ST VND830ASP User Manual

®	VND830ASP

DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

TYPE	RDS(on)	IOUT	VCC
VND830ASP	60 mΩ (*)	6 A (*)	36 V (*)

(*) Per channel

■DC SHORT CIRCUIT CURRENT: 6A

■CMOS COMPATIBLE INPUTS

■PROPORTIONAL LOAD CURRENT SENSE

■UNDERVOLTAGE AND OVERVOLTAGE SHUT-DOWN

■OVERVOLTAGE CLAMP

■THERMAL SHUT-DOWN

■CURRENT LIMITATION

■VERY LOW STAND-BY POWER DISSIPATION

■PROTECTION AGAINST:

LOSS OF GROUND AND LOSS OF VCC ■ REVERSE BATTERY PROTECTION (**)

DESCRIPTION

The VND830ASP is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving any kind of load with one

BLOCK DIAGRAM

10

	1
	PowerSO-10™
	ORDER CODES
PACKAGE		TUBE		T&R
PowerSO-10™		VND830ASP	VND830ASP13TR

side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device has two channels in high side configuration; each channel has an analog sense output on which the sensing current is proportional (according to a known ratio) to the corresponding load current. Built-in thermal shut-down and outputs current limitation protect the chip from over temperature and short circuit. Device turns off in case of ground pin disconnection.

VCC

	OVERVOLTAGE
VCC CLAMP	UNDERVOLTAGE
	PwCLAMP 1
	DRIVER 1
INPUT 1		ILIM1
LOGIC	IOUT1	Vdslim1	Ot1
INPUT 2		K
	PwCLAMP 2
GND	DRIVER 2
Ot1		ILIM2
OVERTEMP. 1		Vdslim2
Ot2	IOUT2		Ot2
		K
OVERTEMP. 2

OUTPUT 1

CURRENT SENSE 1

OUTPUT 2

CURRENT SENSE 2

(**) See application schematic at page 8

November 2003

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VND830ASP

ABSOLUTE MAXIMUM RATING

	Symbol	Parameter	Value	Unit
	VCC	DC Supply Voltage	41	V
	-VCC	Reverse Supply Voltage	- 0.3	V
	-IGND	DC Reverse Ground Pin Current	- 200	mA
	IOUT	Output Current	Internally Limited	A
	IR	Reverse Output Current	- 6	A
	IIN	Input Current	+/- 10	mA
	VCSENSE	Current Sense Maximum Voltage	-3	V
			+15	V
		Electrostatic Discharge (Human Body Model: R=1.5Ω; C=100pF)
		- INPUT	4000	V
	VESD	- CURRENT SENSE	2000	V
		- OUTPUT	5000	V
		- VCC	5000	V
	EMAX	Maximum Switching Energy	100	mJ
		(L=1.8mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=9A)
	Ptot	Power Dissipation at TC=25°C	74	W
	Tj	Junction Operating Temperature	Internally Limited	°C
	Tc	Case Operating Temperature	- 40 to 150	°C
	Tstg	Storage Temperature	- 55 to 150	°C

CONNECTION DIAGRAM (TOP VIEW)

GROUND	6	5
INPUT2	7	4
INPUT1	8	3
C.SENSE1	9	2
C.SENSE2	10	1
		11

VCC

OUTPUT 2 OUTPUT 2 N.C.

OUTPUT 1 OUTPUT 1

CURRENT AND VOLTAGE CONVENTIONS

IS

VCC

VCC

IIN1

OUTPUT1

IOUT1

INPUT1

VOUT1

V

ISENSE1

IN1

CURRENT SENSE 1

VSENSE1

IIN2

OUTPUT2

IOUT2

VOUT2

VIN2

INPUT2

CURRENT SENSE 2

ISENSE2

VSENSE2

GROUND

IGND

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			VND830ASP
THERMAL DATA
Symbol	Parameter	Value		Unit
Rthj-case	Thermal Resistance Junction-case	1.2		°C/W
Rthj-amb	Thermal Resistance Junction-ambient	51.2 (*)		°C/W

(*)When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35μm thick). Horizontal mounting and no artificial air flow

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified) (Per each channel)

POWER OUTPUT

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VCC	Operating Supply Voltage		5.5	13	36	V
VUSD	Undervoltage Shut-down		3	4	5.5	V
VOV	Overvoltage Shut-down		36			V
RON	On State Resistance	IOUT =2A; Tj=25°C			60	mΩ
		IOUT =2A; Tj=150°C			120	mΩ
Vclamp	Clamp voltage	ICC=20 mA (see note 1)	41	48	55	V
		Off State; VCC=13V; VIN=VOUT=0V		12	40	μA
		Off State; VCC=13V; VIN=VOUT=0V;
IS	Supply Current	Tj =25°C		12	25	μA
		On State; VIN=5V; VCC=13V; IOUT=0A;
		RSENSE=3.9KΩ			7	mA
IL(off1)	Off State Output Current	VIN=VOUT=0V; VCC=36V; Tj=125°C	0		50	μA
IL(off2)	Off State Output Current	VIN=0V; VOUT=3.5V	-75		0	μA
IL(off3)	Off State Output Current	VIN=VOUT=0V; VCC=13V; Tj =125°C			5	μA
IL(off4)	Off State Output Current	VIN=VOUT=0V; VCC=13V; Tj =25°C			3	μA

SWITCHING (VCC =13V)

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
td(on)	Turn-on Delay Time	RL=6.5Ω from VIN rising edge to		30		μs
		VOUT=1.3V
td(off)	Turn-off Delay Time	RL=6.5Ω from VIN falling edge to		30		μs
		VOUT=11.7V
		RL=6.5Ω from VOUT=1.3V to VOUT=10.4V		See		V/μs
dVOUT/dt(on)	Turn-on Voltage Slope			relative
				diagram
		RL=6.5Ω from VOUT=11.7V to VOUT=1.3V		See		V/μs
dVOUT/dt(off)	Turn-off Voltage Slope			relative
				diagram

LOGIC INPUT (Channels 1,2)

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VIL	Input low level voltage				1.25	V
IIL	Low level input current	VIN=1.25V	1			μA
VIH	Input high level voltage		3.25			V
IIH	High level input current	VIN=3.25V			10	μA
VI(hyst)	Input hysteresis voltage		0.5			V
VICL	Input clamp voltage	IIN=1mA	6	6.8	8	V
		IIN=-1mA		-0.7		V

Note 1: Vclamp and VOV are correlated. Typical difference is 5V.

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VND830ASP

ELECTRICAL CHARACTERISTICS (continued)

VCC - OUTPUT DIODE

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VF	Forward on Voltage	-IOUT=2A; Tj=150°C			0.6	V

PROTECTIONS

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Ilim	Current limitation	Vcc=13V	6	9	15	A
		5.5V<Vcc<36V			15	A
TTSD	Thermal shut-down		150	175	200	°C
	temperature
TR	Thermal reset temperature		135			°C
THYST	Thermal hysteresis		7	15		°C
Vdemag	Turn-off output voltage clamp	IOUT=2A; VIN=0V; L=6mH	VCC-41	VCC-48	VCC-55	V
VON	Output voltage drop limitation	IOUT=10mA		50		mV
CURRENT SENSE (9V≤VCC≤16V) (See figure 1)

Symbol			Parameter	Test Conditions	Min	Typ	Max	Unit
K0		IOUT/ISENSE		IOUT1 or IOUT2=0.05A; VSENSE=0.5V;	600	1300	2000
				other channels open; Tj= -40°C...150°C
K1		IOUT/ISENSE		IOUT1 or IOUT2=0.25A; VSENSE=0.5V;	1000	1400	1900
				other channels open; Tj= -40°C...150°C
dK1/K1		Current Sense Ratio Drift		IOUT1 or IOUT2=0.25A; VSENSE=0.5V;	-10		+10	%
				other channels open; Tj= -40°C...150°C
				IOUT1 or IOUT2=1.6A; VSENSE=4V; other	1280	1500	1800
K	2	I	/I	channels open; Tj=-40°C
			OUT SENSE
				Tj=25°C...150°C	1300	1500	1780
dK2/K2		Current Sense Ratio Drift		IOUT1 or IOUT2=1.6A; VSENSE=4V; other	-6		+6	%
				channels open; Tj=-40°C...150°C
				IOUT1 or IOUT2=2.5A; VSENSE=4V; other	1280	1500	1680
K	3	I	/I	channels open; Tj=-40°C
			OUT SENSE
				Tj=25°C...150°C	1340	1500	1600
dK3/K3		Current Sense Ratio Drift		IOUT1 or IOUT2=2.5A; VSENSE=4V; other	-6		+6	%
				channels open; Tj=-40°C...150°C
				VIN=0V; IOUT=0A; VSENSE=0V;	0		5	μA
		Analog Sense Leakage Cur-		Tj=-40°C...150°C
ISENSE
		rent		VIN=5V; IOUT=0A; VSENSE=0V;
					0		10	μA
				Tj=-40°C...150°C
VSENSE		Max Analog Sense Output		VCC=5.5V; IOUT1,2=1.3A; RSENSE=10kΩ	2			V
		Voltage		VCC>8V, IOUT1,2=2.5A; RSENSE=10kΩ	4			V
VSENSEH		Sense Voltage in		VCC=13V; RSENSE=3.9kΩ		5.5		V
		Overtemperature conditions
		Analog Sense Output						Ω
RVSENSEH		Impedance in		VCC=13V; Tj>TTSD; All Channels Open		400
		Overtemperature Condition
tDSENSE		Current sense delay		to 90% ISENSE (see note 2)			500	μs
		response

Note 2: current sense signal delay after positive input slope.

Note: Sense pin doesn’t have to be left floating.

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VND830ASP

TRUTH TABLE (per channel)

CONDITIONS

INPUT

OUTPUT

SENSE

Normal operation

L

L

0

H

H

Nominal

Overtemperature

L

L

0

H

L

VSENSEH

Undervoltage

L

L

0

H

L

0

Overvoltage

L

L

0

H

L

0

L

L

0

Short circuit to GND

H

L

(Tj<TTSD) 0

H

L

(Tj>TTSD) VSENSEH

Short circuit to VCC

L

H

0

H

H

< Nominal

Negative output voltage

L

L

0

clamp

ELECTRICAL TRANSIENT REQUIREMENTS

ISO T/R 7637/1

TEST LEVELS

I

II

III

IV

Delays and

Test Pulse

Impedance

1

-25 V

-50 V

-75 V

-100 V

2 ms 10 Ω

2

+25 V

+50 V

+75 V

+100 V

0.2 ms 10 Ω

3a

-25 V

-50 V

-100 V

-150 V

0.1 μs 50 Ω

3b

+25 V

+50 V

+75 V

+100 V

0.1 μs 50 Ω

4

-4 V

-5 V

-6 V

-7 V

100 ms, 0.01 Ω

5

+26.5 V

+46.5 V

+66.5 V

+86.5 V

400 ms, 2 Ω

ISO T/R 7637/1

TEST LEVELS RESULTS

Test Pulse

I

II

III

IV

1

C

C

C

C

2

C

C

C

C

3a

C

C

C

C

3b

C

C

C

C

4

C

C

C

C

5

C

E

E

E

CLASS

CONTENTS

C

All functions of the device are performed as designed after exposure to disturbance.

E

One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.

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VND830ASP

Figure 1: IOUT/ISENSE versus IOUT

Iout/Isense
2250
2000
1750					m ax Tj= -40ºC
		m ax Tj=25...150ºC
1500					typical value
		m in Tj=25...150ºC
1250				m in Tj= -40ºC
1000
750
500
0	0.5	1	1.5	2	2.5	3

Iout (A)

Figure 2: Switching Characteristics (Resistive load RL=6.5Ω)

VOUT

80%

90%

dVOUT/dt(off)

dV

/dt

OUT

(on)

tr

10%

tf

t

ISENSE

90%

t

INPUT tDSENSE

td(on)			t
				d(off)

t

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