ST TYNx40 User Manual
®
TYNx40 Series
STANDARD
Table 1: Main Features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
40 A
600 to 1000 V
35 mA
DESCRIPTION
The TYNx40 series is suitable for applications
where in-rush current conditions are critical, such
as overvoltage crowbar protection circuits in
power supplies, in-rush current limiting circuits,
solid state relays (in back to back configuration),
welding equipment, high power motor control
circuits.
Using clip assembly technology, they provide a
superior performance in high surge current
capabilites.
A
G
K
K
A
G
TO-220AB
Table 2: Order Codes
Part Numbers Marking
TYN640RG TYN640
TYN840RG TYN840
40A SCRS
A
TYN1040RG TYN1040
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
IT
(AV)
I
TSM
I
dI/dt
I
GM
P
G(AV)
T
T
V
RGM
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
²
tI²t Value for fusing
Critical rate of rise of on-state current I
, tr ≤ 100 ns
2 x I
GT
Peak gate current
Average gate power dissipation
stg
Storage junction temperature range
Operating junction temperature range
j
Maximum peak reverse gate voltage 5 V
=
G
REV. 5February 2006
tp = 8.3 ms
t
= 10 ms
p
t
= 10 ms Tj = 25°C
p
F = 60 Hz
t
= 20 µs Tj = 125°C
p
T
= 95°C
c
= 95°C
T
c
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
40 A
25 A
480
460
1060
50 A/µs
4A
1W
- 40 to + 150
- 40 to + 125
A
A
°C
2
S
1/6
TYNx40 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Value Unit
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
VD = 12 V RL = 33 Ω
VD = V
RL = 3.3 kΩ Tj = 125°C
DRM
IT = 500 mA Gate open
IG = 1.2 x I
V
= 67 % V
D
GT
Gate open Tj = 125°C
DRM
ITM = 80 A tp = 380 µs Tj = 25°C
T
Threshold voltage
Dynamic resistance
= 125°C
j
T
= 125°C
j
Tj = 25°C
V
= V
DRM
RRM
T
= 125°C
j
MIN. 3.5
MAX. 35
MAX. 1.3 V
MIN. 0.2 V
MAX. 75 mA
MAX. 150 mA
MIN. 1000 V/µs
MAX. 1.6 V
MAX. 0.85 V
MAX. 10 mΩ
5µA
MAX.
4mA
Table 5: Thermal resistance
Symbol Parameter Value Unit
R
R
th(j-c)
th(j-a)
Junction to case (DC) 0.8 °C/W
Junction to ambient (DC) 60 °C/W
mA
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
40
α = 180°
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30
I (A)
T(AV)
2/6
360°
α
Figure 2: Average and D.C. on-state current
versus case temperature
I (A)
T(AV)
50
40
30
20
10
0
0 25 50 75 100 125
D.C.
α = 180°
T (°C)
case
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