Datasheet VNN3NV04P-E, VNS3NV04P-E Datasheet (ST)

SOT-223
SO-8
1
2
2
3
Type R
VNN3NV04P-E VNS3NV04P-E
Linear current limitation
Thermal shutdown
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the Power
DS(on)
120 mΩ 3.5 A 40 V
MOSFET (analog driving)
Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European directive
I
lim
V
clamp
VNN3NV04P-E
VNS3NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Datasheet production data
Description
The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in STMicroelectronics intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
®
VIPower® M0-3 Technology,

Table 1. Device summary

Order codes
Package
Tube Tape and reel
SOT-223 VNN3NV04PTR-E
SO-8 VNS3NV04P-E VNS3NV04PTR-E
May 2012 Doc ID 15626 Rev. 4 1/22
This is information on a product in full production.
www.st.com
1
Contents VNN3NV04P-E, VNS3NV04P-E
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.1 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.4 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-E List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 7. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Doc ID 15626 Rev. 4 3/22
List of figures VNN3NV04P-E, VNS3NV04P-E
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 9. Thermal impedance for SOT-223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 10. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 12. Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 13. Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 14. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 15. Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 16. Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 17. Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 18. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 19. Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 20. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 21. Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 22. Turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 23. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 24. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 25. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 26. Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 27. Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 28. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 29. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 30. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 31. SOT-223 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 32. SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 33. SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 34. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 35. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4/22 Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-E Block diagram and pin description
Overvoltage
Gate
Linear
DRAIN
SOURCE
Clamp
1
2
3
Current
Limiter
Control
Over
Temperature
INPUT
FC01000
SO-8 Package
(1)
DRAIN
DRAIN
DRAIN
DRAIN
INPUT
SOURCE
SOURCE
SOURCE
1
4
5
8

1 Block diagram and pin description

Figure 1. Block diagram

Figure 2. Configuration diagram (top view)

1. For the pins configuration related to SOT-223 see outlines at page 1.
Doc ID 15626 Rev. 4 5/22
Electrical specifications VNN3NV04P-E, VNS3NV04P-E
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN

2 Electrical specifications

Figure 3. Current and voltage conventions

2.1 Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol Parameter
V
V
R
IN MIN
V
ESD1
V
ESD2
P
T
DS
IN
I
IN
I
D
I
R
tot
T
T
stg
Drain-source voltage (VIN= 0 V) Internally clamped V
Input voltage Internally clamped V
Input current +/-20 mA
Minimum input series impedance 220 Ω
Drain current Internally limited A
Reverse DC output current -5.5 A
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF) 4000 V
Electrostatic discharge on output pin only (R = 330 Ω, C = 150 pF)
Total dissipation at Tc=25°C 7 8.3 W
Operating junction temperature Internally limited °C
j
Case operating temperature Internally limited °C
c
Storage temperature -55 to 150 °C
Value
Unit
SOT-223 SO-8
16500 V
6/22 Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-E Electrical specifications

2.2 Thermal data

Table 3. Thermal data

Value
Symbol Parameter
SOT-223 SO-8
Unit
R
thj-case
R
thj-lead
R
thj-amb
1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 mm thick) connected to all DRAIN pins.
Thermal resistance junction-case max 18 °C/W
Thermal resistance junction-lead max 15 °C/W
Thermal resistance junction-ambient max 70
(1)
65
(1)

2.3 Electrical characteristics

-40°C < Tj < 150°C, unless otherwise specified.

T able 4. Electrical characteristics

Symbol Parameter Test conditions Min Typ Max Unit
Off
V
CLAMP
V
CLTH
V
INTH
I
ISS
V
INCL
I
DSS
On
Drain-source clamp voltage VIN=0V; ID= 1.5 A 40 45 55 V
Drain-source clamp threshold voltage
VIN=0V; ID=2mA 36 V
Input threshold voltage VDS=VIN; ID=1mA 0.5 2.5 V
Supply current from input pin VDS=0V; VIN= 5 V 100 150 µA
I
=1mA 6 6.8 8 V
Input-source clamp voltage
Zero input voltage drain current (V
IN
=0V)
IN
I
= -1 mA -1.0 -0.3 V
IN
V
=13V; VIN=0V; Tj=25°C 30 µA
DS
V
=25V; VIN= 0 V 75 µA
DS
°C/W
R
DS(on)
Dynamic (T
(1)
g
fs
C
OSS
Switching
t
d(on)
t
r
t
d(off)
t
f
=5V; ID= 1.5 A; Tj= 25°C 120 mΩ
V
Static drain-source on resistance
=25 °C, unless otherwise specified)
j
IN
V
=5V; ID= 1.5 A 240 mΩ
IN
Forward transconductance VDD=13V; ID= 1.5 A 5.0 S
Output capacitance VDS=13V; f=1MHz; VIN=0V 150 pF
(T
= 25°C, unless otherwise specified)
j
Tur n - o n de l ay ti m e
Rise time 250 750 ns
Turn-off delay time 450 1350 ns
V
=15V; ID= 1.5 A; V
DD
R
gen=RIN MIN
=5V;
gen
=220Ω (see Figure 4)
90 300 ns
Fall time 250 750 ns
Doc ID 15626 Rev. 4 7/22
Electrical specifications VNN3NV04P-E, VNS3NV04P-E
T able 4. Electrical characteristics (continued)
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
t
d(off)
t
(dI/dt)
Q
Source drain diode (T
V
SD
t
Q
I
RRM
Tur n - o n de l ay ti m e
Rise time 2.5 7.5 µs
r
Turn-off delay time 3.3 10.0 µs
Fall time 2.0 6.0 µs
f
Turn-on current slope
on
Total input charge
i
=25°C, unless otherwise specified)
j
(1)
Forward on voltage ISD= 1.5 A; VIN=0V 0.8 V
Reverse recovery time
rr
Reverse recovery charge 37 µC
rr
Reverse recovery current 0.7 A
=15V; ID= 1.5 A; V
V
DD
R
=2.2KΩ (see Figure 4)
gen
VDD=15V; ID= 1.5 A; V R
gen=RIN MIN
=12V; ID= 1.5 A; VIN=5V;
V
DD
=2.13mA (seeFigure 7)
I
gen
= 1.5 A; dI/dt = 12 A/µs;
I
SD
= 30 V; L = 200 µH
V
DD
=220Ω
(see Figure 5)
gen
gen
=5V;
=5V;
0.45 1.35 µs
4.7 A/µs
8.5 nC
107 ns
Protections (-40°C < Tj < 150°C, unless otherwise specified)
I
lim
t
dlim
T
jsh
T
I
Eas
Drain current limit VIN=5V; VDS=13V 3.5 5 7 A
Step response current limit VIN=5V; VDS=13V 10 µs
Over temperature shutdown 150 175 200 °C
Over temperature reset 135 °C
jrs
Fault sink current VIN=5V; VDS=13V; Tj=T
gf
=25°C; VDD=24V;
j
=5V; R
gen=RIN MIN
Single pulse avalanche energy
starting T V
IN
L = 24 mH (see Figure 6 and
jsh
=220Ω;
10 15 20 mA
100 mJ
Figure 8)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
8/22 Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-E Protection features

3 Protection features

During normal operation, the input pin is electrically connected to the gate of the internal Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current I
(typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
ISS
The device integrates:
Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
Linear current limiter circuit: limits the drain current I
voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold T
Overtemperature and short circuit protection: these are based on sensing the chip
jsh
.
temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150°C to 190°C, a typical value being 170°C. The device is automatically restarted when the chip temperature falls of about 15°C below shutdown temperature.
Status feedback: in the case of an overtemperature fault condition (T
tries to sink a diagnostic current I
through the input pin in order to indicate fault
gf
condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the input pin driver is not able to supply the current I This will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current I
ISS
.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL logic circuit.
to I
D
whatever the input pin
lim
> T
j
jsh
, the input pin will fall to 0 V.
gf
), the device
Doc ID 15626 Rev. 4 9/22
Protection features VNN3NV04P-E, VNS3NV04P-E
R
gen
V
gen
V
D
t
I
D
90%
10%
t
V
gen
t
d(on)
t
d(off)
t
f
t
r
L=100uH
A
B
8.5
Ω
V
DD
R
gen
FAST DIODE
OMNIFET
A
D
I
S
220
Ω
B
OMNIFET
D
S
I
V
gen

Figure 4. Switching time test circuit for resistive load

Figure 5. Test circuit for diode recovery times

10/22 Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-E Protection features
GEN
ND8003
VIN
Figure 6. Unclamped inductive load test

Figure 7. Input charge test circuit

circuits

Figure 8. Unclamped inductive waveforms

Doc ID 15626 Rev. 4 11/22
Protection features VNN3NV04P-E, VNS3NV04P-E
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Id (A)
0
1
2
3
4
5
6
7
8
9
10
11
Gfs (S)
Vds=13V
Tj=25ºC Tj=150ºC
Tj=-40ºC
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)
0
25
50
75
100
125
150
175
200
225
250
275
300
Rds(on) (mohms)
Id=3.5A Id=1A
Id=3.5A Id=1A
Id=3.5A Id=1A
Tj=25ºC
Tj=150ºC
Tj=-40ºC
33.544.555.5 6 6.5
Vin(V)
0
25
50
75
100
125
150
175
200
225
250
Rds(on) (mohms)
Id=1.5A
Tj=150ºC
Tj=-40ºC
Tj=25ºC
0123456789101112
Id (A)
600
650
700
750
800
850
900
950
1000
1050
1100
Vsd (mV)
Vin=0V

3.1 Electrical characteristics curves

Figure 9. Thermal impedance for SOT-223 Figure 10. Derating curve

Figure 11. Transconductance Figure 12. Static drain-source on resistance

vs input voltage (part 1/2)
Figure 13. Static drain-source on resistance
vs input voltage (part 2/2)
12/22 Doc ID 15626 Rev. 4
Figure 14. Source-drain diode forward
characteristics
VNN3NV04P-E, VNS3NV04P-E Protection features
0 0.05 0.1 0.15 0.2 0.25 0.3
Id(A)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Rds(on) (ohms)
Tj=25ºC
Tj=150ºC
Tj=-40ºC
Vin=2.5V
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
di/dt(A/us)
Vin=5V
Vdd=15V
Id=1.5A
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
di/dt(A/ usec)
Vin=3.5V Vdd=15V
Id=1.5A
1.5
1.7522.25
2.5
2.7533.25
3.5
3.7544.25
4.5
4.75
5
Vin(V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Idon(A)
Vds=13.5V
Tj=150ºC
Tj=25ºC
Tj=-40ºC
0 0.5 1 1.5 2 2.5 3 3.5 4
Id (A)
0
25
50
75
100
125
150
175
200
225
250
Rds(on) (mohms)
Tj=25ºC
Tj=150ºC
Tj= - 40ºC
Vin=5V
0123456
Qg (nC)
0
1
2
3
4
5
6
Vin (V)
Vds=12V
Id=0.5A

Figure 15. Static drain source on resistance Figure 16. Turn-on current slope (part 1/2)

Figure 17. Turn-on current slope (part 2/2) Figure 18. Transfer characteristics

Figure 19. Static drain-source on resistance
vs Id

Figure 20. Input voltage vs input charge

Doc ID 15626 Rev. 4 13/22
Protection features VNN3NV04P-E, VNS3NV04P-E
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
0
25
50
75
100
125
150
175
200
225
250
275
300
dv/dt(V/usec)
Vin=5V
Vdd=15V
Id=1.5A
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
0
25
50
75
100
125
150
175
200
225
250
275
300
dv/dt(V/usec)
Vin=3.5V Vdd=15V
Id=1.5A
0 5 10 15 20 25 30 35
Vds(V)
50
100
150
200
250
300
350
C(pF)
f=1MHz Vin=0V
012345678910
Vds (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Id (A)
Vin=4V
Vin=5V
Vin=3V
-50 -25 0 25 50 75 100 125 150 175
Tc )ºC)
0.5
1
1.5
2
2.5
3
3.5
4
Rds(on) (mOhm)
Vin=5V Id=1.5A
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
0
0.5
1
1.5
2
2.5
3
3.5
4
t(usec)
Vdd=15V
Id=1.5A
Vin=5V
td(off)
tr
td(on)
tf
Figure 21. Turn-off drain source voltage slope
(part 1/2)
Figure 22. Turn-off drain source voltage slope
(part 2/2)

Figure 23. Capacitance variations Figure 24. Output characteristics

Figure 25. Normalized on resistance vs
temperature
v
14/22 Doc ID 15626 Rev. 4
Figure 26. Switching time resistive load
(part 1/2)
VNN3NV04P-E, VNS3NV04P-E Protection features
3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Vin(V)
0
100
200
300
400
500
600
700
800
900
t(nsec)
Vdd=15V
Id=1.5A
Rg=220ohm
tf
tr
td(off)
td(on)
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Vinth (V)
Vds=Vin
Id=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc ( ºC )
0
1
2
3
4
5
6
7
8
9
10
Ilim (A)
Vin=5V
Vds=13V
5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)
7.5
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
Tdlim(usec)
Vin=5V
Rg=220ohm
Figure 27. Switching time resistive load
(part 2/2)
Figure 29. Normalized current limit vs junction
temperature
Figure 28. Normalized input threshold voltage
vs temperature

Figure 30. Step response current limit

Doc ID 15626 Rev. 4 15/22
Package and packing information VNN3NV04P-E, VNS3NV04P-E
0046067

4 Package and packing information

In order to meet environmental requirements, ST offers these devices in different grades of
®
ECOPACK
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.

4.1 SOT-223 mechanical data

T able 5. SOT-223 mechanical data

Symbol
Min. Typ. Max.
A 1.8
B0.60.70.85
B1 2.9 3 3.15
c 0.24 0.26 0.35
D 6.3 6.5 6.7
e2.3
e1 4.6
E 3.3 3.5 3.7
.
Millimeters
H6.777.3
V 10 (max)
A1 0.02 0.1

Figure 31. SOT-223 package dimensions

16/22 Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-E Package and packing information

4.2 SO-8 mechanical data

T able 6. SO-8 mechanical data

Millimeters
Symbol
Min Typ Max
A 1.75
a1 0.1 0.25
a2 1.65
a3 0.65 0.85
b0.35 0.48
A 1.75
A1 0.10 0.25
A2 1.25
b 0.28 0.48
c 0.17 0.23
(1)
D
4.80 4.90 5.00
E 5.80 6.00 6.20
(2)
E1
3.80 3.90 4.00
e 1.27
h 0.25 0.50
L 0.40 1.27
L1 1.04
k 0°
ccc 0.10
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25 mm per side.
Doc ID 15626 Rev. 4 17/22
Package and packing information VNN3NV04P-E, VNS3NV04P-E
0016023 D

Figure 32. SO-8 package dimensions

18/22 Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-E Package and packing information
REEL DIMENSIONS
Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 12.4 N (min) 60 T (max) 18.4
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986
All dimensions are in mm.
Tape width W 12 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo components Components
500mm min
500mm min
Empty components pockets saled with cover tape.
User direction of feed

4.3 SOT-223 packing information

Figure 33. SOT-223 tape and reel shipment (suffix “TR”)

Doc ID 15626 Rev. 4 19/22
Package and packing information VNN3NV04P-E, VNS3NV04P-E
All dimensions are in mm.
Base Q.ty 100 Bulk Q.ty 2000 Tube length (± 0.5) 532 A 3.2 B 6 C (± 0.1) 0.6
C
B
A
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986
All dimensions are in mm.
Tape width W 12 Tape Hole Spacing P0 (± 0.1) 4 Component Sp acing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo components Components
500mm min
500mm min
Empty components pockets saled with cover tape.
User direction of feed
REEL DIMENSIONS
All dimensions are in mm.
Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 12.4 N (min) 60 T (max) 18.4

4.4 SO-8 packing information

Figure 34. SO-8 tube shipment (no suffix)

Figure 35. SO-8 tape and reel shipment (suffix “TR”)

20/22 Doc ID 15626 Rev. 4
VNN3NV04P-E, VNS3NV04P-E Revision history

5 Revision history

Table 7. Document revision history

Date Revision Changes
24-May-2009 1 Initial release.
21-Jul-2009 2 Updated Table 1: Device summary.
29-Sep_2009 3 Removed target specification on cover page.
Updated Table 1: Device summary
10-May-2012 4
Table 2: Absolute maximum ratings:
–R
: changed unit to Ω (it was W)
IN MIN
Doc ID 15626 Rev. 4 21/22
VNN3NV04P-E, VNS3NV04P-E
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22/22 Doc ID 15626 Rev. 4
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