The VNH3SP30-E is a full-bridge motor driver
intended for a wide range of automotive
applications. The device incorporates a dual
monolithic high-side driver (HSD) and two lowside switches. The HSD switch is designed using
STMicroelectronics proprietary VIPower™ M0-3
technology that efficiently integrates a true Power
MOSFET with an intelligent signal/protection
circuit on the same die.
MultiPowerSO-30™
The low-side switches are vertical MOSFETs
manufactured using STMicroelectronics
proprietary EHD (“STripFET™”) process.The
three circuits are assembled in a MultiPowerSO30 package on electrically isolated lead frames.
This package, specifically designed for the harsh
automotive environment, offers improved thermal
performance thanks to exposed die pads.
Moreover, its fully symmetrical mechanical design
provides superior manufacturability at board level.
The input signals IN
and INB can directly
A
interface with the microcontroller to select the
motor direction and the brake condition. Pins
DIAG
/ENA or DIAGB/ENB, when connected to an
A
external pull-up resistor, enable one leg of the
bridge. They also provide a feedback digital
diagnostic signal. The normal condition operation
is explained in The speed of the motor can be
controlled in all possible conditions by the PWM
up to kHz. In all cases, a low level state on the
PWM pin will turn off both the LS
switches. When PWM rises to a high level, LS
LS
Allows the turn-on and the turn-off of the high side and the low side switches
according to the truth table
Shuts down the device outside the range [5.5V..36V] for the battery voltage
Protects the high side and the low side switches from the high voltage on the
battery line in all configurations for the motor
Drives the gate of the concerned switch to allow a proper R
the bridge
Limits the motor current by reducing the high side switch gate-source voltage
when short-circuit to ground occurs
In case of short-circuit with the increase of the junction’s temperature, shuts
down the concerned high side to prevent its degradation and to protect the die
Signals an abnormal behavior of the switches in the half-bridge A or B by
pulling low the concerned EN
/DIAGx pin
x
DS(on)
for the leg of
5/33
Block diagram and pins descriptionVNH3SP30-E
Figure 2.Configuration diagram (top view)
Table 3.Pin definitions and functions
Pin NoSymbolFunction
1, 25, 30OUT
, Heat Slug3 Source of high side switch A / Drain of low side switch A
A
2, 4, 7, 9, 12,
14, 17, 22, 24, 29NCNot connected
3, 13, 23VCC, Heat Slug1Drain of high side switches and power supply voltage
6EN
5IN
A
A
/DIAG
A
Status of high side and low side switches A; open drain output
Clockwise input
8PWMPWM input
11IN
10EN
15, 16, 21OUT
26, 27, 28GND
18, 19, 20GND
1. GNDA and GNDB must be externally connected together.
B
/DIAG
B
B
, Heat Slug2 Source of high side switch B / Drain of low side switch B
B
A
B
Counter clockwise input
Status of high side and low side switches B; open drain output
Source of low side switch A
Source of low side switch B
(1)
(1)
6/33
VNH3SP30-EBlock diagram and pins description
Table 4.Pin functions description
NameDescription
V
CC
, GNDBPower grounds; must always be externally connected together
GND
A
OUTBPower connections to the motor
OUT
A,
Battery connection
Voltage controlled input pins with hysteresis, CMOS compatible. These two pins
IN
A, INB
control the state of the bridge in normal operation according to the truth table (brake
to VCC, brake to GND, clockwise and counterclockwise).
Voltage controlled input pin with hysteresis, CMOS compatible. Gates of low side
PWM
FETs are modulated by the PWM signal during their ON phase allowing speed
control of the motor.
Open drain bidirectional logic pins. These pins must be connected to an external pull
ENA/DIAGA,
ENB/DIAG
up resistor. When externally pulled low, they disable half-bridge A or B. In case of
fault detection (thermal shutdown of a high side FET or excessive ON state voltage
B
drop across a low side FET), these pins are pulled low by the device (see truth table
in fault condition).
7/33
Electrical specificationsVNH3SP30-E
2 Electrical specifications
Figure 3.Current and voltage conventions
2.1 Absolute maximum ratings
Table 5.Absolute maximum ratings
SymbolParameterValueUnit
V
cc
I
max1
I
R
I
IN
EN
I
pw
V
ESD
T
j
c
T
STG
Supply voltage-0.3...40V
Maximum output current (continuous)30
Reverse output current (continuous)-30
Input current (INA and INB pins)±10
Enable input current (DIAGA/ENA and DIAGB/ENB pins)±10
PWM input current ±10
Electrostatic discharge (R = 1.5kΩ, C = 100pF)
– logic pins
– output pins: OUT
, OUTB, V
A
CC
Junction operating temperatureInternally limited
Case operating temperature-40 to 150
Storage temperature-55 to 150
A
mAI
4
5
kV
kV
°CT
8/33
VNH3SP30-EElectrical specifications
2.2 Electrical characteristics
Vcc = 9V up to 18V; -40°C < Tj< 150°C, unless otherwise specified.
Table 6.Power section
SymbolParameterTest ConditionsMin Typ Max Unit
V
Operating supply
CC
voltage
5.536V
Off state:
203040µA
I
S
Supply current
=INB=PWM=0; Tj= 25°C; VCC=13V
IN
A
=INB=PWM=0
IN
A
On state:
or INB=5V, no PWM15mA
IN
A
R
ONHS
R
ONLS
Static high side
resistance
Static low side
resistance
= 12A; Tj= 25°C
I
OUT
= 12A; Tj= -40 to 150°C
I
OUT
= 12A; Tj= 25°C
I
OUT
= 12A; Tj= -40 to 150°C
I
OUT
2330
60
mΩ
1115
30
High side free-
V
wheeling diode
f
= 12 A0.81.1V
I
f
forward voltage
I
L(off)
High side off state
output current
(per channel)
Tj=25°C; V
= 125°C; V
T
j
=ENX=0V; VCC=13V
OUTX
=ENX=0V; VCC=13V
OUTX
3
5
Table 7.Logic inputs (INA, INB, ENA, ENB)
SymbolParameterTest conditionsMin Typ Max Unit
V
IL
V
IH
V
IHYST
V
ICL
I
INL
I
INH
V
DIAG
Input low level voltage
Input high level voltage3.25
Normal operation (DIAG
as an input pin)
/ENX pin acts
X
1.5
Input hysteresis voltage0.5
IIN=1mA66.88
Input clamp voltage
= -1mA-1-0.7 -0.3
I
IN
Input low currentVIN=1.5V1
Input high currentVIN=3.25V10
Enable output low level
voltage
Fault operation (DIAGX/ENX pin acts as
an output pin); IEN=1mA
0.4V
µA
µA
V
µA
9/33
Electrical specificationsVNH3SP30-E
Table 8.PWM
SymbolParameterTest ConditionsMinTypMaxUnit
V
pwl
I
pwl
V
pwh
I
pwh
V
pwhhyst
V
pwcl
V
pwtest
I
pwtest
Table 9.Switching (VCC=13V, R
PWM low level voltage1.5V
PWM low level pin
current
V
=1.5V1µA
pw
PWM high level voltage3.25V
PWM high level pin
current
V
= 3.25V10µA
pw
PWM hysteresis voltage0.5
I
= 1mAVCC+0.3 VCC+0.7VCC+1
PWM clamp voltage
Test mode PWM pin
voltage
Test mode PWM pin
current
pw
= -1mA-5-3.5-2
I
pw
-3.5-2-0.5V
= -2 V-2000-500µA
V
IN
=1.1Ω, unless otherwise specified)
LOAD
SymbolParameterTest ConditionsMinTypMaxUnit
fPWM frequency010kHz
t
d(on)
t
d(off)
t
r
t
f
t
DEL
Table 10.Protection and diagnostic
Turn-on delay time
Turn-off delay time
Rise time(see Figure 5)1.53
Fall time(see Figure 5)25
Delay time during change
of operating mode
Input rise time < 1µs
(see Figure 6)
Input rise time < 1µs
(see Figure 6)
100300
85255
(see Figure 4)6001800
V
µs
SymbolParameterTest ConditionsMinTypMaxUnit
V
V
I
T
T
LIM
USD
OV
TSD
TR
HYST
Undervoltage shut-down5.5
Overvoltage shut-down3643
Current limitation3045A
Thermal shut-down temperatureV
Thermal reset temperature135
Thermal hysteresis715
10/33
= 3.25V150170200
IN
V
°CT
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