY VOLTAGE
4
2
0
8
6
02468
V
DD
– Supply Voltage – V
VIC – Common-Mode Input Voltage – V
IC
V
TA = 25°C
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Figure 18
1.2
0.8
0.4
0
0246
1.6
2
8
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
IDD – Supply Current – mA
DD
I
TA = 25°C
TA = –40°C
VIC = 1 V
VO = 1 V
No Load
TA = 85°C
Figure 19
IDD – Supply Current – mA
DD
I
1
0.5
0
–75 0 25 50
1.5
2
75 100 125
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
VIC = 1 V
VO = 1 V
No Load
VDD = 3 V
1.75
0.75
0.25
1.25
–50 –25
VDD = 5 V
Figure 20
02468
SLEW RATE
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
4
2
1
0
6
3
SR – Slew Rate – V/us
5
sµV/
8
7
V
I(PP)
= 1 V
AV = 1
RL = 10 kΩ
CL = 20 pF
TA = 25°C
Figure 21
4
2
1
0
6
3
5
8
7
–75 –50 –25 0 25 50 75 100 125
SLEW RATE
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
V
I(PP)
= 1 V
AV = 1
RL = 10 kΩ
CL = 20 pF
VDD = 5 V
VDD = 3 V
SR – Slew Rate – V/ussµV/
TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Figure 22
Bias Select Current – nA
– 1.2
024 6
– 3
8
– 2.4
– 1.8
– 0.6
VDD – Supply Voltage – V
BIAS SELECT CURRENT
vs
SUPPLY VOLTAGE
TA = 25°C
V
I(SEL)
= 0
Aµ
Figure 23
10 10 1000 10000
3
2
1
0
4
5
f – Frequency – kHz
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
RL = 10 kΩ
TA = –40°C
TA = 85°C
TA = 25°C
0
VDD = 3 V
VDD = 5 V
– Maximum Peak-to-Peak Output Voltage – V
V
O(PP)
Figure 24
–75 –50 –25 0 25 50 75 100 125
B1 – Unity-Gain Bandwidth – MHz
1.1
2.3
2.9
3.5
1.7
0.5
B
1
VDD = 3 V
VI = 10 mV
RL = 10 kΩ
CL = 20 pF
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
VDD = 5 V
Figure 25
1.3
0.9
0.7
0.5
1.7
1.9
1.5
1.1
2.1
012345678
V
I
= 10 mV
RL = 10 kΩ
CL = 20 pF
TA = 25°C
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
0.3
0.1
B1 – Unity-Gain Bandwidth – MHz
B
1
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