Direct Upgrades to TL07x and TL08x BiFET
Operational Amplifiers
D
Faster Slew Rate (20 V/µs Typ) Without
Increased Power Consumption
TL051
D OR P PACKAGE
(TOP VIEW)
D
TL052
D, P, OR PS PACKAGE
(TOP VIEW)
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
On-Chip Offset-Voltage Trimming for
Improved DC Performance and Precision
Grades Are Available (1.5 mV, TL051A)
D, DB, N, OR NS PACKAGE
TL054
(TOP VIEW)
OFFSET N1
IN–
IN+
V
CC–
1
2
3
4
NC
8
V
7
CC+
OUT
6
OFFSET N2
5
1OUT
1IN–
1IN+
V
CC–
1
2
3
4
8
7
6
5
V
CC+
2OUT
2IN–
2IN+
1OUT
1IN–
1IN+
V
CC+
2IN+
2IN–
2OUT
1
2
3
4
5
6
7
14
13
12
11
10
9
8
4OUT
4IN–
4IN+
V
3IN+
3IN–
3OUT
description/ordering information
The TL05x series of JFET-input operational amplifiers of fers improved dc and ac characteristics over the TL07x
and TL08x families of BiFET operational amplifiers. On-chip Zener trimming of offset voltage yields precision
grades as low as 1.5 mV (TL051A) for greater accuracy in dc-coupled applications. T exas Instruments improved
BiFET process and optimized designs also yield improved bandwidth and slew rate without increased power
consumption. The TL05x devices are pin-compatible with the TL07x and TL08x and can be used to upgrade
existing circuits or for optimal performance in new designs.
BiFET operational amplifiers offer the inherently higher input impedance of the JFET -input transistors, without
sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with
high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than
bipolar or CMOS devices having comparable power consumption.
The TL05x family was designed to offer higher precision and better ac response than the TL08x, with the low
noise floor of the TL07x. Designers requiring significantly faster ac response or ensured lower noise should
consider the Excalibur TLE208x and TLE207x families of BiFET operational amplifiers.
CC–
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to
observe common-mode input voltage limits and output swing when operating from a single supply . DC biasing
of the input signal is required, and loads should be terminated to a virtual-ground node at mid-supply. Texas
Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single
supplies.
The TL05x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems,
Texas Instruments LinCMOS families of operational amplifiers (TLC-prefix) are recommended. When moving
from BiFET to CMOS amplifiers, particular attention should be paid to the slew rate and bandwidth
requirements, and also the output loading.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Copyright 2003, Texas Instruments Incorporated
1
TL05x, TL05xA
PDIP (P)
Tube of 50
052AC
PDIP (P)
Tube of 50
TL051C
0°C to 70°C
SOIC (D)
TL052C
TL054C
4 mV
SOIC (D)
TL054C
SOIC (D)
052AI
PDIP (P)
Tube of 50
40°C to 85°C
1.5 mV
TL052I
TL054AI
SOIC (D)
TL054I
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
ORDERING INFORMATION
T
A
–
†
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
VIOmax
AT 25°C
800 µV
1.5 mV
800 µV
4 mV
PACKAGE
SOIC (D)
PDIP (N)Tube of 25TL054ACNTL054ACN
SOP (PS)Reel of 2000TL052CPSRTL052
SSOP (DB)Reel of 2000TL054CDBRTL054
PDIP (N)Tube of 25TL054CNTL054CN
SOP (NS)Reel of 2000TL054CNSRTL054
PDIP (P)Tube of 50TL052AIPTL052AI
PDIP (N)Tube of 25TL054AINTL054AIN
SOIC (D)
PDIP (N)Tube of 25TL054INTL054IN
†
Tube of 75TL051ACD051AC
Tube of 75TL052ACD
Reel of 2500TL052ACDR
Tube of 75TL051CD
Reel of 2500TL051CDR
Tube of 75TL052CD
Reel of 2500TL052CDR
Tube of 50TL054ACD
Reel of 2500TL054ACDR
Tube of 50TL054CD
Reel of 2500TL054CDR
Tube of 75TL052AID
Reel of 2500TL052AIDR
Tube of 75TL051IDTL051I
Tube of 75TL052ID
Reel of 2500TL052IDR
Tube of 50TL054AID
Reel of 2500TL054AIDR
Tube of 50TL054ID
Reel of 2500TL054IDR
ORDERABLE
PART NUMBER
TL051ACPTL051ACP
TL052ACPTL052ACP
TL051CPTL051CP
TL052CPTL052CP
TL051IPTL051IP
TL052IPTL052IP
TOP-SIDE
MARKING
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
T
symbol (each amplifier)
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
IN–
IN+
equivalent schematic (each amplifier)
Q2
Q3
IN+
IN–
JF1JF2
Q4
Q1
See Note A
OFFSET N1
OFFSET N2
R1
R2R3
Q5
–
+
Q6
Q7
D1
C1
R4
OUT
Q8
V
CC+
R5
R6
Q10
Q11
Q9
Q12
R8
Q13
R7
R9
Q14
R10D2
Q17
Q15
Q16
JF3
OU
NOTE A: OFFSET N1 and OFFSET N2 are available only on the TL051x.
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between V
2. Differential voltages are at IN+ with respect to IN–.
3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.
4. Maximum power dissipation is a function of TJ(max),
ambient temperature is PD = (TJ(max) – TA)/
5. The package thermal impedance is calculated in accordance with JESD 51-7.
, and TA. The maximum allowable power dissipation at any allowable
θ
JA
JA
. Operating at the absolute maximum TJ of 150°C can impact reliability.
CC–.
†
recommended operating conditions
V
T
CC±
A
Supply voltage±5±15±5±15V
p
Operating free-air temperature070–4085°C
C SUFFIXI SUFFIX
MINMAXMINMAX
V
= ±5 V–14–14
CC±
V
= ±15 V–1111–1111
CC±
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
†
TL051C
VIOInput offset voltage
mV
TL051AC
V
0
a
R
S
Ω
V/°C
IIOInput offset current
OIC
IIBInput bias current
OIC
V
V
R
10 kΩ
V
V
R
2 kΩ
R
10 kΩ
V
g
V
R
2 kΩ
L
diff
l
¶
voltage am lification
¶
C
V
V
i
rejection ratio
V
O
R
S
Ω
S
ratio (∆V
CC±
/∆VIO)
CCyO
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
TL051C and TL051AC electrical characteristics at specified free-air temperature
TL051C, TL051AC
PARAMETERTEST CONDITIONS
p
,
=
O
Temperature coefficient
V
IO
of input offset voltage
Input offset-voltage
long-term drift
p
p
ICR
OM+
OM–
A
VD
r
i
c
i
CMRR
k
SVR
I
CC
†
Full range is 0°C to 70°C.
‡
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
§
Typical values are based on the input offset-voltage shift observed through 168 hours of operating life test at TA = 150°C, extrapolated to
TA = 25°C using the Arrhenius equation, and assuming an activation energy of 0.96 eV .
TL051C and TL051AC operating characteristics at specified free-air temperature
TL051C, TL051AC
PARAMETERTEST CONDITIONS
SR+
SR–
t
r
t
f
n
V
N(PP)
I
n
THD
B
1
φ
m
†
Full range is 0°C to 70°C.
‡
For V
CC±
§
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
¶
For V
CC±
ve slew rate
§
‡
‡
= ±1 V; for V
I(PP)
O(RMS)
= 1 V; for V
at unity gain
egative slew rate
at unity gain
Rise time
Fall time
Overshoot factor
Equivalent input noise
voltage
Peak-to-peak equivalent
input noise voltage
Equivalent input
noise current
Total harmonic distortion
Unity-gain bandwidth
ase margin at unity
= ±5 V, V
= ±5 V, V
R
= 2 kΩ,C
See Figure 1
V
= ±10 mV ,
I(PP)
RL = 2 kΩ,
See Figures 1 and 2
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01
RS = 1 kΩ,
¶
f = 1 kHz
VI = 10 mV,RL = 2 kΩ,
I
CC±
=
= 25 F,
=
= 25 F,
=
= ±15 V, V
= ±15 V, V
CC±
p
p
p
= 100 pF,
,
f = 10 Hz25°C7575
f = 1 kHz25°C181830
f = 10 Hz to
10 kHz
RL = 2 kΩ,
=
L
= ±5 V.
I(PP)
= 6 V.
O(RMS)
T
A
25°C161320
Full
range
25°C151318
Full
range
25°C5556
0°C5455
70°C6363
25°C5557
0°C5456
70°C6264
25°C2419
0°C2419
70°C2419
25°C44µV
25°C0.0030.003%
25°C33.1
0°C3.23.3
70°C2.72.8
25°C5962
,
0°C5862
70°C5962
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
16.41122.6
161119.3
CC±
= ±15 V
UNIT
%
n
pA/√Hz
MHz
deg
z
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
†
A
TL051I
VIOInput offset voltage
mV
TL051AI
V
0
a
R
S
Ω
V/°C
IIOInput offset current
OIC
IIBInput bias current
OIC
V
V
R
10 kΩ
V
V
R
2 kΩ
R
10 kΩ
V
g
V
R
2 kΩ
L
diff
l
¶
voltage am lification
¶
,
C
V
IC
V
ICR
min,
rejection ratio
S
V
0
ratio (∆V
CC±
/∆VIO)
R
S
Ω
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
TL051I and TL051AI electrical characteristics at specified free-air temperature
TL051I, TL051AI
PARAMETERTEST CONDITIONS
p
,
=
O
Temperature coefficient of
V
IO
input offset voltage
Input offset-voltage
long-term drift
p
p
ICR
OM +
OM –
A
VD
r
i
c
i
CMRR
k
SVR
I
CC
†
Full range is –40°C to 85°C
‡
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
§
Typical values are based on the input offset-voltage shift observed through 168 hours of operating life test at TA = 150°C, extrapolated to
TA = 25°C using the Arrhenius equation, and assuming an activation energy of 0.96 eV .
TL051I and TL051AI operating characteristics at specified free-air temperature
TL051I, TL051AI
PARAMETERTEST CONDITIONS
SR+
SR–
t
r
t
f
n
V
N(PP)
I
n
THDTotal harmonic distortion
B
1
φ
m
†
Full range is –40°C to 85°C.
‡
For V
CC±
§
This parameter is tested on a sample basis for the TL051A. For other test requirements, please contact the factory. This statement has no bearing
on testing or nontesting of other parameters.
¶
For V
CC±
ve slew rate
§
‡
‡
= ±1 V; for V
I(PP)
O(RMS)
= 1 V; for V
at unity gain
egative slew rate
at unity gain
Rise time
Fall time
Overshoot factor
Equivalent input noise
voltage
Peak-to-peak equivalent
input noise voltage
Equivalent input
noise current
Unity-gain bandwidth
ase margin at unity
= ±5 V, V
= ±5 V, V
R
= 2 kΩ,C
See Figure 1
V
= ±10 mV ,
I(PP)
RL = 2 kΩ,
See Fi
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01pA/√Hz
RS = 1 kΩ,
¶
f = 1 kHz
VI = 10 mV,RL = 2 kΩ,
I
CC±
=
= 25 F,
=
= 25 F,
=
= ±15 V, V
= ±15 V, V
CC±
p
ures 1 and 2
p
p
= 100 pF,
,
f = 10 Hz25°C7575
f = 1 kHz25°C181830
f = 10 Hz to
10 kHz
RL = 2 kΩ,
=
L
= ±5 V.
I(PP)
= 6 V.
O(RMS)
T
A
25°C161320
Full
range
25°C151318
Full
range
25°C5556
–40°C5253
85°C6465
25°C5557
–40°C5153
85°C6465
25°C2419
–40°C2419
85°C2419
25°C44µV
25°C0.0030.003%
25°C33.1
–40°C3.53.6
85°C2.62.7
25°C5962
,
–40°C5861
85°C5962
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
11
11
CC±
= ±15 V
UNIT
%
n
MHz
deg
z
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
A
TL052C
VIOInput offset voltage
mV
TL052AC
V
IC
R
S
Ω
TL052C
8
8
a
V/°C
TL052AC
8625
IIOInput offset current
O
,
V
0
IIBInput bias current
O
,
V
0
V
V
R
10 kΩ
V
V
R
2 kΩ
R
10 kΩ
V
g
V
R
2 kΩ
¶
voltage am lification
¶
C
V
V
i
rejection ratio
V
O
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
TL052C and TL052AC electrical characteristics at specified free-air temperature
TL052C, TL052AC
PARAMETERTEST CONDITIONS
p
VO = 0,
= 0,
= 50 Ω
50
R
Temperature coefficient
V
IO
of input offset voltage
Input offset-voltage
long-term drift
p
p
Common-mode input
ICR
voltage range
Maximum positive peak
OM+
output voltage swing
Maximum negative peak
OM–
output voltage swing
A
r
i
c
CMRR
†
Full range is 0°C to 70°C.
‡
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters.
§
Typical values are based on the input offset-voltage shift observed through 168 hours of operating life test at TA = 150°C, extrapolated to
TA = 25°C using the Arrhenius equation, and assuming an activation energy of 0.96 eV .
TL052C and TL052AC electrical characteristics at specified free-air temperature (continued)
TL052C, TL052AC
k
SVR
I
CC
VO1/V
PARAMETERTEST CONDITIONS
Supply-voltage rejection
Supply current
p
Crosstalk attenuationAVD = 10025°C120120dB
O2
VO = 0,RS = 50 Ω
VO = 0,No load
T
A
25°C75997599
0°C
70°C75977597
25°C4.65.64.85.6
0°C
70°C4.46.44.66.4
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
75987598
4.76.44.86.4
CC±
= ±15 V
TL052C and TL052AC operating characteristics at specified free-air temperature
TL052C, TL052AC
PARAMETERTEST CONDITIONS
RL = 2 kΩ,CL = 100 pF,
Negative slew rate
–
at unity gain
t
r
t
f
V
I
n
THDTotal harmonic distortion
B
φ
†
Full range is 0°C to 70°C.
‡
For V
§
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters.
¶
For V
Rise time
Fall time
Overshoot factor
Equivalent input noise
n
voltage
Peak-to-peak equivalent
N(PP)
input noise current
Equivalent input
noise current
Unity-gain bandwidth
1
m
ase margin at unity
= ±5 V, V
CC±
= ±5 V, V
CC±
§
‡
= ±1 V; for V
I(PP)
O(RMS)
= 1 V; for V
See Figure 1
V
= ±10 mV ,
I(PP)
RL = 2 kΩ,
See Fi
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01pA/√Hz
RS = 1 kΩ,
¶
f = 1 kHz
VI = 10 mV,
CC±
=
= 25 F,
=
I
= 25 F,
=
= ±15 V, V
= ±15 V, V
CC±
p
,
ures 1 and 2
f = 10 Hz25°C7171
f = 1 kHz25°C191930
f = 10 Hz to
10 kHz
RL = 2 kΩ,
RL = 2 kΩ,
p
,
p
I(PP)
=
L
= ±5 V.
O(RMS)
,
= 6 V.
†
T
A
25°C17.8920.7
Full range
25°C15.4917.8
Full range8
25°C5556
0°C5455
70°C6363
25°C5557
0°C5456
70°C6264
25°C2419
0°C2419
70°C2419
25°C44µV
25°C0.0030.003%
25°C33
0°C3.23.2
70°C2.62.7
25°C6063
0°C5963
70°C6063
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
CC±
8
= ±15 V
UNIT
dB
mA
UNIT
%
n
MHz
deg
z
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
A
TL052I
VIOInput offset voltage
mV
V
0
TL052AI
V
IC
a
T
fficient
‡
V/°C
IIOInput offset current
O
,
IC
,
IIBInput bias current
O
,
IC
,
V
V
R
10 kΩ
V
V
R
2 kΩ
R
10 kΩ
V
g
V
R
2 kΩ
¶
voltage am lification
¶
C
V
V
i
rejection ratio
V
O
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
TL052I and TL052AI electrical characteristics at specified free-air temperature
TL052I, TL052AI
PARAMETERTEST CONDITIONS
p
,
=
O
=
= 0,
RS = 50 Ω
emperature coe
V
IO
Input offset-voltage
long-term drift
p
p
Common-mode input
ICR
voltage range
Maximum positive peak
OM+
output voltage swing
Maximum negative peak
OM–
output voltage swing
A
r
c
CMRR
†
‡
§
¶
Large-signal differential
VD
Input resistance25°C10
i
Input capacitance25°C1012pF
i
ommon-mode
Full range is –40°C to 85°C.
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters
Typical values are based on the input offset-voltage shift observed through 168 hours of operating life test at TA = 150°C, extrapolated to
TA = 25°C using the Arrhenius equation, and assuming an activation energy of 0.96 eV .
At V
TL052I and TL052AI electrical characteristics at specified free-air temperature (continued)
TL052I, TL052AI
k
SVR
I
CC
VO1/V
PARAMETERTEST CONDITIONS
Supply-voltage rejection
Supply current
p
Crosstalk attenuationAVD = 10025°C120120dB
O2
VO = 0,RS = 50 Ω
VO = 0,No load
T
A
25°C75997599
–40°C
85°C75997599
25°C4.65.64.85.6
–40°C
85°C4.46.44.66.4
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
75987598
4.56.44.76.4
CC±
= ±15 V
TL052I and TL052AI operating characteristics at specified free-air temperature
TL052I, TL052AI
PARAMETERTEST CONDITIONS
+
ew rate at unity gain
Negative slew rate at
–
unity gain
t
r
t
f
V
I
n
THDTotal harmonic distortion
B
φ
†
Full range is –40°C to 85°C.
‡
For V
§
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters.
¶
For V
Rise time
Fall time
Overshoot factor
Equivalent input noise
n
voltage
Peak-to-peak equivalent
N(PP)
input noise current
Equivalent input noise
current
Unity-gain bandwidth
1
m
CC±
CC±
‡
§
ase margin at unity
= ±5 V, V
= ±5 V, V
= ±1 V; for V
I(PP)
O(RMS)
= 1 V; for V
R
= 2 kΩ,C
See Figure 1
=
=
RL = 2 kΩ,CL = 100 pF,
See Figures 1 and 2
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01pA/√Hz
RS = 1 kΩ,
¶
f = 1 kHz
VI = 10 mV,
= 25 F,
p
=
I
= 25 F,
=
p
= ±15 V, V
CC±
= ±15 V, V
CC±
= 100 pF,
,
f = 10 Hz25°C7171
f = 1 kHz25°C191930
f = 10 Hz to
10 kHz
RL = 2 kΩ,
RL = 2 kΩ,
,
I(PP)
=
L
O(RMS)
,
= ±5 V.
= 6 V.
†
T
A
25°C17.8920.7
Full range8
25°C15.4917.8
Full range8
25°C5556
–40°C5253
85°C6465
25°C5557
–40°C5153
85°C6465
25°C24%19%
–40°C24%19%
85°C24%19
25°C44µV
25°C0.0030.003%
25°C33
–40°C3.53.6
85°C2.52.6
25°C6063
–40°C5861
85°C6063
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
CC±
= ±15 V
UNIT
dB
mA
UNIT
%
n
MHz
deg
z
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
†
TL054C
VIOInput offset voltage
mV
TL054AC
V
O
a
R
S
Ω
V/°C
IIOInput offset current
OIC
IIBInput bias current
OIC
V
V
R
10 kΩ
V
V
R
2 kΩ
R
10 kΩ
V
g
V
R
2 kΩ
L
diff
l
voltage am lification
§
C
V
V
i
rejection ratio
V
O
R
S
Ω
S
V
±5 V to ±15 V
ratio (∆V
CC±
/∆VIO)
V
O
R
S
Ω
S
t
(four am lifiers)
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
TL054C and TL054AC electrical characteristics at specified free-air temperature
TL054C, TL054AC
PARAMETERTEST CONDITIONS
p
= 0,
V
IO
ICR
OM+
OM–
A
VD
r
i
c
i
CMRR
k
SVR
I
CC
VO1/V
†
Full range is 0°C to 70°C.
‡
Typical values are based on the input offset-voltage shift observed through 168 hours of operating life test at TA = 150°C, extrapolated to
TA = 25°C using the Arrhenius equation, and assuming an activation energy of 0.96 eV .
TL054C and TL054AC operating characteristics at specified free-air temperature
TL054C, TL054C
PARAMETERTEST CONDITIONS
Positive slew rate
+
at unity gain
RL = 2 kΩ,CL = 100 pF,
Negative slew rate at
–
unity gain
t
r
t
f
n
V
N(PP)
I
n
THD
B
1
φ
m
†
Full range is 0°C to 70°C.
‡
For V
§
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters.
¶
For V
Rise time0°C5455
Fall time
Overshoot factor0°C24%19%
Equivalent input noise
voltage
Peak-to-peak equivalent
input noise voltage
Equivalent input
noise current
Total harmonic
distortion
Unity-gain bandwidth
= ±5 V, V
CC±
= ±5 V, V
CC±
‡
§
¶
= ±1 V; for V
I(PP)
O(RMS
) = 1 V; for V
See Figure 1 and Note 7
V
= ±10 mV ,
I(PP)
See Fi
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01
RS = 1 kΩ,
f = 1 kHz
I
I
CC±
=
L
=
=
= 25 F,
=
= 25 F,
=
= ±15 V, V
CC±
,
p
,
ures 1 and 2
f = 10 Hz25°C7575
f = 1 kHz25°C212145
f = 10 Hz to
10 kHz
RL = 2 kΩ,
=
p
p
= ±15 V, V
L
=
L
I(PP)
O(RMS)
= ±5 V.
T
A
25°C15.41017.8
0°C15.7817.9
70°C14.4817.5
25°C13.91015.9
0°C14.3816.1
70°C13.3815.5
25°C5556
70°C6363
25°C5557
0°C5456
70°C6264
25°C24%19%
70°C24%19
25°C44µV
25°C0.0030.003%
25°C2.72.7
,
0°C33MHz
70°C2.42.4
25°C6164
,
0°C6064deg
70°C6163
= 6 V.
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
CC±
= ±15 V
UNIT
%
pA/√Hz
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
†
A
TL054I
VIOIn ut offset voltage
mV
TL054AI
V
O
R
S
Ω
V/°C
IIOInput offset current
OIC
IIBInput bias current
OIC
V
V
R
10 kΩ
V
V
R
2 kΩ
R
10 kΩ
V
g
V
R
2 kΩ
L
diff
l
voltage am lification
§
C
V
V
i
rejection ratio
V
O
R
S
Ω
S
V
±5 V to ±15 V
ratio (∆V
CC±
/∆VIO)
V
O
R
S
Ω
S
t
(four am lifiers)
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
TL054I and TL054AI electrical characteristics at specified free-air temperature
TL054I, TL054AI
PARAMETERTEST CONDITIONS
p
= 0,
a
V
IO
ICR
OM+
OM–
A
VD
r
i
c
i
CMRR
k
SVR
I
CC
VO1/V
†
Full range is –40°C to 85°C.
‡
Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C, extrapolated to
TA = 25°C using the Arrhenius equation, and assuming an activation energy of 0.96 eV .
TL054I and TL054AI operating characteristics at specified free-air temperature
TL054I, TL054AI
PARAMETERTEST CONDITIONS
Positive slew rate
+
at unity gain
RL = 2 kΩ,CL = 100 pF,
Negative slew rate at
–
unity gain
t
r
t
f
n
V
N(PP)
I
n
THD
B
1
φ
m
†
Full range is –40°C to 85°C.
‡
For V
§
This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing on testing
or nontesting of other parameters.
¶
For V
Rise time–40°C5253
Fall time
Overshoot factor–40°C2419
Equivalent input noise
voltage
Peak-to-peak equivalent
input noise voltage
Equivalent input
noise current
Total harmonic distortion
Unity-gain bandwidth
= ±5 V, V
CC±
= ±5 V, V
CC±
‡
§
= ±1 V; for V
I(PP)
O(RMS)
= 1 V; for V
See Figure 1
= ±10 mV, R
V
CL = 100 pF,
See Figures 1 and 2
RS = 20 Ω,
See Figure 3
f = 1 kHz25°C0.010.01pA/√Hz
RS = 1 kΩ,
¶
f = 1 kHz
=
I
= 25 F,
p
=
I
=
p
= 25 F,
= ±15 V, V
CC±
= ±15 V, V
CC±
= 2 kΩ
2
f = 10 Hz25°C7575
f = 1 kHz25°C212145
f = 10 Hz to
10 kHz
RL = 2 kΩ,
=
L
=
L
= ±5 V.
I(PP)
O(RMS)
T
A
25°C15.41017.8
–40°C16.4818
85°C14817.3
25°C13.91015.9
–40°C14.7816.1
85°C13815.3
25°C5556
85°C6465
25°C5557
–40°C5153
85°C6465
25°C2419
85°C2419
25°C44µV
25°C0.003%0.003%%
25°C2.72.7
,
–40°C3.33.3MHz
85°C2.32.4
25°C6164
,
–40°C5962deg
85°C6164
= 6 V.
V
= ±5 VV
CC±
MINTYPMAXMINTYPMAX
= ±15 VUNIT
CC±
%
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
PARAMETER MEASUREMENT INFORMATION
V
CC+
–
V
NOTE A: CL includes fixture capacitance.
+
I
V
CC–
(see Note A)
C
L
V
O
R
L
Figure 1. Slew Rate, Rise/Fall Time,
and Overshoot Test Circuit
Overshoot
90%
10%
t
r
Figure 2. Rise-Time and Overshoot
Waveform
2 kΩ
V
CC+
–
+
V
CC–
R
S
R
S
V
O
V
I
100 Ω
NOTE A: CL includes fixture capacitance.
10 kΩ
V
CC+
–
+
V
CC–
(see Note A)
C
V
L
R
L
Figure 4. Unity-Gain Bandwidth and
Figure 3. Noise-Voltage Test Circuit
typical values
Typical values, as presented in this data sheet
Phase-Margin Test Circuit
Ground Shield
V
–
+
CC+
represent the median (50% point) of device
parametric performance.
pApA
V
CC–
input bias and offset current
At the picoamp-bias-current level typical of the
TL05x and TL05xA, accurate measurement of the
bias current becomes difficult. Not only does this
Figure 5. Input-Bias and Offset-Current Test Circuit
measurement require a picoammeter, but
test-socket leakages easily can exceed the actual device bias currents. To accurately measure these small
currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters
with bias voltages applied, but with no device in the socket. The device then is inserted in the socket, and a
second test that measures both the socket leakage and the device input bias current is performed. The two
measurements then are subtracted algebraically to determine the bias current of the device.
noise
Because of the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage
density is sample tested at f = 1 kHz. Texas Instruments also has additional noise-testing capability to meet
specific application requirements. Please contact the factory for details.