Texas Instruments CY74FCT543TSOCT, CY74FCT543TSOC, CY74FCT543TQCT, CY74FCT543TQC, CY74FCT543CTSOCT Datasheet
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8-Bit Latched Registered Transceive
r
CY54/74FCT543T
SCCS030 - May 1994 - Revised March 2000
Data sheet acquired from Cypress Semiconductor Corporation.
Data sheet modified to remove devices not offered.
Copyright © 2000, Texas Instruments Incorporated
Features
• Function, pinout, and drive compatible with FCT and
F logic
• FCT-C speed at 5.3 ns max. (Com’l)
FCT-A speed at 6.5 ns max. (Com’l)
• Reduced V
OH
(typically = 3.3V) versions of equivalent
FCT functions
• Edge-rate control circuitry for significantly improved
noise characteristics
• Power-off disable feature
• Matched rise and fall times
• Fully compatible with TTL input and output logic levels
• ESD > 2000V
• Sink current 64 mA (Com’l), 48 mA (Mil)
Source current 32 mA (Com’l), 12 mA (Mil)
• Separation controls for data flow in each direction
• Back to back latches for storage
• Extended commercial range of −40˚C to +85˚C
Functional Description
The FCT543T octal latched transceiver contains two sets of
eight D-type latches with separate latch enable (
LEAB, LEBA)
and output enable (
OEAB, OEBA) controls for each set to
permit independent control of inputting and outputting in either
direction of data flow. For data flow from A to B, for example,
the A-to-B enable (
CEAB) input must be LOW in order to enter
data from A or to take data from B, as indicated in the truth
table. With
CEAB LOW, a LOW signal on the A-to-B latch
enable (
LEAB) input makes the A-to-B latches transparent; a
subsequent LOW-to-HIGH transition of the
LEAB signal puts
the A latches in the storage mode and their output no longer
change with the A inputs. With
CEAB and OEAB both LOW,
the three-stage B output buffersare activeand reflect the data
present at the output of the A latches. Control of data from B
to A is similar, but uses
CEAB, LEAB, and OEAB inputs.
The outputs are designed with a power-off disable feature to
allow for liv e insertion of boards.
Logic Block Diagram
Pin
Configurations
LE
D
Q
LE
DQ
DetailA
DetailA x 7
A
0
A
2
A
1
A
3
A
4
A
6
A
5
A
7
B
0
B
2
B
1
B
3
B
4
B
6
B
5
B
7
OEBA
CEBA
LEBA
OEAB
CEAB
LEAB
Functional Block Diagram
A1A2A3A4A5A6A
7
A
0
B1B2B3B4B5B6B
7
B
0
LEBA
LEAB
CEBA
CEAB
OEBA
OEAB
1
2
3
4
5
6
7
8
9
10
11
12
16
17
18
19
20
24
23
22
21
13
14
V
CC
15
SOIC/QSOP
Top View
LEBA
A
1
A
2
A
3
A
4
A
5
A
6
A
7
CEAB
B
1
B
2
B
3
B
4
B
5
B
6
B
7
OEAB
CEBA
OEBA
A
0
GND
B
0
LEAB
CY54/74FCT543T
2
Maximum Ratings
[4, 5]
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied.............................................–65°C to +135°C
Supply Voltage to Ground Potential............... –0.5V to +7.0V
DC Input Voltage ........................................... –0.5V to +7.0V
DC Output Voltage......................................... –0.5V to +7.0V
DC Output Current (Maximum Sink Current/Pin) ......120 mA
Power Dissipation..........................................................0.5W
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Notes:
1. H = HIGH Voltage Level. L = LOW Voltage Level. X = Don’t Care.
2. A-to-B data flow shown: B-to-A flow control is the same, except using
CEBA, LEBA, and OEBA.
3. Before LEAB LOW-to-HIGH Transition.
4. Unless otherwise noted, these limits are over the operating free-air temperature range.
5. Unused inputs must always be connected to an appropriate logic voltage level, preferably either VCC or ground.
6. T
A
is the “instant on” case temperature.
Pin Description
Name Description
OEAB A-to-B Output Enable Input (Active LOW)
OEBA B-to-A Output Enable Input (Active LOW)
CEAB A-to-B Enable Input (Active LOW)
CEBA B-to-A Enable Input (Active LOW)
LEAB A-to-B Latch Enable Input (Active LOW)
LEBA B-to-A Latch Enable Input (Active LOW)
A A-to-B Data Inputs or B-to-A Three-State Outputs
B B-to-A Data Inputs or A-to-B Three-State Outputs
Function Table
[1, 2]
Inputs Latch Outputs
CEAB LEAB OEAB A-to-B
[3]
B
H X X Storing High Z
X H X Storing X
X X H X High Z
L L L Transpar-
ent
Current A Inputs
L H L Storing Previous A Inputs
Operating Range
Range Range
Ambient
Temperature V
CC
Commercial DT 0°C to +70°C 5V ± 5%
Commercial T, AT, CT –40°C to +85°C 5V ± 5%
Military
[6]
All –55°C to +125°C 5V ± 10%
CY54/74FCT543T
3
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions Min. Typ.
[7]
Max. Unit
V
OH
Output HIGH Voltage VCC=Min., IOH=–32 mA Com’l 2.0 V
VCC=Min., IOH=–15 mA Com’l 2.4 3.3 V
VCC=Min., IOH=–12 mA Mil 2.4 3.3 V
V
OL
Output LOW Voltage VCC=Min., IOL=64 mA Com’l 0.3 0.55 V
VCC=Min., IOL=48mA Mil 0.3 0.55 V
V
IH
Input HIGH Voltage 2.0 V
V
IL
Input LOW Voltage 0.8 V
V
H
Hysteresis
[8]
All inputs 0.2 V
V
IK
Input Clamp Diode Voltage VCC=Min., IIN=–18 mA –0.7 –1.2 V
I
IH
Input HIGH Current VCC=Max., VIN=V
CC
5 µA
I
IH
Input HIGH Current
[8]
VCC=Max., VIN=2.7V ±1 µA
I
IL
Input LOW Current
[8]
VCC=Max., VIN=0.5V ±1 µA
I
OZH
Off State HIGH-Level Output
Current
VCC=Max., V
OUT
= 2.7V 10 µA
I
OZL
Off State LOW-Level
Output Current
VCC= Max., V
OUT
= 0.5V –10 µA
I
OS
Output Short Circuit Current
[9]
VCC=Max., V
OUT
=0.0V –60 –120 –225 mA
I
OFF
Power-Off Disable VCC=0V, V
OUT
=4.5V ±1 µA
Capacitance
[8]
Parameter Description Typ.
[7]
Max. Unit
C
IN
Input Capacitance 5 10 pF
C
OUT
Output Capacitance 9 12 pF
Notes:
7. Typical values are at V
CC
=5.0V, TA=+25˚C ambient.
8. This parameter is specified but not tested.
9. Not more than one output should be shortedat a time. Duration of short should not exceed one second. The use of high-speed test apparatus and/or sample
and hold techniques are preferable in order to minimize internal chip heating and more accurately reflect operational values. Otherwise prolonged shorting of
a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parametric tests. In any sequence of parameter
tests, I
OS
tests should be performed last.
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