Texas Instruments INA333, INA333AIDRGT Datasheet

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A

1

A

3

V

OUT

V

IN-

6

REF

5

RFIFilteredInputs

2

V+

7

V-

4

1

8

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A

2

V

IN+

RFIFilteredInputs

3

INA333

R

G

G=1+

100kW

R

G

RFIFilteredInputs

INA333

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...................................................................................................................................................................................................... SBOS445 – JULY 2008

Micro-Power (50 µ A), Zer ø -Drift, Rail-to-Rail Out

Instrumentation Amplifier

1

FEATURES DESCRIPTION

2

• LOW OFFSET VOLTAGE: 25 µ V (max), G ≥ 100

• LOW DRIFT: 0.1 µ V/ ° C, G ≥ 100

• LOW NOISE: 50nV/ √ Hz, G ≥ 100

• HIGH CMRR: 100dB (min), G ≥ 10

• LOW INPUT BIAS CURRENT: 200pA (max)

• SUPPLY RANGE: +1.8V to +5.5V

• INPUT VOLTAGE: (V – ) +0.1V to (V+) – 0.1V

• OUTPUT RANGE: (V – ) +0.05V to (V+) – 0.05V

• LOW QUIESCENT CURRENT: 50 µ A

• OPERATING TEMPERATURE: – 40 ° C to +125 ° C

• RFI FILTERED INPUTS

• MSOP-8 AND DFN-8 PACKAGES

APPLICATIONS

• BRIDGE AMPLIFIERS

• ECG AMPLIFIERS

• PRESSURE SENSORS

• MEDICAL INSTRUMENTATION

• PORTABLE INSTRUMENTATION

• WEIGH SCALES

• THERMOCOUPLE AMPLIFIERS

• RTD SENSOR AMPLIFIERS

• DATA ACQUISITION

The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design, small size, and low power make it ideal for a wide range of portable applications.

A single external resistor sets any gain from 1 to

1000. The INA333 is designed to use an industry-standard gain equation: G = 1 + (100k Ω /R

The INA333 provides very low offset voltage (25 µ V, G ≥ 100), excellent offset voltage drift (0.1 µ V/ ° C, G ≥ 100), and high common-mode rejection (100dB at G ≥ 10). It operates with power supplies as low as

1.8V ( ± 0.9V), and quiescent current is only 50 µ A — ideal for battery-operated systems. Using autocalibration techniques to ensure excellent precision over the extended industrial temperature range, the INA333 also offers exceptionally low noise density (50nV/ √ Hz) that extends down to dc.

The INA333 is available in both MSOP-8 and DFN-8 surface-mount packages and is specified over the TA= – 40 ° C to +125 ° C temperature range.

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1

2 All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

V

IN-

V

IN+

V-

R

G

V+

V

OUT

1

2

3

4

8

7

6

5

INA333

R

G

REF

R

G

V

IN-

V

IN+

V-

R

G

V+

V

OUT

REF

1

2

3

4

8

7

6

5

Exposed

Thermal DiePad

on

Underside

INA333

SBOS445 – JULY 2008 ......................................................................................................................................................................................................

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION

(1)

PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING

INA333

MSOP-8 DGK I333

(2)

DFN-8

DRG I333A

(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com .

(2) Available Q4, 2008.

ABSOLUTE MAXIMUM RATINGS

(1)

INA333 UNIT

Supply voltage +7 V Analog input voltage range Output short-circuit Operating temperature range, T Storage temperature range, T Junction temperature, T

(2)

(3)

A

J

(V – ) – 0.3 to (V+) + 0.3 V

Continuous – 40 to +150 ° C – 65 to +150 ° C

+150 ° C

Human body model (HBM) 4000 V

ESD rating Charged device model (CDM) 1000 V

Machine model (MM) 200 V

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3V beyond the supply rails should

be current limited to 10mA or less.

(3) Short-circuit to ground.

PIN CONFIGURATIONS

DGK PACKAGE

MSOP-8

(TOP VIEW)

Product Folder Link(s): INA333

DRG PACKAGE

DFN-8

(TOP VIEW)

INA333

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ELECTRICAL CHARACTERISTICS: V

...................................................................................................................................................................................................... SBOS445 – JULY 2008

= +1.8V to +5.5V

S

Boldface limits apply over the specified temperature range, TA= – 40 ° C to +125 ° C.

At TA= +25 ° C, RL= 10k Ω , V

(1)

INPUT

Offset voltage, RTI

vs Temperature ± 0.1 ± 0.5/G µ V/ ° C

vs Power supply PSR 1.8V ≤ VS≤ 5.5V ± 1 ± 5/G ± 5 ± 15/G µ V/V

Long-term stability See note Turn-on time to specified V Impedance

Differential Z

Common-mode Z Common-mode voltage range V Common-mode rejection CMR DC to 60Hz

G = 1 VCM= (V – ) + 0.1V to (V+) – 0.1V 80 90 dB

G = 10 VCM= (V – ) + 0.1V to (V+) – 0.1V 100 110 dB

G = 100 VCM= (V – ) + 0.1V to (V+) – 0.1V 100 115 dB

G = 1000 VCM= (V – ) + 0.1V to (V+) – 0.1V 100 115 dB

INPUT BIAS CURRENT

Input bias current I

vs Temperature See Typical Characteristic curve pA/ ° C

Input offset current I

vs Temperature See Typical Characteristic curve pA/ ° C INPUT VOLTAGE NOISE

Input voltage noise e

f = 10Hz 50 nV/ √ Hz

f = 100Hz 50 nV/ √ Hz

f = 1kHz 50 nV/ √ Hz

f = 0.1Hz to 10Hz 1 µ V Input current noise i

f = 10Hz 100 fA/ √ Hz

f = 0.1Hz to 10Hz 2 pA

GAIN

Gain equation G 1 + (100k Ω /RG) V/V Range of gain 1 1000 V/V Gain error VS= 5.5V, (V – ) + 100mV ≤ VO≤ (V+) – 100mV

G = 1 ± 0.01 ± 0.1 %

G = 10 ± 0.05 ± 0.25 %

G = 100 ± 0.07 ± 0.25 %

G = 1000 ± 0.25 ± 0.5 %

(1) Total VOS, Referred-to-input = (V (2) RTI = Referred-to-input. (3) 300-hour life test at +150 ° C demonstrated randomly distributed variation of approximately 1 µ V.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

(2)

OSI

= 0, and G = 1, unless otherwise noted.

REF

V

OSI

IN IN

CM

B

OS

NI

N

) + (V

OSI

/G).

OSO

INA333

± 10 ± 25/G ± 25 ± 75/G µ V

(3)

See Typical characteristics

100 || 3 G Ω || pF 100 || 3 G Ω || pF

VO= 0V (V – ) + 0.1 (V+) – 0.1 V

± 70 ± 200 pA

± 50 ± 200 pA

G = 100, RS= 0 Ω

PP

Product Folder Link(s): INA333

INA333

SBOS445 – JULY 2008 ......................................................................................................................................................................................................

ELECTRICAL CHARACTERISTICS: V

= +1.8V to +5.5V (continued)

S

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Boldface limits apply over the specified temperature range, TA= – 40 ° C to +125 ° C.

At TA= +25 ° C, RL= 10k Ω , V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT GAIN (continued) Gain vs Temperature

G = 1 ± 1 ± 5 ppm/ ° C

(4)

G > 1

Gain nonlinearity VS= 5.5V, (V – ) + 100mV ≤ VO≤ (V+) – 100mV

G = 1 to 1000 RL= 10k Ω 10 ppm

OUTPUT

Output voltage swing from rail Capacitive load drive 500 pF Short-circuit current I

FREQUENCY RESPONSE

Bandwidth, – 3dB

G = 1 150 kHz G = 10 35 kHz G = 100 3.5 kHz G = 1000 350 Hz

Slew rate SR VS= 5V, VO= 4V Step

G = 1 0.16 V/ µ s G = 100 0.05 V/ µ s

Settling time to 0.01% t

G = 1 V G = 100 V

Settling time to 0.001% t

G = 1 V G = 100 V

Overload recovery 50% overdrive 75 µ s

REFERENCE INPUT

R

IN

Voltage range V – V+ V

POWER SUPPLY

Voltage range

Single +1.8 +5.5 V Dual ± 0.9 ± 2.75 V

Quiescent current I

vs Temperature 80 µ A

TEMPERATURE RANGE

Specified temperature range – 40 +125 ° C Operating temperature range – 40 +150 ° C Thermal resistance θ

MSOP 100 ° C/W DFN 65 ° C/W

(4) Does not include effects of external resistor RG. (5) See Typical Characteristics curve, Output Voltage Swing vs Output Current (Figure 29 ).

(5)

= 0, and G = 1, unless otherwise noted.

REF

SC

S

Q

JA

INA333

± 15 ± 50 ppm/ ° C

VS= 5.5V, RL= 10k Ω See note

(5)

50 mV

Continuous to common – 40, +5 mA

= 4V 50 µ s

STEP

= 4V 400 µ s

STEP

= 4V 60 µ s

STEP

= 4V 500 µ s

STEP

300 k Ω

VIN= VS/2 50 75 µ A

Product Folder Link(s): INA333

-25.0

InputOffsetVoltage( V)m

Population

V =5.5V

S

-2.5

0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

22.5

-5.0

-7.5

-10.0

-12.5

-15.0

-17.5

-20.0

-22.5

25.0

-0.10

InputVoltageOffsetDrift( V/ C)m °

Population

0.10

V =5.5V

S

-

0.01

0

0.0

1

0.02

0.03

0.04

0.0

5

0.06

0.07

0.08

0.09

- 20.0

- 30.0

- 40.0

- 50.0

- 60.0

- 70.0

- 80.0

- 90.0

-

75.0

OutputOffsetVoltage( V)m

Population

V =5.5V

S

-7.5

0

7.5

15.0

22.5

30.0

37.5

45.0

52.5

60.0

67.5

-15.0

-22.5

-30.0

-37.5

-45.0

-52.5

-60.0

-67.5

75.0

-0.50

OutputVoltageOffsetDrift( V/ C)m °

Population

0.50

V =5.5V

S

-

0.05

0

0.0

5

0.10

0.15

0.20

0.2

5

0.30

0.35

0.40

0.45

-0.10

-0.15

-0.20

- 50.2

-

0.30

-0.35

-0.40

-0.45

Time(1s/div)

Gain=1

Noise(1 V/div)m

0

5

10

15

20

25

-

0

0.5

1.0

1.5

V (V)

CM

V ( V)m

OS

5.0

2.0

V =5V

S

3.0 4.02.5 3.5 4.5

V =1.8V

S

INA333

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...................................................................................................................................................................................................... SBOS445 – JULY 2008

TYPICAL CHARACTERISTICS

At TA= +25 ° C, RL= 10k Ω , V

INPUT OFFSET VOLTAGE ( – 40 ° C to +125 ° C)

Figure 1. Figure 2.

OUTPUT OFFSET VOLTAGE ( – 40 ° C to +125 ° C)

= 0, and G = 1, unless otherwise noted.

REF

INPUT VOLTAGE OFFSET DRIFT

OUTPUT VOLTAGE OFFSET DRIFT

Figure 3. Figure 4.

OFFSET VOLTAGE vs COMMON-MODE VOLTAGE 0.1Hz TO 10Hz NOISE

Figure 5. Figure 6.

Product Folder Link(s): INA333

Time(1s/div)

Gain=100

Noise(0.5 V/div)m

1000

100

10

1

0.1

1

10

100

1k

Frequency(Hz)

VoltageNoiseDensity(nV/ )

Ö

Hz

10k

CurrentNoise

OutputNoise

InputNoise

TotalInput-ReferredNoise=

(InputNoise) +

2

(OutputNoise)

G

2

1000

100

10

1

CurrentNoiseDensity(f )A/Ö

Hz

Time(25 s/div)m

Gain=1

OutputVoltage(1V/div)

0.012

0.008

0.004

0

0.004

0.008

0.012

-

0

1.0

V (V)

OUT

DCOutputNonlinearityError(%FSR)

5.5

2.0 3.0 4.0

0.5 1.5 2.5 3.5 4.5 5.0

G=1000 G=100 G=10 G=1

Time(100 s/div)m

Gain=100

OutputVoltage(1V/div)

Time(10 s/div)m

Gain=1

OutputVoltage(50mV/div)

INA333

SBOS445 – JULY 2008 ......................................................................................................................................................................................................

At TA= +25 ° C, RL= 10k Ω , V

0.1Hz TO 10Hz NOISE SPECTRAL NOISE DENSITY

NONLINEARITY ERROR LARGE SIGNAL RESPONSE

TYPICAL CHARACTERISTICS (continued)

= 0, and G = 1, unless otherwise noted.

REF

Figure 7. Figure 8.

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Figure 9. Figure 10.

LARGE-SIGNAL STEP RESPONSE SMALL-SIGNAL STEP RESPONSE

Figure 11. Figure 12.

Product Folder Link(s): INA333

Time(100 s/div)m

Gain=100

OutputVoltage(50mV/div)

10000

1000

100

10

1

10

100

Gain(V/V)

Time( s)m

1000

0.01%

0.001%

0.1%

Time(50 s/div)m

Gain=1

Supply(1V/div)

Supply

V

OUT

V (50 V/div)m

OUT

80

60

40

20

0

20

40

60

-

10

100

1k

10k

Frequency(Hz)

Gain(dB)

1M

G=1

G=1000

G=100

G=10

100k

10

8

6

4

2

0

2

4

6

8

10

-

-50

-25

0

25

50

75

100

Temperature( C)°

CMRR(

V/V)

m

G=100,

G=1000

150

V = 2.75V

S

±

V = 0.9V±

S

125

G=1

G=10

-100

CMRR( V/V)m

Population

100

V =5.5V

S

-10

0

10

20

30

40

50

60

70

80

90

-20

-30

-40

-50

-60

-70

-80

-90

INA333

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...................................................................................................................................................................................................... SBOS445 – JULY 2008

At TA= +25 ° C, RL= 10k Ω , V

SMALL-SIGNAL STEP RESPONSE SETTLING TIME vs GAIN

STARTUP SETTLING TIME GAIN vs FREQUENCY

TYPICAL CHARACTERISTICS (continued)

= 0, and G = 1, unless otherwise noted.

REF

Figure 13. Figure 14.

Figure 15. Figure 16.

COMMON-MODE REJECTION RATIO COMMON-MODE REJECTION RATIO vs TEMPERATURE

Figure 17. Figure 18.

Product Folder Link(s): INA333