TEXAS INSTRUMENTS INA217 Technical data

I
N
A
2
1
7
I
N
A
2
1
7
SBOS247B – JUNE 2002 – REVISED FEBRUARY 2005
Low-Noise, Low-Distortion
INSTRUMENTATION AMPLIFIER
Replacement for SSM2017
INA217
FEATURES
LOW NOISE: 1.3nV/Hz at 1kHz
LOW THD+N: 0.004% at 1kHz, G = 100
WIDE BANDWIDTH: 800kHz at G = 100
WIDE SUPPLY RANGE:
±4.5V to ±18V
HIGH CMR: > 100dB
GAIN SET WITH EXTERNAL RESISTOR
DIP-8 AND SOL-16 WIDEBODY PACKAGES
APPLICATIONS
PROFESSIONAL MICROPHONE PREAMPS
MOVING-COIL TRANSDUCER AMPLIFIERS
DIFFERENTIAL RECEIVERS
BRIDGE TRANSDUCER AMPLIFIERS
V+
7
INA217
VIN–
RG
2
1
1
A1
5k
6k 6k
DESCRIPTION
The INA217 is a low-noise, low-distortion, monolithic instru­mentation amplifier. Current-feedback circuitry allows the INA217 to achieve wide bandwidth and excellent dynamic response over a wide range of gain. The INA217 is ideal for low-level audio signals such as balanced low-impedance microphones. Many industrial, instrumentation, and medical applications also benefit from its low noise and wide band­width.
Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain. The INA217 provides near-theoretical noise performance for 200 source imped­ance. The INA217 features differential input, low noise, and low distortion that provides superior performance in profes­sional microphone amplifier applications.
The INA217 features wide supply voltage, excellent output voltage swing, and high output current drive, making it an optimal candidate for use in high-level audio stages.
The INA217 is available in the same DIP-8 and SOL-16 wide body packages and pinouts as the SSM2017. For a smaller package, see the INA163 in SO-14 narrow. The INA217 is specified over the temperature range of –40°C to +85°C.
5k
8
RG
2
3
VIN+
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
A2
6k 6k
45
V–
A3
REF
6
V
OUT
10k
G = 1 +
R
www.ti.com
G
Copyright © 2002-2005, Texas Instruments Incorporated
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V–.................................................................. ±18V
Signal Input Terminals, Voltage
Output Short-Circuit
Operating Temperature .................................................. –55°C to +125°C
Storage Temperature ..................................................... –55°C to +150°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s)............................................... +300°C
NOTES: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. (2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5V beyond the supply rails should be current limited to 10mA or less. (3) Short-circuit to ground, one amplifier per package.
(3)
(2)
.................. (V–) – 0.5V to (V+) + 0.5V
(2)
Current
.............................................................. Continuous
.................................................... 10mA
(1)
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru­ments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
PRODUCT PACKAGE-LEAD DESIGNATOR MARKING
INA217 SOL-16 DW INA217 INA217 DIP-8 P INA217
NOTES: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.
(1)
PACKAGE PACKAGE
PIN CONFIGURATIONS
Top View
16
NC
15
RG
2
14
NC
13
V+
12
NC
11
V
OUT
10
REF
9
NC
RG
V V
NC
NC
IN
IN
NC
V–
NC
1 2
1
3 4
5
+
6 7 8
RG VIN– V
IN
V–
1
1
2 3
+
4
DIP-8
8
RG
2
7
V+
6
V
OUT
5
REF
SOL-16
NC = No Internal Connection
2
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INA217
SBOS247B
ELECTRICAL CHARACTERISTICS: VS = ±15V
Boldface limits apply over the specified temperature range, TA = –40°C to +85°C.
TA = +25°C, RL = 2k, VS = ±15V, unless otherwise noted.
INA217
PARAMETER CONDITIONS MIN TYP MAX UNITS GAIN EQUATION G = 1 + 10k/R
Range 1 to 10000 V/V Gain Error, G = 1 ±0.1 ±0.25 %
G = 10 ±0.2 ±0.7 % G = 100 ±0.2 % G = 1000 ±0.5 %
Gain Temp Drift Coefficient, G = 1
G > 10
Nonlinearity, G = 1 ±0.0003 % of FS
G = 100 ±0.0006 % of FS
INPUT STAGE NOISE
Voltage Noise R
f
= 1kHz 1.3 nV/
O
fO = 100Hz 1.5 nV/
SOURCE
= 0
fO = 10Hz 3.5 nV/
Current Noise
f
= 1kHz 0.8 pA/
O
OUTPUT STAGE NOISE
Voltage Noise, f
= 1kHz 90 nV/
O
INPUT OFFSET VOLTAGE
Input Offset Voltage V
vs Temperature T
vs Power Supply V
= V
CM
A
= ±4.5V to ±18V 1 + 50/G 3 + 200/G µV/V
S
= 0V 50 + 2000/G 250 + 5000/G µV
OUT
= T
MIN
to T
MAX
1 + 20/G µV/°C
INPUT VOLTAGE RANGE
Common-Mode Voltage Range V
Common-Mode Rejection, G = 1 V
G = 100 100 116 dB
+ – VIN– = 0V (V+) – 4 (V+) – 3V
IN
V
+ – VIN– = 0V (V–) + 4 (V–) + 3 V
IN
= ±11V, R
CM
= 0 70 80 dB
SRC
INPUT BIAS CURRENT
Initial Bias Current 212µA
vs Temperature 10 nA/
Initial Offset Current 0.1 1 µA
vs Temperature 0.5 nA/
INPUT IMPEDANCE
Differential 60 2MΩ  pF
Common-Mode 60 2MΩ  pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3dB, G = 1 3.4 MHz
G = 100 800 kHz Slew Rate 15 V/µs THD+Noise, f = 1kHz G = 100 0.004 % Settling Time, 0.1% G = 100, 10V Step 2 µs
0.01% G = 100, 10V Step 3.5 µs
Overload Recovery 50% Overdrive 1 µs
OUTPUT
Voltage R
to GND (V+) – 2 (V+) – 1.8 V
L
(V–) + 2 (V–) + 1.8 V Load Capacitance Stability 1000 pF Short-Circuit Current Continuous-to-Common ±60 mA
POWER SUPPLY
Rated Voltage ±15 V Voltage Range ±4.5 ±18 V Current, Quiescent I
= 0mA ±10 ±12 mA
O
TEMPERATURE RANGE
Specification –40 +85 °C Operating –40 +125 °C Thermal Resistance
DIP-8 SOL-16 +90 °C/W
NOTE: (1) Gain accuracy is a function of external R
θ
JA
.
G
G
±3 ±10 ppm/°C
±40 ±100 ppm/°C
+85 °C/W
HzHzHz
Hz
Hz
°C °C
INA217
SBOS247B
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3
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = ±15V, RL = 2k, unless otherwise noted.
70 60 50 40 30 20
Gain (dB)
10
0
1020
1k
100
10
Noise (RTI) (nV/Hz)
1
G = 1000
G = 100
G = 10
10k 100k 1M 10M
10 100 1k 10k
GAIN vs FREQUENCY
G = 1
Frequency (Hz)
NOISE VOLTAGE (RTI) vs FREQUENCY
G = 1
G = 10
G = 100
G = 500
Frequency (Hz)
G = 1000
0.1
0.01
THD+N (%)
0.001
0.0001 20 100 1k 10k 20k
10.0
1
Current Noise Density (pA/ Hz)
0.1 1 10 100 1k 10k
THD+N vs FREQUENCY
G = 1000
G = 100
G = 10
G = 1
Frequency (Hz)
CURRENT NOISE SPECTRAL DENSITY
Frequency (Hz)
VO = 7Vrms R
= 10k
L
140
120
G = 100
100
G = 10
80
G = 1
60
40
Input Referred CMR (dB)
20
0
10 1M
4
CMR vs FREQUENCY
G = 1000
100 1k 10k 100k
Frequency (Hz)
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POWER-SUPPLY REJECTION
140
G = 100, 1000
120
G = 10
100
G = 1
80
60
40
Power-Supply Rejection (dB)
20
0
11M10 100 1k 10k 100k
vs FREQUENCY
Frequency (Hz)
INA217
SBOS247B
TYPICAL CHARACTERISTICS (Cont.)
SETTLING TIME vs GAIN
Settling Time (µs)
Gain
1 10 100 1000
10
8
6
4
2
0
20V Step
0.01%
0.1%
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 100)
20mV/div
10µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 100)
5V/div
2.5µs/div
At TA = +25°C, VS = ±15V, RL = 2k, unless otherwise noted.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
V+
(V+) – 2
(V+) – 4
(V+) – 6 (V–) + 6
(V–) + 4
Output Voltage to Rail (V)
(V–) + 2
V–
0 102030405060
Output Current (mA)
20mV/div
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 1)
2.5µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 1)
5V/div
INA217
SBOS247B
2.5µs/div
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5
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for operation. Power supplies should be bypassed with 0.1µF tantalum capacitors near the device pins. The output Reference (pin 5) should be a low-impedance connection. Resistance of a few ohms in series with this connection will degrade the com­mon-mode rejection of the INA217.
GAIN-SET RESISTOR
Gain is set with an external resistor, RG, as shown in Figure 1. The two internal 5k feedback resistors are laser-trimmed to 5k within approximately ±0.2%. The gain equation for the INA217 is:
=+1
10 000,
R
G
. Avoid
G
.
G
The temperature coefficient of the internal 5k resistors is approximately ±25ppm/°C. Accuracy and TCR of the exter­nal R
will also contribute to gain error and temperature drift.
G
These effects can be inferred from the gain equation. Make a short, direct connection to the gain set resistor, R running output signals near these sensitive input nodes
NOISE PERFORMANCE
The INA217 provides very low noise with low-source imped­ance. Its 1.3nV/ noise performance with a source impedance of 200. The input stage design used to achieve this low noise results in
Hz
voltage noise delivers near-theoretical
relatively high input bias current and input bias current noise. As a result, the INA217 may not provide the best noise performance with a source impedance greater than 10kΩ. For source impedance greater than 10k, other instrumen­tation amplifiers may provide improved noise performance.
INPUT CONSIDERATIONS
Very low source impedance (less than 10) can cause the INA217 to oscillate. This depends on circuit layout, signal source, and input cable characteristics. An input network consisting of a small inductor and resistor, as shown in Figure 2, can greatly reduce any tendency to oscillate. This is especially useful if a variety of input sources are to be connected to the INA217. Although not shown in other figures, this network can be used as needed with all applica­tions shown.
2 1
8 3
V+
7
INA217
4
V–
6
V
O
5
47
VIN–
V
+
IN
1.2µH
1.2µH
47
FIGURE 2. Input Stabilization Network.
VIN–
V
V+
0.1µF
7
2
V
IN
1
R
G
8
V
+
IN
3
V+
Sometimes Shown in Simplified Form: NOTE: (1) NC = No Connection.
R
INA217
G
+
IN
A1
5k
5k
A2
V
O
6k 6k
6k 6k
INA217
A3
4
0.1µF
V–
6
REF 5
V
G = 1 +
OUT
10000
R
G
GAIN R
(V/V) (dB) (Ω)
10NC 2 6 10000
5 14 2500 10 20 1111 20 26 526 50 34 204
100 40 101 200 46 50
500 54 20 1000 60 10 2000 66 5
G
(1)
V–
FIGURE 1. Basic Circuit Connections.
6
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INA217
SBOS247B
OFFSET VOLTAGE TRIM
A variable voltage applied to pin 5, as shown in Figure 3, can be used to adjust the output offset voltage. A voltage applied to pin 5 is summed with the output signal. An op amp connected as a buffer is used to provide a low impedance at pin 5 to assure good common-mode rejection.
V+
2
7
1
8 3
INA217
4
V–
R
G
FIGURE 3. Offset Voltage Adjustment Circuit.
5
6
OPA237
V
O
10k
V+
100µA
150
150
100µA
V–
MICROPHONE AMPLIFIER
Figure 4 shows a typical circuit for a professional microphone input amplifier. R tional 48V phantom power source for a remotely located microphone. An optional switch allows phantom power to be disabled. C the INA217 input circuitry. Non-polarized capacitors should be used for C additional input protection against ESD and hot-plugging, four IN4148 diodes may be connected from the input to supply lines.
R
and R5 provide a path for input bias current of the INA217.
4
Input offset current (typically 100nA) creates a DC differential input voltage that will produce an output offset voltage. This is generally the dominant source of output offset voltage in this application. With a maximum gain of 1000 (60dB), the output offset voltage can be several volts. This may be entirely acceptable if the output is AC-coupled into the subsequent stage. An alternate technique is shown in Figure 4. An inexpensive FET-input op amp in a feedback loop drives the DC output voltage to 0V. A2 is not in the audio signal path and does not affect signal quality.
Gain is set with a variable resistor, R R
determines the maximum gain. The total resistance,
6
R
+ R7, determines the lowest gain. A special reverse-log
6
taper potentiometer for R change (in dB) with rotation.
and R2 provide a current path for conven-
1
and C2 block the phantom power voltage from
1
and C2 if phantom power is to be disabled. For
1
, in series with R6.
7
can be used to create a linear
7
Phantom Power
+48V
R
1
6.8k
1
Female XLR
Connector
NOTES: (1) Use non-polar capacitors if phantom power is to be turned off. (2) R (4) Optional IN4148 prevents damage due to ESD and hot-plugging.
sets maximum gain. (3) R7 sets minimum gain.
6
3
2
R
6.8k
C
47µF
+
C
47µF
+
2
1
60V
2
60V
(1)
(1)
47k
+15V
–15V
R
3
IN4148
+
47µF
+15V
+15V
(2)
R
(4)
R
5
2.2k
6
8
(3)
R
7
1.6k
0.1µF
IN4148
(4)
–15V
R
4
2.2k
7
A1
INA217
4
–15V
0.1µF
5
6
0.1µF
A2
OPA137
V
O
1M
Optional DC output control loop.
FIGURE 4. Phantom-Powered Microphone Preamplifier.
INA217
SBOS247B
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7
PACKAGE OPTION ADDENDUM
www.ti.com
22-Oct-2007
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
INA217AIDWR ACTIVE SOIC DW 16 1000 Green (RoHS &
no Sb/Br)
INA217AIDWRE4 ACTIVE SOIC DW 16 1000 Green (RoHS &
no Sb/Br)
INA217AIDWT ACTIVE SOIC DW 16 250 Green (RoHS &
no Sb/Br)
INA217AIDWTE4 ACTIVE SOIC DW 16 250 Green (RoHS &
no Sb/Br)
INA217AIP ACTIVE PDIP P 8 50 Green (RoHS &
no Sb/Br)
INA217AIPG4 ACTIVE PDIP P 8 50 Green (RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)
Lead/Ball Finish MSL Peak Temp
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
(3)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
TAPE AND REEL INFORMATION
11-Mar-2008
*All dimensions are nominal
Device Package
INA217AIDWR SOIC DW 16 1000 330.0 16.4 10.85 10.8 2.7 12.0 16.0 Q1 INA217AIDWT SOIC DW 16 250 180.0 16.4 10.85 10.8 2.7 12.0 16.0 Q1
Type
Package Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA217AIDWR SOIC DW 16 1000 346.0 346.0 33.0 INA217AIDWT SOIC DW 16 250 184.0 184.0 50.0
Pack Materials-Page 2
MECHANICAL DATA
MPDI001A – JANUARY 1995 – REVISED JUNE 1999
P (R-PDIP-T8) PLASTIC DUAL-IN-LINE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
0.021 (0,53)
0.015 (0,38)
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice. C. Falls within JEDEC MS-001
4
0.070 (1,78) MAX
0.020 (0,51) MIN
0.200 (5,08) MAX
0.125 (3,18) MIN
0.100 (2,54)
0.010 (0,25)
Seating Plane
M
0.325 (8,26)
0.300 (7,62)
0.015 (0,38)
Gage Plane
0.010 (0,25) NOM
0.430 (10,92) MAX
4040082/D 05/98
For the latest package information, go to http://www.ti.com/sc/docs/package/pkg_info.htm
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