Texas Instruments TLV2341IPWR, TLV2341IPWLE, TLV2341IP, TLV2341IDR, TLV2341ID Datasheet

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

Wide Range of Supply Voltages Over
Specified Temperature Range:

T

A

= –40°C to 85°C...2 V to 8 V

D

Fully Characterized at 3 V and 5 V

D

Single-Supply Operation

D

Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
V

DD

–1 V at 25°C

D

Output Voltage Range Includes Negative
Rail

D

High Input Impedance...10

12

Ω Typ

D

Low Noise...25 nV/√Hz Typically at
f = 1 kHz (High-Bias Mode)

D

ESD-Protection Circuitry

D

Designed-In Latch-Up Immunity

D

Bias-Select Feature Enables Maximum
Supply Current Range From 17 µA to

1.5 mA at 25°C

1
2
3
4

8
7
6
5

OFFSET N1

IN–
IN+

GND

BIAS SELECT
V

DD

OUT
OFFSET N2

D OR P PACKAGE

(TOP VIEW)

1
2
3
4

8
7
6
5

OFFSET N1

IN–
IN+

GND

BIAS SELECT
V

DD

OUT
OFFSET N2

PW PACKAGE

(TOP VIEW)

description

The TLV2341 operational amplifier has been specifically developed for low-voltage, single-supply applications
and is fully specified to operate over a voltage range of 2 V to 8 V. The device uses the Texas Instruments
silicon-gate LinCMOS technology to facilitate low-power, low-voltage operation and excellent offset-voltage
stability . LinCMOS technology also enables extremely high input impedance and low bias currents allowing
direct interface to high-impedance sources.

The TLV2341 offers a bias-select feature, which allows the device to be programmed with a wide range of
different supply currents and therefore different levels of ac performance. The supply current can be set at
17 µA, 250 µA, or 1.5 mA, which results in slew-rate specifications between 0.02 and 2.1 V/ µ s (at 3 V).

The TLV2341 operational amplifiers are especially well suited to single-supply applications and are fully
specified and characterized at 3-V and 5-V power supplies. This low-voltage single-supply operation combined
with low power consumption makes this device a good choice for remote, inaccessible, or portable
battery-powered applications. The common-mode input range includes the negative rail.

The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV2341 incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883 C, Methods 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.

AVAILABLE OPTIONS

PACKAGED DEVICES

T

A

VIOmax
AT 25°C

SMALL

OUTLINE

(D)

PLASTIC

DIP

(P)

TSSOP

(PW)

CHIP

FORM

(Y)

–40°C to 85°C 8 mV TLV2341ID TLV2341IP TLV2341IPWLE TLV2341Y

The D package is available taped and reeled. Add R suffix to the device type (e.g., TL V2341IDR).
The PW package is only available left-end taped and reeled (e.g., TLV2341IPWLE).

Copyright  1994, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

LinCMOS is a trademark of Texas Instruments Incorporated.

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

bias-select feature

The TL V2342 offers a bias-select feature that allows the user to select any one of three bias levels, depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).

Table 1. Effect of Bias Selection on Performance

MODE

TYPICAL PARAMETER VALUES

TA = 25°C, VDD = 3 V

HIGH BIAS
RL = 10 kΩ

MEDIUM BIAS

RL = 100 kΩ

LOW BIAS
RL = 1 MΩ

UNIT

P

D

Power dissipation 975 195 15 µW
SR Slew rate 2.1 0.38 0.02 V/µs
V

n

Equivalent input noise voltage at f = 1 kHz 25 32 68 nV/√Hz
B

1

Unity-gain bandwidth 790 300 27 kHz

φ

m

Phase margin 46° 39° 34°
A

VD

Large-signal differential voltage amplification 11 83 400 V/mV

bias selection

Bias selection is achieved by connecting BIAS SELECT to one of three voltage levels (see Figure 1). For
medium-bias applications, it is recommended that the bias-select pin be connected to the midpoint between the
supply rails. This procedure is simple in split-supply applications since this point is ground. In single-supply
applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of
large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,
large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to
the supply midpoint after the supply is switched on. A voltage other than the midpoint may be used if it is within
the voltages specified in the following table.

To the Bias-Select Pin

1 MΩ

High

Medium

Low

V

DD

1 MΩ

0.01 µF

BIAS MODE

BIAS-SELECT VOLTAGE

(single supply)

Low

Medium

High

V

DD

1 V to VDD –1 V

GND

Figure 1. Bias Selection for Single-Supply Applications

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

high-bias mode

In the high-bias mode, the TL V2341 series feature low offset voltage drift, high input impedance, and low noise.
Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation.

medium-bias mode

The TL V2341 in the medium-bias mode features a low offset voltage drift, high input impedance, and low noise.
Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that
consumed by bipolar devices.

low-bias mode

In the low-bias mode, the TL V2341 features low offset voltage drift, high input impedance, extremely low power
consumption, and high differential voltage gain.

ORDER OF CONTENTS

TOPIC

BIAS MODE

Schematic all
Absolute maximum ratings all
Recommended operating conditions all
Electrical characteristics

Operating characteristics
Typical characteristics

high

(Figures 2 – 31)

Electrical characteristics
Operating characteristics
Typical characteristics

medium

(Figures 32 – 61)

Electrical characteristics
Operating characteristics
Typical characteristics

low

(Figures 62 – 91)

Parameter measurement information all
Application information all

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2341Y chip information

This chip, when properly assembled, displays characteristics similar to the TL V2341. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.

+

–

OUT

IN+

IN–

V

DD

(7)

(3)

(2)

(6)

(4)

GND

(1)

(5)

OFFSET N1

OFFSET N2

(8)

BIAS SELECT

48

55

(8) (7)(2) (1)

(6)(5)(4)

(3)

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994



POST OFFICE BOX 655303 DALLAS, TEXAS 75265

• 5

equivalent schematic

P3

P1

R1

P2 R2

P4 P5

R6

P9B

P9A

P6A P6B P7B P7A P8

P10

N11

N12

N13

N10

N9

N7

R7R4R3

N1 N2

N3

R5

C1

D1 D2

N6

N4

V

DD

OFFSETN1OFFSET

N2

OUT GND BIAS

SELECT

IN–

IN+

P11

P12

N5

COMPONENT COUNT

†

Transistors
Diodes
Resistors
Capacitors

27

2
7
1

†

Includes the amplifier and all
ESD, bias, and trim circuitry

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

6

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

†

Supply voltage, V

DD

(see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Differential input voltage (see Note 2) V

DD±

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, V

I

(any input) –0.3 V to V

DD

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input current, I

I

±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, I

O

±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duration of short-circuit current at (or below) T

A

= 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T

A

–40°C to 85° C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any conditions beyond those indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may effect device reliability .

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2. Differential voltages are at the noninverting input with respect to the inverting input.

3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).

DISSIPATION RATING TABLE

T

≤ 25°C DERATING FACTOR T

= 85°C

PACKAGE

A

POWER RATING ABOVE TA = 25°C

A

POWER RATING

D 725 mW 5.8 mW/°C 377 mW
P 1000 mW 8.0 mW/°C 520 mW

PW 525 mW 4.2 mW/° C 273 mW

recommended operating conditions

MIN MAX UNIT

Supply voltage, V

DD

2 8 V

p

VDD = 3 V –0.2 1.8

Common-mode input voltage, V

IC

VDD = 5 V –0.2 3.8

V

Operating free-air temperature, T

A

–40 85 °C

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

7

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

electrical characteristics at specified free-air temperature

TLV2341I

PARAMETER

TEST

T

A

†

VDD = 3 V VDD = 5 V

UNIT

CONDITIONS

MIN TYP MAX MIN TYP MAX

p

VO = 1 V,
V

= 1 V,

25°C 0.6 8 1.1 8

VIOInput offset voltage

IC

,

RS = 50 Ω,
RL = 10 kΩ

Full range 10 10

mV

Average temperature of input 25°C to

°

α

VIO

g

offset voltage 85°C

2.7

2.7µV/°C

p

V

= 1 V,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

O

,

VIC = 1 V

85°C 22 1000 24 1000

pA

p

V

= 1 V,

25°C 0.6 0.6

p

IIBInput bias current (see Note 4)

O

,

VIC = 1 V

85°C 175 2000 200 2000

pA

°

–0.2

–0.3

–0.2

–0.3

Common-mode input voltage range

25°C

t

o
2

t

o

2.3

t

o
4

t

o

4.2

V

V

ICR

gg

(see Note 5)

–0.2

–0.2

Full range

t

o

1.8

t

o

3.8

V

p

VIC = 1 V,

25°C 1.75 1.9 3.2 3.7

VOHHigh-level output voltage

V

ID

=

100 mV

,

IOH = –1 mA

Full range 1.7 3

V

p

VIC = 1 V,

25°C 120 150 90 150

VOLLow-level output voltage

V

ID

= –

100 mV

,

IOL = 1 mA

Full range 190 190

mV

Large-signal differential

VIC = 1 V,

25°C 3 11 5 23

A

VD

gg

voltage amplification

R

L

= 10 kΩ,

See Note 6

Full range 2 3.5

V/mV

VO = 1 V,

25°C 65 78 65 80

CMRR

Common-mode rejection ratio

V

IC

=

V

ICR

m

i

n,

RS = 50 Ω

Full range 60 60

dB

Supply-voltage rejection ratio

VIC = 1 V,

25°C 70 95 70 95

k

SVR

ygj

(∆VDD/∆VIO)

V

O

= 1 V,

RS = 50 Ω

Full range 65 65

dB

I

I(SEL)

Bias select current V

I(SEL) = 0

25°C –1.2 –1.4 µA

pp

VO = 1 V,

25°C 325 1500 675 1600

IDDSupply current

V

IC

= 1 V,

No load

Full range 2000 2200

µ

A

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

8

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 3 V

TLV2341I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

VIC = 1 V,

V

I(PP)

= 1 V,

p

25°C 2.1

SR

Slew rate at unity gain

R

L

=

10 kΩ

,

See Figure 92

C

L

=

20 pF

,

85°C

1.7

V/µs

p

f = kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 93

S

,

25°C

25

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 170

BOMMaximum output-swing bandwidth

OOH

,

RL = 10 kΩ,

L

,

See Figure 92

85°C

145

kH

z

V

= 10 mV, C

= 20 pF,

25°C 790

B1Unity-gain bandwidth

I

,

RL = 10 kΩ,

L

,

See Figure 94

85°C 690

kH

z

V

= 10 mV

,

f = B

,

–40°C 53°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 1 MΩ,

25°C

49°

See Figure 94

85°C 47°

operating characteristics at specified free-air temperature, VDD = 5 V

TLV2341I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 3.6

V

IC

= 1 V,

RL = 10 kΩ,

V

I(PP)

= 1

V

85°C 2.8

SR

Slew rate at unity gain

L

,

CL = 20 pF,

25°C 2.9

V/µs

See Figure 92

V

I(PP)

= 2.5

V

85°C 2.3

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 93

S

,

25°C

25

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 320

BOMMaximum output-swing bandwidth

OOH

,

RL = 10 kΩ,

L

,

See Figure 92

85°C

250

kH

z

V

= 10 mV, C

= 20 pF,

25°C 1.7

B1Unity-gain bandwidth

I

,

RL = 10 kΩ,

L

,

See Figure 94

85°C

1.2

MH

z

V

= 10 mV

,

f = B

,

–40°C 49°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 10 kΩ,

25°C

46°

See Figure 94

85°C 43°

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

9

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

HIGH-BIAS MODE

electrical characteristics, T

A

= 25°C

TLV2341I

PARAMETER TEST CONDITIONS

VDD = 3 V VDD = 5 V

UNIT

MIN TYP MAX MIN TYP MAX

V

IO

Input offset voltage

VO = 1 V,
RS = 50 Ω,

VIC = 1 V,
RL = 10 kΩ

0.6 8 1.1 8 mV

I

IO

Input offset current (see Note 4) VO = 1 V, VIC = 1 V 0.1 0.1 pA

I

IB

Input bias current (see Note 4) VO = 1 V, VIC = 1 V 0.6 0.6 pA

–0.2 –0.3 –0.2 –0.3

V

ICR

C

ommon-mode input voltage

to to to to

V

ICR

range (see Note 5)

2 2.3 4 4.2

p

VIC = 1 V,

VID = 100 mV ,

VOHHigh-level output voltage

I

OH

= –

1

mA

1.75

1.9

3.2

3.7

V

p

V

= 1 V, V

= –100 mV,

VOLLow-level output voltage

IC

,

IOL = 1 mA

ID

,

120

15090150

mV

A

VD

Large-signal differential voltage
amplification

VIC = 1 V,
See Note 6

RL = 10 kΩ,

3 11 50 23 V/mV

V

= 1 V, V

= V

min,

CMRR

Common-mode rejection ratio

O

,

RS = 50 Ω

IC ICR

,

65786580dB

Supply-voltage rejection ratio V

= 1 V, V

= 1 V,

k

SVR

ygj

(∆VDD/∆VIO)

O

,

RS = 50 Ω

IC

,

70957095dB

I

I(SEL)

Bias select current V

I(SEL)

= 0 –1.2 –1.4 µA

pp

VO = 1 V, VIC = 1 V,

IDDSupply current

O

No load

IC

325

1500

675

1600µA

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

10

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Table of Graphs

FIGURE

V

IO

Input offset voltage Distribution 2,3

α

VIO

Input offset voltage temperature coefficient Distribution 4,5

vs Output current 6

V

OH

High-level output voltage

vs Supply voltage

7

OH

gg

g

vs Temperature 8
vs Common-mode input voltage 9

p

vs Common mode in ut voltage

vs Temperature

9

10, 12

VOLLow-level output voltage

vs Differential input voltage

,

11

vs Low-level output current 13
vs Supply voltage 14

A

VD

Large-signal differential voltage amplification

yg

vs Temperature 15

VD

gg g

vs Frequency 26, 27

I

IB

Input bias current vs Temperature 16

I

IO

Input offset current vs Temperature 16

V

IC

Common-mode input voltage vs Supply voltage 17

pp

vs Supply voltage 18

IDDSupply current

yg

vs Temperature 19
vs Supply voltage 20

SR

Slew rate

yg

vs Temperature 21

Bias select current vs Supply voltage 22

V

O(PP)

Maximum peak-to-peak output voltage vs Frequency 23

vs Temperature 24

B1Unity-gain bandwidth

vs Supply voltage 25
vs Supply voltage 28

φ

m

Phase margin

yg

vs Temperature 29

φ

m

g

vs Load capacitance 30

V

n

Equivalent input noise voltage vs Frequency 31
Phase shift vs Frequency 26, 27

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

11

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Figure 2

50

40

20

10

0

30

–1 0 1

Percentage of Units – %

2345

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

VIO – Input Offset Voltage – mV

VDD = 3 V
TA = 25°C
P Package

–5 –4 –3 –2

Figure 3

50

40

20

10

0

30

–1 0 1602345

Percentage of Units – %

VIO – Input Offset Voltage – mV

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

VDD = 5 V
TA = 25°C
P Package

–5 –4 –3 –2

Figure 4

–10 0 2

Percentage of Units – %

46810

α

VIO

– Temperature Coefficient – µV/°C

50

40

20

10

0

30

VDD = 3 V
TA = 25°C to 85°C
P Package

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

–8 –6 –4 –2

Figure 5

α

VIO

– Temperature Coefficient – µV/°C

Percentage of Units – %

–10 0246810

50

40

20

10

0

30

60

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

VDD = 5 V
TA = 25°C to 85°C
P Package
Outliers:
(1) 20.5 mV/°C

–8 –6 –4 –2

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Figure 6

V0H – High-Level Output Voltage – V

V

OH

3

2

1

0

0 – 2– 4– 6

4

5

– 8

IOH – High-Level Output Current – mA

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

VIC = 1 V
VID = 100 mV
TA = 25°C

VDD = 3 V

VDD = 5 V

Figure 7

V0H – High-Level Output Voltage – V

V

OH

4

2

0

8

6

02468

HIGH-LEVEL OUTPUT VOLTAGE

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

VIC = 1 V
VID = 100 mV
RL = 1 MΩ
TA = 25°C

Figure 8

1.8

1.2

0.6

0

2.4

3

HIGH-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

– 75 – 50 – 25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

V0H – High-Level Output Voltage – V

V

OH

VDD = 3 V
VIC = 1 V
VID = 100 mV

IOH = –500 µA
IOH = –1 mA
IOH = –2 mA
IOH = –3 mA
IOH = –4 mA

Figure 9

VOL – Low-Level Output V oltage – mV

V

OL

500

400

300

01 2

600

700

34

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

VIC – Common-Mode Input Voltage – V

VDD = 5 V
IOL = 5 mA
TA = 25°C

VID = –100 mV

VID = –1 V

600

650

550

450

350

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

13

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Figure 10

– 75 – 50 – 25 0 25 50 75 100 125

185

150

100

75

50

125

200

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 3 V
VIC = 1 V
VID = –100 mV
IOL = 1 mA

Figure 11

400

200

100

0

0

600

700

800

500

300

LOW-LEVEL OUTPUT VOLTAGE

vs

DIFFERENTIAL INPUT VOLTAGE

VOL – Low-Level Output V oltage – mV

V

OL

VID – Differential Input Voltage – V

VDD = 5 V
VIC = |VID/2|
IOL = 5 mA
TA = 25°C

–1 –2 –3 –4 –5 –6 –7 –8

Figure 12

400

200

100

0

600

700

800

500

300

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

900

– 75 – 50 – 25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 5 V
VIC = 0.5 V
VID = –1 V
IOL = 5 mA

Figure 13

0.5

0.4

0.2

0.1
0

0.9

0.3

0123456

0.7

0.6

0.8

1

78

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

VOL – Low-Level Output Voltage – V

V

OL

IOL – Low-Level Output Current – mA

VIC = 1 V
VID = –100 mV
TA = 25°C

VDD = 3 V

VDD = 5 V

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

14

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Figure 14

02468

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

40

30

0

20

50

10

RL = 10 kΩ

TA = –40°C

TA = 25°C

TA = 85°C

60

– Large-Signal Differential Voltage
A

VD

Amplification – V/mV

Figure 15

TA – Free-Air Temperature – °C

20
15

35

30

45

50

10

40

25

5

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

FREE-AIR TEMPERATURE

–75 –50 –25 0 25 50 75 100 125

VDD = 3 V

RL = 10 kΩ

0

VDD = 5 V

– Large-Signal Differential Voltage
A

VD

Amplification – V/mV

Figure 16

INPUT BIAS CURRENT AND INPUT OFFSET

CURRENT

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

IIB and IIO – Input Bias and Offset Currents – pA

I

IB

I

IO

10

4

10

3

10

2

10

1

1

0.1
25 45 65 85 105 125

VDD = 3 V
VIC = 1 V
See Note A

I

IB

I

IO

35 55 75 95 115

NOTE: The typical values of input bias current and input offset

current below 5 pA were determined mathematically.

Figure 17

COMMON-MODE INPUT VOLTAGE

POSITIVE LIMIT

vs

SUPPLY VOLTAGE

4

2

0

8

6

02468

V

DD

– Supply Voltage – V

VIC – Common-Mode Input Voltage – V

IC

V

TA = 25°C

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

15

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Figure 18

1.2

0.8

0.4

0

0246

1.6

2

8

SUPPLY CURRENT

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

IDD – Supply Current – mA

DD

I

TA = 25°C

TA = –40°C

VIC = 1 V
VO = 1 V
No Load

TA = 85°C

Figure 19

IDD – Supply Current – mA

DD

I

1

0.5

0

–75 0 25 50

1.5

2

75 100 125

SUPPLY CURRENT

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

VIC = 1 V
VO = 1 V
No Load

VDD = 3 V

1.75

0.75

0.25

1.25

–50 –25

VDD = 5 V

Figure 20

02468

SLEW RATE

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

4

2

1

0

6

3

SR – Slew Rate – V/us

5

sµV/

8

7

V

I(PP)

= 1 V
AV = 1
RL = 10 kΩ
CL = 20 pF
TA = 25°C

Figure 21

4

2

1

0

6

3

5

8

7

–75 –50 –25 0 25 50 75 100 125

SLEW RATE

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

V

I(PP)

= 1 V
AV = 1
RL = 10 kΩ
CL = 20 pF

VDD = 5 V

VDD = 3 V

SR – Slew Rate – V/ussµV/

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

16

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Figure 22

Bias Select Current – nA

– 1.2

024 6

– 3

8

– 2.4

– 1.8

– 0.6

VDD – Supply Voltage – V

BIAS SELECT CURRENT

vs

SUPPLY VOLTAGE

TA = 25°C
V

I(SEL)

= 0

Aµ

Figure 23

10 10 1000 10000

3

2

1

0

4

5

f – Frequency – kHz

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

vs

FREQUENCY

RL = 10 kΩ

TA = –40°C

TA = 85°C

TA = 25°C

0

VDD = 3 V

VDD = 5 V

– Maximum Peak-to-Peak Output Voltage – V

V

O(PP)

Figure 24

–75 –50 –25 0 25 50 75 100 125

B1 – Unity-Gain Bandwidth – MHz

1.1

2.3

2.9

3.5

1.7

0.5

B

1

VDD = 3 V

VI = 10 mV
RL = 10 kΩ
CL = 20 pF

UNITY-GAIN BANDWIDTH

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

VDD = 5 V

Figure 25

1.3

0.9

0.7

0.5

1.7

1.9

1.5

1.1

2.1

012345678

V

I

= 10 mV
RL = 10 kΩ
CL = 20 pF
TA = 25°C

UNITY-GAIN BANDWIDTH

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

0.3

0.1

B1 – Unity-Gain Bandwidth – MHz

B

1

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

17

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

10 100 1 K 10 K 100 K 1 M

f – Frequency – Hz

10 M

Phase Shift

–60°

–30°

0°

30°

60°

90°

120°

150°

180°

10

7

10

6

10

5

10

4

10

3

10

2

10

1

0.1

VDD = 3 V
RL = 10 kΩ
CL = 20 pF
TA = 25°C

A

VD

Phase Shift

1

– Large-Signal Differential Voltage Amplification
A

VD

Figure 26

10

7

10

6

10

5

10

4

10

3

10

2

10

1

1

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

10 100 1 k 10 k 100 k 1 M 10 M

f – Frequency – Hz

Phase Shift

–60°

–30°

0°

30°

60°

90°

120°

150°

180°

A

VD

Phase Shift

0.1

VDD = 5 V
RL = 10 kΩ
CL = 20 pF
TA = 25°C

– Large-Signal Differential Voltage Amplification
A

VD

Figure 27

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

18

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)

Figure 28

024 68

om – Phase Margin

PHASE MARGIN

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

φ

m

VI = 10 mV
RL = 10 kΩ
CL = 20 pF
TA = 25°C

53°

51°

49°

47°

45°

Figure 29

PHASE MARGIN

vs

FREE-AIR TEMPERATURE

–75 –50 –25 –0 25 50 75 100 125

TA – Free-Air Temperature – °C

VI = 10 mV
RL = 10 kΩ
CL = 20 pF

om – Phase Margin

φ

m

60°
58°

56°
54°

52°
50°

48°
46°

44°
42°

40°

VDD = 5 V

VDD = 3 V

Figure 30

020406080100

PHASE MARGIN

vs

LOAD CAPACITANCE

om – Phase Margin

φ

m

CL – Load Capacitance – pF

VDD = 5 V

VI = 10 mV
RL = 10 kΩ
TA = 25°C

50°

45°

40°

35°

30°

25°

10 30 50 70 90

VDD = 3 V

Figure 31

f – Frequency – Hz

EQUIVALENT INPUT NOISE VOLTAGE

vs

FREQUENCY

1 10 100 1000

Vn – Equivalent Input Noise Voltage – nV Hz

V

n

nV/ Hz

200

100

0

300

400

RS = 20 Ω
TA = 25°C

VDD = 5 V

VDD = 3 V

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

19

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

electrical characteristics at specified free-air temperature

TLV2341I

PARAMETER

TEST

T

A

†

VDD = 3 V VDD = 5 V

UNIT

CONDITIONS

MIN TYP MAX MIN TYP MAX

VO = 1 V,
V

= 1 V

,

25°C 0.6 8 1.1 8

V

IO

Input offset voltage

V

IC

1

V,

RS = 50 Ω,

mV

S

RL = 100 kΩ

Full range

10

10

Average temperature coefficient of 25°C to

°

α

VIO

g

input offset voltage 85°C

1

1.7µV/°C

p

V

= 1 V,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

O

,

VIC = 1 V

85°C 22 1000 24 1000

pA

p

V

= 1 V,

25°C 0.6 0.6

p

IIBInput bias current (see Note 4)

O

,

VIC = 1 V

85°C 175 2000 200 2000

pA

°

–0.2

–0.3

–0.2

–0.3

Common-mode input voltage range

25°C

to2to

2.3

to4to

4.2

V

V

ICR

gg

(see Note 5)

–0.2

–0.2

Full range

to

1.8

to

3.8

V

p

VIC = 1 V,

25°C 1.75 1.9 3.2 3.9

VOHHigh-level output voltage

V

ID

=

100 mV

,

IOH = –1 mA

Full range 1.7 3

V

p

VIC = 1 V,

25°C 115 150 95 150

VOLLow-level output voltage

V

ID

= –

100 mV

,

IOL = 1 mA

Full range 190 190

mV

Large-signal differential

VIC = 1 V,

25°C 25 83 25 170

A

VD

gg

voltage amplification

R

L

=

100 kΩ

,

See Note 6

Full range 15 15

V/mV

VO = 1 V,

25°C 65 92 65 91

CMRR

Common-mode rejection ratio

V

IC

=

V

ICR

min

,

RS = 50 Ω

Full range 60 60

dB

Supply-voltage rejection ratio

VIC = 1 V,

25°C 70 94 70 94

k

SVR

ygj

(∆VDD/∆VIO)

V

O

= 1 V,

RS = 50 Ω

Full range 65 65

dB

I

I(SEL)

Bias select current V

I(SEL) = 0

25°C –100 –130 nA

pp

VO = 1 V,

25°C 65 250 105 280

IDDSupply current

V

IC

= 1 V,

No load

Full range 360 400

µ

A

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

20

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 3 V

TLV2341I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

VIC = 1 V,

V

I(PP)

= 1 V,

p

25°C 0.38

SR

Slew rate at unity gain

R

L

=

100 kΩ

,

See Figure 92

C

L

=

20 pF

,

85°C

0.29

V/µs

p

f = kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 93

S

,

25°C

32

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 34

BOMMaximum output-swing bandwidth

OOH

,

RL = 100 kΩ,

L

,

See Figure 92

85°C

32

kH

z

V

= 10 mV, C

= 20 pF,

25°C 300

B1Unity-gain bandwidth

I

,

RL = 100 kΩ,

L

,

See Figure 94

85°C 235

kH

z

V

= 10 mV

,

f = B

,

–40°C 42°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 100 kΩ,

25°C

39°

See Figure 94

85°C 36°

operating characteristics at specified free-air temperature, VDD = 5 V

TLV2341I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 0.43

V

IC

= 1 V,

RL = 100 kΩ,

V

I(PP)

= 1

V

85°C 0.35

SR

Slew rate at unity gain

L

,

CL = 20 pF,

25°C 0.40

V/µs

See Figure 92

V

I(PP)

= 2.5

V

85°C 0.32

p

f =1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 93

S

,

25°C

32

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 55

BOMMaximum output-swing bandwidth

OOH

,

RL = 100 kΩ,

L

,

See Figure 92

85°C

45

kH

z

V

= 10 mV, C

= 20 pF,

25°C 525

B1Unity-gain bandwidth

I

,

RL = 100 kΩ,

L

,

See Figure 94

85°C

370

kH

z

V

= 10 mV

,

f = B

,

–40°C 43°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 100 kΩ,

25°C

40°

See Figure 94

85°C 38°

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

21

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

electrical characteristics, T

A

= 25°C

TLV2341I

PARAMETER TEST CONDITIONS

VDD = 3 V VDD = 5 V

UNIT

MIN TYP MAX MIN TYP MAX

V

IO

Input offset voltage

VO = 1 V,
RS = 50 Ω,

VIC = 1 V,
RL = 100 kΩ

0.6 8 1.1 8 mV

I

IO

Input offset current (see Note 4) VO = 1 V, VIC = 1 V 0.1 0.1 pA

I

IB

Input bias current (see Note 4) VO = 1 V, VIC = 1 V 0.6 0.6 pA

Common-mode input voltage

–0.2

–0.3

–0.2

–0.3

V

ICR

g

range (see Note 5)

to2to

2.3

to4to

4.2

V

p

V

= 1 V, V

= 100 mV ,

VOHHigh-level output voltage

IC

,

IOH = –1 mA

ID

,

1.75

1.9

3.2

3.9

V

p

V

= 1 V, V

= –100 mV,

VOLLow-level output voltage

IC

,

IOL = 1 mA

ID

,

115

15095150

mV

A

VD

Large-signal differential voltage
amplification

VIC = 1 V,
See Note 6

RL = 100 kΩ,

25 83 25 170 V/mV

V

= 1 V, V

= V

min,

CMRR

Common-mode rejection ratio

O

,

RS = 50 Ω

IC ICR

,

65926591dB

Supply-voltage rejection ratio V

= 1 V, V

= 1 V,

k

SVR

ygj

(∆VDD/∆VID)

O

,

RS = 50 Ω

IC

,

70947094dB

I

I(SEL)

Bias select current V

I(SEL)

= 0 –100 –130 nA

pp

VO = 1 V, VIC = 1 V,

IDDSupply current

O

No load

IC

65

250

105

280µA

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

22

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Table of Graphs

FIGURE

V

IO

Input offset voltage Distribution 32, 33

α

VIO

Input offset voltage temperature coefficient Distribution 34, 35

vs Output current 36

V

OH

High-level output voltage

vs Supply voltage

37

OH

gg

g

vs Temperature 38
vs Common-mode input voltage 39

p

vs Common mode in ut voltage

vs Temperature

39

40, 42

VOLLow-level output voltage

vs Differential input voltage

,

41

vs Low-level output current 43
vs Supply voltage 44

A

VD

Large-signal differential voltage amplification

yg

vs Temperature 45

VD

gg g

vs Frequency 56, 57

I

IB

Input bias current vs Temperature 46

I

IO

Input offset current vs Temperature 46

V

IC

Common-mode input voltage vs Supply voltage 47

pp

vs Supply voltage 48

IDDSupply current

yg

vs Temperature 49
vs Supply voltage 50

SR

Slew rate

yg

vs Temperature 51

Bias select current vs Supply current 52

V

O(PP)

Maximum peak-to-peak output voltage vs Frequency 53

vs Temperature 54

B1Unity-gain bandwidth

vs Supply voltage 55
vs Supply voltage 58

φ

m

Phase margin

yg

vs Temperature 59

φ

m

g

vs Load capacitance 60

V

n

Equivalent input noise voltage vs Frequency 61
Phase shift vs Frequency 56, 57

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

23

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Figure 32

50

40

20

10

0

30

–1 0 1

Percentage of Units – %

2345

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

VIO – Input Offset Voltage – mV

VDD = 3 V
TA = 25°C
P Package

–5 –4 –3 –2

Figure 33

50

40

20

10

0

30

–1 0 1602345

Percentage of Units – %

VIO – Input Offset Voltage – mV

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

VDD = 5 V
TA = 25°C
P Package

–5 –4 –3 –2

Figure 34

–10 0 2

Percentage of Units – %

46810

α

VIO

– Temperature Coefficient – µV/°C

50

40

20

10

0

30

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

–8 –6 –4 –2

VDD = 3 V
TA = 25°C to 85°C
P Package

Figure 35

α

VIO

– Temperature Coefficient – µV/°C

Percentage of Units – %

–10 0246810

50

40

20

10

0

30

60

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

VDD = 5 V
TA = 25°C to 85°C
P Package
Outliers:
(1) 33 mV/°C

–8 –6 –4 –2

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

24

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Figure 36

V0H – High-Level Output Voltage – V

V

OH

3

2

1

0

0

4

5

IOH – High-Level Output Current – mA

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

VDD = 3 V

VDD = 5 V

VIC = 1 V
VID = 100 mV
TA = 25°C

–2 –4 –6 –8

Figure 37

V0H – High-Level Output Voltage – V

V

OH

4

2

0

8

6

02468

HIGH-LEVEL OUTPUT VOLTAGE

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

VIC = 1 V
VID = 100 mV
RL = 100 kΩ
TA = 25°C

Figure 38

1.8

1.2

0.6

0

2.4

3

HIGH-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

–75 –50 –25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

VDD = 3 V
VIC = 1 V
VID = 100 mV

V0H – High-Level Output Voltage – V

V

OH

IOH = –500 µA
IOH = –1 mA
IOH = –2 mA
IOH = –3 mA
IOH = –4 mA

Figure 39

VOL – Low-Level Output V oltage – mV

V

OL

500

400

300

01 2

600

700

34

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

VIC – Common-Mode Input Voltage – V

VDD = 5 V
IOL = 5 mA
TA = 25°C

VID = –100 mV

VID = –1 V

650

550

450

350

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

25

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Figure 40

–75 –50 –25 0 25 50 75 100 125

125

110

80
65
50

185

95

155

140

170

200

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 3 V
VIC = 1 V
VID = –100 mV
IOL = 1 mA

Figure 41

400

200

100

0

0–2–4

600

700

800

–6 –8

500

300

LOW-LEVEL OUTPUT VOLTAGE

vs

DIFFERENTIAL INPUT VOLTAGE

VOL – Low-Level Output V oltage – mV

V

OL

VID – Differential Input Voltage – V

VDD = 5 V
VIC = |VID/2|
IOL = 5 mA
TA = 25°C

Figure 42

400

200

100

0

600

700

800

500

300

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

900

–75 –50 –25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 5 V
VIC = 0.5 V
VID = –1 V
IOL = 5 mA

Figure 43

500

400

200
100

0

900

300

0123456

700

600

800

1000

78

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

VOL – Low-Level Output V oltage – mV

V

OL

IOL – Low-Level Output Current – mA

VDD = 5 V

VIC = 1 V
VID = –100 mV
TA = 25°C

VDD = 3 V

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

26

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Figure 44

02468

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

200
150

350

0

300

450

500

100

400

250

50

RL = 100 kΩ

TA = –40°C

TA = 25°C

TA = 85°C

– Large-Signal Differential Voltage
A

VD

Amplification – V/mV

Figure 45

200
150

350

300

450

500

100

400

250

50

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

FREE-AIR TEMPERATURE

–75 –50 –25 0 25 50 75 100 125

VDD = 5 V

VDD = 3 V

RL = 100 kΩ

0

TA – Free-Air Temperature – °C

– Large-Signal Differential Voltage
A

VD

Amplification – V/mV

Figure 46

INPUT BIAS CURRENT AND INPUT OFFSET CURREN

T

vs

FREE-AIR TEMPERATURE

TA – Free-sAir Temperature – °C

IIB and IIO – Input Bias and Offset Currents – pA

I

IB

I

IO

10

4

10

3

10

2

10

1

1

.01

25 45 65 85 105 125

VDD = 3 V
VIC = 1 V
See Note A

I

IB

I

IO

NOTE A: The typical values of input bias current and input offset

current below 5 pA are determined mathematically.

Figure 47

COMMON-MODE INPUT VOLTAGE POSITIVE LIMIT

vs

SUPPLY VOLTAGE

4

2

0

8

6

02468

V

DD

– Supply Voltage – V

VIC – Common-Mode Input Voltage

IC

V

TA = 25°C

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

27

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Figure 48

IDD – Supply Current – uA

100

50

25

0

02 4

150

175

200

68

125

75

VDD – Supply Voltage – V

DD

I

Aµ

250

SUPPLY CURRENT

vs

SUPPLY VOLTAGE

VIC = 1 V
VO = 1 V
No Load

TA = –40°C

TA = 25°C

TA = 85°C

Figure 49

75

50

25

0
–75 –50 –25 0 25 50

100

125

150

75 100 125

TA – Free-Air Temperature – °C

175

SUPPLY CURRENT

vs

FREE-AIR TEMPERATURE

VIC = 1 V
VO = 1 V
No Load

VDD = 5 V

VDD = 3 V

IDD – Supply Current – uA

DD

I

Aµ

Figure 50

02468

0.7

0.5

0.4

0.3

0.9

0.6

SR – Slew Rate – V/us

0.8

sµV/

VIC = 1 V
V

I(PP)

= 1 V
AV = 1
RL = 100 kΩ
CL = 20 pF
TA = 25°C

VDD – Supply Voltage – V

SLEW RATE

vs

SUPPLY VOLTAGE

Figure 51

0.7

0.5

0.4

0.3

0.9

0.6

0.8

–75 –50 –25 0 25 50 75 100 125

VDD = 5 V

VDD = 3 V

VIC = 1 V
V

I(PP)

= 1 V
AV = 1
RL = 100 kΩ
CL = 20 pF

0.2

TA – Free-Air Temperature – °C

SLEW RATE

vs

FREE-AIR TEMPERATURE

SR – Slew Rate – V/us

sµV/

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

28

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Figure 52

VDD – Supply Voltage – V

– 150

– 120

– 30

0

024 6

Bias Select Current – nA

BIAS SELECT CURRENT

vs

SUPPLY VOLTAGE

8

– 90

– 180

– 60

TA = 25°C
V

I(SEL)

= 1/2 V

DD

– 300
– 270
– 240

– 210

Figure 53

10 10 100 1000

3

2

1

0

4

5

f – Frequency – kHz

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

vs

FREQUENCY

RL = 100 kΩ

TA = –40°C

VDD = 3 V

TA = 85°C

TA = 25°C

VDD = 5 V

– Maximum Peak-to-Peak Output Voltage – V

V

O(PP)

Figure 54

–75 –50 –25 0 25 50 75 100

600

400

300

200

800

900

1000

700

500

VDD = 5 V

VDD = 3 V

VI = 10 mV
RL = 100 kΩ
CL = 20 pF

UNITY-GAIN BANDWIDTH

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

B1 – Unity-Gain Bandwidth – kHz

B

1

125

Figure 55

B1 – Unity-Gain Bandwidth – kHz

B

1

600

400

300

200

800

900

700

500

1000

012345678

V

I

= 10 mV
RL = 100 kΩ
CL = 20 pF
TA = 25°C

UNITY-GAIN BANDWIDTH

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

29

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

10

7

10

6

10

5

10

4

10

3

10

2

10

1

1

0.1
1 10 100 1 k 10 k 100 k

f – Frequency – Hz

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

1 M

Phase Shift

60°

30°

90°

120°

150°

180°

Phase Shift

A

VD

VDD = 3 V
RL = 100 kΩ
CL = 20 pF
TA = 25°C

–60°

–30°

– Large-Signal Differential Voltage Amplification

A

VD

0°

Figure 56

1 10 100 1 k 10 k 100 k 1 M

10

7

10

6

10

5

10

4

10

3

10

2

10

1

0.1

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

f – Frequency – Hz

Phase Shift

VDD = 5 V
RL = 100 kΩ
CL = 20 pF
TA = 25°C

1

60°

30°

90°

–60°

–30°

0°

120°

150°

180°

Phase Shift

A

VD

– Large-Signal Differential Voltage Amplification
A

VD

Figure 57

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

30

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)

Figure 58

VDD – Supply Voltage – V

01234 56

PHASE MARGIN

vs

SUPPLY VOLTAGE

78

V

I

= 10 mV
RL = 100 kΩ
CL = 20 pF
TA = 25°C

om – Phase Margin

φ

m

50°
48°

46°

44°
42°
40°
38°

36°

34°
32°

30°

Figure 59

TA – Free-Air Temperature – °C

– 75 – 25 0 50 100 125– 50 25 75

VDD = 3 V

VI = 10 mV
RL = 100 kΩ
CL = 20 pF

VDD = 5 V

PHASE MARGIN

vs

FREE-AIR TEMPERATURE

om – Phase Margin

φ

m

45°

43°

41°

39°

37°

35°

Figure 60

om – Phase Margin

φ

m

44°

42°

40°

38°

36°

34°

32°

30°

0204060

PHASE MARGIN

vs

LOAD CAPACITANCE

80 100

VI = 10 mV
TA = 25°C
RL = 100 kΩ

VDD = 3 V

VDD = 5 V

CL – Load Capacitance – pF

28°

10 30 50 70 90

Figure 61

200

150

100

0

110

250

f – Frequency – Hz

EQUIVALENT INPUT NOISE VOLTAGE

vs

FREQUENCY

300

1000100

RS = 20Ω
TA = 25°C

VDD = 3 V

50

Vn – Equivalent Input Noise Voltage – nV Hz

V

n

nV/ Hz

VDD = 5 V

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

31

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

electrical characteristics at specified free-air temperature

TLV2341I

PARAMETER

TEST

T

A

†

VDD = 3 V VDD = 5 V

UNIT

CONDITIONS

MIN TYP MAX MIN TYP MAX

p

VO = 1 V,
V

I

= 1 V,

25°C 0.6 8 1.1 8

VIOInput offset voltage

IC

,

RS = 50 Ω,
RL = 1 MΩ

Full range 10 10

mV

Average temperature of 25°C to

°

α

VIO

g

input offset voltage 85°C

1

1.1µV/°C

p

V

= 1 V,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

O

,

VIC = 1 V

85°C 22 1000 24 1000

pA

p

V

= 1 V,

25°C 0.6 0.6

p

IIBInput bias current (see Note 4)

O

,

VIC = 1 V

85°C 175 2000 200 2000

pA

°

–0.2

–0.3

–0.2

–0.3

Common-mode input

25°C

to2to

2.3

to4to

4.2

V

V

ICR

voltage range (see Note 5)

–0.2

–0.2

Full range

to

1.8

to

3.8

V

p

VIC = 1 V,

25°C 1.75 1.9 3.2 3.8

VOHHigh-level output voltage

V

ID

=

100 mV

,

IOH = –1 mA

Full range 1.7 3

V

p

VIC = 1 V,

25°C 115 150 95 150

VOLLow-level output voltage

V

ID

= –

100 mV

,

IOL = 1 mA

Full range 190 190

mV

Large-signal differential

VIC = 1 V,

25°C 50 400 50 520

A

VD

gg

voltage amplification

R

L

= 1 MΩ,

See Note 6

Full range 50 50

V/mV

VO = 1 V,

25°C 65 88 65 94

CMRR

Common-mode rejection ratio

V

IC

=

V

ICR

min

,

RS = 50 Ω

Full range 60 60

dB

Supply-voltage rejection ratio

VIC = 1 V,

25°C 70 86 70 86

k

SVR

ygj

(∆VDD/∆VIO)

V

O

=

1 V

,

RS = 50 Ω

Full range 65 65

dB

I

I(SEL)

Bias select current V

I(SEL) = 0

25°C 10 65 nA

pp

VO = 1 V,

25°C 5 17 10 17

IDDSupply current

V

IC

= 1 V,

No load

Full range 27 27

µ

A

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, V

O(PP)

= 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

32

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

operating characteristics at specified free-air temperature, V

DD

= 3 V

TLV2341I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

VIC = 1 V,

V

I(PP)

= 1 V,

p

25°C 0.02

SR

Slew rate at unity gain

R

L

=

1 MΩ

,

See Figure 92

C

L

=

20 pF

,

85°C

0.02

V/µs

p

f = kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 93

S

,

25°C

68

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 2.5

BOMMaximum output-swing bandwidth

OOH

,

RL = 1 MΩ,

L

,

See Figure 92

85°C

2

kH

z

V

= 10 mV, C

= 20 pF,

25°C 27

B1Unity-gain bandwidth

I

,

RL = 1 MΩ,

L

,

See Figure 94

85°C 21

kH

z

V

= 10 mV,f = B

,

–40°C 39°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 1 MΩ,

25°C

34°

See Figure 94

85°C 28°

operating characteristics at specified free-air temperature, VDD = 5 V

TLV2341I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 0.03

V

IC

= 1 V,

RL = 1 MΩ,

V

I(PP)

= 1

V

85°C 0.03

SR

Slew rate at unity gain

L

,

CL = 20 pF,

25°C 0.03

V/µs

See Figure 92

V

I(PP)

= 2.5

V

85°C 0.02

p

f =1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 93

S

,

25°C

68

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 5

BOMMaximum output-swing bandwidth

OOH

,

RL = 1 MΩ,

L

,

See Figure 92

85°C

4

kH

z

V

= 10 mV, C

= 20 pF,

25°C 85

B1Unity-gain bandwidth

I

,

RL = 1 MΩ,

L

,

See Figure 94

85°C

55

kH

z

V

= 10 mV

,

f = B

,

–40°C 38°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 1 MΩ,

25°C

34°

See Figure 94

85°C 28°

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

33

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

LOW-BIAS MODE

electrical characteristics, T

A

= 25°C

TLV2341Y

PARAMETER TEST CONDITIONS

VDD = 3 V VDD = 5 V

UNIT

MIN TYP MAX MIN TYP MAX

V

IO

Input offset voltage

VO = 1 V,
RS = 50 Ω,

VIC = 1 V,
RL = 1 MΩ

0.6 8 1.1 8 mV

I

IO

Input offset current
(see Note 4)

VO = 1 V, VIC = 1 V 0.1 0.1 pA

I

IB

Input bias current
(see Note 4)

VO = 1 V, VIC = 1 V 0.6 0.6 pA

–0.2 –0.3 –0.2 –0.3

V

ICR

C

ommon-mode input voltage

to to to to

V

ICR

range (see Note 5)

2 2.3 4 4.2

p

V

= 1 V, V

= 100 mV ,

VOHHigh-level output voltage

IC

,

IOH = –1 mA

ID

,

1.75

1.9

3.2

3.8

V

p

V

= 1 V, V

= –100 mV,

VOLLow-level output voltage

IC

,

IOL = 1 mA

ID

,

115

15095150

mV

A

VD

Large-signal differential
voltage amplification

VIC = 1 V,
See Note 6

RL = 1 MΩ,

50 400 50 520 V/mV

V

= 1 V, V

= V

min,

CMRR

Common-mode rejection ratio

O

,

RS = 50 Ω

IC ICR

,

65886594dB

Supply-voltage rejection ratio V

= 3 V to 5 V, V

= 1 V,

k

SVR

ygj

(∆VDD/∆VID)

DD

,

VO = 1 V,

IC

,

RS = 50 Ω

70867086dB

I

I(SEL)

Bias select current V

I(SEL)

= 0 10 65 nA

pp

VO = 1 V, VIC = 1 V,

IDDSupply current

O

No load

IC

51710

17µA

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

34

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Table of Graphs

FIGURE

V

IO

Input offset voltage Distribution 62, 63

α

VIO

Input offset voltage temperature coefficient Distribution 64, 65

vs Output current 66

V

OH

High-level output voltage

vs Supply voltage

67

OH

gg

g

vs Temperature 68
vs Common-mode input voltage 69

p

vs Common mode in ut voltage

vs Temperature

69

70, 72

VOLLow-level output voltage

vs Differential input voltage

,

71

vs Low-level output current 73
vs Supply voltage 74

A

VD

Large-signal differential voltage amplification

yg

vs Temperature 75

VD

gg g

vs Frequency 86, 87

I

IB

Input bias current vs Temperature 76

I

IO

Input offset current vs Temperature 76

V

IC

Common-mode input voltage vs Supply voltage 77

pp

vs Supply voltage 78

IDDSupply current

yg

vs Temperature 79
vs Supply voltage 80

SR

Slew rate

yg

vs Temperature 81

Bias select current vs Supply current 82

V

O(PP)

Maximum peak-to-peak output voltage vs Frequency 83

vs Temperature 84

B1Unity-gain bandwidth

vs Supply voltage 85
vs Supply voltage 88

φ

m

Phase margin

yg

vs Temperature 89

φ

m

g

vs Load capacitance 90

V

n

Equivalent input noise voltage vs Frequency 91
Phase shift vs Frequency 86, 87

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

35

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Figure 62

50

40

20

10

0

30

–1 0 1

Percentage of Units – %

2345

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

VIO – Input Offset Voltage – mV

VDD = 3 V
TA = 25°C
P Package

–5 –4 –3 –2

Figure 63

50

40

20

10

0

30

–1 0 1

70

60

2345

Percentage of Units – %

VIO – Input Offset Voltage – mV

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

VDD = 5 V
TA = 25°C
P Package

–5 –4 –3 –2

Figure 64

–8 –6 –4 –2

–10 0 2

Percentage of Units – %

46810

50

40

20

10

0

30

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

VDD = 3 V
TA = 25°C to 85°C
P Package

α

VIO

– Temperature Coefficient – µV/°C

Figure 65

α

VIO

– Temperature Coefficient – µV/°C

Percentage of Units – %

–10 0246810

50

40

20

10

0

30

70

60

DISTRIBUTION OF TLV2341

INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

VDD = 5 V
TA = 25°C to 85°C
P Package
Outliers:
(1) 19.2 mV/°C
(1) 12.1 mV/°C

–8 –6 –4 –2

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

36

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Figure 66

V0H – High-Level Output Voltage – V

V

OH

3

2

1

0

0

4

5

IOH – High-Level Output Current – mA

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

VDD = 3 V

VDD = 5 V

VIC = 1 V
VID = 100 mV
TA = 25°C

–2 –4 –6 –8

Figure 67

V0H – High-Level Output Voltage – V

V

OH

4

2

0

8

6

02468

HIGH-LEVEL OUTPUT VOLTAGE

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

VIC = 1 V
VID = 100 mV
RL = 1 MΩ
TA = 25°C

Figure 68

1.8

1.2

0.6

0

2.4

3

HIGH-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

–75 –50 –25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

V0H – High-Level Output Voltage – V

V

OH

VDD = 3 V
VIC = 1 V
VID = 100 mV

IOH = – 500 µA
IOH = –1 mA
IOH = –2 mA
IOH = –3 mA
IOH = –4 mA

Figure 69

VOL – Low-Level Output V oltage – mV

V

OL

500

400

350

300

01 2

600

650

700

34

550

450

LOW-LEVEL OUTPUT VOLTAGE

vs

COMMON-MODE INPUT VOLTAGE

VIC – Common-Mode Input Voltage – V

VID = –1 V

VID = –100 mV

VDD = 5 V
IOL = 5 mA
TA = 25°C

TLV2341, TLV2341Y

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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Figure 70

–75 –50 –25 0 25 50 75 100 125

125

110

80
65
50

185

95

155

140

170

200

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 3 V
VIC = 1 V
VID = –100 mV
IOL = 1 mA

Figure 71

400

200

100

0

0–2–4

600

700

800

–6 –8

500

300

LOW-LEVEL OUTPUT VOLTAGE

vs

DIFFERENTIAL INPUT VOLTAGE

VOL – Low-Level Output V oltage – mV

V

OL

VID – Differential Input Voltage – V

VDD = 5 V
VIC = |VID/2|
IOL = 5 mA
TA = 25°C

Figure 72

400

200

100

0

600

700

800

500

300

LOW-LEVEL OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

900

–75 –50 –25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

VOL – Low-Level Output V oltage – mV

V

OL

VDD = 5 V
VIC = 0.5 V
VID = –1 V
IOL = 5 mA

Figure 73

0.5

0.4

0.2

0.1
0

0.9

0.3

0123456

0.7

0.6

0.8

1

78

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

VOL – Low-Level Output V oltage – mV

V

OL

IOL – Low-Level Output Current – mA

VIC = 1 V
VID = –1 V
TA = 25°C

VDD = 3 V

VDD = 5 V

TLV2341, TLV2341Y
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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Figure 74

VDD – Supply Voltage – V

1000

800

200

0

024 6

1400

1800

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

SUPPLY VOLTAGE

2000

8

600

1600

1200

400

TA = –40°C

TA = 25°C

RL = 1 MΩ

TA = 85°C

– Large-Signal Differential Voltage
A

VD

Amplification – V/mV

Figure 75

–75

TA – Free-Air Temperature – °C

0 25 50 75 100 125

LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

vs

FREE-AIR TEMPERATURE

RL = 1 MΩ

VDD = 5 V

VDD = 3 V

1000

800

200

0

1400

1800

2000

600

1600

1200

400

–50 –25

– Large-Signal Differential Voltage
A

VD

Amplification – V/mV

Figure 76

INPUT BIAS CURRENT AND INPUT

OFFSET CURRENT

vs

FREE-AIR TEMPERATURE

TA – Free-Air Temperature – °C

IIB and IIO – Input Bias and Offset Currents – pA

I

IB

I

IO

10

4

10

3

10

2

10

1

1

0.1
25 45 65 85 105 125

VDD = 3 V
VIC = 1 V
See Note A

I

IB

I

IO

35 55 75 95 115

NOTE A: The typical values of input bias current and input offset

current below 5 pA are determined mathematically.

Figure 77

COMMON-MODE INPUT VOLTAGE

POSITIVE LIMIT

vs

SUPPLY VOLTAGE

4

2

0

8

6

02468

V

DD

– Supply Voltage – V

VIC – Common-Mode Input Voltage

IC

V

TA = 25°C

TLV2341, TLV2341Y

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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Figure 78

IDD – Supply Current – uA

DD

I

Aµ

20

10

5

0

30

35

40

25

15

VDD – Supply Voltage – V

SUPPLY CURRENT

vs

SUPPLY VOLTAGE

45

02468

V

IC

= 1 V
VO = 1 V
No Load

TA = –40°C

TA = 25°C

TA = 85°C

Figure 79

15

10

5

0

20

25

SUPPLY CURRENT

vs

FREE-AIR TEMPERATURE

30

TA – Free-Air Temperature – °C

–75 –50 –25 0 25 50 75 100 125

VIC = 1 V
VO = 1 V
No Load

VDD = 5 V

VDD = 3 V

IDD – Supply Current – uA

DD

I

Aµ

Figure 80

0.04

0.02

0.01

0

0.06

0.03

02468

0.05

SLEW RATE

vs

SUPPLY VOLTAGE

0.07

VDD – Supply Voltage – V

VIC = 1 V
V

I(PP)

= 1 V
AV = 1
RL = 1 MΩ
CL = 20 pF
TA = 25°C

SR – Slew Rate – V/us

sµV/

Figure 81

0.04

0.02

0.01

0

0.06

0.07

0.05

0.03

SLEW RATE

vs

FREE-AIR TEMPERATURE

–75 –50 –25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

VIC = 1 V
V

I(PP)

= 1 V
AV = 1
RL = 1 MΩ
CL = 20 pF

VDD = 5 V

VDD = 3 V

SR – Slew Rate – V/us

sµV/

TLV2341, TLV2341Y
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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Figure 82

60

0

024 6

Bias Select Current – nA

150

8

120

90

30

VDD – Supply Voltage – V

BIAS SELECT CURRENT

vs

SUPPLY VOLTAGE

TA = 25°C
V

I(SEL)

= V

DD

Figure 83

3

2

1

0

4

f – Frequency – kHz

5

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

vs

FREQUENCY

0.1 1 10 100

RL = 1 MΩ

TA = –40°C

VDD = 3 V

TA = 85°C

VDD = 5 V

TA = 25°C

– Maximum Peak-to-Peak Output Voltage – V

V

O(PP)

Figure 84

B1 – Unity-Gain Bandwidth – kHz

80

50

35

20

110

125

140

95

65

UNITY-GAIN BANDWIDTH

vs

FREE-AIR TEMPERATURE

–75 –50 –25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

B

1

VI = 10 mV
RL = 1 MΩ
CL = 20 pF

VDD = 5 V

VDD = 3 V

Figure 85

70

60

40
30
20

110

50

0123456

90

80

100

120

78

UNITY-GAIN BANDWIDTH

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

B1 – Unity-Gain Bandwidth – MHz

B

1

VI = 10 mV
RL = 1 MΩ
CL = 20 pF
TA = 25°C

TLV2341, TLV2341Y

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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

1 10 100 1 k 10 k 100 k

f – Frequency – Hz

1 M

Phase Shift

–60°

–30°

0°

30°

60°

90°

120°

150°

180°

10

7

10

6

10

5

10

4

10

3

10

2

10

1

0.1

VDD = 3 V
CL = 20 pF
RL = 1 MΩ
TA = 25°C

A

VD

Phase Shift

1

– Large-Signal Differential Voltage Amplification
A

VD

Figure 86

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

1 10 100 1 k 10 k 100 k 1 M

f – Frequency – Hz

Phase Shift

–60°

–30°

0°

30°

60°

90°

120°

150°

180°

10

6

10

5

10

4

10

3

10

2

10

1

1

A

VD

Phase Shift

10

7

0.1

VDD = 5 V
CL = 20 pF
RL = 1 MΩ
TA = 25°C

– Large-Signal Differential Voltage Amplification
A

VD

Figure 87

TLV2341, TLV2341Y
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TYPICAL CHARACTERISTICS (LOW-BIAS MODE)

Figure 88

02468

PHASE MARGIN

vs

SUPPLY VOLTAGE

VDD – Supply Voltage – V

VI = 10 mV
RL = 1 MΩ
CL = 20 pF
TA = 25°C

om – Phase Margin

φ

m

42°

40°

38°

36°

30°

34°

32°

Figure 89

PHASE MARGIN

vs

FREE-AIR TEMPERATURE

–75 –50 –25 0 25 50 75 100 125

TA – Free-Air Temperature – °C

VI = 10 mV
RL = 1 MΩ
CL = 20 pF

VDD = 3 V

VDD = 5 V

om – Phase Margin

φ

m

40°
38°
36°

30°

34°
32°

28°
26°
24°
22°

20°

Figure 90

om – Phase Margin

φ

m

40°
38°
36°

30°

34°
32°

28°
26°
24°
22°

20°

0 102030405060708090100

PHASE MARGIN

vs

LOAD CAPACITANCE

CL – Load Capacitance – pF

VDD = 3 V

VI = 10 mV
RL = 1 MΩ
TA = 25°C

VDD = 5 V

Figure 91

0

f – Frequency – Hz

EQUIVALENT INPUT NOISE VOLTAGE

vs

FREQUENCY

100

75

25

125

175

200

50

150

1 10 100 1000

VDD = 3 V, 5 V
RS = 20 Ω
TA = 25°C

Vn – Equivalent Input Noise Voltage – nV Hz

V

n

nV/ Hz

TLV2341, TLV2341Y

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PARAMETER MEASUREMENT INFORMATION

single-supply versus split-supply test circuits

Because the TL V2341 is optimized for single-supply operation, circuit configurations used for the various tests
often present some inconvenience since the input signal, in many cases, must be offset from ground. This
inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative
rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives
the same result.

–
+

–
+

V

DD

V

I

C

L

R

L

V

O

V

DD+

V

DD–

V

I

V

O

C

L

R

L

(a) SINGLE SUPPLY

(b) SPLIT SUPPL Y

Figure 92. Unity-Gain Amplifier

–
+

–
+

1/2 V

DD

V

DD

20 Ω

20 Ω

2 kΩ

2 kΩ

V

DD+

V

DD–

V

OV

O

20 Ω

20 Ω

(a) SINGLE SUPPLY (b) SPLIT SUPPLY

Figure 93. Noise-Test Circuits

–
+

–
+

10 kΩ

1/2 V

DD

100 Ω

V

O

V

DD

V

I

V

I

100 Ω

(a) SINGLE SUPPLY (b) SPLIT SUPPLY

10 kΩ

V

DD+

V

DD–

C

L

C

L

V

O

Figure 94. Gain-of-100 Inverting Amplifier

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PARAMETER MEASUREMENT INFORMATION

input bias current

Because of the high input impedance of the TL V2341 operational amplifier , attempts to measure the input bias
current can result in erroneous readings. The bias current at normal ambient temperature is typically less than
1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are offered to avoid
erroneous measurements:

• Isolate the device from other potential leakage sources. Use a grounded shield around and between the

device inputs (see Figure 95). Leakages that would otherwise flow to the inputs are shunted away.

• Compensate for the leakage of the test socket by actually performing an input bias current test (using a

picoammeter) with no device in the test socket. The actual input bias current can then be calculated by
subtracting the open-socket leakage readings from the readings obtained with a device in the test
socket.

Many automatic testers as well as some bench-top operational amplifier testers use the servo-loop
technique with a resistor in series with the device input to measure the input bias current (the voltage
drop across the series resistor is measured and the bias current is calculated). This method requires
that a device be inserted into the test socket to obtain a correct reading; therefore, an open-socket
reading is not feasible using this method.

V = V

IC

8

5

1

4

Figure 95. Isolation Metal Around Device Inputs (P package)

low-level output voltage

To obtain low-level supply-voltage operation, some compromise is necessary in the input stage. This
compromise results in the device low-level output voltage being dependent on both the common-mode input
voltage level as well as the differential input voltage level. When attempting to correlate low-level output
readings with those quoted in the electrical specifications, these two conditions should be observed. If
conditions other than these are to be used, please refer to the Typical Characteristics section of this data sheet.

input offset voltage temperature coefficient

Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This
parameter is actually a calculation using input offset voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance which can cause erroneous input
offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the
moisture also covers the isolation metal itself, thereby rendering it useless. These measurements should be
performed at temperatures above freezing to minimize error.

full-power response

Full-power response, the frequency above which the operational amplifier slew rate limits the output voltage
swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is

–
+

TLE2426

V

O

V

I

R1

R2

V

DD

Figure 97. Inverting Amplifier With

Voltage Reference

V

O

+ ǒ

VDD–V

I

2

Ǔ

R2
R1

)

V

DD

2

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PARAMETER MEASUREMENT INFORMATION

generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal
input signal until the maximum frequency is found above which the output contains significant distortion. The
full-peak response is defined as the maximum output frequency , without regard to distortion, above which full
peak-to-peak output swing cannot be maintained.

Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 92. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(Figure 96). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.

(d) f > B

OM

(c) f = B

OM

(b) BOM > f > 100 Hz(a) f = 100 Hz

Figure 96. Full-Power-Response Output Signal

test time

Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.

APPLICATION INFORMATION

single-supply operation

While the TLV2341 performs well using dual­power supplies (also called balanced or split
supplies), the design is optimized for single­supply operation. This includes an input common­mode voltage range that encompasses ground as
well as an output voltage range that pulls down to
ground. The supply voltage range extends down
to 2 V, thus allowing operation with supply levels
commonly available for TTL and HCMOS.

Many single-supply applications require that a
voltage be applied to one input to establish a
reference level that is above ground. This virtual
ground can be generated using two large
resistors, but a preferred technique is to use a
virtual-ground generator such as the TLE2426.
The TLE2426 supplies an accurate voltage equal
to V

DD

/2, while consuming very little power and is

suitable for supply voltages of greater than 4 V.

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APPLICATION INFORMATION

single-supply operation (continued)

The TL V2341 works well in conjunction with digital logic; however, when powering both linear devices and digital
logic from the same power supply, the following precautions are recommended:

• Power the linear devices from separate bypassed supply lines (see Figure 98); otherwise, the linear

device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital
logic.

• Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive

decoupling is often adequate; however, RC decoupling may be necessary in high-frequency
applications.

–
+

Logic Logic Logic

Power
Supply

–
+

Logic Logic Logic

Power
Supply

(a) COMMON-SUPPLY RAILS

(b) SEPARATE-BYPASSED SUPPLY RAILS (preferred)

Figure 98. Common Versus Separate Supply Rails

input offset voltage nulling

The TLV2341 offers external input offset null control. Nulling of the input offset voltage can be achieved by
adjusting a 25-kΩ potentiometer connected between the offset null terminals with the wiper connected as shown
in Figure 99. The amount of nulling range varies with the bias selection. In the high-bias mode, the nulling range
allows the maximum offset voltage specified to be trimmed to zero. In low-bias and medium-bias modes, total
nulling may not be possible.

V

DD

25 kΩ

N1

N2

–
+

25 kΩ

N1

N2

–
+

(a) SINGLE SUPPLY

(b) SPLIT SUPPL Y

GND

Figure 99. Input Offset Voltage Null Circuit

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APPLICATION INFORMATION

bias selection

Bias selection is achieved by connecting the bias-select pin to one of the three voltage levels (see Figure 100).
For medium-bias applications, it is recommended that the bias-select pin be connected to the midpoint between
the supply rails. This is a simple procedure in split-supply applications, since this point is ground. In
single-supply applications, the medium-bias mode necessitates using a voltage divider as indicated. The use
of large-value resistors in the voltage divider reduces the current drain of the divider from the supply line.
However, large-value resistors used in conjunction with a large-value capacitor require significant time to charge
up to the supply midpoint after the supply is switched on. A voltage other than the midpoint may be used if it
is within the voltages specified in the following table.

BIAS MODE

BIAS-SELECT VOLTAGE

(single supply)

Low V

DD

Medium 1 V to VDD –1 V

High GND

Figure 100. Bias Selection for Single-Supply Applications

input characteristics

The TL V2341 is specified with a minimum and a maximum input voltage that, if exceeded at either input, could
cause the device to malfunction. Exceeding this specified range is a common problem, especially in
single-supply operation. The lower the range limit includes the negative rail, while the upper range limit is
specified at V

DD

–1 V at TA = 25°C and at VDD –1.2 V at all other temperatures.

The use of the polysilicon-gate process and the careful input circuit design gives the TL V2341 good input offset
voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS devices
is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant implanted in
the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the polarization
problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset voltage drift with
time has been calculated to be typically 0.1 µV/month, including the first month of operation.

Because of the extremely high input impedance and resulting low bias-current requirements, the TLV2341 is
well suited for low-level signal processing; however, leakage currents on printed-circuit boards and sockets can
easily exceed bias-current requirements and cause a degradation in device performance. It is good practice
to include guard rings around inputs (similar to those of Figure 95 in the Parameter Measurement Information
section). These guards should be driven from a low-impedance source at the same voltage level as the
common-mode input (see Figure 101).

The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.

To BIAS SELECT

Low

High

Medium

1 MΩ

V

DD

1 MΩ

0.01 µF

–
+

Figure 102. Compensation for Input Capacitance

TLV2341, TLV2341Y
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APPLICATION INFORMATION

input characteristics (continued)

–
+

–
+

–
+

(a) NONINVERTING AMPLIFIER (b) INVERTING AMPLIFIER

(c) UNITY-GAIN AMPLIFIER

V

O

V

I

V

O

V

O

V

I

V

I

Figure 101. Guard-Ring Schemes

noise performance

The noise specifications in operational amplifiers circuits are greatly dependent on the current in the first-stage
differential amplifier . The low input bias-current requirements of the TLV2341 results in a very low noise current,
which is insignificant in most applications. This feature makes the device especially favorable over bipolar
devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise
currents.

feedback

Operational amplifier circuits nearly always
employ feedback, and since feedback is the first
prerequisite for oscillation, caution is appropriate.
Most oscillation problems result from driving
capacitive loads and ignoring stray input
capacitance. A small-value capacitor connected
in parallel with the feedback resistor is an effective
remedy (see Figure 102). The value of this
capacitor is optimized empirically.

electrostatic-discharge protection

The TLV2341 incorporates an internal electro­static-discharge (ESD)-protection circuit that
prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care
should be exercised, however, when handling these devices as exposure to ESD may result in the degradation
of the device parametric performance. The protection circuit also causes the input bias currents to be
temperature dependent and have the characteristics of a reverse-biased diode.

latch-up

Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TL V2341 inputs
and output are designed to withstand –100-mA surge currents without sustaining latch-up; however, techniques
should be used to reduce the chance of latch-up whenever possible. Internal protection diodes should not by

–
+

V

O

C

L

V

I

2.5 V

TA = 25°C
f = 1 kHz
V

I(PP)

= 1 V

–2.5 V

–
+

RP+

VDD*

V

O

IF)

IL)

I

P

IP = Pullup Current
Required by the
Operational Amplifier
(typically 500 µA)

V

O

V

DD

R

P

I

P

I

F

I

L

R

L

V

I

R1

R2

Figure 103. Resistive Pullup to Increase V

OH

Figure 104. Test Circuit for Output Characteristics

TLV2341, TLV2341Y

LinCMOS PROGRAMMABLE LOW-VOLTAGE

OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

49

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

design be forward biased. Applied input and output voltage should not exceed the supply voltage by more that
300 mV. Care should be exercised when using capacitive coupling on pulse generators. Supply transients
should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails as close
to the device as possible.

The current path established if latch-up occurs is usually between the positive supply rail and ground and can
be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.

output characteristics

The output stage of the TLV2341 is designed to
sink and source relatively high amounts of current
(see Typical Characteristics). If the output is
subjected to a short-circuit condition, this
high-current capability can cause device damage
under certain conditions. Output current capability
increases with supply voltage.

Although the TLV2341 possesses excellent
high-level output voltage and current capability,
methods are available for boosting this capability
if needed. The simplest method involves the use
of a pullup resistor (R

P

) connected from the output
to the positive supply rail (see Figure 103). There
are two disadvantages to the use of this circuit.
First, the NMOS pulldown transistor N4 (see
equivalent schematic) must sink a comparatively
large amount of current. In this circuit, N4 behaves
like a linear resistor with an on resistance between
approximately 60 Ω and 180 Ω, depending on
how hard the operational amplifier input is driven.
With very low values of R

P

, a voltage offset from
0 V at the output occurs. Secondly , pullup resistor
R

P

acts as a drain load to N4 and the gain of the
operational amplifier is reduced at output voltage
levels where N5 is not supplying the output
current.

All operating characteristics of the TLV2341 are measured using a 20-pF load. The device drives higher
capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower
frequencies thereby causing ringing, peaking, or even oscillation (see Figures 105, 106 and 107). In many
cases, adding some compensation in the form of a series resistor in the feedback loop alleviates the problem.

TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS

SLOS110A – MAY 1992 – REVISED AUGUST 1994

50

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

output characteristics (continued)

(a) CL = 20 pF, RL = NO LOAD (b) CL = 130 pF, RL = NO LOAD (c) CL = 150 pF, RL = NO LOAD

Figure 105. Effect of Capacitive Loads in High-Bias Mode

(a) CL = 20 pF, RL = NO LOAD (b) CL = 170 pF, RL = NO LOAD (c) CL = 190 pF, RL = NO LOAD

Figure 106. Effect of Capacitive Loads in Medium-Bias Mode

(a) CL = 20 pF, RL = NO LOAD (b) CL = 260 pF, RL = NO LOAD

(c) CL = 310 pF, RL = NO LOAD

Figure 107. Effect of Capacitive Loads in Low-Bias Mode

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