Texas Instruments TPS51216RUKR, FX004Z Schematics

12

17

16

6

15

14

13

11

V5IN

TPS51216

S3

S5

VREF

VBST

DRVH

SW

DRVL

8

10

REFIN

PGND

7

19

GND

MODE

18 TRIP

20

9

2

3

PGOOD

VDDQSNS

VLDOIN

VTT

1

4

5

VTTSNS

VTTGND

VTTREF

UDG-10138

VDDQ

VTT

PGND

S3

S5

PGND

5VIN

PGND

VIN

VTTREF

AGND

AGND

Powergood

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Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck

Controller, 2-A LDO, Buffered Reference

Check for Samples: TPS51216

1

FEATURES

2

• Synchronous Buck Controller (VDDQ)
– Conversion Voltage Range: 3 V to 28 V
– Output Voltage Range: 0.7 V to 1.8 V
– 0.8% V
– D-CAP™ Mode for Fast Transient Response
– Selectable 300 kHz/400 kHz Switching

Frequencies

– Optimized Efficiency at Light and Heavy

Loads with Auto-skip Function
– Supports Soft-Off in S4/S5 States
– OCL/OVP/UVP/UVLO Protections
– Powergood Output

• 2-A LDO(VTT), Buffered Reference(VTTREF)
– 2-A (Peak) Sink and Source Current
– Requires Only 10-μF of Ceramic Output

Capacitance

– Buffered, Low Noise, 10-mA VTTREF

Output
– 0.8% VTTREF, 20-mV VTT Accuracy
– Support High-Z in S3 and Soft-Off in S4/S5

• Thermal Shutdown

• 20-Pin, 3 mm × 3 mm, QFN Package

Accuracy

REF

TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

DESCRIPTION

The TPS51216 provides a complete power supply for
DDR2, DDR3 and DDR3L memory systems in the
lowest total cost and minimum space. It integrates a
synchronous buck regulator controller (VDDQ) with a
2-A sink/source tracking LDO (VTT) and buffered low
noise reference (VTTREF). The TPS51216 employs
D-CAP™ mode coupled with 300 kHz/400 kHz
frequencies for ease-of-use and fast transient
response. The VTTREF tracks VDDQ/2 within
excellent 0.8% accuracy. The VTT, which provides 2­A sink/source peak current capabilities, requires only
10-μF of ceramic capacitance. In addition, a
dedicated LDO supply input is available.

The TPS51216 provides rich useful functions as well
as excellent power supply performance. It supports
flexible power state control, placing VTT at high-Z in
S3 and discharging VDDQ, VTT and VTTREF (soft­off) in S4/S5 state. Programmable OCL with low-side
MOSFET R

DS(on)

thermal shutdown protections are also available.
The TPS51216 is available in a 20-pin, 3 mm × 3

mm, QFN package and is specified for ambient
temperature from –40°C to 85°C.

sensing, OVP/UVP/UVLO and

APPLICATIONS

• DDR2/DDR3/DDR3L Memory Power Supplies

• SSTL_18, SSTL_15, SSTL_135 and HSTL
Termination

1

2D-CAP is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testingof all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright © 2010–2013, Texas Instruments Incorporated

TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

www.ti.com

ORDERING INFORMATION

T

A

PACKAGE PINS

–40°C to 85°C Plastic Quad Flat Pack (20 pin QFN) 20

ORDERABLE DEVICE OUTPUT MINIMUM

NUMBER SUPPLY QUANTITY

TPS51216RUKR Tape and reel 3000
TPS51216RUKT Mini reel 250

(1)

(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

over operating free-air temperature range (unless otherwise noted)

VALUE UNIT

MIN MAX

VBST –0.3 36

(3)

VBST
SW –5 30

Input voltage range

(2)

VLDOIN, VDDQSNS, REFIN –0.3 3.6 V
VTTSNS –0.3 3.6
PGND, VTTGND –0.3 0.3
V5IN, S3, S5, TRIP, MODE –0.3 6
DRVH –5 36

(3)

DRVH

(3)

Output voltage range

DRVH
VTTREF, VREF –0.3 3.6

(2)

VTT –0.3 3.6

(duty cycle < 1%) –2.5 6

DRVL –0.3 6
DRVL (duty cycle < 1%) –2.5 6

PGOOD –0.3 6
Junction temperature range, T
Storage temperature range, T

J

STG

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.
(3) Voltage values are with respect to the SW terminal.

–0.3 6

–0.3 6

V

125 °C

–55 150 °C

THERMAL INFORMATION

THERMAL METRIC UNITS

θ

θ

θ

ψ

ψ

θ

JA
JCtop
JB

JT
JB

JCbot

Junction-to-ambient thermal resistance 94.1
Junction-to-case (top) thermal resistance 58.1
Junction-to-board thermal resistance 64.3
Junction-to-top characterization parameter 31.8
Junction-to-board characterization parameter 58.0
Junction-to-case (bottom) thermal resistance 5.9

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TPS51216

QFN (20) PINS

°C/W

TPS51216

www.ti.com

RECOMMENDED OPERATING CONDITIONS

Supply voltage V5IN 4.5 5.5 V

VBST –0.1 33.5

(1)

VBST
SW -3 28

(2)

Input voltage range V

Output voltage range VTTREF, VREF –0.1 3.5 V

T

A

(1) Voltage values are with respect to the SW terminal.
(2) This voltage should be applied for less than 30% of the repetitive period.

SW
VLDOIN, VDDQSNS, REFIN –0.1 3.5
VTTSNS –0.1 3.5
PGND, VTTGND –0.1 0.1
S3, S5, TRIP, MODE –0.1 5.5
DRVH –3 33.5

(1)

DRVH

(2)

DRVH

VTT –0.1 3.5
DRVL –0.1 5.5
PGOOD –0.1 5.5
Operating free-air temperature –40 85 °C

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

MIN TYP MAX UNIT

–0.1 5.5

–4.5 28

–0.1 5.5
–4.5 33.5

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TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

ELECTRICAL CHARACTERISTICS

over operating free-air temperature range, VV5IN=5V, VLDOIN is connected to VDDQ output, V
otherwise noted)

PARAMETER TEST CONDITION MIN TYP MAX UNIT

SUPPLY CURRENT

I

V5IN(S0)

I

V5IN(S3)

I

V5INSDN

I

VLDOIN(S0)

I

VLDOIN(S3)

I

VLDOINSDN

VREF OUTPUT

V

VREF

I

VREFOCL

VTTREF OUTPUT

V

VTTREF

V

VTTREF

I

VTTREFOCLSRC

I

VTTREFOCLSNK

I

VTTREFDIS

VTT OUTPUT

V

VTT

V

VTTTOL

I

VTTOCLSRC

I

VTTOCLSNK

I

VTTLK

I

VTTSNSBIAS

I

VTTSNSLK

I

VTTDIS

VDDQ OUTPUT

V

VDDQSNS

V

VDDQSNSTOL

I

VDDQSNS

I

REFIN

I

VDDQDIS

I

VLDOINDIS

SWITCH MODE POWER SUPPLY (SMPS) FREQUENCY

f

SW

t

ON(min)

t

OFF(min)

(1) Ensured by design. Not production tested.

V5IN supply current, in S0 TA= 25°C, No load, VS3= VS5= 5 V 590 μA
V5IN supply current, in S3 TA= 25°C, No load, VS3= 0 V, VS5= 5 V 500 μA
V5IN shutdown current TA= 25°C, No load, VS3= VS5= 0 V 1 μA
VLDOIN supply current, in S0 TA= 25°C, No load, VS3= VS5= 5 V 5 μA
VLDOIN supply current, in S3 TA= 25°C, No load, VS3= 0 V, VS5= 5 V 5 μA
VLDOIN shutdown current TA= 25°C, No load, VS3= VS5= 0 V 5 μA

I

= 30 μA, TA= 25°C 1.8000

VREF

Output voltage 0 μA ≤ I

0 μA ≤ I

Current limit V

VREF

<300 μA, TA= –10°C to 85°C 1.7856 1.8144 V

VREF

<300 μA, TA= –40°C to 85°C 1.7820 1.8180

VREF

= 1.7 V 0.4 0.8 mA

Output voltage V

|I

| <100 μA, 1.2 V ≤ V

Output voltage tolerance to V

VDDQ

Source current limit V
Sink current limit V

VTTREF

|I

| <10 mA, 1.2 V ≤ V

VTTREF
VDDQSNS
VDDQSNS

= 1.8 V, V
= 1.8 V, V

= 0 V 10 18 mA

VTTREF
VTTREF

VTTREF discharge current TA= 25°C, VS3= VS5= 0 V, V

≤ 1.8 V 49.2% 50.8%

VDDQSNS

≤ 1.8 V 49% 51%

VDDQSNS

= 1.8 V 10 17 mA

= 0.5 V 0.8 1.3 mA

VTTREF

Output voltage V

|I

| ≤ 10 mA, 1.2 V ≤ V

VTT

|I

| ≤ 1 A, 1.2 ≤ V

Output voltage tolerance to VTTREF mV

Source current limit 2 3
Sink current limit V

VTT

|I

| ≤ 2 A, 1.4 V ≤ V

VTT

|I

| ≤ 1.5 A, 1.2 V ≤ V

VTT

V

VDDQSNS

I

= 0 A

VTTREF

VDDQSNS

= 1.8 V, V

= 1.8V, V

VDDQSNS

VDDQSNS

VDDQSNS

VTT

= V

VTT

Leakage current TA= 25°C , VS3= 0 V, VS5= 5 V, V
VTTSNS input bias current VS3= 5 V, VS5= 5 V, V
VTTSNS leakage current VS3= 0 V, VS5= 5 V, V

VTT Discharge current 7.8 mA

TA= 25°C, VS3= VS5= 0 V, V
V

= 0.5 V, I

VTT

VTTREF

VTTSNS
VTTSNS

= 0 A

VDDQSNS

≤ 1.8 V, I

= V

VTTSNS

VTTSNS

≤ 1.8 V, I

≤ 1.8 V, I

≤ 1.4 V, I

= 0.7 V,

= 1.1 V, I

VTT

= V

VTTREF

= V

VTTREF

VDDQSNS

= 0 A –20 20

VTTREF

= 0 A –30 30

VTTREF

= 0 A –40 40

VTTREF

= 0 A –40 40

VTTREF

= 0 A 2 3

VTTREF

= V

VTTREF

–0.5 0.0 0.5 μA

= 1.8 V,

VDDQ sense voltage V
VDDQSNS regulation voltage

tolerance to REFIN
VDDQSNS input current V
REFIN input current V

VDDQ discharge current 12 mA

VLDOIN discharge current 1.2 A

VDDQ switching frequency kHz

Minimum on time DRVH rising to falling

TA= 25°C –3 3 mV

= 1.8 V 39 μA

VDDQSNS

= 1.8 V –0.1 0.0 0.1 μA

REFIN

VS3= VS5= 0 V, V
down to GND through 47kΩ (Non-tracking)

VS3= VS5= 0 V, V
down to GND through 100kΩ (Non-tracking)

VIN= 12 V, V
VIN= 12 V, V

VDDQSNS
VDDQSNS

= 0.5 V, MODE pin pulled

VDDQSNS

= 0.5 V, MODE pin pulled

VDDQSNS

= 1.8 V, R
= 1.8 V, R

(1)

MODE
MODE

= 100 kΩ 300
= 200 kΩ 400

Minimum off time DRVH falling to rising 200 320 450

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=0V, VS3=VS5=5V (unless

MODE

/2 V

VDDQSNS

VTTREF

–1 0 1

REFIN

60

V

A

5

ns

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SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

ELECTRICAL CHARACTERISTICS (continued)

over operating free-air temperature range, VV5IN=5V, VLDOIN is connected to VDDQ output, V
otherwise noted)

PARAMETER TEST CONDITION MIN TYP MAX UNIT

VDDQ MOSFET DRIVER

R

R

t

DEAD

DRVH

DRVL

DRVH resistance

DRVL resistance

Dead time ns

INTERNAL BOOT STRAP SW

V

FBST

I

VBSTLK

Forward Voltage V
VBST leakage current TA= 25°C, V

LOGIC THRESHOLD

I

MODE

V

THMODE

V

IL

V

IH

V

IHYST

V

ILK

MODE source current 14 15 16 μA

MODE threshold voltage mV

S3/S5 low-level voltage 0.5
S3/S5 high-level voltage 1.8 V
S3/S5 hysteresis voltage 0.25
S3/S5 input leak current –1 0 1 μA

SOFT START

t

SS

VDDQ soft-start time 1.1 ms

PGOOD COMPARATOR

V

THPG

I

PG

t

PGDLY

t

PGSSDLY

VDDQ PGOOD threshold

PGOOD sink current V

PGOOD delay time

PGOOD start-up delay C

Source, I
Sink, I
Source, I
Sink, I
DRVH-off to DRVL-on 10
DRVL-off to DRVH-on 20

V5IN-VBST

MODE 0 580 600 620
MODE 1 829 854 879
MODE 2 1202 1232 1262
MODE 3 1760 1800 1840

Internal soft-start time, C
S5 rising to V

PGOOD in from higher 106% 108% 110%
PGOOD in from lower 90% 92% 94%
PGOOD out to higher 114% 116% 118%
PGOOD out to lower 82% 84% 86%

PGOOD

Delay for PGOOD in 0.8 1 1.2 ms
Delay for PGOOD out, with 100 mV over drive 330 ns

VREF

= –50 mA 1.6 3.0

DRVH

= 50 mA 0.6 1.5

DRVH

= –50 mA 0.9 2.0

DRVL

= 50 mA 0.5 1.2

DRVL

, TA= 25°C, IF= 10 mA 0.1 0.2 V

= 33 V, VSW= 28 V 0.01 1.5 μA

VBST

= 0.1 μF,

VREF

> 0.99 × V

VDDQSNS

REFIN

= 0.5 V 3 5.9 mA

= 0.1 μF, S5 rising to PGOOD rising 2.5 ms

TPS51216

=0V, VS3=VS5=5V (unless

MODE

Ω

Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 5

Product Folder Links :TPS51216

TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

ELECTRICAL CHARACTERISTICS (continued)

over operating free-air temperature range, VV5IN=5V, VLDOIN is connected to VDDQ output, V
otherwise noted)

PARAMETER TEST CONDITION MIN TYP MAX UNIT

PROTECTIONS

I

TRIP

TC

ITRIP

V

TRIP

V

OCL

V

OCLN

V

ZC

V

UVLO

V

OVP

t

OVPDLY

V

UVP

t

UVPDLY

t

UVPENDLY

V

OOB

THERMAL SHUTDOWN

T

SDN

TRIP source current TA= 25°C, V
TRIP source current temperature

coefficient
V

Current limit threshold V

Negative current limit threshold V

(2)

voltage range 0.2 3 V

TRIP

V

= 3.0 V 360 375 390

TRIP

= 1.6 V 190 200 210 mV

TRIP

V

= 0.2 V 20 25 30

TRIP

V

= 3.0 V –390 –375 –360

TRIP

= 1.6 V –210 –200 –190 mV

TRIP

V

= 0.2 V –30 –25 –20

TRIP

= 0.4 V 9 10 11 μA

TRIP

Zero cross detection offset 0 mV

V5IN UVLO threshold voltage V

Wake-up 4.2 4.4 4.5

Shutdown 3.7 3.9 4.1
VDDQ OVP threshold voltage OVP detect voltage 118% 120% 122%
VDDQ OVP propagation delay With 100 mV over drive 430 ns
VDDQ UVP threshold voltage UVP detect voltage 66% 68% 70%
VDDQ UVP delay 1 ms
VDDQ UVP enable delay 1.2 ms
OOB Threshold voltage 108%

Thermal shutdown threshold °C

Shutdown temperature

Hysteresis

(2)

(2)

=0V, VS3=VS5=5V (unless

MODE

4700 ppm/°C

140

10

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(2) Ensured by design. Not production tested.

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Product Folder Links :TPS51216

1

2

3

4

5

6

7

8 9

10

11

12

13

14

15

16

17

1819

20

TPS51216

PowerPAD™

VTTSNS

VLDOIN

VTT

VTTGND

VTTREF

VREF

GND

REFIN

VDDQSNS

PGND

DRVL

V5IN

SW

DRVH

VBST

S5

S3

TRIP

MODE

PGOOD

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TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

DEVICE INFORMATION

RUK PACKAGE (TOP VIEW)

PIN FUNCTIONS

PIN

NAME NO.

DRVH 14 O High-side MOSFET gate driver output.
DRVL 11 O Low-side MOSFET gate driver output.
GND 7 – Signal ground.
MODE 19 I Connect resistor to GND to configure switching frequency and discharge mode. (See Table 2)
PGND 10 – Gate driver power ground. R
PGOOD 20 O Powergood signal open drain output. PGOOD goes high when VDDQ output voltage is within the target range.

REFIN 8 I
SW 13 I/O High-side MOSFET gate driver return. R

S3 17 I S3 signal input. (See Table 1)
S5 16 I S5 signal input. (See Table 1)
TRIP 18 I Connect resistor to GND to set OCL at V
VBST 15 I High-side MOSFET gate driver bootstrap voltage input. Connect a capacitor from the VBST pin to the SW pin.
VDDQSNS 9 I VDDQ output voltage feedback. Reference input for VTTREF. Also serves as power supply for VTTREF.
VLDOIN 2 I Power supply input for VTT LDO. Connect VDDQ in typical application.
VREF 6 O 1.8-V reference output.
VTT 3 O VTT 2-A LDO output. Need to connect 10μF or larger capacitance for stability.
VTTGND 4 – Power ground for VTT LDO.
VTTREF 5 O Buffered VTT reference output. Need to connect 0.22μF or larger capacitance for stability.
VTTSNS 1 I VTT output voltage feedback.
V5IN 12 I 5-V power supply input for internal circuits and MOSFET gate drivers.
Thermal

pad

I/O DESCRIPTION

current sensing input(+).

DS(on)

Reference input for VDDQ. Connect to the midpoint of a resistor divider from VREF to GND. Add a capacitor for
stable operation.

current sensing input(–).

DS(on)

/8. Output 10-μA current at room temperature, TC= 4700 ppm/°C.

TRIP

– – Connect to GND

Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 7

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1013PGND

SW

TPS51216

OC

ZC

XCON

15

VBST

12 V5IN

PWM

9

REFIN

TRIP

Delay

20 PGOOD

Control Logic

UDG-10135

10 mA

+

+

V

REFIN

+20%

+

+

8

VDDQSNS

+
+

18

14 DRVH

11 DRVL

t

ON

One­Shot

UV

OV

V

REFIN

–32%

16S5

Soft-Start

+

NOC

+

8 R

6VREF Reference

R

7GND

17S3

5VTTREF

1VTTSNS

4 VTTGND

3 VTT

+

+

+

+

2 VLDOIN

7 R

R

VTT Discharge

VTTREF Discharge

On-Time

Discharge Type

Selection

15 mA

19 MODE

V

REFIN

+8/16 %

V

REFIN

–8/16 %

+

+

VDDQ
Discharge

V5OK

+

4.4 V/3.9 V

UVP

OVP

TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

FUNCTIONAL BLOCK DIAGRAM

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50

60

70

80

90

100

110

120

130

140

150

−50 −25 0 25 50 75 100 125
Junction Temperature (°C)

OVP/UVP Threshold (%)

OVP
UVP

0

3

6

9

12

15

−50 −25 0 25 50 75 100 125
Junction Temperature (°C)

VDDQSNS Discharge Current (mA)

0

2

4

6

8

10

−50 −25 0 25 50 75 100 125
Junction Temperature (°C)

VLDOIN Suppy Current (µA)

4

6

8

10

12

14

16

−50 −25 0 25 50 75 100 125
Junction Temperature (°C)

TRIP Source Current (µA)

0

200

400

600

800

1000

−50 −25 0 25 50 75 100 125
Junction Temperature (°C)

V5IN Suppy Current (µA)

0

2

4

6

8

10

−50 −25 0 25 50 75 100 125
Junction Temperature (°C)

V5IN Shutdown Current (µA)

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Figure 1. V5IN Supply Current vs Junction Temperature Figure 2. V5IN Shutdown Current vs Junction Temperature

TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

TYPICAL CHARACTERISTICS

Figure 3. VLDOIN Supply Current vs Junction Temperature Figure 4. Current Sense Current vs Junction Temperature

Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 9

Figure 5. OVP/UVP Threshold vs Junction Temperature Figure 6. VDDQSNS Discharge Current vs Junction

Temperature

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0

100

200

300

400

500

600

700

800

0 2 4 6 8 10 12 14 16 18 20

VDDQ Output Current (A)

Switching Frequency (kHz)

V

VDDQ

= 1.20 V

V

VDDQ

= 1.35 V

V

VDDQ

= 1.50 V

R

MODE

= 200 kΩ

VIN = 12 V

1.45

1.46

1.47

1.48

1.49

1.50

1.51

1.52

1.53

1.54

1.55

0 2 4 6 8 10 12 14 16 18 20

VDDQ Output Current (A)

VDDQ Output Voltage (V)

R

MODE

= 200 kΩ

VIN = 12 V

200

300

400

500

600

700

800

6 8 10 12 14 16 18 20 22

Input Voltage (V)

Switching Frequency (kHz)

V

VDDQ

= 1.20 V

V

VDDQ

= 1.35 V

V

VDDQ

= 1.50 V

R

MODE

= 200 kΩ

I

VDDQ

= 10 A

0

100

200

300

400

500

600

700

800

0 2 4 6 8 10 12 14 16 18 20

VDDQ Output Current (A)

Switching Frequency (kHz)

V

VDDQ

= 1.20 V

V

VDDQ

= 1.35 V

V

VDDQ

= 1.50 V

R

MODE

= 100 kΩ

VIN = 12 V

0

2

4

6

8

10

−50 −25 0 25 50 75 100 125
Junction Temperature (°C)

VTT Discharge Current (mA)

200

300

400

500

600

700

800

6 8 10 12 14 16 18 20 22

Input Voltage (V)

Switching Frequency (kHz)

V

VDDQ

= 1.20 V

V

VDDQ

= 1.35 V

V

VDDQ

= 1.50 V

R

MODE

= 100 kΩ

I

VDDQ

= 10 A

TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

TYPICAL CHARACTERISTICS (continued)

Figure 7. VTT Discharge Current vs Junction Temperature Figure 8. Switching Frequency vs Input Voltage

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Figure 9. Switching Frequency vs Input Voltage Figure 10. Switching Frequency vs Load Current

Figure 11. Switching Frequency vs Load Current Figure 12. Load Regulation

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0.710

0.720

0.730

0.740

0.750

0.760

0.770

0.780

0.790

−2.0 −1.5 −1.0 −0.5 0.0 0.5 1.0 1.5 2.0
VTT Current (V)

VTT Voltage (V)

V

VDDQ

= 1.5 V

0.635

0.645

0.655

0.665

0.675

0.685

0.695

0.705

0.715

−2.0 −1.5 −1.0 −0.5 0.0 0.5 1.0 1.5 2.0
VTT Current (V)

VTT Voltage (V)

V

VDDQ

= 1.35 V

0.650

0.655

0.660

0.665

0.670

0.675

0.680

0.685

0.690

0.695

−10 −5 0 5 10
VTTREF Current (mA)

VTTREF Voltage (V)

V

VDDQ

= 1.35 V

0.580

0.585

0.590

0.595

0.600

0.605

0.610

0.615

0.620

−10 −5 0 5 10
VTTREF Current (mA)

VTTREF Voltage (V)

V

VDDQ

= 1.2 V

1.45

1.46

1.47

1.48

1.49

1.50

1.51

1.52

1.53

1.54

1.55

6 8 10 12 14 16 18 20 22

Input Voltage (V)

VDDQ Output Voltage (V)

I

VDDQ

= 0 A

I

VDDQ

= 20 A

R

MODE

= 200 kΩ

0.730

0.735

0.740

0.745

0.750

0.755

0.760

0.765

0.770

−10 −5 0 5 10
VTTREF Current (mA)

VTTREF Voltage (V)

V

VDDQ

= 1.5 V

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TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

TYPICAL CHARACTERISTICS (continued)

Figure 13. Line Regulation Figure 14. VTTREF Load Regulation

Figure 15. VTTREF Load Regulation Figure 16. VTTREF Load Regulation

Figure 17. VTT Load Regulation Figure 18. VTT Load Regulation

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