Datasheet TYN606, TYN1006 Datasheet (ST)

TYN606

®

STANDARD

Table 1: Main Features

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

6A

600 and 1000 V

15 mA

DESCRIPTION

The TYN606 and TYN1006 family of Silicon Controlled Rectifiers are high performance glass passivated technology.

This general purpose Family of Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load.

A

G

K

A

G

TO-220AB

Table 2: Order Codes

Part Numbers Marking

TYN606RG TYN606

TYN1006RG TYN1006

TYN1006

6A SCRS

A

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

T

I

T(RMS)

IT

(AV)

I

TSM

I

dI/dt

I

GM

P

G(AV)

P

GM

V

DRM

V

RRM

T

RMS on-state current (180° conduction angle)

Average on-state current (180° conduction angle)

Non repetitive surge peak on-state current

²

tI²t Value for fusing

Critical rate of rise of on-state current I

= 100 mA , dIG/dt = 0.1 A/µs

G

Peak gate current

Average gate power dissipation

Maximum gate power

Repetitive peak off-state voltage

stg

Storage junction temperature range Operating junction temperature range

j

Maximum lead temperature for soldering during 10s at 2mm from case 260 °C

L

= 8.3 ms

t

p

t

= 10 ms

p

= 10 ms Tj = 25°C

t

p

t

= 20 µs Tj = 125°C

p

= 20 µs Tj = 125°C

t

p

TYN606

TYN1006 1000

= 110°C

c

T

= 110°C

c

T

= 25°C

j

= 125°C

T

j

T

= 125°C

j

T

= 125°C

j

6A

3.8 A

73

70

24.5

50 A/µs

4A

1W

10 W

600

- 40 to + 150

- 40 to + 125

A

V

°C

2

S

REV. 2February 2006

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TYN606 / TYN1006

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Value Unit

I

GT

V

GT

V

GD

t

gt

I

H

I

L

dV/dt

V

TM

I

DRM

I

RRM

t

q

VD = 12 V (D.C.) RL = 33 Ω

VD = V

RL = 3.3 kΩ T

DRM

IG = 40 mA dIG/dt = 0.5 A/µs

DRM

IT = 100 mA Gate open

IG = 1.2 x IGT

Linear slope up to: V

= 67 % V

D

Gate open

DRM

ITM = 12 A tp = 380 µs

V

= V

DRM

VD = 67 % V dI

TM

RRM

DRM ITM

= 12 A VR = 25 V

/dt = 30 A/µs dVD/dt = 50 V/µs

= 110°C

j

= 110°C

T

j

Tj = 25°C

T

= 110°C

j

= 110°C

T

j

MAX. 15 mA

MAX. 1.5 V

MIN. 0.2 V

TYP. 2 µs

MAX. 30 mA

TYP. 50 mA

MIN. 200 V/µs

MAX. 1.6 V

10 µA

MAX.

2mA

TYP. 70 µs

Table 5: Thermal Resistance

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

Figure 1: Maximum average power dissipation versus average on-state current

P(W)

7

6

5

4

α = 30°

3

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Junction to case (D.C.) 2.5 °C/W

Junction to ambient 60 °C/W

Figure 2: Correlation between maximum average power dissipation and maximum

α = 60°

α = 90°

α = 120°

I (A)

T(AV)

α = 180°

allowable temperature (T

P(W)

7

α = 180°

DC

360°

α

6

5

4

3

2

1

0

0 20 40 60 80 100 120 140

R = 15°C/W

th

R = 10°C/W

th

T (°C)

amb

and T

R = 5°C/W

th

lead

)

T (°C)

lead

R = 0°C/W

th

110

115

120

125

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TYN606 / TYN1006

Figure 3: Average on-state current versus case temperature

I (A)

T(AV)

7

6

5

4

3

2

1

0

0203010 40 6050 70 80 90 100 110 120 130

D.C.

= 180°

α

T (°C)

case

Figure 5: Relative variation of gate trigger current versus junction temperature

I,I,I[T] /

GT H L j

2.5

2

1.5

1

0.5

0

I ,I ,I [T =25°C]

GT H L j

I

GT

IH& I

L

T (°C)

j

-20-30-40 0 10-10 20 4030 50 60 70 80 90 100 110

Figure 4: Relative variation of thermal impedance versus pulse duration

K=[Z /R

th(j-c) th(j-c)

1

Z

0.1

0.01

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

th(j-c)

]

Z

th(j-a)

t (s)

p

Figure 6: Surge peak on-state current versus number of cycles

I (A)

TSM

80

70

60

50

40

30

20

10

0

1 10 100 1000

T initial=25°C

j

Number of cycles

t =10ms

p

One cycle

Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t

TSM

22

T initial = 25°C

j

I

TSM

2

I t

t (ms)

p

2

510

I (A), I t (A s)

100

10

1

Figure 8: On-state characteristics (maximum values)

I (A)

TM

100

Tj=max

10

1

12345

T =25°C

j

V (V)

TM

T max.:

j

V =1.0V

t0

R =46m

d

Ω

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TYN606 / TYN1006

Figure 9: Ordering Information Scheme

Standard SCR series

Voltage

6 = 600V

10 = 100V

Current

06 = 6A

Packing mode

RG = Tube

Table 6: Product Selector

Part Numbers

TYN606RG X 15 mA TO-220AB

TYN1006RG X 15 mA TO-220AB

Figure 10: TO-220AB Package Mechanical Data

B

Ø I

L

A

I4

l3

a1

l2

b1

e

a2

Voltage (xx)

600 V 1000 V

C

b2

F

c2

M

c1

TYN 6 06 RG

Sensitivity Package

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

ØI 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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TYN606 / TYN1006

Table 7: Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode

TYN606RG TYN606

TYN1006RG TYN1006

Table 8: Revision History

Date Revision Description of Changes

Sep-2001 1A First issue.

13-Feb-2006 2

TO-220AB 2.3 g 50 Tube

TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added.

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TYN606 / TYN1006

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