
®
VND830ASP
DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE R
DS(on)
I
OUT
V
CC
VND830ASP 60 mΩ (*) 6 A (*) 36 V (*)
(*) Per channel
■ DC SHORT CIRCUIT CURRENT: 6A
■ CMOS COMPATIBLE INPUTS
■ PROPORTIONAL LOAD CURRENT SENSE
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUT-DOWN
■ OVERVOLTAGE CLAMP
■ THERMAL SHUT-DOWN
■ CURRENT LIMITATION
■ VERY LOW STAND-BY POWER DISSIPATION
■ PROTECTI ON AGAINST:
LOSS OF GROUND AND LOSS OF V
■ REVERSE BATTERY PROTECTION (**)
CC
DESCRIPTION
The VND830ASP is a monolithic device made using
STMicroelect ronics VIPower M0-3 technology. It
is intende d for driving any kind o f load with one
BLO C K DIAG RA M
10
1
PowerSO-10
™
ORDER CODES
PACKAGE TUBE T&R
VND830ASP VND830ASP13TR
PowerSO-10
™
side connected to ground. A cti ve VCC pin voltage
clamp protects the device against low energy
spikes (see ISO7637 transient compatibility table).
This device has two channels in high side
configuration; each channel has an ana log sense
output on which the sensing current is proportional
(according to a known rati o ) to the corr esponding
load current. Built-in thermal shut-down and
outputs current limitation protect the chip from
over temperature and short circuit. Device turns off
in case of ground pin disconnection.
V
CC
OVERVOLTAGE
V
CLAMP
CC
INPUT 1
INPUT 2
GND
OVERTEMP. 1
OVERTEMP. 2
(**) See application schematic at page 8
LOGIC
Ot1
Ot2
UNDERVOLTAGE
DRIVER 1
I
OUT1
DRIVER 2
I
OUT2
PwCLAMP 1
I
LIM1
V
dslim1
K
PwCLAMP 2
I
LIM2
V
dslim2
K
OUTPUT 1
Ot1
CURRENT
SENSE 1
OUTPUT 2
Ot2
CURRENT
SENSE 2
November 2003 1/17

VND830ASP
ABSOLUTE MAXIMUM RATI NG
Symbol Parameter Value Unit
V
-V
-I
GND
I
OUT
I
V
CSENSE
V
E
MAX
P
T
CC
I
R
IN
ESD
tot
T
T
stg
DC Supply Voltag e 41 V
Reverse Supply Voltage - 0.3 V
CC
DC Reverse Ground Pin Current - 200 mA
Output Current Internally Limited A
Reverse Output Current - 6 A
Inpu t C urrent +/- 10 mA
Current Sense Maximum Volta ge
-3
+15
Electro static Discharge (H um an Body Mo del: R=1.5Ω ; C=100pF)
- INPU T
- CURRENT SENSE
- OUTPU T
- V
CC
Maximum Switching Energy
(L=1.8mH; R
=0Ω; V
L
=13.5V; T
bat
=150ºC; IL=9A)
jstart
4000
2000
5000
5000
100 mJ
Power Dissipation at TC=25°C 74 W
Junction Operating Temperature Internally Limited °C
j
Case Operating Temperature - 40 to 150 °C
c
Storage Temperature - 55 to 150 °C
V
V
V
V
V
V
CONNECTION DIAGRAM (TOP VIEW)
GROUND
INPUT2
INPUT1
C.SENSE1
C.SENSE2
6
7
8
9
10
11
V
CC
CURRENT AND VOLTAGE CONVENTIONS
I
IN1
V
IN1
I
IN2
V
IN2
INPUT1
CURRENT SENSE 1
INPUT2
CURRENT SENSE 2
GROUND
V
CC
OUTPUT1
OUTPUT2
I
GND
5
4
3
2
1
V
I
OUT1
I
SENSE1
I
OUT2
I
SENSE2
SENSE2
V
V
OUT2
OUTPUT 2
OUTPUT 2
N.C.
OUTPUT 1
OUTPUT 1
I
S
SENSE1
V
OUT1
V
CC
2/17

VND830ASP
THERMAL DATA
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air
flow
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)
(Per each channel)
POWER OUTPUT
Symbol Parameter Test Conditions Min Typ Max Unit
V
CC
V
USD
V
OV
R
ON
V
clamp
I
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Thermal R esistanc e Junction-case 1.2 °C/W
Thermal Resistanc e Junctio n-ambient 51.2 (*) °C/W
Operating Supply Voltage 5.5 13 36 V
Undervolt age Shut- down 3 4 5.5 V
Overvolt age Shut-down 36 V
=2A; Tj=25°C
I
On State Resistance
OUT
I
=2A; Tj=150°C
OUT
Clamp voltage ICC=20 mA (see note 1) 41 48 55 V
Supply Current
S
Off State Output Current VIN=V
Off State Output Current VIN=0V; V
Off State Output Current VIN=V
Off State Output Current VIN=V
Off State; V
Off State; V
T
=25°C
j
On State; V
R
SENSE
OUT
OUT
OUT
=13V; V
CC
=13V; V
CC
IN=VOUT
IN=VOUT
=0V
=0V;
12
12
=5V; VCC=13V; I
IN
OUT
=0A;
=3.9KΩ
=0V; VCC=36V; Tj=125°C 0 50 µA
=3.5V -75 0 µA
OUT
=0V; VCC=13V; Tj =125°C 5 µA
=0V; VCC=13V; Tj =25°C 3 µA
60
120
40
25
7
mΩ
mΩ
µA
µA
mA
SWITCHING (VCC =13V)
Symbol Parameter Test Conditions Min Typ Max Unit
R
=6.5Ω from VIN rising edge to
t
d(on)
t
d(off)
Turn-on Delay Time
Turn-off Delay Ti me
L
=1.3V
V
OUT
RL=6.5Ω from VIN falling edge to
V
=11.7V
OUT
30 µs
30 µs
See
/dt
dV
OUT
Turn-on Voltage Slope RL=6.5Ω from V
(on)
=1.3V to V
OUT
OUT
=10.4V
relative
diagram
See
/dt
dV
OUT
Turn-off Volta g e Slope RL=6.5Ω from V
(off)
=11.7V to V
OUT
OUT
=1.3V
relative
diagra m
LOGIC INPUT (Channels 1,2)
Symbol Parameter Test Conditions Min Typ Max Unit
V
I
V
I
V
I(hyst)
V
Note 1: V
Input low level voltage 1.25 V
IL
Low level input current VIN=1.25V 1 µA
IL
Input high level voltage 3.25 V
IH
High level input current VIN=3.25V 10 µA
IH
Input hy steresi s vo l ta ge 0. 5 V
I
Input clamp voltage
ICL
and VOV are correlated. Typical difference is 5V.
clamp
IN
I
IN
=1mA
=-1mA
66.8
-0.7
8V
V/µs
V/µs
V
3/17
1

VND830ASP
ELECTRICAL CHARACTERISTICS (continued)
VCC - OUTPUT DIODE
Symbol Parameter Test Conditions Min Typ Max Unit
V
F
Forward on Voltage -I
PROTECTIONS
Symbol Parameter Test Conditions Min T yp Max Unit
I
Current limit ati on
lim
T
T
V
demag
V
HYST
Thermal shut-down
TSD
temper ature
Thermal reset temperature 135 °C
T
R
Thermal hystere sis 7 1 5 °C
Turn-of f ou tp ut vo lt age clam p I
Output voltage drop limitation I
ON
=2A; Tj=150°C 0.6 V
OUT
Vcc=13 V
691515A
5.5V<Vcc<36V
150 175 2 00 °C
=2A; VIN=0V; L=6m H VCC-41 VCC-48 VCC-55 V
OUT
=10mA 50 mV
OUT
A
CURRENT SENSE (9V≤V
≤16V) (See figure 1)
CC
Symbol Parameter Test Conditions Min Typ Max Unit
K
K
dK
K
dK
K
dK
I
SENSE
V
SENSE
V
SENSEH
I
0
OUT/ISENSE
I
1
OUT/ISENSE
Current Sense Ratio Drift
1/K1
I
2
OUT/ISENSE
Current Sense Ratio Drift
2/K2
I
3
OUT/ISENSE
Current Sense Ratio Drift
3/K3
Analog Sense Leakage Current
Max Analog Sense Output
Voltage
Sense Vo lt age in
Overtem perature conditions
OUT1
OUT2
=0.05A; V
other channels open; T
I
or I
OUT1
OUT2
=0.25A; V
other channels open; Tj= -40°C...150°C
I
or I
or I
or I
or I
OUT2
OUT2
OUT2
OUT2
=0.25A; V
=1.6A; V
=-40°C
j
=1.6A; V
=2.5A; V
OUT1
other channels open; Tj= -40°C...150°C
I
OUT1
channels open; T
T
=25°C...150°C
j
I
OUT1
channels open; Tj=-40°C...150°C
I
OUT1
channels open; Tj=-40°C
T
=25°C...150°C
j
I
or I
OUT1
channels open; Tj=-40°C...150°C
V
=0V; I
IN
T
=-40°C...150°C
j
V
=5V; I
IN
T
=-40°C...150°C
j
=5.5V ; I
V
CC
V
>8V, I
CC
=13V; R
V
CC
OUT2
OUT
OUT
OUT1,2
OUT1,2
SENSE
=2.5A; V
=0A; V
=0A; V
=1.3A; R
=2.5A; R
=3.9kΩ
SENSE
SENSE
=0.5V;
SENSE
= -40°C...150°C
j
=0.5V;
SENSE
=0.5V;
SENSE
=4V; ot he r
SENSE
=4V; ot he r
SENSE
=4V; ot he r
SENSE
=4V; ot he r
SENSE
=0V;
=0V;
=10kΩ
SENSE
=10kΩ
SENSE
600 1300 2000
1000 1400 1900
-10 +10 %
1280
1300
1500
1500
1800
1780
-6 +6 %
1280
1340
1500
1500
1680
1600
-6 +6 %
0
0
5
10
2
4
5.5 V
I
or I
Analog Sense Output
R
VSENSEH
Impeda nce in
VCC=13V; Tj>T
; All Channels Open 400 Ω
TSD
Overtemperatur e Condition
t
DSENSE
Curre nt sense dela y
response
to 90% I
(see note 2) 500 µs
SENSE
µA
µA
V
V
Note 2: current sense signal delay after positive input sl ope.
Note: Sense pin doesn’t have to be left floating.
4/17

TRUTH TABLE (per channel)
CONDITIONS INPUT OUTPUT SENSE
Normal op eration
Overtemperature
Undervoltage
Overvoltage
L
H
L
H
L
H
L
H
L
Short circuit to GND
H
H
Short circuit to V
CC
Negative output voltage
clamp
L
H
LL 0
ELECTRICAL TRANS IENT REQUIREMENTS
VND830ASP
L
H
L
L
L
L
L
L
L
L
L
(T
j<TTSD
(T
j>TTSD
H
H
0
Nominal
0
V
SENSEH
0
0
0
0
0
) 0
) V
SENSEH
0
< Nomin a l
ISO T/R 7637/1
Test Pulse
I II III IV Delays and
TEST LEVELS
Impedance
1 -25 V -50 V -75 V -100 V 2 m s 10 Ω
2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω
3a -2 5 V -50 V -100 V -150 V 0.1 µs 50 Ω
3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω
4 -4 V -5 V -6 V -7 V 100 ms, 0.01
5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2
ISO T/R 7637/1
Test Pulse
I II III IV
TEST LEVE LS RESULTS
Ω
1CCCC
2CCCC
3aCCCC
3bCCCC
4CCCC
5C E E E
CLASS CONTENTS
C All funct ions of t he device are performed as designed aft er exposure to disturbance.
E
One or more functions of the device is not performed as designed after exposure to disturbance
and cann ot be returned to proper opera tion without repl acing the d evice.
Ω
5/17

VND830ASP
Figur e 1: I
OUT/ISENSE
versus I
OUT
Iout/Isense
2250
2000
1750
max Tj=25...150ºC
1500
min Tj=25...150ºC
1250
1000
750
500
0 0.5 1 1.5 2 2.5 3
Iout (A)
Figur e 2: Switching Characteristics (Resistive load RL=6.5Ω)
max Tj= -40ºC
typical value
min Tj= -40ºC
V
OUT
dV
OUT
I
SENSE
INPUT
/dt
(on)
t
d(on)
80%
90%
t
DSENSE
90%
dV
/dt
OUT
(off)
t
r
10%
t
f
t
t
t
d(off)
t
6/17