The VNH5180A-E is a full bridge motor driver
intended for a wide range of automotive
applications. The device incorporates a dual
monolithic high-side driver and two low-side
switches. Both switches are designed using
STMicroelectronics’ well known and proven
Table 1.Device summary
Package
PowerSSO-36 TP
proprietary VIPower
to efficiently integrate on the same die a true
Power MOSFET with an intelligent
signal/protection circuitry. The three dies are
assembled in PowerSSO-36 TP package on
electrically isolated leadframes. This package,
specifically designed for the harsh automotive
environment offers improved thermal
performance thanks to exposed die pads.
Moreover, its fully symmetrical mechanical design
allows superior manufacturability at board level.
The input signals IN
interface to the microcontroller to select the motor
direction and the brake condition. The DIAG
or DIAG
/ENB, when connected to an external
B
pull-up resistor, enables one leg of the bridge.
Each DIAG
/ENA provides a feedback digital
A
diagnostic signal as well. The normal operating
condition is explained in the truth table. The CS
pin allows to monitor the motor current by
delivering a current proportional to its value when
CS_DIS pin is driven low or left open. When
CS_DIS is driven high, CS pin is in high
impedance condition. The PWM, up to 20 KHz,
allows to control the speed of the motor in all
possible conditions. In all cases, a low level state
on the PWM pin turns off both the LS
switches.
Allows the turn-on and the turn-off of the high-side and the
low-side switches according to the truth table.
UndervoltageShuts down the device for battery voltage lower than 5V.
High-side and low-side clamp voltage
High-side and low-side driver
Protect the high-side and the low-side switches from the
high voltage on the battery line.
Drive the gate of the concerned switch to allow a proper
R
for the leg of the bridge.
DS(on)
Current limitationLimits the motor current in case of short circuit.
"
"
High-side and low-side overtemperature
protection
Low-side overload detector
In case of short-circuit with the increase of the junction
temperature, it shuts down the concerned driver to prevent
degradation and to protect the die.
Detects when low side current exceeds shutdown current
and latches off the concerned Low side.
Signalizes the abnormal behaviour of the switch (output
Fault detection
Power limitation
shorted to ground or output shorted to battery) by pulling
down the concerned ENx/DIAGx pin.
Limits the power dissipation of the high-side driver inside
safe range in case of short to ground condition.
Doc ID 17074 Rev 55/31
Block diagram and pin descriptionVNH5180A-E
Figure 2.Configuration diagram (top view)
NC
DRAIN LS
GND_A
GND_A
NC
GND_A
GND_A
DRAIN LS
NC
SOURCE HS
SOURCE HS
SOURCE HS
V
NC
IN_A
EN/DIAG_A
IN_PWM
NC
CC
1
A
36
NC
DRAIN LS
B
GND_B
GND_B
Slug2
Slug3
NC
GND_B
GND_B
A
DRAIN LS
B
NC
A
A
A
Slug1
SOURCE HS
SOURCE HS
SOURCE HS
V
CC
NC
B
B
B
IN_B
EN/DIAG_B
CS_DIS
18
19
CS
Table 3.Suggested connections for unused and not connected pins
, Heat Slug1Drain of high-side switches and power supply voltage.
CC
NCNot connected.
XNot allowedX
Status of high-side and low-side switches A;
open drain output.
DIAGx/ENx
CS_DIS
Through 10 kΩ
resistor
6/31 Doc ID 17074 Rev 5
VNH5180A-EBlock diagram and pin description
Table 4.Pin definitions and functions (continued)
Pin N° SymbolFunction
20CS_DIS
21EN
22IN
25, 26, 27, 29, 35OUT
B/DIAGB
BCounter clockwise input.
B
Heat Slug3Source of high-side switch B / drain of low-side switch B.
,
Active high CMOS compatible pin to disable current sense
pin.
Status of high-side and low-side switches b;
open drain output.
30, 31, 33, 34GNDBSource of low-side switch B.
2, 8, 10, 11, 12OUTA, Heat Slug2Source of high-side switch A / drain of low-side switch A.
3, 4, 6, 7GND
Table 5.Pin functions description
ASource of low-side switch A.
NameDescription
V
CC
GNDPower ground.
OUT
OUT
IN
A
IN
B
Battery connection.
A
Power connections to the motor.
B
Voltage controlled input pins with hysteresis, CMOS compatible. These two pins
control the state of the bridge in normal operation according to the truth table (brake
to VCC, Brake to GND, clockwise and counterclockwise).
Voltage controlled input pin with hysteresis, CMOS compatible. Gates of low-side
PWM
FETS get modulated by the PWM signal during their ON phase allowing speed control
of the motor.
Open drain bidirectional logic pins.These pins must be connected to an external pull
/DIAG
EN
A
ENB/DIAG
up resistor. When externally pulled low, they disable half-bridge A or B. In case of fault
A
detection (thermal shutdown of a high-side FET or excessive ON-state voltage drop
B
across a low-side FET), these pins are pulled low by the device (see
table in fault conditions (detected on OUTA)
).
Table 14: Truth
Analog current sense output. This output delivers a current proportional to the motor
CS
current if CS_DIS is low or left open. The information can be read back as an analog
voltage across an external resistor.
CS_DISActive high CMOS compatible pin to disable the current sense pin.
Doc ID 17074 Rev 57/31
Electrical specificationsVNH5180A-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
I
I
I
INA
INB
ENA
I
ENB
IN
A
IN
B
DIAGA/EN
DIAGB/EN
PWM
I
pw
V
CC
OUT
A
OUT
B
A
B
CS
CS_DIS
I
CSD
V
SENSE
I
SENSE
I
OUTB
I
OUTA
V
OUTB
V
OUTA
GND
V
I
GND
CSD
CC
V
V
INA
INB
V
V
ENA
ENB
V
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 6.Absolute maximum ratings
SymbolParameterValueUnit
V
I
max
I
I
I
CS_DIS
V
V
T
I
GND
Supply voltage + 41V
CC
Maximum output current (continuous)Internally limitedA
Reverse output current (continuous)-15A
I
R
I
Input current (INA and INB pins)+/- 10mA
IN
Enable input current (DIAGA/ENA and DIAGB/ENB pins)+/- 10mA
EN
PWM Input current +/- 10mA
pw
CS_DIS input current+/- 10mA
Current sense maximum voltageVCC-41/+V
CS
Electrostatic discharge
ESD
(Human body model: R=1.5 kΩ, C=100 pF)
Junction operating temperature-40 to 150°C
T
c
Storage temperature-55 to 150 °C
STG
DC reverse ground pin current200mA
pw
Table 6: Absolute maximum ratings
CC
may
V
2kV
8/31 Doc ID 17074 Rev 5
VNH5180A-EElectrical specifications
2.2 Thermal data
Table 7.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case (per leg)
Thermal resistance junction-ambientSee
2.3 Electrical characteristics
Values specified in this section are for VCC = 9 V up to 18 V; -40 °C < TJ < 150 °C, unless
otherwise specified.
Table 8.Power section
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
R
ONHS
R
ONLS
Operating supply voltage5.518V
CC
I
Supply current
S
Static high-side resistance
Static low-side resistance
High-side free-wheeling
V
f
diode forward voltage
HSD4.8°C/W
LSD4.6
Figure 17
Off-state with all fault cleared and
ENx = 0 (standby)
IN
=INB=PWM=0; Tj = 25 °C;
A
=13V
V
CC
36µA
Off-state with all fault cleared and
ENx = 0 (standby)
IN
is the minimum threshold temperature between HS and LS
or
to GND)
to GND) I
CC
0.5V
= 2.5 A414652V
I
OUT
I
=2.5A414652V
OUT
= 2.1 V150175200°C
V
IN
=2.5A414652V
OUT
Table 12.Current sense (9 V < VCC<18V)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
=0.35A; V
K
K
K
K
dK
0/K0
dK
1/K1
dK
2/K2
dK
V
3/K3
SENSE
I
0
OUT/ISENSE
I
1
OUT/ISENSE
I
2
OUT/ISENSE
I
3
OUT/ISENSE
Analog sense
(1)
current drift
Analog sense
(1)
current drift
Analog sense
(1)
current drift
Analog sense
(1)
current drift
Max analog sense
output voltage
OUT
=0V; Tj= - 40 to 150 °C
V
CSD
I
=1A; V
OUT
V
CSD
I
= 2.5 A; V
OUT
V
CSD
I
=4A; V
OUT
= - 40 to 150 °C
T
j
I
= 0.35A; V
OUT
V
CSD
I
=1A; V
OUT
V
CSD
=2.5A; V
I
OUT
V
CSD
I
=4A; V
OUT
T
= - 40 to 150 °C
j
I
=2.5A; V
OUT
R
SENSE
SENSE
=0V; Tj= - 40 to 150 °C
SENSE
=0V; Tj= - 40 to 150 °C
SENSE
=0V; Tj= - 40 to 150 °C
SENSE
=0V; Tj= - 40 to 150 °C
SENSE
=0V; Tj= - 40 to 150 °C
SENSE
CSD
=2KΩ
SENSE
= 0.98 V;
SENSE
= 0.98 V;
=4V; V
=0V;
= 0.32 V;
=2.4V;
=4V; V
= 0.32V;
=2.4V;
CSD
CSD
=0V;
=0V;
645840 1140
700820955
710810900
690790900
-1818%
-1313%
-1313%
-1313%
5V
Doc ID 17074 Rev 511/31
Electrical specificationsVNH5180A-E
Table 12.Current sense (9 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
=0A; V
I
OUT
=0V; Tj= - 40 to 150 °C
V
IN
I
SENSE0
Analog sense
leakage current
Delay response time
t
DSENSEH
from falling edge of
CS_DIS pin
Delay response time
t
DSENSEL
from rising edge of
CS_DIS pin
1. Analog sense current drift is deviation of factor K for a given device over (-40 °C to 150 °C and
9V < VCC < 18 V) with respect to its value measured at TJ = 25 °C, VCC = 13 V.
V
=0V; VIN=5V;
CSD
= - 40 to.150 °C
T
j
=5V; VIN=5V; I
V
CSD
T
= - 40 to.150 °C
j
VIN=5V; V
=90% of I
I
SENSE
(see
Figure 8
=5V; V
V
IN
I
=10% of I
SENSE
(see
Figure 8
SENSE
SENSE
SENSE
)
)
=0V; V
OUT
<4V, I
OUT
SENSEmax
<4V; I
OUT
SENSEmax
=5V;
CSD
=2.5A;
=2.5A,
=2.5A;
05µA
0180µA
05µA
Figure 4.Definition of the delay times measurement
V
INA
V
INB
50µs
20µs
t
PWM
I
LOAD
t
DEL
12/31 Doc ID 17074 Rev 5
t
t
t
DEL
t
VNH5180A-EElectrical specifications
Figure 5.Definition of the low-side switching times
PWM
t
V
OUTA, B
90%
80%
t
f
20%
10%
t
r
t
Figure 6.Definition of the high-side switching times
V
INA
V
OUTA
t
D(on)
t
D(off)
90%
10%
t
t
Doc ID 17074 Rev 513/31
Electrical specificationsVNH5180A-E
Figure 7.Definition of dynamic cross conduction current during a PWM operation
INA= 1, INB=0
PWM
t
I
MOTOR
t
V
OUTB
t
I
CC
I
RM
t
t
rr
Figure 8.Definition of delay response time of sense current
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
t
DSENSEH
t
DSENSEL
14/31 Doc ID 17074 Rev 5
VNH5180A-EElectrical specifications
Table 13.Truth table in normal operating conditions
INAINBDIAGA/ENADIAGB/ENBOUTAOUT
1
1
H
B
HHigh Imp.Brake to V
0L
11
1
0
L
HCounterclockwise (CCW)
CSOperating mode
Clockwise (CW)
I
SENSE=IOUT
/K
CC
0LHigh Imp.Brake to GND
Table 14.Truth table in fault conditions (detected on OUTA)
IN
1
IN
A
1
B
DIAGA/EN
A
DIAGB/EN
B
OUT
A
OUT
CS (V
B
CSD
H
High Imp.
0L
1
1HI
0
0
OPEN
OUTB
0L
High Imp.
XX0OPEN
Fault InformationProtection Action
Note:In normal operating conditions the DIAGX/ENX pin is considered as an input pin by the
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
16/31 Doc ID 17074 Rev 5
VNH5180A-EElectrical specifications
2.4 Waveforms
Figure 9.Waveforms in full-bridge operation
NORMAL OPERATION (DIAGA/ENA=1, DIAGB/ENB=1)
DIAGA/EN
DIAGB/EN
IN
A
IN
B
A
B
LOAD CONNECTED BETWEEN OUTA, OUT
PWM
OUT
A
OUT
I
B
OUTA->OUTB
CS (*)
t
CS_DIS
(*) CS BEHAVIOUR DURING PWM MODE DEPENDS ON PWM FREQUENCY AND DUTY CYCLE
DEL
NORMAL OPERATION (DIAGA/ENA=1, DIAGB/ENB=0 and DIAGA/ENA=0, DIAGB/ENB=1)
LOAD CONNECTED BETWEEN OUTA, OUT
DIAGA/EN
DIAGB/EN
IN
IN
PWM
OUT
OUT
I
OUTA->OUTB
CS_DIS
A
B
A
B
A
B
CS
B
t
DEL
B
CURRENT LIMITATION/THERMAL SHUTDOWN or OUTA SHORTED TO GROUND
IN
A
IN
B
I
OUTA->OUTB
T
DIAGA/EN
DIAGB/EN
jHSA
I
LIM
Tj =T
TSD
Tj < T
TSD
A
B
Tj > T
TR
T
TSD_HSA
T
TR_HSA
CS
CS_DIS
limitation
normal operation
current
power limitation
shorted to ground
OUT
A
normal operation
Doc ID 17074 Rev 517/31
Electrical specificationsVNH5180A-E
Figure 10. Waveforms in full-bridge operation (continued)
OUTA shorted to VCC (resistive short) and undervoltage shutdown
CS_DIS
IN
A
IN
B
OUT
A
OUT
B
I
OUTA->OUTB
I
SD_LS
I
LSA
T
TSD_LS
T
j_LSA
DIAGB/EN
DIAGA/EN
CS
CS_DIS
IN
A
IN
B
OUT
A
OUT
B
I
OUTA->OUTB
I
LSA
T
j_LSA
DIAGB/EN
DIAGA/EN
CS
B
A
V<nominal
normal operation OUTA softly shorted to V
OUTA shorted to VCC (pure short) and undervoltage shutdown
I
SD_LS
T
TSD_LS
B
A
V<nominal
CC
normal operationunder voltage shutdown
normal operation OUTA hardly shorted to V
18/31 Doc ID 17074 Rev 5
CC
normal operationundervoltage shutdown
VNH5180A-EApplication information
3 Application information
In normal operating conditions the DIAGX/ENX pin is considered as an input pin by the
device. This pin must be externally pulled high.
PWM pin usage: In all cases, a “0” on the PWM pin turns off both LS
When PWM rises back to “1”, LS
or LSB turn on again depending on the input pin state.
A
and LSB switches.
A
Figure 11. Typical application circuit for DC to 20 kHz PWM operation short circuit
protection
V
CC
Reg 5V
μC
33nF
1K
DIAG
1K
1k
10K
3.3K
1K
1.5K
A
/EN
PWM
CS_DIS
CS
+ 5V
V
CC
A
IN
A
HS
AHS
OUT
A
LS
A
OUT
B
B
LS
M
GND
100K
S
G
b) N MOSFET
D
DIAGA/EN
B
+5V
A
GND
3.3K
DIAGB/EN
IN
B
1K
B
1K
Vcc
Note:The value of the blocking capacitor (C) depends on the application conditions and defines
voltage and current ripple on supply line at PWM operation. Stored energy of the motor
inductance may fly back into the blocking capacitor, if the bridge driver goes into 3-state.
This causes a hazardous overvoltage if the capacitor is not big enough. As basic orientation,
500 µF per 10 A load current is recommended.
In case of a fault condition the DIAGX/ENX pin is considered as an output pin by the device.
The fault conditions are:
–Overtemperature on one or both high-sides
–Short to battery condition on the output (overcurrent detection on the low-side
Power MOSFE T)
Possible origins of fault conditions may be:
OUT
is shorted to ground → overtemperature detection on high-side A
A
OUT
is shorted to VCC → low-side Power MOSFET overcurrent detection
A
When a fault condition is detected, the user can identify which power element is in fault by
monitoring the IN
, INB, DIAGA/ENA and DIAGB/ENB pins.
A
Doc ID 17074 Rev 519/31
Application informationVNH5180A-E
In any case, when a fault is detected, the faulty leg of the bridge is latched off. To turn on the
respective output (OUT
) again, the input signal must rise from low to high level.
X
Figure 12. Behavior in fault condition (how a fault can be cleared)
Note:In case of the fault condition is not removed, the procedure for unlatching and sending the
device in Stby mode is:
- Clear the fault in the device (toggle: IN
- Pull low all inputs, PWM and Diag/EN pins within t
if ENA= 0 or INB if ENB=0)
A
.
DEL
If the Diag/En pins are already low, PWM = 0, the fault can be cleared simply toggling the
input. The device enters in stby mode as soon as the fault is cleared.
3.1 Reverse battery protection
Three possible solutions can be considered:
–A Schottky diode D connected to V
–An N-channel MOSFET connected to the GND pin (see
application circuit for DC to 20 kHz PWM operation short circuit protection
–A P-channel MOSFET connected to the V
The device sustains no more than -15 A in reverse battery conditions because of the two
Body diodes of the Power MOSFETs. Additionally, in reverse battery condition the I/Os of
VNH5180A-E is pulled down to the V
line (approximately -1.5 V).
CC
CC
pin
CC
Figure 11: Typical
pin
)
20/31 Doc ID 17074 Rev 5
VNH5180A-EApplication information
Series resistor must be inserted to limit the current sunk from the microcontroller I/Os. If
I
is the maximum target reverse current through microcontroller I/Os, series resistor is:
Rmax
V
–
IOsVCC
---------------------------------=
R
I
Rmax
Figure 13. Half-bridge configuration
V
CC
/EN
DIAG
A
DIAGB/EN
PWM
OUT
IN
A
IN
B
A
B
B
IN
A
IN
B
DIAG
A
DIAGB/EN
PWM
OUT
A
/EN
A
B
GND
OUT
B
M
OUT
A
GND
Note:The VNH5180A-E can be used as a high power half-bridge driver achieving an On
resistance per leg of 90 m
Ω
.
Figure 14. Multi-motors configuration
V
CC
/EN
DIAG
A
DIAGB/EN
PWM
OUT
IN
A
IN
B
A
B
B
IN
A
IN
B
DIAG
A
DIAGB/EN
PWM
OUT
A
/EN
A
B
OUT
B
M
2
OUT
A
GND
M
1
Note:The VNH5180A-E can easily be designed in multi-motors driving applications such as seat
positioning systems where only one motor must be driven at a time. DIAG
GND
M
3
/ENX pins allow
X
to put unused half-bridges in high impedance.
Doc ID 17074 Rev 521/31
Package and PCB thermal dataVNH5180A-E
4 Package and PCB thermal data
4.1 PowerSSO-36 thermal data
Figure 15. PowerSSO-36™ PC board
Double layers: footprint
Double layers: 2cm
Double layers: 8cm
Note:
Board finish thickness 1.6 mm +/- 10 %, Board double layers, Board dimension 129 mm x 60 mm, Board Material FR4, Cu
thickness 0.070 mm (front and back side), Ther mal vias spaced on a 1.2 mm x 1.2 mm grid, Vias pad clearance thickness
0.2 mm, Thermal via diameter 0.3 mm +/- 0.08 mm, Cu thickness on vias 0.025 mm.
22/31 Doc ID 17074 Rev 5
2
of Cu
2
of Cu
VNH5180A-EPackage and PCB thermal data
Figure 16. Chipset configuration
CHIP 1
R
thA
Figure 17. Auto and mutual R
condition
80
70
60
50
40
°C/W
30
20
R
thAB
CHIP 2
R
thB
thj-amb
R
thAC
CHIP 3
R
thBC
R
thC
vs PCB copper area in open box free air
RthA
RthB = RthC
RthAB = RthAC
RthBC
10
0
0123456789
cm2 of Cu Area (re fer to PCB layout)
4.1.1 Thermal calculation in clockwise and anti-clockwise operation in
steady-state mode
Table 18.Thermal calculation in clockwise and anti-clockwise operation in steady-
state mode
HSAHSBLSALS
ON OFF OFF ON
OFF ONON OFF
B
P
x R
P
x R
dHSA
thHSLS
dHSB
thHSLS
x R
x R
T
jHSAB
thHS
+ T
thHS
+ T
+ P
amb
+ P
amb
dLSB
dLSA
P
dHSA
P
dLSB
P
dHSB
P
dLSA
x R
x R
x R
x R
T
jLSA
thHSLS
thLSLS
thHSLS
thLS
+ T
+
+ T
+
amb
amb
P
x R
P
x R
dHSA
dHSB
Doc ID 17074 Rev 523/31
x R
+ T
thLS
x R
thLSLS
T
jLSB
thHSLS
amb
thHSLS
+ T
amb
+ P
+ P
dLSB
dLSA
Package and PCB thermal dataVNH5180A-E
4.1.2 Thermal calculation in transient mode
T
= P
= P
= P
• Zhs + Z
dhs
• Zls + P
dlsA
• Zls + P
dlsB
hs
T
lsA
T
lsB
Figure 18. Detailed chipset configuration
hsls
dhs
dhs
• (P
• Z
• Z
dlsA
hsls
hsls
+ P
+ P
+ P
dlsB
dlsB
dlsA
) + T
• Z
• Z
amb
+ T
hsls
+ T
hsls
CHIP 1
Z
ts
amb
amb
Z
hsls
CHIP 2
Z
ls
Equation 1: pulse calculation formula
Z
THδRTH
δ Z
THtp
1 δ–()+⋅=
where
δtpT⁄=
Z
hsls
CHIP 3
Z
lsls
Z
ls
24/31 Doc ID 17074 Rev 5
VNH5180A-EPackage and PCB thermal data
Figure 19.PowerSSO-36 HSD thermal impedance junction ambient single pulse
100
HSD-8 cm^2 Cu
HSD-2 cm^2 Cu
HSD-footpr int
HsLsD-8 cm^2 Cu
HsLsD-2 cm^2 Cu
HsLsD-footprint
10
°C/W
1
0.1
0.0010.010.11101001000time (se c)
Figure 20. PowerSSO-36 LSD thermal impedance junction ambient single pulse
ZTH -HSD @ cu area
100
ZTH -LSD @ cu area
LSD-8 cm ^2 Cu
LSD-2 cm ^2 Cu
LSD-footpri nt
LsLsD-8 cm^2 Cu
LsLsD-2 cm^2 Cu
LsLsD-footprint
10
Z
ls
°C/W
1
0.1
0.0010.010.11101001000time (sec)
Z
lsls
Doc ID 17074 Rev 525/31
Package and PCB thermal dataVNH5180A-E
Figure 21. Thermal fitting model of an H-bridge in PowerSSO-36
Table 19.Thermal parameters
(1)
Area/island (cm2)Footprint28
R1 = R7 (°C/W)0.4
R2 = R8 (°C/W)3.5
R3 (°C/W)8
R4 (°C/W)301611
R5 (°C/W)403014
R6 (°C/W)363421
R9 = R15 (°C/W)0.1
R10 = R16 (°C/W)5.2
R11 = R17 (°C/W)321414
R12 = R18 (°C/W)492121
R13 = R19 (°C/W)523624
R14 = R20 (°C/W)504033
R21 = R22 = R23 (°C/W)807775
C1 = C7 = C9 = C15 (W.s/°C)0.0005
C2 = C8 (W.s/°C)0.008
C3 (W.s/°C)0.09
C4 (W.s/°C)0.50.80.8
C5 (W.s/°C)0.81.42
C6 (W.s/°C)7810
C10 = C16 (W.s/°C)0.009
C11 = C17 (W.s/°C)0.090.070.07
C12 = C18 (W.s/°C)0.450.450.45
C13 = C19 (W.s/°C)0.81.21.4
C14 = C20 (W.s/°C)458
C21 = C22 = C23 (W.s/°C)0.0050.0030.003
1. The blank space means that the value is the same as the previous one.
26/31 Doc ID 17074 Rev 5
VNH5180A-EPackage and packing information
5 Package and packing information
5.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
5.2 PowerSSO-36 TP package information
Figure 22. PowerSSO-36 TP package dimensions
.
Doc ID 17074 Rev 527/31
Package and packing informationVNH5180A-E
Table 20.PowerSSO-36 TP mechanical data
Millimeters
Symbol
Min.Typ.Max.
A2.15-2.47
A22.15-2.40
a10-0.1
b0.18-0.36
c0.23-0.32
D10.10-10.50
E7.4-7.6
e-0.5-
e3-8.5-
F2.3
G- -0.1
H10.1-10.5
h--0.4
k0 deg8 deg
L0.6 - 1
M4.3
N--10 deg
O1.2
Q0.8
S2.9
T3.65
U1.0
X11.852.35
Y133.5
X21.852.35
Y233.5
X34.7-5.2
Z10.4
Z20.4
Y33-3.5
28/31 Doc ID 17074 Rev 5
VNH5180A-EPackage and packing information
5.3 PowerSSO-36 TP packing information
Figure 23. PowerSSO-36 TP tube shipment (no suffix)
Base Qty49
C
B
A
Figure 24. PowerSSO-36 TP tape and reel shipment (suffix “TR”)
Bulk Qty1225
Tube length (±0.5)532
A3.5
B13.8
C (±0.1)0.6
All dimensions are in mm.
Reel dimensions
Base Qty1000
Bulk Qty1000
A (max)330
B (min)1.5
C (±0.2)13
F20.2
G (+2 / -0)24.4
N (min)100
T (max)30.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Table 18: Thermal calculation in clockwise and anti-clockwise
operation in steady-state mode
–
Table 19: Thermal parameters
20-Oct-20104
22-Dec-20115
Changed document status from target specification to definitive
datasheet
Updated
Added
Figure 1: Block diagram
Table 3: Suggested connections for unused and not
connected pins
Table 11: Protections and diagnostics
–T
, TTR, T
TSD
Updated
Figure 9: Waveforms in full-bridge operation
: added note
HYST
:
and
Figure 10: Waveforms in full-bridge operation (continued)
30/31 Doc ID 17074 Rev 5
VNH5180A-E
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