Texas Instruments ISO5852SDWEVM-017 User Manual

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User's Guide
SLLU298–May 2018
ISO5852SDW Driving and Protecting SiC and IGBT Power
This user's guide describes the characteristics, operation, and use of the ISO5852SDWEVM-017 Evaluation Module (EVM). This TI EVM provides driving and protection for popular Silicon Carbide (SiC) MOSFET and Si IGBT Power Modulues. A complete schematic diagram, printed-circuit board layouts, and bill of materials are included in this document.
Contents
1 Overview...................................................................................................................... 3
1.1 Features.............................................................................................................. 3
1.2 Applications.......................................................................................................... 3
1.3 Description........................................................................................................... 4
2 Test Setup and Results ..................................................................................................... 9
2.1 Before You Begin .................................................................................................. 9
2.2 Equipment ......................................................................................................... 10
3 Board Layout................................................................................................................ 18
4 Schematic and Bill of Materials........................................................................................... 25
4.1 Schematic .......................................................................................................... 25
4.2 Bill of Materials .................................................................................................... 31
List of Figures
1 ISO5852SDWEVM-017 EVM Block Diagram............................................................................ 6
2 ISO5852SDWEVM-017 Top View......................................................................................... 8
3 ISO5852SDWEVM-017 Mounted on Top of Power Module ........................................................... 9
4 Power Up and Bias Supply Voltages VU and VL Test Setup ........................................................ 11
5 Test Setup for Input and Output Switching Waveforms............................................................... 12
6 Major Input and Output Waveforms Using Output Overlapping Prevention Feature.............................. 14
7 Thermistor Amplifier Test Setup.......................................................................................... 15
8 Input Bus Voltage Sense Amplifier Test Setup......................................................................... 16
9 Safety Isolated Regions between High and Low Voltage Board Areas............................................. 17
10 Top View of the Board..................................................................................................... 18
11 Bottom View Of The Board ............................................................................................... 19
12 Component Placement .................................................................................................... 20
13 Top Layer ................................................................................................................... 21
14 Signal Layer 1 .............................................................................................................. 22
15 Signal Layer 2 .............................................................................................................. 23
16 Bottom Layer................................................................................................................ 24
17 Electrical Schematic of ISO5852SDWEVM-017 ....................................................................... 26
18 Electrical Schematic with Functional Blocks Outlined................................................................. 27
19 Waveforms with Overlapping Enabled .................................................................................. 28
20 Rise Time and Propagation Delay Waveforms with 10 nF Load .................................................... 29
21 Fall Time and Propagation Delay Waveforms with 10 nF Load...................................................... 30
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List of Tables
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1 Electrical Specifications..................................................................................................... 4
2 Voltages and Current During Power Up Test........................................................................... 12
3 Function Generator Settings.............................................................................................. 13
4 Oscilloscope Settings...................................................................................................... 13
5 Themistor Amplifier Output Signals...................................................................................... 15
6 Input Bus Voltage Sense Amplifier Outputs ............................................................................ 16
7 Bill of Materials ............................................................................................................. 31
Trademarks
All trademarks are the property of their respective owners.
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1 Overview
The ISO5852SDWEVM-017 is a compact, dual channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for half-bridge SiC MOSFET and Si IGBT Power Modules housed in 150-mm × 62-mm × 17-mm packages.
This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer bias supplies.
Isolated temperature and input rail monitoring is provided by 5-kVrms isolated amplifiers AMC1301. Compact form factor 100-mm × 62-mm × 6.6-mm, excluding connector height, allows direct connection to
standard 62-mm half-bridge modules.
1.1 Features
This EVM supports the following features:
20-A peak split sink and source drive current to optimize turn on and turn off switching time
Two, 2-W output bias supplies with undervoltage lockout (UVLO) and overvoltage lockout (OVLO)
protection
Turn ON and turn OFF drive voltages can be programmed independently from 12 V to 21 V and from
–3.3 V to –7 V respectively by using two input supplies from 3.3 V to 5.3 V
Robust noise-immune solution with CMTI >100 V/ns
Supports 5-kVrms Reinforced Isolation for input rail up to 1700-V
Programmable Short-circuit sensing and Soft Turn-OFF protection by de-saturation circuit
2-A Active Miller Clamp
Output Short Circuit Clamp
Fault feedback with reset
Temperature and input rail monitoring
Overview
1.2 Applications
This EVM is used in the following applications:
Solar inverters
Motor drives
HEV and EV chargers
Wind turbines
Transportation
UPS
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Overview
1.3 Description
Compact driver board ISO5852SDWEVM-017 supports SiC power modules by reducing parasitics, minimizing switching loss and EMI and providing full required protection and diagnostics features.
1.3.1 Specification
Electrical parameters of the board are shown in Table 1.
SUPPLY VOLTAGES AND CURRENTS
VCC Primary supply voltage 4.5 5.0 5.5 V IVCCQ Primary quiescent current IN+, IN- low 30 mA
IVCCS Primary supply current VCCUR Vcc rising UVLO threshold 4.5 4.6 V
VCCUF Vcc falling UVLO threshold 4.2 4.3 V VCCUH Vcc UVLO hysteresis 0.2 V VCCOR Vcc rising OVLO threshold 5.7 5.8 V VCCOF Vcc falling OVLO threshold 5.4 5.5 V VCCOH Vcc UVLO hysteresis 0.2 V VCC2U,
VCC2L VCC2U,
VCC2L
DRIVE CURRENT AND POWER
IOH Peak source current CLOAD = 10nF 15 20 A IOL Peak sink current CLOAD = 10nF 15 20 A PDRV Drive power per channel At 25C 2.0 W
INPUT/OUTPUT SIGNALS
VINR, VRSTR INL+, INU+, RST rising threshold
VINF, VRSTF INL+, INU+, RST falling threshold
VINH, VRSTH INL+, INU+, RST hysteresis VFLU, VFLL FL, FU Fault voltage IFLT = 5 mA 0.2 V VFLU, VFLL FL, FU Fault current VFLTH F high level At VCC = 4.5 V 4.4 4.5 V
VFLTL F low level At VCC = 4.5 V 0.1 V ATEMP Thermistor monitor gain 8.2 ARAIL Input rail monitor gain 8.2
TIMING PARAMETERS
TRISE Drive output rise time CLOAD = 10nF 30 ns TFALL Drive output fall time CLOAD = 10nF 34 ns TPROP Propagation delay CLOAD = 100nF 130 150 ns TSKEW Pulse skew 20 ns TGLITCH Input glitch filter 20 30 40 ns TUVLO UVLO recovery delay 50 µs TOVOL OVLO recovery delay 50 µs
Turn ON drive voltages
Turn OFF drive voltages
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Table 1. Electrical Specifications
PARAMETER TEST CONDITION MIN NOM MAX UNIT
FSW = 10kHz, CLOAD = 10nF
Transformer 750342879
Transformer 750313734
Internal pullup current
15 17 19 V
–5.9 –5 –4.7 V
0.3 × VCC
210 mA
0.7 × VCC
0.15 × VCC
100
V
V
V
µA
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Overview
Table 1. Electrical Specifications (continued)
PARAMETER TEST CONDITION MIN NOM MAX UNIT
SHORT CIRCUIT PROTECTION
Can be
VDESAT Nominal desaturation threshold
TDESATBLN K
TDS90 Response time to 90% VOUTHL CLOAD = 10nF 553 760 ns TDS10 Response time to 10% VOUTHL CLOAD = 10nF 2 3.5 µs ICHARGE Capacitor charge current 0.42 0.5 0.58 mA IDISCHARGE Capacitor discharge current 9 14 mA VCLAMP Miller clamp threshold 1.6 2.1 2.5 V ICLAMP Miller clamp current 4 A
ISOLATION
CMTI CMTI 100 V/ns VISO Withstand isolation voltage Reinforced, 60s 5.0 kVrms CI Barrier capacitance 20 pF TA Operating Ambient Temperature -40 25 125 oC
SIZE
Board size Without connector 100 x 62 x 6.6 mm
Blanking time 310 400 480 ns
programmed by resistors down to 4 V
8.3 9.0 9.5 V
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Inv Rec
+15 V
Vdrp1 S2 Vdrn1
DC-DC
V
CC
Rx Tx
GND1 V
EE2
RST
RDY
FLT
IN+
IN±
V
CC1
V
CC2
DESAT
GND2
OUTH
OUTL
CLAMP
V
CC1
V
CC1
UVLO1
Mute
Decoder
Q S
RQ
V
CC1
V
CC1
Gate Drive
and
Encoder
Logic
UVLO2
2 V
9 V
500 µA
STO
V
CC2
Ready
Fault
GND1 V
EE2
RST
RDY
FLT
IN+
IN±
V
CC1
V
CC2
DESAT
GND2
OUTH
OUTL
CLAMP
V
CC1
V
CC1
UVLO1
Mute
Decoder
Q S
RQ
V
CC1
V
CC1
Gate Drive
and
Encoder
Logic
UVLO2
2 V
9 V
500 µA
STO
V
CC2
Ready
Fault
10
10
Vdrp2
Vdrn1
V
CC
Logic Block
Inv Rec
+15 V
Vdrp1 S1 Vdrn1
DC-DC
V
CC
Rx Tx
Reinforced Isolation
10
10
S1
S2
V
CC
5 V
AMC1301
Vdrn2
V
CC
±5 V
Vdrp1
BUS_P
BUS_N
VCC_5V
GND
INU+
FU
RST
INL+
FL
F
TRO_P
TRO_N
DU
SU
GU
DL
SL
GL
TR_N
DU
TR_P
± 5 V
Overview
1.3.2 Block Diagram
The ISO5852SDWEVM-017 board block diagram is shown in Figure 1.
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Figure 1. ISO5852SDWEVM-017 EVM Block Diagram
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It includes two isolated channels with the following key functional blocks:
20A source/sink 5.7 kVrms Isolated driver using ISO5852SDW driver IC
Split rail bias supply using two 424 kHz transformer drivers SN6505B to generate separately +17 V rail for turn ON and -5 V rail for turn OFF
Input logic block with shoot-through prevention
Output protection and diagnostic block
Analog amplifiers AMC1301 to monitor temperature inside the module and input voltage rail with 5.0 kVrms isolation
1.3.3 Isolated Gate Driver ISO5852S
ISO5852SDW, isolated driver in SOIC-16DW package with 8.0mm creepage and clearance providing
5.7kVrms reinforced isolation, includes all main short circuit protection features. ISO5852SDW driver IC
employs TI proprietary high voltage, low propagation delay, CMTI immune capacitive isolation technology. The list of isolation safety certifications from agencies like VDE, CSA, UL and CQC is provided in related datasheet. Short, 76 ns propagation delay with only 20 ns skew allows accurate control of power devices.
Figure 1 includes block diagram of ISO5852SDW driver.
Primary side voltage Vcc1 is controlled by internal UVLO1 circuit with 2.25Vmax rising threshold and
1.7Vmin falling threshold. Inverting and non-inverting input signals IN- and IN+ have CMOS thresholds
derived from Vcc1 voltage: 0.7 x Vcc1 max rising and 0.3 x Vcc1 min falling accordingly. Secondary side voltage Vcc2 can go up to 35V abs. max. Turn ON drive voltage between Vcc2 and GND2 pins is controlled by internal UVLO2 circuit with 13Vmax rising threshold and 9.5V min falling threshold. The split sink/source output allows setting optimal turn ON and turn OFF time by selecting separate gate resistors between driver output and gate of power device. This driver has all necessary short circuit protection features including desaturation current sensing, soft short circuit turn OFF, Miller gate clamp, fault, power ready and reset signals.
Overview
1.3.4 Split-Rail Bias Supply using SN6505B
Split rail bias supply generates 17V turn ON, and -5V turn OFF voltages using two push-pull transformer drivers SN6505B operating at 424kHz and housed in 6-pin small SOT-23 package.
The SN6505B is supplied through Vcc terminal from external source in the range from 2.25 to 5.5V. Input voltage is controlled by UVLO circuit having rising threshold 2.25Vmax and falling threshold 1.7V min. Internal oscillator operates at 424kHz typical frequency within range from 363 kHz min. to 517 kHz max.. The SN6505 employs spread spectrum clocking technique to minimize EMI. The output stage includes 1A push-pull switches rated up to 16 V abs. max. The switches are protected by current limit circuit tripped at
1.7 A typ. level. The device also protected by thermal shutdown circuit triggered at 168 ºC typical
threshold and returning back to normal operation at 150 ºC typical. Additional features include soft start and Enable signal. Because there is no closed feedback loop in this inexpensive bias supply solution, it operates like DC-DC transformer and requires low tolerance primary voltage to maintain output voltages within ±10% range.
1.3.5 Input Logic
Input logic block fulfills the following functions:
Provides additional UVLO and OVLO protection of secondary side drive voltages using sensing on primary side Vcc based on window comparator TPS3700
Generates separate fault signals for each channel when the short circuit occurs along with general system fault signal using AND logic CMOS IC SN74AHC1G08QDBVRQ1
Generates combined Reset signal output for both isolated channels
Provides isolated differential output signals from temperature and input rail monitoring circuits using isolated amplifiers AMC1301
Can be set for driver outputs overlapping prevention mode by having shunt resistors R48 and R52 in place. To allow outputs overlapping simply remove shunt resistors R48 and R52.
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Overview
1.3.6 Output Protection and Diagnostic
The output boost and protection blocks fulfill the following functions:
Boost sink and source currents up to 20 A typical
Determine short circuit conditions using Vds sensing
Provide analog isolated input rail sensing signal using AMC1301 amplifier
Provide analog isolated temperature monitoring using thermistor inside the module and AMC1301 amplifier
1.3.7 Isolated Differential Amplifier AMC1301
The AMC1301 is a precision, isolated amplifier with an output separated from the input circuitry by an isolation barrier providing protection from electromagnetic and electrical noise in the system.
The input of the AMC1301 device is optimized for sensing signals in ±250 mV range with high immunity to common mode noise. The amplifier is housed in wide body SOIC-8DWV package with 9 mm creepage and clearance.
1.3.8 Board Views
Top view of the driver board ISO5852SDWEVM-017 is shown in Figure 2. Figure 3 shows the driver EVM soldered on top of power module.
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Figure 2. ISO5852SDWEVM-017 Top View
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Test Setup and Results
Figure 3. ISO5852SDWEVM-017 Mounted on Top of Power Module
2 Test Setup and Results
Test setup and related waveforms presented in User's Guide are for ISO5852SDWEVM-017 EVM EXCLUDING any user provided power modules attached to backside of the EVM. Capacitive load presented by power module is emulated by 10 nF capacitors C16 and C36. When EVM is attached to and evaluated with power module, capacitors C16 and C36 should be removed.
2.1 Before You Begin
When starting to evaluate and test the ISO5852SDWEVM-017 EVM, it will typically be in a stand-alone configuration, separate from power module. This EVM does not internally generate high voltages or high temperatures.
In the start-up configuration, there will be no high voltage or high temperature capable of presenting the user with an electrical shock hazard or burn resulting from elevated temperature risks provided the EVM is used within its electrical load rating limits established in Table 1.
To minimize risk of electric shock hazard always follow safety practices normally followed in a development laboratory. Refer to TI’s EVM High Voltage guideline accompanying this EVM.
WARNING
However, to evaluate isolated input rail amplifier voltages in accordance with the described below test procedure 2.2.4, which requires the addition of an external power source with maximum rating of 300 VDC, high voltage may be accessible between board test points DU and SL.
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Test Setup and Results
To minimize risk of electrical shock hazard, always follow all high voltage safety rules and regulations while operating electrical equipment!
When evaluating ISO5852SDWEVM-017 with EVM attached to its intended vendor provided power module as part of the system level measurements and assessments, the power module will have accessibility of high voltage and high temperatures that impact the EVM’s operating conditions as well. High voltages with transients up to 1500Vpk can appear between isolated areas of the EVM, bounded as illustrated in Figure 9. The externally provided power module also radiates heat that indirectly provides air flow and convection that can elevate the temperature of EVM board.
The EVM provides isolated thermal dissipation diagnostic signals available at connector J1 shown in
Figure 9, which measure high voltage input rail and thermistor temperatures inside the external power
module. Both BUS_P (pin 17) to BUS_N (pin 18) and TRO_P (pin 20) to TRO_N (pin 19) diagnostic signals must be strictly monitored to assure both high voltage and thermal protective features are being utilized.
The user is required to provide necessary interface controller hardware to shut down and deenergize the system immediately if BUS_P to BUS_N signal exceeds 1.85 VDC, or signal TRO_P to TRO_N drops below 0.135 VDC.
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WARNING
To minimize risk of fire hazard, it is critical to assure that the external power module’s electrical and thermal ratings are never exceeded as published by the external power module’s manufacturer’s datasheet, and the maximum temperature of any external power module should never exceed 130oC.
2.2 Equipment
Power Supplies – At least up to 6-V and 1-A power supply for powering EVM, for example: BK Precision, series 1715 – At least up to 300-V and 10-mA power source for testing bus isolated sense amplifier within EVM
Function Generator and accessories – One 2-channel function generator, for example: Tektronix AFG3102 – Two standard 50-BNC coaxial cables – Two 50-BNC male to female feed-thru terminators, for example: Tektronix 011-0049-02
Oscilloscope and accessories – Oscilloscope 500-MHz or higher with at least 4 channels, for example: Tektronix DPO7104 – Four at least 500-MHz bandwidth passive voltage probes, for example: P6139A
Six Digital Multi-Meters (DMM), for example Fluke 187
Other – 20-wire flat cable with receptacle 71600-120LF from FCI with opposite end wired to PCB with
related test points – Wires 7 to 10 inch long with clips on both ends to make jumpers on some test points – Resistance decade box, for example 72-7270 from Tenma
Test procedure includes four main tests with different test setups
1. Power up and bias supply voltages test
2. Input and output pulse switching waveforms test
3. Thermistor isolated amplifier input and output signal test
4. Bus voltage sense isolated amplifier input and output signal test
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All test setups shown in the following figures assume the flat test cable with receptacle and test points is attached to the connector J1 of the EVM.
2.2.1 Power UP Test
Test setup for power up test is shown in Figure 4. For these tests digital multi-metersfor DC voltage measurements are set auto-range. MM1 is set for DC current measurements with expected range up to 500 mA. Here and in all test setups below, red arrows indicate positive terminals and black arrows indicate return terminal.
Test Setup and Results
Figure 4. Power Up and Bias Supply Voltages VU and VL Test Setup
Before start testing make sure to follow all electrical safety and ESD protection requirements implemented at your company!
1. Enable power supply PS1
2. Gradually increase the voltage at PS1 and monitor voltage using MM4 and current using MM1
3. Verify measured voltage and current in accordance to Table 2. If current or voltage is outside the specified range, stop increasing the voltage at PS1 and return to initial stage
4. Gradually reduce the voltage at PS1 to 0 V and disable it
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Test Setup and Results
Measured voltages and current should be within range shown in Table 2.
Table 2. Voltages and Current During Power Up Test
MM4 (Vcc) MM1 (Icc) MM2 (+VU) MM3 (-VU) MM5 (+VL) MM6 (-VL)
2.95 V – 3.05 V < 30 mA < ±0.1 V < ±0.1 V < ±0.1 V < ±0.1 V
4.65 V – 4.75 V 130 mA – 145 mA 15.5 V – 16.5 V 4.5 V – 5.2 V 15.4 V – 16.4 V 4.5 V – 5.2 V
4.95 V – 5.05 V 135 mA – 150 mA 16.8 V – 17.5 V 5.0 V – 5.5 V 16.6 V – 17.4 V 5.0 V – 5.5 V
5.4 V – 5.45 V 140 mA – 155 mA 17.5 V – 19.0 V 5.5 V – 6.2 V 17.3 V – 18.8 V 5.5 V – 6.2 V
5.7 V < MM4 < 6 V < 30 mA < ±0.1 V < ±0.1 V < ±0.1 V < ±0.1 V
2.2.2 Input and Output Switching Waveforms Test
Test setup for switching waveforms is shown in Figure 5.
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Figure 5. Test Setup for Input and Output Switching Waveforms
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Function generator settings are shown in Table 3.
Test Setup and Results
Table 3. Function Generator Settings
CHANNEL MODE FREQ. WIDTH DELAY AMPL. OFFSET
A (Ch.1) Pulse 10 kHz 80 µs 0 4 Vpp 2.0 V 50 B (Ch.2) Pulse 10 kHz 80 µs 50 µs 4 Vpp 2.0 V 50
LOAD
IMPED.
FREQUENC
Y SET
Ch1 = Ch2,
ON
Oscilloscope settings are shown in Table 4.
Table 4. Oscilloscope Settings
CHANNEL
Ch. 1(red) 10 V/div Ch. 2(blue) 3 V/div Ch. 2 Ch. 3(pink) 3 V/div
Ch. 4(green) 10 V/div
VERTICAL
SCALE
HORIZONTAL
SCALE
50 µs/div
BANDWIDTH COUPLING
500 MHz or
above
DC 1 M High
TERMINATIO
N
SYNC
TRIGGER
RESOLUTION
1. Enable power supply PS1
2. Gradually increase the voltage at PS1 into 4.95 V to 5.05 V range and monitor current using MM1 that should not exceed 150 mA
3. Enable channel A (ch.1) and channel B (ch.2) of function generator
4. Monitor current increase at MM1 but does not exceed 250 mA
5. Compare waveforms with typical screen shot showed in Figure 6
6. Disable function generator channels
7. Gradually reduce voltage at PS1 down to 0 and disable it (Make sure function generator outputs are
disabled before this action!)
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Test Setup and Results
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Figure 6. Major Input and Output Waveforms Using Output Overlapping Prevention Feature
INU (pink) is high side input: 3.0V/div
OU (green) is high side output: 10V/div
INL (blue) is low side input: 3.0V/div
OL (red) is low side output: 10V/div
Time scale is 50µs/div
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2.2.3 Thermistor Amplifier Test
Test setup for thermistor amplifier test is shown in Figure 7.
Test Setup and Results
1. Enable power supply PS1
2. Gradually increase the voltage at PS1 into 4.95 V to 5.05 V range and monitor current using MM1 that should not exceed 150 mA
3. Set resistances using Resistance Decade Box in accordance to Table 5 and monitor voltages at MM5 and MM6
4. Gradually reduce the voltage of power supply PS1 down to 0 V and disable it
RESISTANCE 5.0 k 2.0 k 800 280
MM5 (differential output) 1.85 V - 1.91 V 0.85 V - 0.91 V 0.36 V - 0.39 V 0.125 V - 0.145 V
MM6 (common output) 0.4 V - 0.6 V 0.8 V - 1.2 V 1.0 V - 1.4 V 1.2 V - 1.5 V
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Figure 7. Thermistor Amplifier Test Setup
Table 5. Themistor Amplifier Output Signals
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Test Setup and Results
2.2.4 7 Sense Amplifier Test
Test setup for input bus voltage sense amplifier test is shown in Figure 8.
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Figure 8. Input Bus Voltage Sense Amplifier Test Setup
1. Enable power supply PS1
2. Gradually increase the voltage at PS1 into 4.95 V to 5.05 V range and monitor current using MM1 that should not exceed 145 mA
3. Enable power supply PS2
4. Gradually increase the voltage of power supply PS2 from 0 V up to 300 V and monitor voltages in accordance to Table 6
5. Gradually decrease the voltage of power supply PS2 down to 0 and disable it
6. Gradually reduce the voltage of power supply PS1 down to 0 V and disable it
Table 6. Input Bus Voltage Sense Amplifier Outputs
PS2 0 V 49 V - 51 V 99 V - 101 V 149 V - 151 V 299 V - 301 V
MM5 (differential output) 0.28 V - 0.32 V 0.34 V - 0.38 V 0.39 V - 0.43 V 0.42 V - 0.48 V 0.58 V - 0.64 V
MM6 (common output) 1.15 V - 1.45 V 1.1 V - 1.4 V 1.05 V - 1.35 V 1.0 V - 1.3 V 0.95 V - 1.25 V
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Test Setup and Results
Figure 9. Safety Isolated Regions between High and Low Voltage Board Areas
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Board Layout
3 Board Layout
General top and bottom view, component placement and all four layers are shown in Figure 10 through
Figure 16 respectively.
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Figure 10. Top View of the Board
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Board Layout
Figure 11. Bottom View Of The Board
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Board Layout
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Figure 12. Component Placement
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Board Layout
Figure 13. Top Layer
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Board Layout
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Figure 14. Signal Layer 1
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Board Layout
Figure 15. Signal Layer 2
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Board Layout
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Figure 16. Bottom Layer
24
ISO5852SDW Driving and Protecting SiC and IGBT Power Modules
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4 Schematic and Bill of Materials
4.1 Schematic
The schematic of ISO5852SDWEVM-017 board is shown in Figure 17. Functional blocks of the schematic are shown in Figure 18 and below are listed the functions that related blocks perform.
B1 - high side +17.5V/-5V bias supply
B2 - low side +17.5V/-5V bias supply
B3 - connectors, UVLO/OVLO protection, fault and reset logic, overlapping option setting
B4 - high side driver with booster and desaturation protection
B5 - low side driver with booster and desaturation protection
B6 - input bus voltage sensing isolated amplifier
B7 - thermistor based temperature sense isolated amplifier
The ISO5852SDWEVM-017 EVM allows following adjustments depending on applications.
By default the board set into output overlapping protection mode. Removing resistor shunts R48 and R52 allows output overlapping
When attaching EVM to power module, it is recommended to remove output load capacitors C16 and C36
To set turn ON and OFF output driver voltages beoynd the default, UVLO/OVLO protection can be disabled by removing resistor R53
By removing resistive shunt R65 and using separate input supplies applied to connectors J1 and J2, turn ON and turn OFF drive voltages can be independently adjusted. The EVM maintains functionality if the VCC input supply voltages are within range from 3V to 5.5V. This allows set drive voltages approximately from +12 V to +21 V for turn ON drive voltage and from -3.5 V to -7 V for turn OFF drive voltage
Change of C15 and C35 values allows soft shutdown adjustment during short circuit protection respectively for high side and low side drivers
By default resistors R1 and R17 are not included. Adding these resistors provide additional current source for desaturation protection circuit
Schematic and Bill of Materials
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Schematic and Bill of Materials
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Figure 17. Electrical Schematic of ISO5852SDWEVM-017
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Schematic and Bill of Materials
Figure 18. Electrical Schematic with Functional Blocks Outlined
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Schematic and Bill of Materials
Additional waveforms are shown below to illustrate described above adjustments and EVM drive current capabilites. Operation waveforms with overlapping enabled is shown in Figure 19.
www.ti.com
Figure 19. Waveforms with Overlapping Enabled
INU (pink) is high side input: 3.0V/div
OU (green) is high side output: 10V/div
INL (blue) is low side input: 3.0V/div
OL (red) is low side output: 10V/div
Time scale is 50µs/div
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Current capability during turn ON is illustrated in Figure 20 by rise time while charging 10 nF load capacitors
Schematic and Bill of Materials
Figure 20. Rise Time and Propagation Delay Waveforms with 10 nF Load
INU (pink) is high side input: 3.0V/div
OU (green) is high side output: 10V/div
INL (blue) is low side input: 3.0V/div
OL (red) is low side output: 10V/div
Time scale is 50ns/div
Rise time is about 30 ns
Propagation delay is 133.5 ns
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Current capability during turn OFF with 10 nF load capacitors is illustrated in Figure 21.
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Figure 21. Fall Time and Propagation Delay Waveforms with 10 nF Load
INU (pink) is high side input: 3.0V/div
OU (green) is high side output: 10V/div
INL (blue) is low side input: 3.0V/div
OL (red) is low side output: 10V/div
Time scale is 50ns/div
Fall time is about 34 ns
Propagation delay is 98.5 ns
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4.2 Bill of Materials
DESIGNATOR QTY VALUE PART NUMBER MANUFACTURER DESCRIPTION
C1, C21 2 220pF GRM188R71H221KA01D MuRata
C2, C9, C22, C29 4 10uF C3216X7R1V106M160AC TDK C3, C5, C10, C11,
C18, C23, C25, C30, C31, C38, C45, C53
C4, C24 2 10uF GRM21BR6YA106KE43L MuRata
C6, C19, C27, C39 4 10uF C1608X5R1E106M080AC TDK
C7, C26, C43, C51 4 0.1uF CGA5L2X7R2A104K160AA TDK
C8, C20, C28, C40, C48
C12, C13, C32, C33 4 100pF CC0402JRNPO9BN101 Yageo America C14, C17, C34, C37,
C44, C52
C15, C35 2 0.015uF CGA3E2X7R2A153K080AA TDK
C16, C36 2 0.01uF GCM188R71H103KA37D MuRata
C41, C49 2 0.1uF 12061C104JAT2A AVX
C42 1 0.01uF C0402C103J5RACTU Kemet
C46, C47, C57, C58 4 10pF 04025U100CAT2A AVX
C50 1 0.01uF C0603H103J3GACTU Kemet
C54, C56 2 2.2uF C1206C225K4RACTU Kemet
C55 1 1uF UMK107AB7105KA-T Taiyo Yuden D1, D6, D8, D10,
D14, D16, D18, D20 D2, D5, D11, D15 4 1200V STTH112A STMicroelectronics
D3, D12 2 12V MMSZ5242BS-7-F Diodes Inc.
D4, D13 2 30V BAT54WS-7-F
D7, D17 2 40V B240A-13-F D9, D19 2 22V SMAJ22CA Littelfuse Diode, TVS, Bi, 22 V, SMA SMA FID1, FID2, FID3 3 N/A
J1 1 71918-220LF
J2 1 OSTVN02A150
L1 1 ACM4520-421-2P-T000
Q1, Q3 2 60 V ZXTN2010ZTA
Q2, Q4 2 60 V ZXTP2012ZTA
R1, R17 2 1.00k ERJ-P06F1001V
12 0.1uF C1005X7R1H104K050BB TDK
5 0.1uF GRM155R61A104KA01D MuRata
6 10uF C2012X5R1E106K125AB TDK
8 40V B0540WS-7 Diodes Inc.
Table 7. Bill of Materials
Diodes Inc. Diode, Schottky, 30 V, 0.2
Diodes Inc. Diode, Schottky, 40 V, 2 A,
N/A Fiducial mark. There is
FCI Header(shrouded),
On-Shore Technology Terminal Block, 2.54mm,
TDK Coupled inductor, 2.8 A,
Diodes Inc. Transistor, NPN, 60 V, 5 A,
Diodes Inc. Transistor, PNP, 60 V, 4.3
Panasonic RES, 1.00 k, 1%, 0.25 W,
Schematic and Bill of Materials
PACKAGE
REFERENCE
CAP, CERM, 220 pF, 50 V, +/- 10%, X7R, 0603
CAP, CERM, 10 uF, 35 V, +/- 20%, X7R, 1206_190
CAP, CERM, 0.1 uF, 50 V, +/- 10%, X7R, 0402
CAP, CERM, 10 uF, 35 V, +/- 10%, X5R, 0805
CAP, CERM, 10 uF, 25 V, +/- 20%, X5R, 0603
CAP, CERM, 0.1 uF, 100 V, +/- 10%, X7R, AEC­Q200 Grade 1, 1206
CAP, CERM, 0.1 uF, 10 V, +/- 10%, X5R, 0402
CAP, CERM, 100 pF, 50 V, +/- 5%, C0G/NP0, 0402
CAP, CERM, 10 uF, 25 V, +/- 10%, X5R, 0805
CAP, CERM, 0.015 uF, 100 V, +/- 10%, X7R, AEC­Q200 Grade 1, 0603
CAP, CERM, 0.01 uF, 50 V, +/- 10%, X7R, AEC­Q200 Grade 1, 0603
CAP, CERM, 0.1 uF, 100 V, +/- 5%, X7R, 1206
CAP, CERM, 0.01 uF, 50 V, +/- 5%, X7R, 0402
CAP, CERM, 10 pF, 50 V,+/- 2.5%, C0G/NP0, AEC-Q200 Grade 1, 0402
CAP, CERM, 0.01 uF, 25 V, +/- 5%, C0G/NP0, 0603
CAP, CERM, 2.2 uF, 16 V, +/- 10%, X7R, 1206
CAP, CERM, 1 uF, 50 V, +/- 10%, X7R, 0603
Diode, Schottky, 40 V, 0.5 A, SOD-323
Diode, Ultrafast, 1200 V, 1 A, SMA
Diode, Zener, 12 V, 200 mW, SOD-323
A, SOD-323
SMA
nothing to buy or mount.
2.54mm, 10x2, Gold with Tin tail, TH
2x1, Brass, TH
0.055 ohm, SMD
AEC-Q101, SOT-89
A, AEC-Q101, SOT-89
0805
0603
1206_190
0402
0805
0603
1206
0402
0402
0805
0603
0603
1206
0402
0402
0603
1206
0603
SOD-323
SMA
SOD-323
SOD-323
SMA
N/A Header(shroude
d), 2.54mm, 10x2, TH
Terminal Block,
2.54mm, 2-pole, Brass, TH
4.7x4.5mm
SOT-89
SOT-89
0805
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Schematic and Bill of Materials
DESIGNATOR QTY VALUE PART NUMBER MANUFACTURER DESCRIPTION
R2, R18 2 10.0k CRCW080510K0FKEA
R3, R19 2
R4, R5, R20, R21 4 100 CRCW0402100RFKED
R6, R22, R61 3 10 CRCW080510R0JNEA R7, R9, R11, R23,
R25, R27 R8, R10, R12, R14,
R15, R16, R24, R26, R28, R30, R31, R34
R13, R29, R63, R64 4 10.0k RC0603FR-0710KL
R32, R67 2 10.0k RMCF0402FT10K0 R33, R48, R52 3 0 ERJ-3GEY0R00V Panasonic RES, 0, 5%, 0.1 W, 0603 0603
R35, R65 2 0 MCR18EZHJ000 Rohm RES, 0, 5%, 0.25 W, 1206 1206 R36, R37, R38, R39,
R40, R41, R42, R43, R44
R45 1 49.9k CRCW040249K9FKED
R46 1 1.21k CRCW04021K21FKED
R47 1 523k CRCW0402523KFKED R49, R50, R51, R54,
R58, R59, R62, R66 R53 1 10.5k CRCW040210K5FKED
R55, R60 2 0 CRCW04020000Z0ED
R56 1 40.2k CRCW040240K2FKED Vishay-Dale
R57 1 100k RMCF0402FT100K T1, T3 2 50uH 750342879 Wurth Elektronik Transformer, 50 uH, SMT 9.14x8mm
T2, T4 2 340uH 750313734 Wurth Elektronik Transformer, 340 uH, TH 8x9.14mm TP1, TP2, TP3, TP4,
TP5, TP6, TP7, TP8, TP9, TP10, TP11, TP12, TP13, TP14
U1, U4 2 ISO5852SDWR Texas Instruments
U2, U3, U5, U6 4 SN6505BDBVR Texas Instruments
U7, U10 2 SN74AHC1G08QDBVRQ1 Texas Instruments
U8, U11 2 AMC1301DWVR Texas Instruments
U9 1 TPS3700QDDCRQ1 Texas Instruments
U12 1 TPS70950DBVR Texas Instruments
6 12 CRCW080512R0JNEA
12 1.20 CRCW12061R20FKEA
9
8 10.0 CRCW040210R0FKED
14 0508-0-00-15-00-00-03-0 Mill-Max
1.00Me g
1.00Me g
Table 7. Bill of Materials (continued)
CRCW08051M00FKEA
CRCW12061M00FKEA
Vishay-Dale RES, 10.0 k, 1%, 0.125 W,
Vishay-Dale RES, 1.00 M, 1%, 0.125
Vishay-Dale RES, 100, 1%, 0.063 W,
Vishay-Dale RES, 10, 5%, 0.125 W,
Vishay-Dale RES, 12, 5%, 0.125 W,
Vishay-Dale RES, 1.20, 1%, 0.25 W,
Yageo America RES, 10.0 k, 1%, 0.1 W,
Stackpole Electronics Inc
Vishay-Dale RES, 1.00 M, 1%, 0.25 W,
Vishay-Dale RES, 49.9 k, 1%, 0.063 W,
Vishay-Dale RES, 1.21 k, 1%, 0.063 W,
Vishay-Dale RES, 523 k, 1%, 0.063 W,
Vishay-Dale RES, 10.0, 1%, 0.063 W,
Vishay-Dale RES, 10.5 k, 1%, 0.063 W,
Vishay-Dale RES, 0, 5%, 0.063 W,
Stackpole Electronics Inc
0805
W, 0805
0402
0805
0805
AEC-Q200 Grade 0, 1206 1206
0603 RES, 10.0 k, 1%, 0.063 W,
AEC-Q200 Grade 0, 0402
1206 1206
0402
AEC-Q200 Grade 0, 0402
AEC-Q200 Grade 0, 0402
0402
AEC-Q200 Grade 0, 0402
AEC-Q200 Grade 0, 0402 RES, 40.2 k, 1%, 0.063 W,
AEC-Q200 Grade 0, 0402 RES, 100 k, 1%, 0.063 W,
AEC-Q200 Grade 0, 0402
PCB Pin, 20mil Dia, Gold,THPCB Pin, 20mil
5.7 kVrms Split O/P, Reinforced Isolated IGBT Gate Driver, DW0016B (SOIC-16)
Low-Noise 1 A, 420 kHz Transformer Driver, DBV0006A (SOT-23-6)
Automotive Catalog Single 2-Input Positive-AND Gate, DBV0005A, LARGE T&R
Precision +/-250-mV Input, 3-us Delay, Reinforced Isolated Amplifier, DWV0008A (SOIC-8)
Automotive, High-Voltage (18V) Window Comparator with Over- and Undervoltage Detection, DDC0006A (SOT-23-T-6)
150-mA, 30-V, Ultra-Low IQ, Wide Input Low­Dropout Regulator with Reverse Current Protection, DBV0005A (SOT-23-5)
www.ti.com
PACKAGE
REFERENCE
0805
0805
0402
0805
0805
0603
0402
0402
0402
0402
0402
0402
0402
0402
0402
Dia, TH
DW0016B
DBV0006A
DBV0005A
DWV0008A
DDC0006A
DBV0005A
32
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STANDARD TERMS FOR EVALUATION MODULES
1. Delivery: TI delivers TI evaluation boards, kits, or modules, including any accompanying demonstration software, components, and/or documentation which may be provided together or separately (collectively, an “EVM” or “EVMs”) to the User (“User”) in accordance with the terms set forth herein. User's acceptance of the EVM is expressly subject to the following terms.
1.1 EVMs are intended solely for product or software developers for use in a research and development setting to facilitate feasibility evaluation, experimentation, or scientific analysis of TI semiconductors products. EVMs have no direct function and are not finished products. EVMs shall not be directly or indirectly assembled as a part or subassembly in any finished product. For clarification, any software or software tools provided with the EVM (“Software”) shall not be subject to the terms and conditions set forth herein but rather shall be subject to the applicable terms that accompany such Software
1.2 EVMs are not intended for consumer or household use. EVMs may not be sold, sublicensed, leased, rented, loaned, assigned, or otherwise distributed for commercial purposes by Users, in whole or in part, or used in any finished product or production system.
2 Limited Warranty and Related Remedies/Disclaimers:
2.1 These terms do not apply to Software. The warranty, if any, for Software is covered in the applicable Software License Agreement.
2.2 TI warrants that the TI EVM will conform to TI's published specifications for ninety (90) days after the date TI delivers such EVM to User. Notwithstanding the foregoing, TI shall not be liable for a nonconforming EVM if (a) the nonconformity was caused by neglect, misuse or mistreatment by an entity other than TI, including improper installation or testing, or for any EVMs that have been altered or modified in any way by an entity other than TI, (b) the nonconformity resulted from User's design, specifications or instructions for such EVMs or improper system design, or (c) User has not paid on time. Testing and other quality control techniques are used to the extent TI deems necessary. TI does not test all parameters of each EVM. User's claims against TI under this Section 2 are void if User fails to notify TI of any apparent defects in the EVMs within ten (10) business days after delivery, or of any hidden defects with ten (10) business days after the defect has been detected.
2.3 TI's sole liability shall be at its option to repair or replace EVMs that fail to conform to the warranty set forth above, or credit User's account for such EVM. TI's liability under this warranty shall be limited to EVMs that are returned during the warranty period to the address designated by TI and that are determined by TI not to conform to such warranty. If TI elects to repair or replace such EVM, TI shall have a reasonable time to repair such EVM or provide replacements. Repaired EVMs shall be warranted for the remainder of the original warranty period. Replaced EVMs shall be warranted for a new full ninety (90) day warranty period.
3 Regulatory Notices:
3.1 United States
3.1.1 Notice applicable to EVMs not FCC-Approved:
FCC NOTICE: This kit is designed to allow product developers to evaluate electronic components, circuitry, or software associated with the kit to determine whether to incorporate such items in a finished product and software developers to write software applications for use with the end product. This kit is not a finished product and when assembled may not be resold or otherwise marketed unless all required FCC equipment authorizations are first obtained. Operation is subject to the condition that this product not cause harmful interference to licensed radio stations and that this product accept harmful interference. Unless the assembled kit is designed to operate under part 15, part 18 or part 95 of this chapter, the operator of the kit must operate under the authority of an FCC license holder or must secure an experimental authorization under part 5 of this chapter.
3.1.2 For EVMs annotated as FCC – FEDERAL COMMUNICATIONS COMMISSION Part 15 Compliant:
CAUTION
This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation.
Changes or modifications not expressly approved by the party responsible for compliance could void the user's authority to operate the equipment.
FCC Interference Statement for Class A EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instruction manual, may cause harmful interference to radio communications. Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to correct the interference at his own expense.
Page 34
FCC Interference Statement for Class B EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures:
Reorient or relocate the receiving antenna.
Increase the separation between the equipment and receiver.
Connect the equipment into an outlet on a circuit different from that to which the receiver is connected.
Consult the dealer or an experienced radio/TV technician for help.
3.2 Canada
3.2.1 For EVMs issued with an Industry Canada Certificate of Conformance to RSS-210 or RSS-247
Concerning EVMs Including Radio Transmitters:
This device complies with Industry Canada license-exempt RSSs. Operation is subject to the following two conditions: (1) this device may not cause interference, and (2) this device must accept any interference, including interference that may
cause undesired operation of the device.
Concernant les EVMs avec appareils radio:
Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence. L'exploitation est autorisée aux deux conditions suivantes: (1) l'appareil ne doit pas produire de brouillage, et (2) l'utilisateur de l'appareil doit accepter tout brouillage radioélectrique subi, même si le brouillage est susceptible d'en compromettre le fonctionnement.
Concerning EVMs Including Detachable Antennas:
Under Industry Canada regulations, this radio transmitter may only operate using an antenna of a type and maximum (or lesser) gain approved for the transmitter by Industry Canada. To reduce potential radio interference to other users, the antenna type and its gain should be so chosen that the equivalent isotropically radiated power (e.i.r.p.) is not more than that necessary for successful communication. This radio transmitter has been approved by Industry Canada to operate with the antenna types listed in the user guide with the maximum permissible gain and required antenna impedance for each antenna type indicated. Antenna types not included in this list, having a gain greater than the maximum gain indicated for that type, are strictly prohibited for use with this device.
Concernant les EVMs avec antennes détachables
Conformément à la réglementation d'Industrie Canada, le présent émetteur radio peut fonctionner avec une antenne d'un type et d'un gain maximal (ou inférieur) approuvé pour l'émetteur par Industrie Canada. Dans le but de réduire les risques de brouillage radioélectrique à l'intention des autres utilisateurs, il faut choisir le type d'antenne et son gain de sorte que la puissance isotrope rayonnée équivalente (p.i.r.e.) ne dépasse pas l'intensité nécessaire à l'établissement d'une communication satisfaisante. Le présent émetteur radio a été approuvé par Industrie Canada pour fonctionner avec les types d'antenne énumérés dans le manuel d’usage et ayant un gain admissible maximal et l'impédance requise pour chaque type d'antenne. Les types d'antenne non inclus dans cette liste, ou dont le gain est supérieur au gain maximal indiqué, sont strictement interdits pour l'exploitation de l'émetteur
3.3 Japan
3.3.1 Notice for EVMs delivered in Japan: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page 日本国内に
輸入される評価用キット、ボードについては、次のところをご覧ください。
http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page
3.3.2 Notice for Users of EVMs Considered “Radio Frequency Products” in Japan: EVMs entering Japan may not be certified by TI as conforming to Technical Regulations of Radio Law of Japan.
If User uses EVMs in Japan, not certified to Technical Regulations of Radio Law of Japan, User is required to follow the instructions set forth by Radio Law of Japan, which includes, but is not limited to, the instructions below with respect to EVMs (which for the avoidance of doubt are stated strictly for convenience and should be verified by User):
1. Use EVMs in a shielded room or any other test facility as defined in the notification #173 issued by Ministry of Internal Affairs and Communications on March 28, 2006, based on Sub-section 1.1 of Article 6 of the Ministry’s Rule for Enforcement of Radio Law of Japan,
2. Use EVMs only after User obtains the license of Test Radio Station as provided in Radio Law of Japan with respect to EVMs, or
3. Use of EVMs only after User obtains the Technical Regulations Conformity Certification as provided in Radio Law of Japan with respect to EVMs. Also, do not transfer EVMs, unless User gives the same notice above to the transferee. Please note that if User does not follow the instructions above, User will be subject to penalties of Radio Law of Japan.
Page 35
【無線電波を送信する製品の開発キットをお使いになる際の注意事項】 開発キットの中には技術基準適合証明を受けて いないものがあります。 技術適合証明を受けていないもののご使用に際しては、電波法遵守のため、以下のいずれかの 措置を取っていただく必要がありますのでご注意ください。
1. 電波法施行規則第6条第1項第1号に基づく平成18328日総務省告示第173号で定められた電波暗室等の試験設備でご使用 いただく。
2. 実験局の免許を取得後ご使用いただく。
3. 技術基準適合証明を取得後ご使用いただく。
なお、本製品は、上記の「ご使用にあたっての注意」を譲渡先、移転先に通知しない限り、譲渡、移転できないものとします。
上記を遵守頂けない場合は、電波法の罰則が適用される可能性があることをご留意ください。 日本テキサス・イ ンスツルメンツ株式会社 東京都新宿区西新宿6丁目24番1号 西新宿三井ビル
3.3.3 Notice for EVMs for Power Line Communication: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_02.page
電力線搬送波通信についての開発キットをお使いになる際の注意事項については、次のところをご覧ください。http:/
/www.tij.co.jp/lsds/ti_ja/general/eStore/notice_02.page
3.4 European Union
3.4.1 For EVMs subject to EU Directive 2014/30/EU (Electromagnetic Compatibility Directive): This is a class A product intended for use in environments other than domestic environments that are connected to a
low-voltage power-supply network that supplies buildings used for domestic purposes. In a domestic environment this product may cause radio interference in which case the user may be required to take adequate measures.
4 EVM Use Restrictions and Warnings:
4.1 EVMS ARE NOT FOR USE IN FUNCTIONAL SAFETY AND/OR SAFETY CRITICAL EVALUATIONS, INCLUDING BUT NOT LIMITED TO EVALUATIONS OF LIFE SUPPORT APPLICATIONS.
4.2 User must read and apply the user guide and other available documentation provided by TI regarding the EVM prior to handling or using the EVM, including without limitation any warning or restriction notices. The notices contain important safety information related to, for example, temperatures and voltages.
4.3 Safety-Related Warnings and Restrictions:
4.3.1 User shall operate the EVM within TI’s recommended specifications and environmental considerations stated in the user guide, other available documentation provided by TI, and any other applicable requirements and employ reasonable and customary safeguards. Exceeding the specified performance ratings and specifications (including but not limited to input and output voltage, current, power, and environmental ranges) for the EVM may cause personal injury or death, or property damage. If there are questions concerning performance ratings and specifications, User should contact a TI field representative prior to connecting interface electronics including input power and intended loads. Any loads applied outside of the specified output range may also result in unintended and/or inaccurate operation and/or possible permanent damage to the EVM and/or interface electronics. Please consult the EVM user guide prior to connecting any load to the EVM output. If there is uncertainty as to the load specification, please contact a TI field representative. During normal operation, even with the inputs and outputs kept within the specified allowable ranges, some circuit components may have elevated case temperatures. These components include but are not limited to linear regulators, switching transistors, pass transistors, current sense resistors, and heat sinks, which can be identified using the information in the associated documentation. When working with the EVM, please be aware that the EVM may become very warm.
4.3.2 EVMs are intended solely for use by technically qualified, professional electronics experts who are familiar with the dangers and application risks associated with handling electrical mechanical components, systems, and subsystems. User assumes all responsibility and liability for proper and safe handling and use of the EVM by User or its employees, affiliates, contractors or designees. User assumes all responsibility and liability to ensure that any interfaces (electronic and/or mechanical) between the EVM and any human body are designed with suitable isolation and means to safely limit accessible leakage currents to minimize the risk of electrical shock hazard. User assumes all responsibility and liability for any improper or unsafe handling or use of the EVM by User or its employees, affiliates, contractors or designees.
4.4 User assumes all responsibility and liability to determine whether the EVM is subject to any applicable international, federal, state, or local laws and regulations related to User’s handling and use of the EVM and, if applicable, User assumes all responsibility and liability for compliance in all respects with such laws and regulations. User assumes all responsibility and liability for proper disposal and recycling of the EVM consistent with all applicable international, federal, state, and local requirements.
5. Accuracy of Information: To the extent TI provides information on the availability and function of EVMs, TI attempts to be as accurate as possible. However, TI does not warrant the accuracy of EVM descriptions, EVM availability or other information on its websites as accurate, complete, reliable, current, or error-free.
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6. Disclaimers:
6.1 EXCEPT AS SET FORTH ABOVE, EVMS AND ANY MATERIALS PROVIDED WITH THE EVM (INCLUDING, BUT NOT LIMITED TO, REFERENCE DESIGNS AND THE DESIGN OF THE EVM ITSELF) ARE PROVIDED "AS IS" AND "WITH ALL FAULTS." TI DISCLAIMS ALL OTHER WARRANTIES, EXPRESS OR IMPLIED, REGARDING SUCH ITEMS, INCLUDING BUT NOT LIMITED TO ANY EPIDEMIC FAILURE WARRANTY OR IMPLIED WARRANTIES OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF ANY THIRD PARTY PATENTS, COPYRIGHTS, TRADE SECRETS OR OTHER INTELLECTUAL PROPERTY RIGHTS.
6.2 EXCEPT FOR THE LIMITED RIGHT TO USE THE EVM SET FORTH HEREIN, NOTHING IN THESE TERMS SHALL BE CONSTRUED AS GRANTING OR CONFERRING ANY RIGHTS BY LICENSE, PATENT, OR ANY OTHER INDUSTRIAL OR INTELLECTUAL PROPERTY RIGHT OF TI, ITS SUPPLIERS/LICENSORS OR ANY OTHER THIRD PARTY, TO USE THE EVM IN ANY FINISHED END-USER OR READY-TO-USE FINAL PRODUCT, OR FOR ANY INVENTION, DISCOVERY OR IMPROVEMENT, REGARDLESS OF WHEN MADE, CONCEIVED OR ACQUIRED.
7. USER'S INDEMNITY OBLIGATIONS AND REPRESENTATIONS. USER WILL DEFEND, INDEMNIFY AND HOLD TI, ITS LICENSORS AND THEIR REPRESENTATIVES HARMLESS FROM AND AGAINST ANY AND ALL CLAIMS, DAMAGES, LOSSES, EXPENSES, COSTS AND LIABILITIES (COLLECTIVELY, "CLAIMS") ARISING OUT OF OR IN CONNECTION WITH ANY HANDLING OR USE OF THE EVM THAT IS NOT IN ACCORDANCE WITH THESE TERMS. THIS OBLIGATION SHALL APPLY WHETHER CLAIMS ARISE UNDER STATUTE, REGULATION, OR THE LAW OF TORT, CONTRACT OR ANY OTHER LEGAL THEORY, AND EVEN IF THE EVM FAILS TO PERFORM AS DESCRIBED OR EXPECTED.
8. Limitations on Damages and Liability:
8.1 General Limitations. IN NO EVENT SHALL TI BE LIABLE FOR ANY SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL, OR EXEMPLARY DAMAGES IN CONNECTION WITH OR ARISING OUT OF THESE TERMS OR THE USE OF THE EVMS , REGARDLESS OF WHETHER TI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. EXCLUDED DAMAGES INCLUDE, BUT ARE NOT LIMITED TO, COST OF REMOVAL OR REINSTALLATION, ANCILLARY COSTS TO THE PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES, RETESTING, OUTSIDE COMPUTER TIME, LABOR COSTS, LOSS OF GOODWILL, LOSS OF PROFITS, LOSS OF SAVINGS, LOSS OF USE, LOSS OF DATA, OR BUSINESS INTERRUPTION. NO CLAIM, SUIT OR ACTION SHALL BE BROUGHT AGAINST TI MORE THAN TWELVE (12) MONTHS AFTER THE EVENT THAT GAVE RISE TO THE CAUSE OF ACTION HAS OCCURRED.
8.2 Specific Limitations. IN NO EVENT SHALL TI'S AGGREGATE LIABILITY FROM ANY USE OF AN EVM PROVIDED HEREUNDER, INCLUDING FROM ANY WARRANTY, INDEMITY OR OTHER OBLIGATION ARISING OUT OF OR IN CONNECTION WITH THESE TERMS, , EXCEED THE TOTAL AMOUNT PAID TO TI BY USER FOR THE PARTICULAR EVM(S) AT ISSUE DURING THE PRIOR TWELVE (12) MONTHS WITH RESPECT TO WHICH LOSSES OR DAMAGES ARE CLAIMED. THE EXISTENCE OF MORE THAN ONE CLAIM SHALL NOT ENLARGE OR EXTEND THIS LIMIT.
9. Return Policy. Except as otherwise provided, TI does not offer any refunds, returns, or exchanges. Furthermore, no return of EVM(s) will be accepted if the package has been opened and no return of the EVM(s) will be accepted if they are damaged or otherwise not in a resalable condition. If User feels it has been incorrectly charged for the EVM(s) it ordered or that delivery violates the applicable order, User should contact TI. All refunds will be made in full within thirty (30) working days from the return of the components(s), excluding any postage or packaging costs.
10. Governing Law: These terms and conditions shall be governed by and interpreted in accordance with the laws of the State of Texas, without reference to conflict-of-laws principles. User agrees that non-exclusive jurisdiction for any dispute arising out of or relating to these terms and conditions lies within courts located in the State of Texas and consents to venue in Dallas County, Texas. Notwithstanding the foregoing, any judgment may be enforced in any United States or foreign court, and TI may seek injunctive relief in any United States or foreign court.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2018, Texas Instruments Incorporated
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IMPORTANT NOTICE FOR TI DESIGN INFORMATION AND RESOURCES
Texas Instruments Incorporated (‘TI”) technical, application or other design advice, services or information, including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to assist designers who are developing applications that incorporate TI products; by downloading, accessing or using any particular TI Resource in any way, you (individually or, if you are acting on behalf of a company, your company) agree to use it solely for this purpose and subject to the terms of this Notice.
TI’s provision of TI Resources does not expand or otherwise alter TI’s applicable published warranties or warranty disclaimers for TI products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections, enhancements, improvements and other changes to its TI Resources.
You understand and agree that you remain responsible for using your independent analysis, evaluation and judgment in designing your applications and that you have full and exclusive responsibility to assure the safety of your applications and compliance of your applications (and of all TI products used in or for your applications) with all applicable regulations, laws and other applicable requirements. You represent that, with respect to your applications, you have all the necessary expertise to create and implement safeguards that (1) anticipate dangerous consequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that might cause harm and take appropriate actions. You agree that prior to using or distributing any applications that include TI products, you will thoroughly test such applications and the functionality of such TI products as used in such applications. TI has not conducted any testing other than that specifically described in the published documentation for a particular TI Resource.
You are authorized to use, copy and modify any individual TI Resource only in connection with the development of applications that include the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE TO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTY RIGHT OF TI OR ANY THIRD PARTY IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or endorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI.
TI RESOURCES ARE PROVIDED “AS IS” AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES OR REPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING TI RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TO ACCURACY OR COMPLETENESS, TITLE, ANY EPIDEMIC FAILURE WARRANTY AND ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF ANY THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
TI SHALL NOT BE LIABLE FOR AND SHALL NOT DEFEND OR INDEMNIFY YOU AGAINST ANY CLAIM, INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF PRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL, DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES.
You agree to fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of your non­compliance with the terms and provisions of this Notice.
This Notice applies to TI Resources. Additional terms apply to the use and purchase of certain types of materials, TI products and services. These include; without limitation, TI’s standard terms for semiconductor products http://www.ti.com/sc/docs/stdterms.htm), evaluation
modules, and samples (http://www.ti.com/sc/docs/sampterms.htm).
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2018, Texas Instruments Incorporated
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