Texas Instruments OPA350, OPA350UAG4 Datasheet

FEATURES

D RAIL-TO-RAIL INPUT
D RAIL-TO-RAIL OUTPUT (within 10mV)
D WIDE BANDWIDTH: 38MHz
D HIGH SLEW RATE: 22V/µs
D LOW NOISE: 5nV/√Hz
D LOW THD+NOISE: 0.0006%
D UNITY-GAIN STABLE
D MicroSIZE PACKAGES
D SINGLE, DUAL, AND QUAD

APPLICATIONS

D CELL PHONE PA CONTROL LOOPS
D DRIVING A/D CONVERTERS
D VIDEO PROCESSING
D DATA ACQUISITION
D PROCESS CONTROL
D AUDIO PROCESSING
D COMMUNICATIONS
D ACTIVE FILTERS
D TEST EQUIPMENT

DESCRIPTION

The OPA350 series rail-to-rail CMOS operational
amplifiers are optimized for low voltage, single-supply
operation. Rail-to-rail input/output, low noise (5nV/√Hz

),
and high speed operation (38MHz, 22V/µs) make them
ideal for driving sampling Analog-to-Digital (A/D)
converters. They are also well suited for cell phone PA
control loops and video processing (75Ω drive capability)
as well as audio and general purpose applications. Single,
dual, and quad versions have identical specifications for
maximum design flexibility.

The OPA350 series operates on a single supply as low as

2.5V with an input common-mode voltage range that
extends 300mV below ground and 300mV above the
positive supply. Output voltage swing is to within 10mV of
the supply rails with a 10kΩ load. Dual and quad designs
feature completely independent circuitry for lowest
crosstalk and freedom from interaction.

The single (OPA350) and dual (OPA2350) come in the
miniature MSOP-8 surface mount, SO-8 surface mount,
and DIP-8 packages. The quad (OPA4350) packages are
the space-saving SSOP-16 surface mount and SO-14
surface mount. All a r e s p e c i f i e d f r o m − 4 0 °C to +85°C and
operate from −55°C to +150°C.

SPICE model available at www.ti.com

1
2
3
4
5
6
7

14
13
12
11
10

9
8

Out D

−In D

+In D
V

−

+In C

−In C

Out C

Out A

−In A

+In A

V+

+In B

−In B

Out B

OPA4350

SO−14

AD

BC

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

Out D

−In D

+In D

−

V

+In C

−In C

Out C
NC

Out A

−In A

+In A

+V

+In B

−In B

Out B

NC

OPA4350

SSOP−16

AD

BC

1
2
3
4

8
7
6
5

NC
V+
Output
NC

NC

−In
+In

V

−

OPA350

DIP−8, SO−8, MSOP−8

1
2
3
4

8
7
6
5

V+
Out B

−In B
+In B

OutA

−In A
+In A

−

OPA2350

DIP−8, SO−8, MSOP−8

A

B

All trademarks are the property of their respective owners.

OPA350
OPA2350
OPA4350

High-Speed, Single-Supply, Rail-to-Rail

OPERATIONAL AMPLIFIERS

MicroAmplifiertSeries

SBOS099C − SEPTEMBER 2000 − REVISED JANUARY 2005

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Copyright  2000−2005, Texas Instruments Incorporated

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments

semiconductor products and disclaimers thereto appears at the end of this data sheet.

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2

ABSOLUTE MAXIMUM RATINGS

(1)

Supply Voltage 7.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Signal Input Terminals

(2)

,Voltage (V−) − 0.3V to (V+) + 0.3V. . . . .

Current 10mA. . . . . . . . . . . . . . . . . . . . . .

Open Short-Circuit Current

(3)

Continuous. . . . . . . . . . . . . . . . . . . .

Operating Temperature Range −55°C to +150°C. . . . . . . . . . . . . . .

Storage Temperature Range −55°C to +150°C. . . . . . . . . . . . . . . . .

Junction Temperature +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Tem perature (soldering, 10s) +300°C. . . . . . . . . . . . . . . . . . . . .

(1)

Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only , an d
functional operation of the device at these or any other conditions
beyond those specified is not implied.

(2)

Input terminals are diode-clamped to the power-supply rails.
Input signals that can swing more than 0.3V beyond the supply
rails should be current limited to 10mA or less.

(3)

Short-circuit to ground, one amplifier per package.

ELECTROSTATIC DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe

proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to

complete device failure. Precision integrated circuits may be more
susceptible t o damage because very small parametric changes could
cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION

(1)

PRODUCT PACKAGE-LEAD

PACKAGE

DESIGNATOR

SPECIFIED

TEMPERATURE

RANGE

PACKAGE

MARKING

ORDERING

NUMBER

TRANSPORT

MEDIA, QUANTITY

SINGLE

OPA350EA/250 Tape and Reel, 250

OPA350EA

MSOP-8

DGK

−40°C to +85°C

C50

OPA350EA/2K5 Tape and Reel, 2500

OPA350UA Rails

OPA350UA

SO-8

D

−40°C to +85°C

OPA350UA

OPA350UA/2K5 Tape and Reel, 2500

OPA350PA DIP-8 P −40°C to +85°C OPA350PA OPA350PA Rails

DUAL

OPA2350EA/250 Tape and Reel, 250

OPA2350EA

MSOP-8

DGK

−40°C to +85°C

D50

OPA2350EA/2K5 Tape and Reel, 2500

OPA2350UA Rails

OPA2350UA

SO-8

D

−40°C to +85°C

OPA2350UA

OPA2350UA/2K5 Tape and Reel, 2500

OPA2350PA DIP-8 P −40°C to +85°C OPA2350PA OPA2350PA Rails

QUAD

OPA4350EA/250 Tape and Reel, 250

OPA4350EA

SSOP-16

DBQ

−40°C to +85°C

OPA4350EA

OPA4350EA/2K5 Tape and Reel, 2500

OPA4350UA Rails

OPA4350UA

SO-14

D

−40°C to +85°C

OPA4350UA

OPA4350UA/2K5 Tape and Reel, 2500

(1)

For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.

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3

ELECTRICAL CHARACTERISTICS: VS = 2.7V to 5.5V

Boldface limits apply over the temperature range, TA = −40°C to +85°C. VS = 5V.

All specifications at TA = +25°C, RL = 1kΩ connected to VS/2 and V

OUT

= VS/2, unless otherwise noted.

OPA350, OPA2350, OPA4350

PARAMETER TEST CONDITIONS MIN TYP

(1)

MAX UNIT

OFFSET VOLTAGE

Input Offset Voltage V

OS

VS = 5V ±150 ±500 µV

TA = −40°C to +85°C ±1 mV
vs Temperature TA = −40°C to +85°C ±4 µV/°C
vs Power-Supply Rejection Ratio PSRR VS = 2.7V to 5.5V , VCM = 0V 40 150 µV/V
TA = −40°C to +85°C VS = 2.7V to 5.5V , VCM = 0V 175 µV/V

Channel Separation (dual, quad) dc 0.15 µV/V

INPUT BIAS CURRENT

Input Bias Current I

B

±0.5 ±10 pA

vs Temperature See Typical Characteristics

Input Offset Current I

OS

±0.5 ±10 pA

NOISE

Input Voltage Noise, f = 100Hz to 400kHz 4 µVrms
Input Voltage Noise Density, f = 10kHz e

n

7 nV/√Hz
Input Current Noise Density, f = 100kHz 5 nV/√Hz
Current Noise Density, f = 10kHz i

n

4 fA/√Hz

INPUT VOLTAGE RANGE

Common-Mode Voltage Range V

CM

TA = −40°C to +85°C −0.1 (V+) + 0 .1 V

Common-Mode Rejection Ratio CMRR VS = 2.7V , −0.1V < VCM < 2.8V 66 84 dB

VS = 5.5V , −0.1V < VCM < 5.6V 74 90 dB

TA = −40°C to +85°C VS = 5.5 V, −0.1V < VCM < 5.6V 74 dB

INPUT IMPEDANCE

Differential 1013 || 2.5 Ω || pF
Common-Mode 1013 || 6.5 Ω || pF

OPEN-LOOP GAIN

Open-Loop Voltage Gain A

OLRL

= 10kΩ, 50mV < VO < (V+) −50mV 100 122 dB

TA = −40°C to +85°C RL = 10kW, 50mV < VO < (V+) −50mV 100 dB

RL = 1kΩ, 200mV < VO < (V+) −200mV 100 120 dB

TA = −40°C to +85°C RL = 1kW, 200mV < VO < (V+) −200mV 100 dB

FREQUENCY RESPONSE CL = 100pF

Gain-Bandwidth Product GBW G = 1 38 MHz
Slew Rate SR G = 1 22 V/µs
Settling Time: 0.1% G = ±1, 2V Step 0.22 µs

0.01% G = ±1, 2V Step 0.5 µs

Overload Recovery Time VIN • G = V

S

0.1 µs

Total Harmonic Distortion + Noise THD+N RL = 600Ω, VO = 2.5V

PP

(2)

, G = 1, f = 1kHz 0.0006 %

Differential Gain Error G = 2, RL = 600Ω, VO = 1.4V

(3)

0.17 %

Differential Phase Error G = 2, RL = 600Ω, VO = 1.4V

(3)

0.17 deg

(1)

VS = +5V .

(2)

V

OUT

= 0.25V to 2.75V .

(3)

NTSC signal generator used. See Figure 6 for test circuit.

(4)

Output voltage swings are measured between the output and power supply rails.

(5)

See typical characteristic curve, Output Voltage Swing vs Output Current.

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4

ELECTRICAL CHARACTERISTICS: VS = 2.7V to 5.5V (continued)

Boldface limits apply over the temperature range, TA = −40°C to +85°C. VS = 5V.

All specifications at TA = +25°C, RL = 1kΩ connected to VS/2 and V

OUT

= VS/2, unless otherwise noted.

OPA350, OPA2350, OPA4350

PARAMETER UNITMAXTYP

(1)

MINTEST CONDITIONS

OUTPUT

Voltage Output Swing from Rail

(4)

V

OUT

RL = 10kΩ, AOL ≥ 100dB 10 50 mV

TA = −40°C to +85°C RL = 10kW, AOL  100dB 50 mV

RL = 1kΩ, AOL ≥ 100dB 25 200 mV

TA = −40°C to +85°C RL = 1kW, AOL  100dB 200 mV

Output Current I

OUT

±40

(5)

mA

Short-Circuit Current I

SC

±80 mA

Capacitive Load Drive C

LOAD

See Typical Characteristics

POWER SUPPL Y

Operating Voltage Range V

S

TA = −40°C to +85°C 2.7 5.5 V

Minimum Operating Voltage 2.5 V
Quiescent Current (per amplifier) I

Q

IO = 0 5.2 7.5 mA

TA = −40°C to +85°C IO = 0 8.5 mA

TEMPERATURE RANGE

Specified Range −40 +85 °C
Operating Range −55 +150 °C
Storage Range −55 +150 °C
Thermal Resistance q

JA

MSOP-8 Surface Mount 150 °C/W
SO-8 Surface Mount 150 °C/W
DIP-8 100 °C/W
SO-14 Surface Mount 100 °C/W
SSOP-16 Surface Mount 100 °C/W

(1)

VS = +5V .

(2)

V

OUT

= 0.25V to 2.75V .

(3)

NTSC signal generator used. See Figure 6 for test circuit.

(4)

Output voltage swings are measured between the output and power supply rails.

(5)

See typical characteristic curve, Output Voltage Swing vs Output Current.

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5

TYPICAL CHARACTERISTICS

All specifications at TA = +25°C, VS = +5V , and RL = 1kΩ connected to VS/2, unless otherwise noted.

0.1 1

160
140
120
100

80
60
40
20

0

0

−

45

−

90

−

135

−

180

Phase (

_

)

Frequency (Hz)

10 100 1k 10k 100k 1M 10M 100M

G

φ

OPEN-LOOP GAIN/PHASE vs FREQUENCY

Voltage Gain (dB)

INPUT VOLTAGE AND CURRENT NOISE

SPECTRAL DENSITY vs FREQUENCY

100k

10k

1k

100

10

1

10k

1k

100

10

1

0.1

VoltageNoise (nV√Hz)

Frequency (Hz)

10 100 1k 10k 100k 1M 10M

Current Noise (fA√Hz)

Voltage Noise

Current Noise

TOTAL HARMONIC DISTORTION + NOISE

vs FREQUENCY

1

0.1

0.01

0.001

0.0001

THD+N (%)

Frequency (Hz)

10 100 1k 10k 100k

RL= 600Ω

G = 100, 3VPP(VO=1Vto4V)

G=10,3VPP(VO=1Vto4V)

G = 1, 3VPP(VO=1Vto4V)
Input goes through transition region

G = 1, 2.5VPP(VO= 0.25Vto 2.75V)
Input does NOT go through transition region

POWE RSUPPLYAND COMMON−MODE

REJECTION RATIOvs FREQUENCY

100

90
80
70
60
50
40
30
20
10

0

PSRR,CMRR (dB)

Frequency(Hz)

10 100 1k 10k 100k 1M 10M

PSRR

CMRR

(V

S

=+5V

V

CM

=−0.1V to 5.1V)

CHANNEL SEPARATION vs FREQUENCY

Frequency (Hz)

Channel Separation (dB)

140
130
120
110
100

90
80
70
60

10010 1k 1M100k10k 10M

Dual and quad devices.

HARMON ICDISTORTION + NOISE vs FREQUEN CY

1

(−40dBc)

0.1

(−60dBc)

0.01

(−80dBc)

0.001

(−100dBc)

0.0001

(−120dBc)

Harmonic Distortion (%)

Frequency (Hz)

1k 10k 100k 1M

G=1
VO=2.5V

PP

RL= 600Ω

3rd−Harmonic

2nd−Harmonic

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6

TYPICAL CHARACTERISTICS (continued)

All specifications at TA = +25°C, VS = +5V , and RL = 1kΩ connected to VS/2, unless otherwise noted.

DIFFERENTIAL GAIN/PHASE vs RESISTIVE LOAD

0.5

0.4

0.3

0.2

0.1

0

Differential Gain (%)

Differential Phase (

_

)

Resistive Load (Ω)

0 100 200 300 500400 600 800700 900 100

0

G=2
V

O

=1.4V
NTSC Signal Generator
SeeFigure6fortestcircuit.

Phase

Gain

COMMON−MODEAND POWER−SUPPLY REJECTION RATIO

vs TEMP ERATUR E

100

90

80

70

60

CMRR (dB)

110

100

90

80

70

PSRR(dB)

Temperature (_C)

−75 −50 −25 0 25 50 75 100 125

CMRR, VS=5.5V

(VCM=−0.1V to +5.6V)

CMRR, VS=2.7V

(V

CM

= −0.1Vto +2.8V)

PSRR

QUIESCENT CURRENT AND

SHORT−CIRCUIT CURRENT vs TEMPERATURE

Temperature (_C)

Quiescent Current (mA)

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

100
90
80
70
60
50
40
30

Short−Circu itCurrent (mA)

−75−50−

25 0 25 50 75 100 125

I

Q

+I

SC

−

I

SC

OPEN−LOOP GAIN vs TEMPERATURE

130

125

120

115

110

Open−Loop Gain (dB)

Temperature (_C)

−

75−50−250255075100125

RL=600

Ω

RL=1k

Ω

RL=10k

Ω

SLEW RATE vs TEMPERATURE

Temperature (_C)

Slew Rate (V/

µ

s)

40
35
30
25
20
15
10

5
0

−75−50−

250 255075100125

Negative Slew Rate

Positive Slew Rate

QUIESCENT CURRENT vs SUPPLY VOLTAGE

Supply Voltage (V)

QuiescentCurrent (mA)

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

Per Amplifier

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7

TYPICAL CHARACTERISTICS (continued)

All specifications at TA = +25°C, VS = +5V , and RL = 1kΩ connected to VS/2, unless otherwise noted.

INPUT BIAS CURRENT vs TEMPERATURE

Input Bias Current (pA)

Temperature (_C)

−75−50−

25 0 25 50 75 100 125

1k

100

10

1

0.1

CLOSED−LOOP OUTPUT IMPEDANCE vs FREQUENCY

Frequency (Hz)

Output Impedance (

Ω

)

100

10

1

0.1

0.01

0.001

0.0001
1 10 100 1k 10k 100k 1M 10M 100

M

G = 100

G=10

G=1

OUTPUT VOLTAGE SWING vs OUTPUT CURRENT

Output Current (mA)

Output Voltage (V)

V+

(V+)−1

(V+)−2

(V−)+2

(V−)+1

(V−)

0

±

10

±

20

±

30

±

4

0

+25_C

+125_C

−55_

C

−55_

C

+125_C

+25_C

Depending on circuit configuration
(including closed−loop gain) performance
may be degraded in shaded region.

INPUT BIAS CURRENT

vs INPUT COMMON−MODE VOLTAGE

Common−Mode Voltage (V)

Input Bias Current (pA)

1.5

1.0

0.5

0.0

−

0.5

−0.5 0.0 0.5 1.0 2.01.5 2.5 3.0 3.5 4.0 5.04.5 5.5

MAXIMUM OUTPUT VOLTAGE vs FREQUENCY

100M1M 10M

Frequency (Hz)

100k

6

5

4

3

2

1

0

Output Voltage (V

PP

)

Maximum output
voltage without
slewrate−induced
distortion.

VS=2.7V

VS=5.5V

OPEN−LOOPGAIN vs OUTPUT VOLTAGE SWING

140
130
120
110
100

90
80
70
60

Open−Loop Gain (dB)

Output Voltage Swing from Rails (mV)

0204060 10080 120 160140 180 200

I

OUT

=4.2mA

I

OUT

=250µA

I

OUT

=2.5mA

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8

TYPICAL CHARACTERISTICS (continued)

All specifications at TA = +25°C, VS = +5V , and RL = 1kΩ connected to VS/2, unless otherwise noted.

Offset Voltage (µV)

OFFSET VOLTAGE

PRODUC TIONDISTRIBUTION

18
16
14
12
10

8
6
4
2
0

Percent of Amp lifiers (%)

−500

−

450−400−350

−300

−

250−200−150−100

−

50

0

50

100

150

200

250

300

350

400

450

500

Typ ical distributio nof

packaged units.

SMALL−SIGNAL OVERSHOOT vs LOAD CAPACITANCE

1M100 1k 10k 100k

Load Capacitance (pF)

10

80
70
60
50
40
30
20
10

0

Overshoot (%)

G=1

G=−1

G=±10

SMALL−SIGNALSTEP RESPONSE

C

L

= 100pF

100ns/div

50mV/div

Offset VoltageDrift (µV/_ C)

OFFSET VOLTAGE DRIFT

PRODUCTION DISTRIBUTION

20
18
16
14
12
10

8
6
4
2
0

0123456789101112131415

Percent of Amplifiers (%)

Typicalproduction
distribution of
packagedunits.

SETTLING TIME vs CLOSED−LOOP GAIN

10

1

0.1

Settling Time (

µ

s)

Closed−Loop Gain (V/V)

−

1

−

10

−

100

0.1%

0.01%

LARGE−SIGNALSTEP RESPONSE

C

L

= 100pF

200ns/div

1V/div