The VNN3NV04P-E, VNS3NV04P-E, are
monolithic devices designed in
STMicroelectronics
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
®
VIPower® M0-3 Technology,
Table 1.Device summary
Order codes
Package
TubeTape and reel
SOT-223—VNN3NV04PTR-E
SO-8VNS3NV04P-EVNS3NV04PTR-E
May 2012Doc ID 15626 Rev. 41/22
This is information on a product in full production.
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current
I
(typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
ISS
The device integrates:
●Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
●Linear current limiter circuit: limits the drain current I
voltages. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the over temperature threshold T
●Overtemperature and short circuit protection: these are based on sensing the chip
jsh
.
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Overtemperature cutout occurs in the range 150°C to 190°C, a
typical value being 170°C. The device is automatically restarted when the chip
temperature falls of about 15°C below shutdown temperature.
●Status feedback: in the case of an overtemperature fault condition (T
tries to sink a diagnostic current I
through the input pin in order to indicate fault
gf
condition. If driven from a low impedance source, this current may be used in order to
warn the control circuit of a device shutdown. If the drive impedance is high enough so
that the input pin driver is not able to supply the current I
This will not however affect the device operation: no requirement is put on the current
capability of the input pin driver except to be able to supply the normal operation drive
current I
ISS
.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL logic circuit.
to I
D
whatever the input pin
lim
> T
j
jsh
, the input pin will fall to 0 V.
gf
), the device
Doc ID 15626 Rev. 49/22
Protection featuresVNN3NV04P-E, VNS3NV04P-E
R
gen
V
gen
V
D
t
I
D
90%
10%
t
V
gen
t
d(on)
t
d(off)
t
f
t
r
L=100uH
A
B
8.5
Ω
V
DD
R
gen
FAST
DIODE
OMNIFET
A
D
I
S
220
Ω
B
OMNIFET
D
S
I
V
gen
Figure 4.Switching time test circuit for resistive load
Figure 5.Test circuit for diode recovery times
10/22Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-EProtection features
GEN
ND8003
VIN
Figure 6.Unclamped inductive load test
Figure 7.Input charge test circuit
circuits
Figure 8.Unclamped inductive waveforms
Doc ID 15626 Rev. 411/22
Protection featuresVNN3NV04P-E, VNS3NV04P-E
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Id (A)
0
1
2
3
4
5
6
7
8
9
10
11
Gfs (S)
Vds=13V
Tj=25ºC
Tj=150ºC
Tj=-40ºC
33.544.555.566.5
Vin(V)
0
25
50
75
100
125
150
175
200
225
250
275
300
Rds(on) (mohms)
Id=3.5A
Id=1A
Id=3.5A
Id=1A
Id=3.5A
Id=1A
Tj=25ºC
Tj=150ºC
Tj=-40ºC
33.544.555.5 6 6.5
Vin(V)
0
25
50
75
100
125
150
175
200
225
250
Rds(on) (mohms)
Id=1.5A
Tj=150ºC
Tj=-40ºC
Tj=25ºC
0123456789101112
Id (A)
600
650
700
750
800
850
900
950
1000
1050
1100
Vsd (mV)
Vin=0V
3.1 Electrical characteristics curves
Figure 9.Thermal impedance for SOT-223Figure 10. Derating curve
Figure 11. TransconductanceFigure 12. Static drain-source on resistance
vs input voltage (part 1/2)
Figure 13. Static drain-source on resistance
vs input voltage (part 2/2)
12/22Doc ID 15626 Rev. 4
Figure 14. Source-drain diode forward
characteristics
VNN3NV04P-E, VNS3NV04P-EProtection features
00.050.10.150.20.250.3
Id(A)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Rds(on) (ohms)
Tj=25ºC
Tj=150ºC
Tj=-40ºC
Vin=2.5V
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
di/dt(A/us)
Vin=5V
Vdd=15V
Id=1.5A
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
di/dt(A/ usec)
Vin=3.5V
Vdd=15V
Id=1.5A
1.5
1.7522.25
2.5
2.7533.25
3.5
3.7544.25
4.5
4.75
5
Vin(V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Idon(A)
Vds=13.5V
Tj=150ºC
Tj=25ºC
Tj=-40ºC
00.511.522.533.54
Id (A)
0
25
50
75
100
125
150
175
200
225
250
Rds(on) (mohms)
Tj=25ºC
Tj=150ºC
Tj= - 40ºC
Vin=5V
0123456
Qg (nC)
0
1
2
3
4
5
6
Vin (V)
Vds=12V
Id=0.5A
Figure 15. Static drain source on resistanceFigure 16. Turn-on current slope (part 1/2)
Figure 17. Turn-on current slope (part 2/2)Figure 18. Transfer characteristics
Package and packing informationVNN3NV04P-E, VNS3NV04P-E
0046067
4 Package and packing information
In order to meet environmental requirements, ST offers these devices in different grades of
®
ECOPACK
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
4.1 SOT-223 mechanical data
T able 5.SOT-223 mechanical data
Symbol
Min.Typ.Max.
A1.8
B0.60.70.85
B12.933.15
c0.240.260.35
D6.36.56.7
e2.3
e14.6
E3.33.53.7
.
Millimeters
H6.777.3
V10 (max)
A10.020.1
Figure 31. SOT-223 package dimensions
16/22Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-EPackage and packing information
4.2 SO-8 mechanical data
T able 6.SO-8 mechanical data
Millimeters
Symbol
MinTypMax
A1.75
a10.10.25
a21.65
a30.650.85
b0.350.48
A 1.75
A1 0.10 0.25
A2 1.25
b 0.28 0.48
c 0.17 0.23
(1)
D
4.80 4.90 5.00
E 5.80 6.00 6.20
(2)
E1
3.80 3.90 4.00
e 1.27
h 0.25 0.50
L 0.40 1.27
L1 1.04
k 0°8°
ccc 0.10
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
Doc ID 15626 Rev. 417/22
Package and packing informationVNN3NV04P-E, VNS3NV04P-E
0016023 D
Figure 32. SO-8 package dimensions
18/22Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-EPackage and packing information
REEL DIMENSIONS
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)12.4
N (min)60
T (max)18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Base Q.ty2500
Bulk Q.ty2500
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)12.4
N (min)60
T (max)18.4
4.4 SO-8 packing information
Figure 34. SO-8 tube shipment (no suffix)
Figure 35. SO-8 tape and reel shipment (suffix “TR”)
20/22Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-ERevision history
5 Revision history
Table 7.Document revision history
DateRevisionChanges
24-May-20091Initial release.
21-Jul-20092Updated Table 1: Device summary.
29-Sep_20093Removed target specification on cover page.
Updated Table 1: Device summary
10-May-20124
Table 2: Absolute maximum ratings:
–R
: changed unit to Ω (it was W)
IN MIN
Doc ID 15626 Rev. 421/22
VNN3NV04P-E, VNS3NV04P-E
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