The INA217 is a low-noise, low-distortion, monolithic instrumentation amplifier. Current-feedback circuitry allows the
INA217 to achieve wide bandwidth and excellent dynamic
response over a wide range of gain. The INA217 is ideal for
low-level audio signals such as balanced low-impedance
microphones. Many industrial, instrumentation, and medical
applications also benefit from its low noise and wide bandwidth.
Unique distortion cancellation circuitry reduces distortion to
extremely low levels, even in high gain. The INA217 provides
near-theoretical noise performance for 200Ω source impedance. The INA217 features differential input, low noise, and
low distortion that provides superior performance in professional microphone amplifier applications.
The INA217 features wide supply voltage, excellent output
voltage swing, and high output current drive, making it an
optimal candidate for use in high-level audio stages.
The INA217 is available in the same DIP-8 and SOL-16 wide
body packages and pinouts as the SSM2017. For a smaller
package, see the INA163 in SO-14 narrow. The INA217 is
specified over the temperature range of –40°C to +85°C.
5kΩ
8
RG
2
3
VIN+
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Supply Voltage, V+ to V–.................................................................. ±18V
Signal Input Terminals, Voltage
Output Short-Circuit
Operating Temperature .................................................. –55°C to +125°C
Storage Temperature ..................................................... –55°C to +150°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s)............................................... +300°C
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. (2) Input terminals are diode-clamped to the power-supply
rails. Input signals that can swing more than 0.5V beyond the supply rails
should be current limited to 10mA or less. (3) Short-circuit to ground, one
amplifier per package.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
PACKAGE/ORDERING INFORMATION
PRODUCTPACKAGE-LEADDESIGNATORMARKING
INA217SOL-16DWINA217
INA217DIP-8PINA217
NOTES: (1) For the most current package and ordering information, see the
Package Option Addendum at the end of this document, or see the TI website
at www.ti.com.
(1)
PACKAGEPACKAGE
PIN CONFIGURATIONS
Top View
16
NC
15
RG
2
14
NC
13
V+
12
NC
11
V
OUT
10
REF
9
NC
RG
V
V
NC
NC
IN
IN
NC
V–
NC
1
2
1
3
4
–
5
+
6
7
8
RG
VIN–
V
IN
V–
1
1
2
3
+
4
DIP-8
8
RG
2
7
V+
6
V
OUT
5
REF
SOL-16
NC = No Internal Connection
2
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INA217
SBOS247B
ELECTRICAL CHARACTERISTICS: VS = ±15V
Boldface limits apply over the specified temperature range, TA = –40°C to +85°C.
TA = +25°C, RL = 2kΩ, VS = ±15V, unless otherwise noted.
INA217
PARAMETERCONDITIONSMINTYPMAXUNITS
GAIN EQUATIONG = 1 + 10k/R
Range1 to 10000V/V
Gain Error, G = 1±0.1±0.25%
G = 10±0.2±0.7%
G = 100±0.2%
G = 1000±0.5%
Gain Temp Drift Coefficient, G = 1
G > 10
Nonlinearity, G = 1±0.0003% of FS
G = 100±0.0006% of FS
INPUT STAGE NOISE
Voltage NoiseR
f
= 1kHz1.3nV/
O
fO = 100Hz1.5nV/
SOURCE
= 0Ω
fO = 10Hz3.5nV/
Current Noise
f
= 1kHz0.8pA/
O
OUTPUT STAGE NOISE
Voltage Noise, f
= 1kHz90nV/
O
INPUT OFFSET VOLTAGE
Input Offset VoltageV
vs TemperatureT
vs Power SupplyV
= V
CM
A
= ±4.5V to ±18V1 + 50/G3 + 200/GµV/V
S
= 0V50 + 2000/G250 + 5000/GµV
OUT
= T
MIN
to T
MAX
1 + 20/GµV/°C
INPUT VOLTAGE RANGE
Common-Mode Voltage RangeV
Common-Mode Rejection, G = 1V
G = 100100116dB
+ – VIN– = 0V(V+) – 4(V+) – 3V
IN
V
+ – VIN– = 0V(V–) + 4(V–) + 3V
IN
= ±11V, R
CM
= 0Ω7080dB
SRC
INPUT BIAS CURRENT
Initial Bias Current212µA
vs Temperature10nA/
Initial Offset Current0.11µA
vs Temperature0.5nA/
INPUT IMPEDANCE
Differential60 2MΩ pF
Common-Mode60 2MΩ pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3dB, G = 13.4MHz
G = 100800kHz
Slew Rate15V/µs
THD+Noise, f = 1kHzG = 1000.004%
Settling Time, 0.1%G = 100, 10V Step2µs
NOTE: (1) Gain accuracy is a function of external R
θ
JA
.
G
G
±3±10ppm/°C
±40±100ppm/°C
+85°C/W
√Hz
√Hz
√Hz
√Hz
√Hz
°C
°C
INA217
SBOS247B
www.ti.com
3
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.
70
60
50
40
30
20
Gain (dB)
10
0
–10
–20
1k
100
10
Noise (RTI) (nV/√Hz)
1
G = 1000
G = 100
G = 10
10k100k1M10M
101001k10k
GAIN vs FREQUENCY
G = 1
Frequency (Hz)
NOISE VOLTAGE (RTI) vs FREQUENCY
G = 1
G = 10
G = 100
G = 500
Frequency (Hz)
G = 1000
0.1
0.01
THD+N (%)
0.001
0.0001
201001k10k 20k
10.0
1
Current Noise Density (pA/ Hz)
0.1
1101001k10k
THD+N vs FREQUENCY
G = 1000
G = 100
G = 10
G = 1
Frequency (Hz)
CURRENT NOISE SPECTRAL DENSITY
Frequency (Hz)
VO = 7Vrms
R
= 10kΩ
L
140
120
G = 100
100
G = 10
80
G = 1
60
40
Input Referred CMR (dB)
20
0
101M
4
CMR vs FREQUENCY
G = 1000
1001k10k100k
Frequency (Hz)
www.ti.com
POWER-SUPPLY REJECTION
140
G = 100, 1000
120
G = 10
100
G = 1
80
60
40
Power-Supply Rejection (dB)
20
0
11M101001k10k100k
vs FREQUENCY
Frequency (Hz)
INA217
SBOS247B
TYPICAL CHARACTERISTICS (Cont.)
SETTLING TIME vs GAIN
Settling Time (µs)
Gain
1101001000
10
8
6
4
2
0
20V Step
0.01%
0.1%
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 100)
20mV/div
10µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 100)
5V/div
2.5µs/div
At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
V+
(V+) – 2
(V+) – 4
(V+) – 6
(V–) + 6
(V–) + 4
Output Voltage to Rail (V)
(V–) + 2
V–
0 102030405060
Output Current (mA)
20mV/div
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 1)
2.5µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 1)
5V/div
INA217
SBOS247B
2.5µs/div
www.ti.com
5
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for operation.
Power supplies should be bypassed with 0.1µF tantalum
capacitors near the device pins. The output Reference (pin 5)
should be a low-impedance connection. Resistance of a few
ohms in series with this connection will degrade the common-mode rejection of the INA217.
GAIN-SET RESISTOR
Gain is set with an external resistor, RG, as shown in Figure 1.
The two internal 5kΩ feedback resistors are laser-trimmed to
5kΩ within approximately ±0.2%. The gain equation for the
INA217 is:
=+1
10 000,
R
G
. Avoid
G
.
G
The temperature coefficient of the internal 5kΩ resistors is
approximately ±25ppm/°C. Accuracy and TCR of the external R
will also contribute to gain error and temperature drift.
G
These effects can be inferred from the gain equation. Make
a short, direct connection to the gain set resistor, R
running output signals near these sensitive input nodes
NOISE PERFORMANCE
The INA217 provides very low noise with low-source impedance. Its 1.3nV/
noise performance with a source impedance of 200Ω. The
input stage design used to achieve this low noise results in
√Hz
voltage noise delivers near-theoretical
relatively high input bias current and input bias current noise.
As a result, the INA217 may not provide the best noise
performance with a source impedance greater than 10kΩ.
For source impedance greater than 10kΩ, other instrumentation amplifiers may provide improved noise performance.
INPUT CONSIDERATIONS
Very low source impedance (less than 10Ω) can cause the
INA217 to oscillate. This depends on circuit layout, signal
source, and input cable characteristics. An input network
consisting of a small inductor and resistor, as shown in
Figure 2, can greatly reduce any tendency to oscillate. This
is especially useful if a variety of input sources are to be
connected to the INA217. Although not shown in other
figures, this network can be used as needed with all applications shown.
2
1
8
3
V+
7
INA217
4
V–
6
V
O
5
47Ω
VIN–
V
+
IN
1.2µH
1.2µH
47Ω
FIGURE 2. Input Stabilization Network.
VIN–
V
V+
0.1µF
7
2
–
V
IN
1
R
G
8
V
+
IN
3
V+
Sometimes Shown in
Simplified Form:NOTE: (1) NC = No Connection.
R
INA217
G
+
IN
A1
5kΩ
5kΩ
A2
V
O
6kΩ6kΩ
6kΩ6kΩ
INA217
A3
4
0.1µF
V–
6
REF
5
V
G = 1 +
OUT
10000
R
G
GAINR
(V/V)(dB)(Ω)
10NC
2610000
5142500
10201111
2026526
5034204
10040101
2004650
5005420
10006010
2000665
G
(1)
V–
FIGURE 1. Basic Circuit Connections.
6
www.ti.com
INA217
SBOS247B
OFFSET VOLTAGE TRIM
A variable voltage applied to pin 5, as shown in Figure 3, can
be used to adjust the output offset voltage. A voltage applied
to pin 5 is summed with the output signal. An op amp
connected as a buffer is used to provide a low impedance at
pin 5 to assure good common-mode rejection.
V+
2
7
1
8
3
INA217
4
V–
R
G
FIGURE 3. Offset Voltage Adjustment Circuit.
5
6
OPA237
V
O
10kΩ
V+
100µA
150Ω
150Ω
100µA
V–
MICROPHONE AMPLIFIER
Figure 4 shows a typical circuit for a professional microphone
input amplifier. R
tional 48V phantom power source for a remotely located
microphone. An optional switch allows phantom power to be
disabled. C
the INA217 input circuitry. Non-polarized capacitors should
be used for C
additional input protection against ESD and hot-plugging,
four IN4148 diodes may be connected from the input to
supply lines.
R
and R5 provide a path for input bias current of the INA217.
4
Input offset current (typically 100nA) creates a DC differential
input voltage that will produce an output offset voltage. This
is generally the dominant source of output offset voltage in
this application. With a maximum gain of 1000 (60dB), the
output offset voltage can be several volts. This may be
entirely acceptable if the output is AC-coupled into the
subsequent stage. An alternate technique is shown in Figure 4.
An inexpensive FET-input op amp in a feedback loop drives
the DC output voltage to 0V. A2 is not in the audio signal path
and does not affect signal quality.
Gain is set with a variable resistor, R
R
determines the maximum gain. The total resistance,
6
R
+ R7, determines the lowest gain. A special reverse-log
6
taper potentiometer for R
change (in dB) with rotation.
and R2 provide a current path for conven-
1
and C2 block the phantom power voltage from
1
and C2 if phantom power is to be disabled. For
1
, in series with R6.
7
can be used to create a linear
7
Phantom Power
+48V
R
1
6.8kΩ
1
Female XLR
Connector
NOTES: (1) Use non-polar capacitors if phantom power is to be
turned off. (2) R
(4) Optional IN4148 prevents damage due to ESD and hot-plugging.
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Lead/Ball Finish MSL Peak Temp
CU NIPDAULevel-3-260C-168 HR
CU NIPDAULevel-3-260C-168 HR
CU NIPDAULevel-3-260C-168 HR
CU NIPDAULevel-3-260C-168 HR
CU NIPDAUN / A for Pkg Type
CU NIPDAUN / A for Pkg Type
(3)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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