TEXAS INSTRUMENTS INA217 Technical data

I

N

A

2

1

7

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SBOS247B – JUNE 2002 – REVISED FEBRUARY 2005

Low-Noise, Low-Distortion

INSTRUMENTATION AMPLIFIER

Replacement for SSM2017

INA217

FEATURES

● LOW NOISE: 1.3nV/√Hz at 1kHz

● LOW THD+N: 0.004% at 1kHz, G = 100

● WIDE BANDWIDTH: 800kHz at G = 100

● WIDE SUPPLY RANGE:

±4.5V to ±18V

● HIGH CMR: > 100dB

● GAIN SET WITH EXTERNAL RESISTOR

● DIP-8 AND SOL-16 WIDEBODY PACKAGES

APPLICATIONS

● PROFESSIONAL MICROPHONE PREAMPS

● MOVING-COIL TRANSDUCER AMPLIFIERS

● DIFFERENTIAL RECEIVERS

● BRIDGE TRANSDUCER AMPLIFIERS

V+

7

INA217

VIN–

RG

2

1

1

A1

5kΩ

6kΩ 6kΩ

DESCRIPTION

The INA217 is a low-noise, low-distortion, monolithic instru­mentation amplifier. Current-feedback circuitry allows the
INA217 to achieve wide bandwidth and excellent dynamic
response over a wide range of gain. The INA217 is ideal for
low-level audio signals such as balanced low-impedance
microphones. Many industrial, instrumentation, and medical
applications also benefit from its low noise and wide band­width.

Unique distortion cancellation circuitry reduces distortion to
extremely low levels, even in high gain. The INA217 provides
near-theoretical noise performance for 200Ω source imped­ance. The INA217 features differential input, low noise, and
low distortion that provides superior performance in profes­sional microphone amplifier applications.

The INA217 features wide supply voltage, excellent output
voltage swing, and high output current drive, making it an
optimal candidate for use in high-level audio stages.

The INA217 is available in the same DIP-8 and SOL-16 wide
body packages and pinouts as the SSM2017. For a smaller
package, see the INA163 in SO-14 narrow. The INA217 is
specified over the temperature range of –40°C to +85°C.

5kΩ

8

RG

2

3

VIN+

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

A2

6kΩ 6kΩ

45

V–

A3

REF

6

V

OUT

10kΩ

G = 1 +

R

www.ti.com

G

Copyright © 2002-2005, Texas Instruments Incorporated

ABSOLUTE MAXIMUM RATINGS

Supply Voltage, V+ to V–.................................................................. ±18V

Signal Input Terminals, Voltage

Output Short-Circuit

Operating Temperature .................................................. –55°C to +125°C

Storage Temperature ..................................................... –55°C to +150°C

Junction Temperature .................................................................... +150°C

Lead Temperature (soldering, 10s)............................................... +300°C

NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. (2) Input terminals are diode-clamped to the power-supply
rails. Input signals that can swing more than 0.5V beyond the supply rails
should be current limited to 10mA or less. (3) Short-circuit to ground, one
amplifier per package.

(3)

(2)

.................. (V–) – 0.5V to (V+) + 0.5V

(2)

Current

.............................................................. Continuous

.................................................... 10mA

(1)

ELECTROSTATIC
DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instru­ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.

ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.

PACKAGE/ORDERING INFORMATION

PRODUCT PACKAGE-LEAD DESIGNATOR MARKING

INA217 SOL-16 DW INA217
INA217 DIP-8 P INA217

NOTES: (1) For the most current package and ordering information, see the
Package Option Addendum at the end of this document, or see the TI website
at www.ti.com.

(1)

PACKAGE PACKAGE

PIN CONFIGURATIONS

Top View

16

NC

15

RG

2

14

NC

13

V+

12

NC

11

V

OUT

10

REF

9

NC

RG

V
V

NC

NC

IN

IN

NC

V–

NC

1
2

1

3
4

–

5

+

6
7
8

RG
VIN–
V

IN

V–

1

1

2
3

+

4

DIP-8

8

RG

2

7

V+

6

V

OUT

5

REF

SOL-16

NC = No Internal Connection

2

www.ti.com

INA217

SBOS247B

ELECTRICAL CHARACTERISTICS: VS = ±15V

Boldface limits apply over the specified temperature range, TA = –40°C to +85°C.

TA = +25°C, RL = 2kΩ, VS = ±15V, unless otherwise noted.

INA217

PARAMETER CONDITIONS MIN TYP MAX UNITS
GAIN EQUATION G = 1 + 10k/R

Range 1 to 10000 V/V
Gain Error, G = 1 ±0.1 ±0.25 %

G = 10 ±0.2 ±0.7 %
G = 100 ±0.2 %
G = 1000 ±0.5 %

Gain Temp Drift Coefficient, G = 1

G > 10

Nonlinearity, G = 1 ±0.0003 % of FS

G = 100 ±0.0006 % of FS

INPUT STAGE NOISE

Voltage Noise R

f

= 1kHz 1.3 nV/

O

fO = 100Hz 1.5 nV/

SOURCE

= 0Ω

fO = 10Hz 3.5 nV/

Current Noise

f

= 1kHz 0.8 pA/

O

OUTPUT STAGE NOISE

Voltage Noise, f

= 1kHz 90 nV/

O

INPUT OFFSET VOLTAGE

Input Offset Voltage V

vs Temperature T

vs Power Supply V

= V

CM

A

= ±4.5V to ±18V 1 + 50/G 3 + 200/G µV/V

S

= 0V 50 + 2000/G 250 + 5000/G µV

OUT

= T

MIN

to T

MAX

1 + 20/G µV/°C

INPUT VOLTAGE RANGE

Common-Mode Voltage Range V

Common-Mode Rejection, G = 1 V

G = 100 100 116 dB

+ – VIN– = 0V (V+) – 4 (V+) – 3V

IN

V

+ – VIN– = 0V (V–) + 4 (V–) + 3 V

IN

= ±11V, R

CM

= 0Ω 70 80 dB

SRC

INPUT BIAS CURRENT

Initial Bias Current 212µA

vs Temperature 10 nA/

Initial Offset Current 0.1 1 µA

vs Temperature 0.5 nA/

INPUT IMPEDANCE

Differential 60 2MΩ  pF

Common-Mode 60 2MΩ  pF

DYNAMIC RESPONSE

Bandwidth, Small Signal, –3dB, G = 1 3.4 MHz

G = 100 800 kHz
Slew Rate 15 V/µs
THD+Noise, f = 1kHz G = 100 0.004 %
Settling Time, 0.1% G = 100, 10V Step 2 µs

0.01% G = 100, 10V Step 3.5 µs

Overload Recovery 50% Overdrive 1 µs

OUTPUT

Voltage R

to GND (V+) – 2 (V+) – 1.8 V

L

(V–) + 2 (V–) + 1.8 V
Load Capacitance Stability 1000 pF
Short-Circuit Current Continuous-to-Common ±60 mA

POWER SUPPLY

Rated Voltage ±15 V
Voltage Range ±4.5 ±18 V
Current, Quiescent I

= 0mA ±10 ±12 mA

O

TEMPERATURE RANGE

Specification –40 +85 °C
Operating –40 +125 °C
Thermal Resistance

DIP-8
SOL-16 +90 °C/W

NOTE: (1) Gain accuracy is a function of external R

θ

JA

.

G

G

±3 ±10 ppm/°C

±40 ±100 ppm/°C

+85 °C/W

√Hz
√Hz
√Hz

√Hz

√Hz

°C
°C

INA217

SBOS247B

www.ti.com

3

TYPICAL CHARACTERISTICS

At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.

70
60
50
40
30
20

Gain (dB)

10

0

–10
–20

1k

100

10

Noise (RTI) (nV/√Hz)

1

G = 1000

G = 100

G = 10

10k 100k 1M 10M

10 100 1k 10k

GAIN vs FREQUENCY

G = 1

Frequency (Hz)

NOISE VOLTAGE (RTI) vs FREQUENCY

G = 1

G = 10

G = 100

G = 500

Frequency (Hz)

G = 1000

0.1

0.01

THD+N (%)

0.001

0.0001
20 100 1k 10k 20k

10.0

1

Current Noise Density (pA/ Hz)

0.1
1 10 100 1k 10k

THD+N vs FREQUENCY

G = 1000

G = 100

G = 10

G = 1

Frequency (Hz)

CURRENT NOISE SPECTRAL DENSITY

Frequency (Hz)

VO = 7Vrms
R

= 10kΩ

L

140

120

G = 100

100

G = 10

80

G = 1

60

40

Input Referred CMR (dB)

20

0

10 1M

4

CMR vs FREQUENCY

G = 1000

100 1k 10k 100k

Frequency (Hz)

www.ti.com

POWER-SUPPLY REJECTION

140

G = 100, 1000

120

G = 10

100

G = 1

80

60

40

Power-Supply Rejection (dB)

20

0

11M10 100 1k 10k 100k

vs FREQUENCY

Frequency (Hz)

INA217

SBOS247B