ST VND830ASP User Manual

®

VND830ASP

DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

TYPE R

DS(on)

I

OUT

V

CC

VND830ASP 60 mΩ (*) 6 A (*) 36 V (*)

(*) Per channel

■ DC SHORT CIRCUIT CURRENT: 6A

■ CMOS COMPATIBLE INPUTS

■ PROPORTIONAL LOAD CURRENT SENSE

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUT-DOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT-DOWN

■ CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTI ON AGAINST:

LOSS OF GROUND AND LOSS OF V

■ REVERSE BATTERY PROTECTION (**)

CC

DESCRIPTION

The VND830ASP is a monolithic device made using STMicroelect ronics VIPower M0-3 technology. It is intende d for driving any kind o f load with one

BLO C K DIAG RA M

10

1

PowerSO-10

™

ORDER CODES

PACKAGE TUBE T&R

VND830ASP VND830ASP13TR

PowerSO-10

™

side connected to ground. A cti ve VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device has two channels in high side configuration; each channel has an ana log sense output on which the sensing current is proportional (according to a known rati o ) to the corr esponding load current. Built-in thermal shut-down and outputs current limitation protect the chip from over temperature and short circuit. Device turns off in case of ground pin disconnection.

V

CC

OVERVOLTAGE

V

CLAMP

CC

INPUT 1

INPUT 2

GND

OVERTEMP. 1

OVERTEMP. 2

(**) See application schematic at page 8

LOGIC

Ot1

Ot2

UNDERVOLTAGE

DRIVER 1

I

OUT1

DRIVER 2

I

OUT2

PwCLAMP 1

I

LIM1

V

dslim1

K

PwCLAMP 2

I

LIM2

V

dslim2

K

OUTPUT 1

Ot1

CURRENT SENSE 1

OUTPUT 2

Ot2

CURRENT SENSE 2

November 2003 1/17

VND830ASP

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter Value Unit

V

-V

-I

GND

I

OUT

I

V

CSENSE

V

E

MAX

P

T

CC

I

R

IN

ESD

tot

T T

stg

DC Supply Voltag e 41 V Reverse Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA Output Current Internally Limited A Reverse Output Current - 6 A Inpu t C urrent +/- 10 mA

Current Sense Maximum Volta ge

-3

+15

Electro static Discharge (H um an Body Mo del: R=1.5Ω ; C=100pF)

- INPU T

- CURRENT SENSE

- OUTPU T

- V

CC

Maximum Switching Energy (L=1.8mH; R

=0Ω; V

L

=13.5V; T

bat

=150ºC; IL=9A)

jstart

4000 2000 5000 5000

100 mJ

Power Dissipation at TC=25°C 74 W Junction Operating Temperature Internally Limited °C

j

Case Operating Temperature - 40 to 150 °C

c

Storage Temperature - 55 to 150 °C

V V

V V V V

CONNECTION DIAGRAM (TOP VIEW)

GROUND INPUT2 INPUT1 C.SENSE1 C.SENSE2

6 7 8 9

10

11

V

CC

CURRENT AND VOLTAGE CONVENTIONS

I

IN1

V

IN1

I

IN2

V

IN2

INPUT1

CURRENT SENSE 1

INPUT2

CURRENT SENSE 2

GROUND

V

CC

OUTPUT1

OUTPUT2

I

GND

5 4 3 2 1

V

I

OUT1

I

SENSE1

I

OUT2

I

SENSE2

V

OUT2

OUTPUT 2 OUTPUT 2 N.C. OUTPUT 1 OUTPUT 1

I

S

SENSE1

V

OUT1

V

CC

2/17

VND830ASP

THERMAL DATA

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air

flow

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)

(Per each channel) POWER OUTPUT

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

V

USD

V

OV

R

ON

V

clamp

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Thermal R esistanc e Junction-case 1.2 °C/W

Thermal Resistanc e Junctio n-ambient 51.2 (*) °C/W

Operating Supply Voltage 5.5 13 36 V Undervolt age Shut- down 3 4 5.5 V Overvolt age Shut-down 36 V

=2A; Tj=25°C

I

On State Resistance

OUT

I

=2A; Tj=150°C

OUT

Clamp voltage ICC=20 mA (see note 1) 41 48 55 V

Supply Current

S

Off State Output Current VIN=V Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V

Off State; V Off State; V T

=25°C

j

On State; V R

SENSE

OUT

OUT OUT

=13V; V

CC

=13V; V

CC

IN=VOUT IN=VOUT

=0V =0V;

12

=5V; VCC=13V; I

IN

OUT

=0A;

=3.9KΩ

=0V; VCC=36V; Tj=125°C 0 50 µA

=3.5V -75 0 µA

OUT

=0V; VCC=13V; Tj =125°C 5 µA =0V; VCC=13V; Tj =25°C 3 µA

60

120

40

25

7

mΩ mΩ

µA

mA

SWITCHING (VCC =13V)

Symbol Parameter Test Conditions Min Typ Max Unit

R

=6.5Ω from VIN rising edge to

t

d(on)

t

d(off)

Turn-on Delay Time

Turn-off Delay Ti me

L

=1.3V

V

OUT

RL=6.5Ω from VIN falling edge to V

=11.7V

OUT

30 µs

See

/dt

dV

OUT

Turn-on Voltage Slope RL=6.5Ω from V

(on)

=1.3V to V

OUT

=10.4V

relative

diagram

See

/dt

dV

OUT

Turn-off Volta g e Slope RL=6.5Ω from V

(off)

=11.7V to V

OUT

=1.3V

relative

diagra m

LOGIC INPUT (Channels 1,2)

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

V

I

V

I(hyst)

V

Note 1: V

Input low level voltage 1.25 V

IL

Low level input current VIN=1.25V 1 µA

IL

Input high level voltage 3.25 V

IH

High level input current VIN=3.25V 10 µA

IH

Input hy steresi s vo l ta ge 0. 5 V

I

Input clamp voltage

ICL

and VOV are correlated. Typical difference is 5V.

clamp

IN

I

IN

=1mA =-1mA

66.8

-0.7

8V

V/µs

V

3/17

1

VND830ASP

ELECTRICAL CHARACTERISTICS (continued)

VCC - OUTPUT DIODE

Symbol Parameter Test Conditions Min Typ Max Unit

V

F

Forward on Voltage -I

PROTECTIONS

Symbol Parameter Test Conditions Min T yp Max Unit

I

Current limit ati on

lim

T

V

demag

V

HYST

Thermal shut-down

TSD

temper ature Thermal reset temperature 135 °C

T

R

Thermal hystere sis 7 1 5 °C Turn-of f ou tp ut vo lt age clam p I Output voltage drop limitation I

ON

=2A; Tj=150°C 0.6 V

OUT

Vcc=13 V

691515A

5.5V<Vcc<36V 150 175 2 00 °C

=2A; VIN=0V; L=6m H VCC-41 VCC-48 VCC-55 V

OUT

=10mA 50 mV

OUT

A

CURRENT SENSE (9V≤V

≤16V) (See figure 1)

CC

Symbol Parameter Test Conditions Min Typ Max Unit

K

dK

K

dK

K

dK

I

SENSE

V

SENSE

V

SENSEH

I

0

OUT/ISENSE

I

1

OUT/ISENSE

Current Sense Ratio Drift

1/K1

I

2

OUT/ISENSE

Current Sense Ratio Drift

2/K2

I

3

OUT/ISENSE

Current Sense Ratio Drift

3/K3

Analog Sense Leakage Current

Max Analog Sense Output Voltage

Sense Vo lt age in Overtem perature conditions

OUT1

OUT2

=0.05A; V

other channels open; T I

or I

OUT1

OUT2

=0.25A; V

other channels open; Tj= -40°C...150°C I

or I

OUT2

=0.25A; V

=1.6A; V

=-40°C

j

=1.6A; V

=2.5A; V

OUT1

other channels open; Tj= -40°C...150°C I

OUT1

channels open; T T

=25°C...150°C

j

I

OUT1

channels open; Tj=-40°C...150°C I

OUT1

channels open; Tj=-40°C T

=25°C...150°C

j

I

or I

OUT1

channels open; Tj=-40°C...150°C V

=0V; I

IN

T

=-40°C...150°C

j

V

=5V; I

IN

T

=-40°C...150°C

j

=5.5V ; I

V

CC

V

>8V, I

CC

=13V; R

V

CC

OUT2

OUT

OUT1,2

SENSE

=2.5A; V

=0A; V

=1.3A; R

=2.5A; R

=3.9kΩ

SENSE

=0.5V;

SENSE

= -40°C...150°C

j

=0.5V;

SENSE

=0.5V;

SENSE

=4V; ot he r

SENSE

=4V; ot he r

SENSE

=4V; ot he r

SENSE

=4V; ot he r

SENSE

=0V;

=10kΩ

SENSE

=10kΩ

SENSE

600 1300 2000

1000 1400 1900

-10 +10 %

1280

1300

1500

1800

1780

-6 +6 %

1280

1340

1500

1680

1600

-6 +6 %

0

5

10

2 4

5.5 V

I

or I

Analog Sense Output

R

VSENSEH

Impeda nce in

VCC=13V; Tj>T

; All Channels Open 400 Ω

TSD

Overtemperatur e Condition

t

DSENSE

Curre nt sense dela y response

to 90% I

(see note 2) 500 µs

SENSE

µA

V V

Note 2: current sense signal delay after positive input sl ope.

Note: Sense pin doesn’t have to be left floating.

4/17

TRUTH TABLE (per channel)

CONDITIONS INPUT OUTPUT SENSE

Normal op eration

Overtemperature

Undervoltage

Overvoltage

L

H

L

H

L

H

L

H

L

Short circuit to GND

H H

Short circuit to V

CC

Negative output voltage clamp

L

H

LL 0

ELECTRICAL TRANS IENT REQUIREMENTS

VND830ASP

L H L L L L L L L L L

(T

j<TTSD

(T

j>TTSD

H H

0

Nominal

0

V

SENSEH

0 0 0 0

0 ) 0 ) V

SENSEH

0

< Nomin a l

ISO T/R 7637/1

Test Pulse

I II III IV Delays and

TEST LEVELS

Impedance

1 -25 V -50 V -75 V -100 V 2 m s 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -2 5 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

ISO T/R 7637/1

Test Pulse

I II III IV

TEST LEVE LS RESULTS

Ω

1CCCC

2CCCC 3aCCCC 3bCCCC

4CCCC

5C E E E

CLASS CONTENTS

C All funct ions of t he device are performed as designed aft er exposure to disturbance. E

One or more functions of the device is not performed as designed after exposure to disturbance and cann ot be returned to proper opera tion without repl acing the d evice.

Ω

5/17

VND830ASP

Figur e 1: I

OUT/ISENSE

versus I

OUT

Iout/Isense

2250

2000

1750

max Tj=25...150ºC

1500

min Tj=25...150ºC

1250

1000

750

500

0 0.5 1 1.5 2 2.5 3

Iout (A)

Figur e 2: Switching Characteristics (Resistive load RL=6.5Ω)

max Tj= -40ºC

typical value

min Tj= -40ºC

V

OUT

dV

OUT

I

SENSE

INPUT

/dt

(on)

t

d(on)

80%

90%

t

DSENSE

90%

dV

/dt

OUT

(off)

t

r

10%

t

f

t

d(off)

t

6/17