Texas Instruments THS4601ID, THS4601IDDA, THS4601CDDA, THS4601CD Datasheet

SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

WIDEBAND, FET-INPUT OPERATIONAL AMPLIFIER

THS4601

FEATURES

Gain Bandwidth Product: 180 MHz

D
D Slew Rate: 100 V/µs
D Maximum Input Bias Current: 100 pA
D Input Voltage Noise: 5.4 nV/√Hz
D Maximum Input Offset Voltage: 4 mV
D Input Impedance: 10

9

Ω || 10 pF

D Power Supply Voltage Range: ±5 to ±15 V
D Unity Gain Stable

APPLICATIONS

D

Wideband Photodiode Amplifier

D High-Speed Transimpedance Gain Stage
D Test and Measurement Systems
D Current-DAC Output Buffer
D Active Filtering
D High-Speed Signal Integrator
D High-Impedance Buffer

A SELECTION OF RELATED OPERATIONAL AMPLIFIER PRODUCTS

DESCRIPTION

The THS4601 is a high-speed, FET-input operational
amplifier designed for applications requiring wideband
operation, high-input impedance, and high-power
supply voltages. By providing a 180-MHz gain­bandwidth product, ±15-V supply operation, and
100-pA input bias current, the THS4601 is capable of
wideband transimpedance gain and large output signal
swing simultaneously. Low current and voltage noise
allow amplification of extremely low-level input signals
while still maintaining a large signal-to-noise ratio.

The characteristics of the THS4601 ideally suit it for use
as a wideband photodiode amplifier. Photodiode output
current is a prime candidate for transimpedance
amplification, an application of which is illustrated in
Figure 1. Other potential applications include test and
measurement systems requiring high-input impedance,
digital-to-analog converter output buffering, high-speed
integration, and active filtering.

DEVICE

OPA627
OPA637 ±15 80 135 4.5 Gain of +5 stable FET-input amplifier
OPA655 ±5 400 290 6 Unity-gain stable FET-input amplifier

λ

–V

V
(V)

±15

18 pF

Bias

S

C

= 0.7 pF

F

R

= 100 kΩ

F

_

+

BW

(MHz)

16 55 4.5 Unity-gain stable FET-input amplifier

THS4601

Figure 1. Wideband Photodiode

Transimpedance Amplifier

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

SLEW RATE

(V/µs)

RL = 1 kΩ

VOLTAGE NOISE

(nV√Hz

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)

100 kΩ TRANSIMPEDANCE BANDWIDTH

105
100

95
90
85
80
75
70

Transimpedance Gain – dB

Diode Capacitance: 18 pF

65

–3 dB Bandwidth: 4 MHz

60

0.1 1 10 100

DESCRIPTION

Frequency – MHz

Copyright  2002, Texas Instruments Incorporated

1

THS4601

SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

THS4601

D AND DDA PACKAGE

(TOP VIEW)

NC
IN–
IN+

V

S–

NC – No internal connection

1
2
3
4

8
7
6
5

NC
V

S+

OUT
NC

TERMINAL

NAME NO.

NC 1, 5, 8 These pins have no internal connection.
IN– 2 Inverting input of the amplifier
IN+ 3 Noninverting input of the amplifier
V

S–

OUT 6 Output of the amplifier
V

S+

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

Supply voltage, V
Supply voltage, V
Input voltage, V
Output current, I
Differential input voltage, V
Maximum junction temperature, T
Operating free-air temperature, T

S+
S–

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I

O

ID

J

C-suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A:

Terminal Functions

DESCRIPTION

4 Negative power supply

7 Positive power supply

†

16.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–16.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±4 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I-suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature, T

stg

–65°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from cases for 10 seconds 300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

±V

S

PACKAGE AND ORDERING INFORMATION

PRODUCT

THS4601CD SOIC surface mount 8D 0°C to 70°C 4601C

THS4601ID SOIC surface mount 8D –40°C to 85°C 4601I

THS4601CDDA SOIC surface mount with PowerPAD 8DDA 0°C to 70°C 4601C

THS4601IDDA SOIC surface mount with PowerPAD 8DDA –40°C to 85°C 4601I

NOTE: The THS4601 is available taped and reeled. Add an R suffix to the device type when ordering (e.g., THS4601IDR).

PACKAGE

PACKAGE

DESIGNATOR

SPECIFIED

TEMPERATURE RANGE

PACKAGE MARKING

PowerPAD is a trademark of Texas Instruments.

2

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PARAMETER

TEST CONDITIONS

g

d

d

SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

THS4601

electrical specifications: VS = ±15 V: RF = 250 Ω, RL = 1 kΩ and G = +2 (unless otherwise noted)

THS4601

TYP OVER TEMPERATURE

UNIT

dBc

dBc

12.6
to

–12.0

0°C to

70°C

12.5 to
–11.9

25°C 25°C

AC PERFORMANCE

G = +1, VO = 20 mVpp, RF = 0 Ω 440 Typ MHz
G = +2, VO = 40 mVpp, RF = 62 Ω 95 Typ MHz

Small-signal bandwidth

Gain-bandwidth product G > +10 180 Typ MHz
Bandwidth for 0.1 dB flatness G = +2, VO = 200 mV
Large-signal bandwidth G = +5, VO = 10 V
Slew rate, SR G = +5, 10 V Step 100 Typ V/µs
Rise/fall time, tr/t

Settling time, t
Harmonic distortion G = +2, f = 1 MHz, VO = 2V

n

2

r

3

Harmonic

Input voltage noise, V
Input current noise, I
Differential gain (NTSC, P AL) G = +2, RL = 150 Ω 0.02% Typ
Differential phase (NTSC, P AL) G = +2, RL = 150 Ω 0.08 Typ _

DC PERFORMANCE

Open-loop voltage gain G = –10, RL = 1 kΩ 105 94 92 90 Min dB
Input offset voltage, V
Average offset voltage drift VCM = 0 V ±10 ±10 Typ µV/_C
Input bias current, I
Average bias current drift VCM = 0 V 50 50 Typ pA/°C
Input offset current, I
Average offset current drift VCM = 0 V 5 5 Typ pA/°C

INPUT

Common-mode input range, V

Common-mode rejection ratio, CMRR 110 100 95 90 Min dB
Input impedance, ZidDifferential 109 || 3.5 Typ Ω || pF
Input impedance, ZicCommon-mode 109 || 6.5 Typ Ω || pF

s

Harmonic

f

0.01% G = +5, VO = 5 V Step 170 Typ ns

0.1% G = +5, VO = 5 V Step 135 Typ ns

n

n

IO

IB

IO

IC

G = +5, VO = 100 mVpp, RF = 500 Ω 36 Typ MHz
G = +10, VO = 200 mVpp,

RF = 1 kΩ

pp

pp

1.0 V Step 7 Typ ns

pp

RL = 100 Ω –65 Typ
RL = 1 kΩ –77 Typ
RL = 100 Ω –73 Typ
RL = 1 kΩ –96 Typ
f > 10 kHz 5.4 Typ nV/√Hz
f > 10 kHz 5.5 Typ fA/√Hz

VCM = 0 V 1.0 4.0 4.5 5.0 Max mV

VCM = 0 V 30 100 550 1100 Max pA

VCM = 0 V 2 100 200 300 Max pA

18 Typ MHz

5 Typ MHz
3 Typ MHz

±13.0

–40°C

to 85°C

12.4 to
–11.8

MIN/
MAX

Min V

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3

THS4601

PARAMETER

TEST CONDITIONS

SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

electrical specifications: VS = ±15 V: RF = 250 Ω, RL = 1kΩ and G = +2 (unless otherwise noted)
(continued)

THS4601

TYP OVER TEMPERATURE

25°C 25°C

OUTPUT

Voltage output swing RL = 1 kΩ

Current output, I
Closed-loop output impedance, Z

POWER SUPPLY

Specified operating voltage ±15 ±16.5 ±16.5 ±16.5 Max V
Maximum quiescent current 10.0 11.5 11.7 12.0 Max mA
Minimum quiescent current 10.0 8.5 8.3 8.0 Min mA

Power supply rejection

TEMPERATURE

Specified operating range, T
Thermal resistance, θ
8D: SO–8 170 Typ °C/W
8DDA: SO–8 with PowerPAD 66.6 Typ °C/W

O

Sourcing
Sinking

o

+PSRR 115 90 88 86 Min
–PSRR 115 90 88 86 Min

A

JA

RL = 20 Ω
G = +1, f = 1 MHz 0.1 Typ Ω

Junction-to-ambient

12.8 to

–13.4

–80 –60 –60 –59 Min

50 35 35 34 Min

–40 to 85 Typ °C

12.4 to
–13.1

0°C to

70°C

12.3 to
–13.0

–40°C

to 85°C

12.1 to
–12.8

MIN/
MAX

Min V

UNIT

mA

dB

4

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PARAMETER

TEST CONDITIONS

d

d

SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

THS4601

electrical specifications: VS = ±5 V: RF = 250 Ω, RL = 1 kΩ and G = +2 (unless otherwise noted)

THS4601

TYP OVER TEMPERATURE

UNIT

dBc

dBc

mA

2.7 to
–2.0

2.6 to
–3.3

0°C to

70°C

2.6 to
–1.9

2.5 to
–3.2

25°C 25°C

AC PERFORMANCE

G = +1, VO = 20 mV

Small-signal bandwidth

Gain-bandwidth product G > +10 180 Typ MHz
Bandwidth for 0.1 dB flatness G = +2, VO = 200 mV
Large-signal bandwidth G = +5, VO = 5 V
Slew rate, SR G = +5, 5 V Step 100 Typ V/µs
Rise/fall time, tr/t

Settling time, t
Harmonic distortion G = +2, f = 1 MHz, VO = 2V

n

2

r

3

Harmonic

Input voltage noise, V
Input current noise, I
Differential gain (NTSC and P AL) G = +2, RL = 150 Ω 0.02% Typ
Differential phase (NTSC and P AL) G = +2, RL = 150 Ω 0.08 Typ _

DC PERFORMANCE

Open-loop voltage gain G = –10, RL = 1 kΩ 105 94 92 90 Min dB
Input offset voltage, V
Average offset voltage drift VCM = 0 V ±10 ±10 Typ µV/_C
Input bias current, I
Average bias current drift VCM = 0 V 50 50 Typ pA/°C
Input offset current, I
Average offset current drift VCM = 0 V 5 5 Typ pA/°C

INPUT

Common-mode input range, V
Common-mode rejection ratio, CMRR 110 100 95 90 Min dB

Input impedance, ZidDifferential 109 || 3.5 Typ Ω || pF
Input impedance, ZicCommon-mode 109 || 6.5 Typ Ω || pF

OUTPUT

Voltage output swing RL = 1 kΩ

Current output, I
Closed-loop output impedance, Z

s

Harmonic

O

f

0.01% G = +5, VO = 2 V Step 140 Typ ns

0.1% G = +5, VO = 2 V Step 170 Typ ns

n

n

IO

IB

IO

IC

Sourcing
Sinking

o

G = +2, VO = 40 mV
G = +5, VO = 100 mV
G = +10, VO = 200 mV

1.0 V Step 8 Typ ns

RL = 100 Ω –74 Typ
RL = 1 kΩ –84 Typ
RL = 100 Ω –79 Typ
RL = 1 kΩ –94 Typ
f > 10 kHz 5.4 Typ nV/√Hz
f > 10 kHz 5.5 Typ fA/√Hz

VCM = 0 V 1.0 4.0 4.5 5.0 Max mV

VCM = 0 V 20 100 550 1100 Max pA

VCM = 0 V 1 100 200 300 Max pA

RL = 20 Ω
G = +1, f = 1 MHz 0.1 Typ Ω

pp
pp

pp

pp

pp

pp

pp

400 Typ MHz
100 Typ MHz

50 Typ MHz
18 Typ MHz

5 Typ MHz
6 Typ MHz

±2.2

2.9 to

–3.5
–65 –48 –48 –47 Min

45 30 30 29 Min

–40°C

to 85°C

2.5 to
–1.8

2.3 to
–3.1

MIN/
MAX

Min V

Min V

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5

THS4601

PARAMETER

TEST CONDITIONS

SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

electrical specifications: VS = ±5 V; RF = 250 Ω, RL = 1 kΩ and G = +2 (unless otherwise noted)
(continued)

THS4601

TYP OVER TEMPERATURE

25°C 25°C

POWER SUPPLY

Specified operating voltage ±5 ±16.5 ±16.5 ±16.5 Max V
Maximum quiescent current 9.6 11.2 11.4 11.7 Max mA
Minimum quiescent current 9.6 8.2 8.0 7.7 Min mA

Power supply rejection

TEMPERATURE

Specified operating range, T
Thermal resistance, θ
8D: SO–8 170 Typ °C/W
8DDA: SO–8 with PowerPAD 67 Typ °C/W

+PSRR 110 90 88 86 Min

–PSRR 110 90 88 86 Min

–40 to 85 Typ °C

JA

A

Junction-to-ambient

0°C to

70°C

–40°C

to 85°C

MIN/
MAX

UNIT

dB

6

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SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

THS4601

TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

Small-Signal Unity Gain Frequency Response 2
Large-Signal Unity Gain Frequency Response 3
Small-Signal Frequency Response, Gain = +2 4
Small-Signal Frequency Response, Gain = +5 5
Small-Signal Frequency Response, Gain = +10 6
Small-Signal Frequency Response, Gain = +100 7
Open-Loop Gain and Phase vs Frequency 8
Voltage Noise vs Frequency 9
Rejection Ratios vs Frequency 10
Closed-Loop Output Impedance vs Frequency 11
Large-Signal Pulse Response 12
Harmonic Distortion vs Frequency 13
Harmonic Distortion vs Output Voltage Swing 14
Slew Rate vs Output Voltage Step 15
Input Bias Current vs Input Common-Mode Range 16
Common-Mode Rejection Ratio vs Input Common-Mode Range 17
Open-Loop Gain vs Temperature 18
Input Bias Current vs Temperature 19
Input Offset Current vs Temperature 20
Offset Voltage vs Temperature 21
Quiescent Current vs Temperature 22
Output Current vs Temperature 23
Output Voltage Swing vs Temperature 24
Rejection Ratios vs Temperature 25

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THS4601

SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

TYPICAL CHARACTERISTICS

measurement conditions: T

SMALL-SIGNAL UNITY GAIN

FREQUENCY RESPONSE

8

Gain = 1,

6

RF = 0Ω,
RL = 1 kΩ,

4

PIN = –30 dBm

2

0

Gain – dB

–2
–4

–6
–8

100 k 1 M 10 M 100 M 1 G

SMALL-SIGNAL FREQUENCY RESPONSE,

10

8
6
4
2
0

Gain – dB

–2
–4

Gain = 2,

–6

RF = 62Ω,
RL = 1 kΩ,

–8

PIN = –30 dBm

–10

100 k 1 M 10 M 100 M 1 G

Frequency – Hz

Figure 2

GAIN = +2

Frequency – Hz

Figure 4

= 25°C, RL = 1 kΩ, VS = ±15 V (unless otherwise noted)

A

LARGE-SIGNAL UNITY GAIN

FREQUENCY RESPONSE

5

0

–5

–10

Gain – dB

–15

Gain = 1,
RF = 0 Ω,

–20

RL = 1 kΩ,
PIN = 0 dBm

–25

100 k 1 M 10 M 100 M

Frequency – Hz

Figure 3

SMALL-SIGNAL FREQUENCY RESPONSE,

20

15

10

5

0

Gain – dB

–5

Gain = 5,
RF = 500Ω,

–10

RL = 1 kΩ,
PIN = –30 dBm

–15

100 k 1 M 10 M 100 M 1 G

GAIN = +5

Frequency – Hz

Figure 5

SMALL-SIGNAL FREQUENCY RESPONSE,

GAIN = +10

25
20

15

10

5

Gain – dB

0

Gain = 10,

–5

RF = 1 kΩ,
RL = 1 kΩ,

–10

PIN = –30 dBm

–15

100 k 1 M 10 M 100 M 1 G

Frequency – Hz

Figure 6

8

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SMALL-SIGNAL FREQUENCY RESPONSE,

GAIN = +100

50

Gain = 100,

40

30

20

Gain – dB

10

0

–10

100 k 1 M 10 M 100 M 1 G

Frequency – Hz

RF = 5 kΩ,
RL = 1 kΩ,
PIN = –30 dBm

Figure 7

THS4601

SLOS388B – OCTOBER 2001 – REVISED JUNE 2002

TYPICAL CHARACTERISTICS

measurement conditions: T

OPEN-LOOP GAIN AND PHASE

110
100

90
80
70
60
50
40

Gain – dB

30
20
10

0

–10

10 100 1 k 10 k 100 k 1 M 10 M 100 M 1 G

REJECTION RATIOS

120

CMRR

100

80

PSRR–

vs

FREQUENCY

Frequency – Hz

Figure 8

vs

FREQUENCY

PSRR+

= 25°C, RL = 1 kΩ, VS = ±15 V (unless otherwise noted)

A

VOLTAGE NOISE

vs

90
60
30
0

–30
–60

–90
–120
–150
–180
–210
–240

–270

60

50

40

nV/ Hz

Phase – °

30

20

Voltage Noise –

10

0

10 100 1 k 10 k 100 k

FREQUENCY

Frequency – Hz

Figure 9

CLOSED-LOOP OUTPUT IMPEDANCE

vs

FREQUENCY

100

10

Ω

60

40

Rejection Ratio – dB

20

0

100 1 k 10 k 100 k 1 M

Frequency – Hz

Figure 10

LARGE-SIGNAL PULSE RESPONSE

3

2

1

0

–1

Output Voltage – V

–2

–3

0 0.2 0.4 0.6 0.8 1

t – Time – µs

Figure 12

10 M 100 M

1

Output Impedance –

0.1

0.01
100 k 1 M 10 M 100 M

Frequency – Hz

Figure 11

HARMONIC DISTORTION

vs

Gain = 2,
RF = 250 Ω,
RL = 1 kΩ,
VO = 2 V

PP

FREQUENCY

3rd Harmonic

2nd Harmonic

Frequency – Hz

–20

–30

–40

–50

–60

–70

Distortion – dBc

–80

–90

–100

100 k 1 M 10 M

Figure 13

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9