Datasheet TZA3013BU, TZA3013AU Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TZA3013A; TZA3013B

SDH/SONET STM16/OC48
transimpedance amplifier

Product specification
Supersedes data of 2000 Jun 19
File under Integrated Circuits, IC19

2001 Feb 26

Philips Semiconductors Product specification

SDH/SONET STM16/OC48

TZA3013A; TZA3013B

transimpedance amplifier

FEATURES

• Low equivalent input noise, typically 8 pA/√Hz

• Wide dynamic range, typically 6 µA to 1.7 mA (p-p)

• Differential transimpedance of 4 kΩ

• Bandwidth from DC to 1.9 GHz

• Differential outputs

• On-chip Automatic Gain Control (AGC)

• No external components required

• Single supply voltage 3.3 V

• Bias voltage for PIN diode

• Remains linear up to 1.7 mA (p-p) input current

(unclipped)

• Switched output polarity available (types A and B).

ORDERING INFORMATION

TYPE

NUMBER

TZA3013AU − bare die in waffle pack carriers; die dimensions 0.810 × 1.230 mm −
TZA3013BU − bare die in waffle pack carriers; die dimensions 0.810 × 1.230 mm −

NAME DESCRIPTION VERSION

APPLICATIONS

• Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high speed data networks

• Wide-band RF gain block.

GENERAL DESCRIPTION

The TZA3013 is a transimpedance amplifier with AGC,
designed to be used in STM16/OC48 fibre-optic links.
It amplifies the current generated by a photo detector
(PIN diode or avalanche photodiode) and converts it to a
differential output voltage.

PACKAGE

2001 Feb 26 2

Philips Semiconductors Product specification

SDH/SONET STM16/OC48
transimpedance amplifier

BLOCK DIAGRAM

handbook, full pagewidth

100 pF

DREF

V

CC

270

Ω

1

2

IN

GNDA GNDD

GAIN

CONTROL

low noise

amplifier

AGC PILOT

412

TZA3013AU

37, 8 10

INQ

PEAK

DETECTOR

single-ended to

differential converter

BIAS

SOURCE

TZA3013A; TZA3013B

V

CC

Ω

2 kΩ

2 kΩ

TESTD

15

14

OUTSENSE

13

OUT

6

OUTQ

5

OUTQSENSE

11

MGT099

V

CC

50Ω50

9

TESTC

handbook, full pagewidth

100 pF

DREF

Fig.1 Block diagram of TZA3013AU (bare die only).

AGC PILOT

V

CC

270

Ω

1

GAIN

CONTROL

412

DETECTOR

PEAK

V

CC

50Ω50

TZA3013BU

2

IN

low noise

amplifier

GNDA GNDD

single-ended to

differential converter

SOURCE

37, 8 10

INQ

BIAS

TESTC

V

CC

15

Ω

2 kΩ

2 kΩ

9

TESTD

11

5
6

13
14

OUTSENSE
OUT

OUTQ
OUTQSENSE

MGU137

Fig.2 Block diagram of TZA3013BU (bare die only).

2001 Feb 26 3

Philips Semiconductors Product specification

SDH/SONET STM16/OC48

TZA3013A; TZA3013B

transimpedance amplifier

PINNING

SYMBOL

DREF 1 1 analog

IN 2 2 input current input; anode of PIN diode should be connected to

INQ 3 3 input decision level adjust input; note 1
AGC 4 4 analog

OUTQSENSE 5 14 analog

OUTQ 6 13 output data output; compliment of OUT
GNDA 7 7 ground analog ground
GNDA 8 8 ground analog ground
TESTC 9 9 input test input; not used in the application
GNDD 10 10 ground digital ground
TESTD 11 11 input test input; not used in the application
PILOT 12 12 analog

OUT 13 6 output data output; compliment of OUTQ; note 2
OUTSENSE 14 5 analog

V

CC

PAD

TZA3013AU

15 15 supply supply voltage

PAD

TZA3013BU

TYPE DESCRIPTION

bias voltage output for PIN diode; connect cathode of

output

output

output

output

output

PIN diode to this pad

this pad; note 1

AGC voltage

data sense output for OUTQ; for test purposes

pilot tone detection current output

data sense output for OUT; for test purposes

Notes

1. DC bias voltage = 0.86 V.

2. This pad goes HIGH when current flows into pad IN.

2001 Feb 26 4

Philips Semiconductors Product specification

SDH/SONET STM16/OC48
transimpedance amplifier

FUNCTIONAL DESCRIPTION

The TZA3013 is a transimpedance amplifier intended for
use in fibreopticlinks for signal recovery in STM16/OC48
applications. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and
converts it to a differential output voltage.

The most important characteristics of the TZA3013 are
high receiver sensitivity and wide dynamic range. High
receiver sensitivity is achieved by minimizing
transimpedance amplifier noise.

handbook, full pagewidth

OUTSENSE

V

CC

50 Ω

2 kΩ 2 kΩ

OUT

TZA3013A; TZA3013B

The TZA3013 has a wide dynamic range to handle the
signal current generated by the PIN diode which can vary
from6 µA to 1.7 mA (p-p). This is implemented byanAGC
loop which reduces the preamplifier feedback resistance
so that the amplifier remains linear over the whole input
range. The AGC loop hold capacitor is integrated on-chip,
so an external capacitor is not required.

A differential amplifier converts the output of the
preamplifiertoadifferentialvoltage.Thedataoutputcircuit
is shown in Fig.3.

The logic level symbol definitions are shown in Fig.4.

50 Ω

OUTQ

OUTQSENSE

handbook, full pagewidth

V

O(max)

V

V

V

O(min)

OQH

V

OH

OQL

V

OL

16 Ω

16 Ω

Fig.3 Data output circuit.

V

OO

MGT102

V

CC

V

o(p-p)

MGR243

Fig.4 Logic level symbol definitions for data outputs OUT and OUTQ.

2001 Feb 26 5

Philips Semiconductors Product specification

SDH/SONET STM16/OC48
transimpedance amplifier

PIN diode bias voltage DREF

The performance of an optical receiver is largely
determined by the combined effect of the transimpedance
amplifierand the PIN diode. Inparticular, the method used
toconnectthePIN diode to the input and the layout around
the input pad strongly influences the main parameters of a
transimpedance amplifier, such as sensitivity, bandwidth,
and PSRR. Sensitivity is most affected by the value of the
total capacitance at the input pad. Therefore, to obtain the
highest possible sensitivity requires the value of total
capacitance to be as low as possible by reducing the
capacitanceofthePIN diode and the parasitics around the
input pad. To minimizeparasitics, the PIN diode should be
placed as close as physically possible to the IC. The
capacitance of the PIN diode can be reduced by making
the value of reverse voltage across it as high as possible.

The PIN diode can be connected to the input in two ways.
Figure 5 shows the PIN diode connected between
pads DREF and IN.

TZA3013A; TZA3013B

Pad DREF provides an easy bias voltage for the
PIN diode. The voltage at DREF is derived from VCCby a
low-pass filter comprising internal resistor R1and external
capacitor C2 which decouples any supply voltage noise.
The value of external capacitor C2 affects the value of
PSRR and should have a minimum value of 100 pF.
Increasing this value increases the value of PSRR.

For a supply voltage of 3.3 V, the reverse voltage across
the PIN diode is 2.438 V (3.3 V − 0.862 V). It is preferable
toconnect the cathode of the PIN diodetoavoltage higher
than VCC if there is one available on the PCB, leaving
pad DREF unconnected. If a negative supply voltage is
available, the configuration shown in Fig.6 can be used.
It shouldbe noted that inthis configuration, the directionof
the signal current is reversed to that shown in Fig.5. It is
essential that the PIN diode bias voltage is correctly
filtered to achieve the highest possible level of sensitivity.

V

R1

270 Ω

CC

30

TZA3013

MGU120

handbook, halfpage

100 pF

C2

1

DREF

I

i

2IN

Fig.5 ThePIN diodeconnected between the input

and pad DREF.

V

handbook, halfpage

negative supply

1

DREF

2IN

I

i

CC

30

270 Ω

TZA3013

MGT103

Fig.6 ThePIN diodeconnected between the input

and a negative supply voltage.

2001 Feb 26 6

Philips Semiconductors Product specification

SDH/SONET STM16/OC48
transimpedance amplifier

AGC

The TZA3013 transimpedance amplifier can handle input
currents from 6 µA to 1.7 mA which is equivalent to a
dynamic range of 49 dB. At low input currents, the
transimpedance must be high to obtain enough output
voltage, and the noise should be low enough to guarantee
a minimum bit error rate. At high input currents however,
the transimpedance should be low to avoid pulse width
distortion.To achieve the wide dynamic rangerequires the
gain of the amplifier to depend on the level of the input
signal. This is achieved in the TZA3013 by an AGC loop.

TheAGC loop comprises a peakdetector,a hold capacitor
and a gain control circuit. The peak detector detects the
amplitudeofthesignalandtheholdcapacitorstoresit.The
hold capacitor voltage is compared to a threshold voltage
which corresponds to an input current of 50 µA (p-p). The
AGCisonlyactivewhen the input signal level is larger than
the threshold level and is inactive when the input signal is
smaller than the threshold level.

TZA3013A; TZA3013B

When the AGC is inactive, the transimpedance is at its
maximum value of 4 kΩ differential. When the AGC is
active, the feedback resistor value of the transimpedance
amplifier is reduced, reducing its transimpedance, to keep
the output voltage constant. The transimpedance is
regulated from 4 kΩ at low currents (Ii<50µA) to 80 Ω at
highcurrents (Ii= 1.7mA). The AGC allowsthe amplifier to
remainlinearoverthe whole input current range compared
tootherconfigurationswhichclip the large signals, such as
those using Schottky diodes, for example.

ThetophalfofFig.7showstheoutputvoltageatpads OUT
and OUTQ (V
current (II) at a supply voltage of 3.3 V. The bottom half of
Fig.7 shows thedifference between V
output voltage changes linearly up to an input current of
50 µA. At this point and above, the AGC becomes active
and tries to keep the differential output voltage constant,
which is about 220 mV for a large range input current of
<1.7 mA.

OUT

and V

) as a function of DC input

OUTQ

and V

OUT

OUTQ

. The

3.2

handbook, full pagewidth

V

o

(V)

3.1

3.0

2.9

2.8

300

V

o(dif)

(mV)

200

100

0

110

V

o(dif)=VOUT

− V

OUTQ

MGT104

V

OUT

VCC = 3.3 V

V

OUTQ

10

2

3

10

Ii (µA)

4

10

Fig.7 AGC characteristics.

2001 Feb 26 7

Philips Semiconductors Product specification

SDH/SONET STM16/OC48

TZA3013A; TZA3013B

transimpedance amplifier

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

V

n

I

n

P

tot

T

stg

T

j

T

amb

supply voltage −0.5 +3.8 V
DC voltage

pads IN and INQ −0.5 +2.0 V
pads OUT and OUTQ −0.5 V
pads OUTSENSE and OUTQSENSE −0.5 V
pad PILOT −0.5 V
pad DREF −0.5 V

+ 0.5 V

CC

+ 0.5 V

CC

+ 0.5 V

CC

+ 0.5 V

CC

DC current

pads IN and INQ −4.0 +4.0 mA
pads OUT and OUTQ −10 +10 mA
pad PILOT −0.2 +0.2 mA

pad DREF −4.0 +4.0 mA
total power dissipation − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −40 +85 °C

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However it is good practice to take
normal precautions appropriate to handling MOS devices (see

“Handling MOS devices”

).

CHARACTERISTICS

Typical values at Tj=25°C and VCC= 3.3 V; minimum and maximum values are valid over the entire ambient
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
I

CC

CC

supply voltage 3.0 3.3 3.6 V
supply current AC-coupled; RL=50Ω;

− 26 38 mA

without input signal

P

tot

T

j

T

amb

R

tr

f

−3dB(h)

I

n(tot)(rms)

total power dissipation VCC= 3.3 V − 85.8 134 mW
junction temperature −40 − +125 °C
ambient temperature −40 +25 +85 °C
small-signaltransresistance

of the receiver

measured differentially;
AC-coupled

R

= ∞ 3.6 7 10 kΩ

L

R

=50Ω 1.8 3.5 5.0 kΩ

L

high frequency −3 dB point Ci= 0.5 pF 1.7 1.9 − GHz
total integrated RMS noise

current over bandwidth

referenced to input;

∆fi= 1.8 GHz third-order

− 425 − nA

Bessel filter; note 1

2001 Feb 26 8

Philips Semiconductors Product specification

SDH/SONET STM16/OC48

TZA3013A; TZA3013B

transimpedance amplifier

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

PSRR power supply rejection ratio measured differentially;

note 2

f

= 100 kHz to 100 MHz − 38 −µA/V

i

f

= 3 GHz − 3.2 − mA/V

i

Automatic gain control loop: AGC

t

att

t

decay

I

th(AGC)(p-p)

Bias voltage: DREF

R

DREF

Inputs: IN and INQ

I

i(p-p)

V

I(bias)

R

i

Data outputs: OUT and OUTQ

V

o(cm)

V

o(se)(p-p)

V

OO

R

o

t

r

t

f

Notes

1. Measurement performed with Ci= 0.5 pF comprising 0.4 pF (photodiode) and 0.1 pF (allowed for PCB layout).

2. PSRR is defined as the ratio of change in input current (∆Ii) corresponding to change in supply voltage (∆VCC):
PSRR

For example, a 4 mV disturbance on V
current). The value of the external capacitor connected between pads DREF and GNDhas a significant effect on the
value of PSRR. The specification is valid with an external capacitor of 1 nF.

AGC attack time − 10 −µs
AGC decay time − 10 −µs
AGC threshold current

referenced to input − 50 −µA

(peak-to-peak value)

resistance between DREF
and V

CC

input current

tested at DC level 240 270 340 Ω

−1700 − +1700 µA

(peak-to-peak value)
input bias voltage 700 860 1100 mV
small-signal input

resistance

common mode output

tested at 1 MHz;

− 53 −Ω

Ii<20µA (p-p)

AC-coupled; RL=50Ω VCC− 0.5 VCC− 0.25 VCC− 0.1 V

voltage
single-ended load output

voltage (peak-to-peak

AC-coupled; RL=50Ω;
Ii= 100 µA (p-p)

45 110 200 mV

value)
differential output offset

−100 0 +100 mV

voltage
output resistance single-ended; DC tested 40 53 65 Ω
rise time 20% to 80% − 200 − ps
fall time 80% to 20% − 200 − ps

∆I

i

=

-------------- ­∆V

CC

at 10 MHz will typically add an extra 120 nA to Ii (photodiode output

CC

2001 Feb 26 9

Philips Semiconductors Product specification

SDH/SONET STM16/OC48
transimpedance amplifier

TYPICAL PERFORMANCE CHARACTERISTICS

33

handbook, halfpage

I

CC

(mA)

31

29

27

25

23

21

−40

(1) VCC= 3.6 V.
(2) VCC= 3.3 V.
(3) VCC= 3.0 V.

0

40

80

MGT105

(1)

(2)

(3)

160120

Tj (°C)

31

handbook, halfpage

I

CC

(mA)

29

27

25

23

21

3.0 3.2

Tj=25°C.

TZA3013A; TZA3013B

MGT106

3.4 3.6
VCC (V)

Fig.8 Supply current as a function of the junction

temperature.

866

handbook, halfpage

V

I(bias)
(mV)

864

862

860

858

3.0 3.2

Tj=25°C.

3.4 3.6

MGT107

VCC (V)

Fig.9 Supply current as a function of the supply

voltage.

965

handbook, halfpage

V

I(bias)
(mV)

925

885

845

805

765

725

−40

(1) VCC= 3.6 V.
(2) VCC= 3.3 V.
(3) VCC= 3.0 V.

040

80

MGT108

(1)
(2)
(3)

Tj (°C)

160120

Fig.10 Input bias voltage as a function of the

supply voltage.

2001 Feb 26 10

Fig.11 Input bias voltage as a function of the

junction temperature.

Philips Semiconductors Product specification

SDH/SONET STM16/OC48
transimpedance amplifier

290

handbook, halfpage

V

o(cm)
(mV)

270

250

230

210

190

3.0 3.2

Tj=25°C.
(1) VCC− V
(2) VCC− V

OUT
OUTQ

.

.

(1)

3.4

Fig.12 Common modeoutputvoltage as a function

of the supply voltage referenced to VCC.

MGT109

(2)

VCC (V)

3.6

TZA3013A; TZA3013B

340

handbook, halfpage

V

o(cm)

(mV)

300

260

220

180

−40

(1) VCC= 3.6 V.
(2) VCC= 3.3 V.
(3) VCC= 3.0 V.

0

40

80

Fig.13 Common modeoutputvoltage as a function

of the junction temperature referenced to
VCC.

MGT110

(1)

(2)

(3)

Tj (°C)

160120

2001 Feb 26 11

Philips Semiconductors Product specification

SDH/SONET STM16/OC48
transimpedance amplifier

APPLICATION AND TEST INFORMATION

handbook, full pagewidth

1 nF

V

15

DREF

1

100

pF

IN

2

TZA3013A

10 µH

CC

7, 8, 10

GND

680 nF

TZA3013A; TZA3013B

V

P

transmission

OUT

13

OUTQ

6

line

Zo = 50 Ω

Zo = 50 Ω

100 nF

100 nF

R3
50 Ω

R4
50 Ω

MGT112

handbook, full pagewidth

PATTERN

GENERATOR

23

2

−1 PRBS CLOCK

23

−1 PRBS

2
DATA

Zo = 50 Ω

Fig.14 Application diagram.

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

V

CC

10 nF

60 Ω

330 Ω

R

IN

OUT

TZA3013

OUTQ

GND

100 nF

100 nF

Zo = 50 Ω

SAMPLING OSC

1
2

Zo = 50 Ω

MGT113

trigger
input

Total impedance of the test circuit = ZTand is calculated by the equation
where s
Typical values: R = 330 Ω, Z

is the insertion loss of ports 1 and 2.

21

=73Ω.

IN

ZTs21RZIN+()2××=

Fig.15 Test circuit.

2001 Feb 26 12

Philips Semiconductors Product specification

SDH/SONET STM16/OC48

TZA3013A; TZA3013B

transimpedance amplifier

BONDING PAD LOCATIONS

SYMBOL PAD TZA3013AU PAD TZA3013BU

DREF 1 1 −440 +155
IN 2 2 −440 +10
INQ 3 3 −440 −157
AGC 4 4 −266 −255
OUTQSENSE 5 −−40 −255

− 14 −40 +255

OUTQ 6 − +116 −255

− 13 +110 +255
GNDA 7 7 +256 −255
GNDA 8 8 +398 −255
TESTC 9 9 +448 −79
GNDD 10 10 +448 +70
TESTD 11 11 +410 +255
PILOT 12 12 +260 +255
OUT 13 − +110 +255

− 6 +116 −255
OUTSENSE 14 −−40 +255

− 5 −40 −255
V

CC

15 15 −266 +255

COORDINATES

xy

(1)

Note

1. All coordinates are referenced, in µm, to the centre of the die.

2001 Feb 26 13

Philips Semiconductors Product specification

SDH/SONET STM16/OC48
transimpedance amplifier

handbook, halfpage

CC

OUTSENSE

TZA3013AU

0

0

y

OUTQSENSE

OUT

OUTQ

810

µm

DREF

INQ

V

15 14 13 12 11

1

IN

x

2
3

45678

AGC

1230 µm

TZA3013A; TZA3013B

handbook, halfpage

PILOT

TESTDGNDA

810

µm

DREF

IN

INQ

10

GNDA

9

MGT101

GNDD
TESTC

CC

OUTQSENSE

TZA3013BU

0

0

y

OUTSENSE

OUTQ

OUT

V

15 14 13 12 11

1

x

2
3

45678

AGC

1230 µm

PILOT

TESTDGNDA

10

9

GNDA

GNDD
TESTC

MGT167

Fig.16 Bonding pad locations of the TZA3013AU.

Fig.17 Bonding pad locations of the TZA3013BU.

Physical characteristics of the bare die

PARAMETER VALUE

Glass passivation 0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm silicon nitride
Bonding pad dimension minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)

except pads 2 and 3 which have exposed metallization of 80 × 80 µm

(pad size = 90 × 90 µm)
Metallization 2.8 µm AlCu
Thickness 380 µm nominal
Size 0.810× 1.230 mm (0.996 mm

2

)
Backing silicon; electrically connected to GND potential through substrate contacts
Attach temperature <440 °C; recommended die attach is glue
Attach time <15 s

2001 Feb 26 14

Philips Semiconductors Product specification

SDH/SONET STM16/OC48

TZA3013A; TZA3013B

transimpedance amplifier

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditions above thosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected toresult in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyof these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products,and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

BARE DIE DISCLAIMER

All die are tested and are guaranteed to comply with all
data sheet limits up to the point of wafer sawing for a
periodof ninety (90) daysfrom the date ofPhilips' delivery.
If there are data sheet limits not guaranteed, these will be
separately indicated in the data sheet. There is no post
waffle pack testing performed on individual die. Although
the most modern processes are utilized for wafer sawing
and die pick and place into waffle pack carriers, Philips
Semiconductorshas no control of third partyprocedures in
the handling, packing or assembly of the die. Accordingly,
Philips Semiconductors assumes no liability for device
functionality or performance of the die or systems after
handling, packing or assembly of the die. It is the
responsibility of the customer to test and qualify their
application in which the die is used.

(1)

2001 Feb 26 15

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72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A,

Tel: [phone], Fax: [phone]
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips DevelopmentCorporation, SemiconductorsDivision,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2001

Internet: http://www.semiconductors.philips.com

71

Printed in The Netherlands 403510/300/02/pp16 Date of release:2001 Feb 26 Document order number: 9397 750 08038