CY74FCT2646T
4
Capacitance
[7]
Parameter Description Typ.
[6]
Max. Unit
C
IN
Input Capacitance 6 10 pF
C
OUT
Output Capacitance 8 12 pF
Power Supply Characteristics
Parameter Description Test Conditions Typ.
[6]
Max. Unit
I
CC
Quiescent Power Supply Current VCC=Max., VIN≤0.2V,
V
IN≥VCC
–0.2V
0.1 0.2 mA
∆I
CC
Quiescent Power Supply Current
(TTL inputs HIGH)
VCC=Max., VIN=3.4V,
[9]
f1=0, Outputs Open
0.5 2.0 mA
I
CCD
Dynamic Power Supply Current
[10]
VCC=Max., One Input Toggling,
50% Duty Cycle, Outputs Open,
G=DIR=GND, GAB=GBA=GND,
V
IN
≤0.2V or VIN≥VCC–0.2V
0.06 0.12 mA/
MHz
I
C
Total Power Supply Current
[11]
VCC=Max., f0=10 MHz,
50% Duty Cycle, Outputs Open,
One Bit Toggling at f
1
=5 MHz,
G=DIR=GND, GAB=GBA=GND,
V
IN
≤0.2V or VIN≥VCC–0.2V
0.7 1.4 mA
VCC=Max., f0=10 MHz,
50% Duty Cycle, Outputs Open,
One Bit Toggling at f
1
=5 MHz,
G=DIR=GND, GAB=GBA=GND,
V
IN
=3.4V or VIN=GND
1.2 3.4 mA
VCC=Max., f0=10 MHz,
50% Duty Cycle, Outputs Open,
Eight Bits Toggling at f
1
=5 MHz,
G=DIR=GND, GAB=GBA=GND,
V
IN
≤0.2V or VIN≥VCC–0.2V
2.8 5.6
[12]
mA
VCC=Max., f0=10 MHz,
50% Duty Cycle, Outputs Open,
Eight Bits Toggling at f
1
=5 MHz,
G=DIR=GND, GAB=GBA=GND,
V
IN
=3.4V or VIN=GND
5.1 14.6
[12]
mA
Notes:
9. Per TTL driven input (V
IN
=3.4V); all other inputs at VCC or GND.
10. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
11. I
C
=I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
IC=ICC+∆ICCDHNT+I
CCD(f0
/2 + f1N1)
I
CC
= Quiescent Current with CMOS input levels
∆I
CC
= Power Supply Current for a TTL HIGH input (VIN=3.4V)
D
H
= Duty Cycle for TTL inputs HIGH
N
T
= Number of TTL inputs at D
H
I
CCD
= Dynamic Current caused by an input transition pair (HLH or LHL)
f
0
= Clock frequency for registered devices, otherwise zero
f
1
= Input signal frequency
N
1
= Number of inputs changing at f
1
All currents are in milliamps and all frequencies are in megahertz.
12. Values for these conditions are examples of the ICC formula. These limits are specified but not tested.