Datasheet TZA1000 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TZA1000

QIC read-write amplifier

Preliminary specification
Supersedes data of 1998 Mar 11
File under Integrated Circuits, IC01

1998 Mar 17

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

FEATURES

• 3-wire serial interface for programming

• On-chip Digital-to-Analog Converters (DAC) for:

– MR (Magneto Resistive) sense bias current
– MR DC bias current
– Write current

• Low noise differential input stage: typically 0.65 nV/√Hz
(Zi=0Ω)

• Magnetic feedback circuit to handle large output signals

• MR DC bias current circuit

• Very fast write current rise and fall times with near

rail-to-rail voltage swing

• Maximum write current of 100 mA: ready for high
coercivity tape

• Low noise read amplifier for reading track height servo
signals with the write coil

• Very few external components required

• On board registers for easy format or bit rate selection

• Fast read-after-write recovery time

• Test circuit for yoke-type heads

• Switchable differentiator for yoke-type heads, with

programmable cut-off frequencies

• Anti-aliasing low-pass filter, with programmable cut-off
frequencies

• AGC (Automatic Gain Control) options: internally
(digitally) controlled, externally controlled or fixed gain

• Hold input for fast AGC freeze

• Input for fast reader/writer (track height servo) signal

selection

• Power fail detection on both 5 and 12 V lines (status can
be read from the read register)

• Write unsafe detection

• Provides an accurate reference voltage (for AD

conversion)

• Very simple interconnection with the SZA1000 QIC
digital equalizer

• +5 V ±10% and +12 V ±10% supply voltages

• Low power standby, active and test modes.

RELATED DOCUMENTS

• SZA1000 QIC digital equalizer data sheet

• Application notes for TZA1000 and SZA1000.

Both are available from Philips Semiconductors.

GENERAL DESCRIPTION

The TZA1000 is a single-chip read-write amplifier for
single-channel QIC (Quarter Inch Cartridge) systems with
MR heads. It can be used with both SIG (Sensor in Gap)­and yoke-type MR heads and is designed to be used in
conjunction with the Philips SZA1000 digital equalizer IC
(although it can also function as a stand alone unit). This
combination is flexible enough to be used with all popular
tape backup formats including QIC 80, QIC 3010,
QIC 3020, QIC 3080, QIC 5010, Travan 1, Travan 2,
Travan 3 and Travan 4 and to be forward compatible with
their single channel successors.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD1

V

DD2

V

DD3

I

DD1;IDD2

read circuit supply voltage 4.5 5 5.5 V
FB and write circuit supply voltage 4.5 5 5.5 V
sense current circuit supply voltage 10.8 12 13.2 V
read/FB and write circuit supply current

Read mode − 69 − mA

I

DD3

V

n(i)(eq)

f

clk

T

amb

T

j

R

th(j-a)

Write mode I
sense current circuit supply current I
equivalent input noise voltage Z
clock frequency −−24 MHz
recommended operating temperature 0 − 70 °C
recommended junction temperature 0 − 125 °C
thermal resistance from junction to ambient in free air − 66 − K/W

=30mA − 105 − mA

write

= 16 mA 15.0 16.2 19.0 mA

sense

=0Ω− 0.65 0.8 nV/√Hz

source

1998 Mar 17 2

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

ORDERING INFORMATION

TYPE

NUMBER

TZA1000 SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1

NAME DESCRIPTION VERSION

PACKAGE

1998 Mar 17 3

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1998 Mar 17 4

handbook, full pagewidth

BLOCK DIAGRAM

QIC read-write amplifier TZA1000

Philips Semiconductors Preliminary specification

MR

HEAD

BIAS

(YOKE)

WRITER

12 V

V

DD3

ISENSE

INA

INB

BIASA
BIASB

WX
WY

17

19
18

13

20

15
12

11

22

21

MGG660

5

V

5 V

DD1

V

5 V

DD2

OUTA
OUTB

HOLD

V

ref

CLK
SDIO

10

SCLK
SDEN

RESET

I

ref

9
8

6

7

24
23

1
3

SENSE

CURRENT

SOURCE

0 to 30 mA

PREAMP

4/34/40 dB

−10 dB

−4 dB

13 dB

BIAS

+ FB

SERVO
PREAMP

WRITE

CIRCUIT

10 to 100 mA

WGATE

WD

DAC

(I)

DAC

(I)

TOGGLE

WDI to WD

7+1-bit

7-bit

VARIABLE

GAIN

10 to 25 dB

4 to 19 dB

TEST

GEN

DAC

(V)

WRITE

UNSAFE

DETECTOR

5-bit

V

SS1

2

HPF

1 to 10 MHz

AGC

CONTROL

CIRCUIT

1614 4

V

SS2

TZA1000

22 dB

LEVEL

DETECTOR

SIG/

YOKE

INTERNAL

REFERENCE

VOLTAGES

LPF

1 to 10 MHz

V

DD3

V

DD1

0 dB

BANDGAP

REF

CONTROL

CIRCUIT

POWER

FAIL

DETECTOR

CURRENT

REF

Fig.1 Block diagram.

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

PINNING

SYMBOL PIN DESCRIPTION TYPE

WX 1 write current to head O
V

SS1

2 large signal ground P
WY 3 write current to head O
WD 4 write data I
V

DD1

5 large signal +5 V P

(2)

INA 6 read signal from MR I
INB 7 read signal from MR I
ISENSE 8 sense current for MR O
V

DD3

9 +12 V for sense current

P

supply
SCLK 10 serial interface clock I
SDEN 11 serial interface enable I

(2)
(2)

SDIO 12 serial interface data I/O I/O
HOLD 13 hold AGC; active LOW I
WGATE 14 write gate; active LOW I
CLK 15 clock input I
V
V

SS2
DD2

16 small signal ground P
17 small signal +5 V P

(2)
(2)
(2)

OUTB 18 output to equalizer O
OUTA 19 output to equalizer O
V

ref

I

ref

RESET 22 reset for microcontroller;

20 2 V reference output O
21 current reference resistor note 3

O

active LOW
BIASB 23 bias current for yoke heads O
BIASA 24 bias current for yoke heads O

(1)

handbook, halfpage

WX

1

V

2

SS1

WY

3

WD

4

V

5

DD1

INA

6
7
8

9
10
11
12

TZA1000

MGG659

INB

ISENSE

V

DD3

SCLK

SDEN

SDIO

Fig.2 Pin configuration.

24
23
22
21
20
19
18
17

16
15
14
13

BIASA
BIASB

RESET
I

ref

V

ref

OUTA
OUTB
V

DD2

V

SS2

CLK

WGATE
HOLD

Notes

1. Pin type abbreviations: O = output, I = input,
P = power supply.

2. Digital inputs: LOW: <0.3V

; HIGH: >0.7VDD.

DD

3. Use only for connecting current reference resistor.

See Chapter “Equivalent pin circuits” for the I/O
configuration of the analog pins.

1998 Mar 17 5

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

FUNCTIONAL DESCRIPTION
The preamplifier

The gain and dynamic range of the symmetrical low noise
preamplifier can be varied to accommodate a wide
variation in input signal amplitude (see Table 11).
The 40 dB and 34 dB gain settings are provided for normal
use. The 40 dB setting offers the lowest noise figure. The
4 dB gain setting is intended for IC testing only.

The servo preamplifier

This low noise preamplifier can be used for reading
signals, such as QIC 3095 (Travan 4) servo signals, via
the recording head write coil. Servo mode is selected
either by resetting bits AI0 and AI1 in the control register
(see Table 9) or by means of the
control bit must be set when HOLD goes LOW; see
Table 7). When servo mode is selected, the maximum
total gain is set automatically regardless of, and without
overwriting, gain settings. Fast switch-over from read
mode to servo mode can thus be achieved without having
to alter register values.

Variable gain stage and AGC

The input to the variable gain stage can be switched to the
preamplifier output, to the output of the bias/FB (Feed
Back) circuit, or to the servo preamplifier output. When
using magnetic feedback, the bias/FB circuit output should
be selected (see Table 9).

The AGC range is 15 dB. The gain is programmable in
1 dB steps (see Table 12). If the output signal is too small,
a digital control circuit will increase the gain from minimum
to maximum in approximately 10 ms. If the output signal is
too large, the gain will be reduced from maximum to
minimum in approximately 0.2 ms. These values assume
a 24 MHz clock frequency. The upper limit of the gain
control range can be extended by 6 dB by setting the
G6DB bit in the control register via the serial interface (see
Table 13).

HOLD pin (the HSM

The AGC will maintain outputs OUTA and OUTB at

1.1 V (p-p). Additional level adjustment points are
provided by the 34 or 40 dB preamplifier gain switch (see
Table 11) and the −10 or −4 dB bias output attenuation
switch (see Table 9).

High-pass filter

The HPF (High-Pass Filter) is used to differentiate
yoke-type head signals. It is followed by an additional gain
stage (21 dB). The HPF cut-off frequency is coupled to the
cut-off frequency of the LPF (Low-Pass Filter), and is
selectable in 4 steps: 1, 2, 4 and 10 MHz (see Table 2).
The HPF can be bypassed for SIG heads (see Table 8).

Low-pass filter

The second order low-pass filter is used to attenuate high
frequency noise above the signal bandwidth, mainly to
provide anti-aliasing filtering for the A/D converter in the
digital equalizer. The cut-off frequency of the LPF is
selectable in 4 steps: 1, 2, 4 and 10 MHz (see Table 2).

Sense current circuit

The sense current circuit is a programmable current
source, operating from the 12 V supply (V
programmed to supply a current between 0 and 15 mA,
with 7-bit resolution. The current range can be doubled,
then ranging from 0 to 30 mA, by setting the SDB bit in the
control register (see Table 15). The sense current circuit
can be disabled by resetting the ENS bit (see Table 4).

This is the only circuit on the IC that uses the 12 V supply.
The output must be decoupled with a low impedance
capacitor (10 µF recommended) to reduce noise coupling
into the head.

For the current source circuit to operate correctly, the
voltage difference between V
(pin 8) must be at least 1.6 V.

(pin 9) and ISENSE

DD3

). It can be

DD3

The AGC is frozen while the
TZA1000 is writing, or the IC is in servo mode.

The AGC can be operated internally, running on the CLK
clock signal on pin 15 (HOLD HIGH and GFXD LOW; see
Table 12), or externally by means of a software algorithm
(GFXD HIGH). When operated externally, either the DN bit
in the status read register (see Table 17) or the level
measurement in the digital equalizer IC (SZA1000) can be
used as input to the algorithm.

1998 Mar 17 6

HOLD input is LOW, the

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

Bias and magnetic feedback circuit

This circuit can be used to generate AC and DC bias
currents (for a yoke-type MR head, for instance).
The DC bias output voltage is programmable
between 0 and 1.4 V, with 5-bit resolution (see Table 3).
The DC current generated is this voltage divided by the
total bias resistance (head coil + total series resistance).

The AC signal input to the circuit can be switched to the
preamplifier output (see Table 10). In this way, magnetic
feedback inside the head can be achieved. This limits
head distortion, and prevents head saturation from large
tape signals, like QIC 80 recordings.

The open loop gain of the feedback loop depends on head
sensitivity, the selected sense current (see Table 15), and
the selected preamplifier gain (see Table 11). The values
of the external resistors connected in series with the bias
conductor can be used to set the gain. For loop stability at
high frequencies, the bandwidth of the magnetic feedback
amplifier is limited to 5 MHz.

In closed loop mode, the effective cut-off frequency for the
playback signals will increase with the feedback factor. For
this reason the read signal can be taken from the output of
the bias circuit.

To prevent loop instability at low frequencies, the
preamplifier input capacitors should be chosen such that
the cut-off frequency at that point is well above, or well
below, the internal cut-off frequency of the AC coupling
between the preamplifier and the bias circuit (input
impedance of the preamplifier is typically 2 kΩ).

The maximum (peak AC) current that the bias circuit can
deliver can be adjusted to achieve an optimum balance
between required current range and power consumption
(see Table 3). The AC circuit is switched off when the
TZA1000 is writing, and the maximum current is switched
to 10 mA. This limits power dissipation during writing.

Test generator

1

This circuit generates a test signal with a frequency

⁄

16

that of the signal at the CLK input (pin 15). By switching the
AC input of the bias circuit to the internal test generator
(see Table 10), the read channel can be tested.
The differential output value is typically 100 mV (p-p).

This facility can also be used to adjust the DC bias voltage
while monitoring the signal at the read element in the head.
The optimum DC bias level setting is just before the output
from the read head reaches its peak.

Write circuit

The write circuit is a differential current source that can
generate a near rail-to-rail output voltage to get the
shortest current transition time. Writing is enabled when
WGATE is LOW. The polarity of the current depends on
the WD input pin. The WDM bit in the control register
determines the write signal mode: WD (Non-Return to
Zero) or WDI (Return to Zero; see Table 14). When WDI
mode is selected, the polarity of the write current is
reversed at every falling edge of the WD input. When WD
mode is selected, the polarity of the write current is
reversed when the polarity of WD changes. The write
current is programmable between 0 and 125 mA, with
7-bit resolution (see Table 14).

The IC is specified for a write current of up to 100 mA.
Overshoot caused by an inductive load can be minimized
by means of a single external resister local to the IC.

Write unsafe detector

The write unsafe detector will detect an open write coil, or
one shorted to ground. The circuit is enabled only while the
TZA1000 is writing. A resistance to GND or V

of less

DD

than 10 Ω, or a series resistance greater that about 300 Ω,
will be detected (these values are write-current
dependant). If an error occurs, the WUS status bit is set.
This bit can be read via the serial interface. The WUS bit
will remain set until the status byte is read.

Power fail detector

The power fail detector will detect a low voltage on the 5 V
(V

) or 12 V (V

DD1

3.75 V for V

DD1

) supply lines. The thresholds are

DD3

and 9 V for V

. A power failure is

DD3

detected if the voltage is below the threshold for 1 µs or
longer. If a 5 V power failure occurs, the status bit PF5 is
set. If a 12 V power failure occurs, the status bit PF12 is
set. These bits can be read via the serial interface, and will
remain HIGH until the status byte is read.

When a 5 V power failure occurs, the RESET output goes
LOW and the write circuit is disabled (in addition to PF5
being set). The RESET output has an internal 18 kΩ pull
down resistor to guarantee a LOW level at the output even
when a power failure occurs. During normal operation, the
RESET pin should not be held LOW by an external circuit,
since this will switch the IC into test mode.

1998 Mar 17 7

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

DACs

There are 3 internal DACs:

1. The Sense DAC: current DAC; 7-bit resolution

2. The Write DAC: current DAC; 7-bit resolution

3. The Bias DAC: voltage DAC; 5-bit resolution.

The Sense and Write DAC current settings are a function
of the reference current I

(at the I

ref

pin). I

ref

is multiplied

ref

by a 7-bit factor: S0 to S6 for the sense DAC, W0 to W6 for
the write DAC (see Tables 14 and 15). If the resistance
between I

and GND is increased (or decreased), the

ref

DAC output currents will be decreased (or increased) by
the same factor. In this way, the DAC output current
ranges can be adjusted.

The current values specified, and the equations used to
calculate Sense and Write currents (see Tables 14
and 15), are for a 430 Ω resistance between I

and GND.

ref

This resistance can be varied between 250 Ω and 1 kΩ,
giving a ±2 × DAC modification range. For reasons of
noise and stability, the voltage at the I

pin should not be

ref

used in any other part of the circuit.

Clock handling

The TZA1000 has 2 clock inputs:

CLK: the general clock input, pin 15
SCLK: the serial interface clock input, pin 10.

CLK is used for status register read and write cycle timing
and for operating the internal AGC. When the AGC is not
being used and serial communications are not active, CLK
may be switched off. This can help reduce crosstalk on the
printed circuit board.

When accessing the status register, the CLK frequency
must be at least 16 × SCLK frequency. It is recommended
that the 24 MHz clock supplied by the SZA1000 be used
directly.

Serial interface

The 3 wire serial interface recognizes 8-bit addresses and
8-bit data. To read data from the status register, hex
address FF must be transmitted. The IC will then respond
with the contents of the 8-bit status register.

1998 Mar 17 8

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1998 Mar 17 9

WRITE SETTINGS

SDEN

SCLK

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Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

SDIO

SDEN

SCLK

SDIO

A7 A6 A5 A4 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0

READ STATUS

A7 A6 A5 A4 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0

ADDRESS AND DATA FROM MICROCONTROLLER DATA FROM IC

3-STATE

Fig.3 Timing diagrams.

3-STATE

MGG661

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

CONTROL REGISTER

The control register contains six 8-bit entries configured as shown in Table 1.

Table 1 Control register settings

ADDRESS D7 D6 D5 D4 D3 D2 D1 D0

0 − FC1 FC0 ENFB1 ENFB0 ENS ENRD ENREF
1 HSM DIFF AI1 AI0 FBI1 FBI0 PG1 PG0
2 −−G6DB GFXD G3 G2 G1 G0
3 −−−B4 B3 B2 B1 B0
4 WDM W6 W5 W4 W3 W2 W1 W0
5 SDB S6 S5 S4 S3 S2 S1 S0

Control bits

Control bit functions are detailed in Tables 2 to 17.

Table 2 HPF and LPF cut-off frequency

FC1 FC0 FREQUENCY

0 0 1 MHz
0 1 2 MHz
1 0 4 MHz
1 1 10 MHz

Table 3 Bias current settings; note 1

ENFB1 ENFB0 BIAS CIRCUIT I

0 0 off 0 0
01on−10 mA +10 mA
1 0 on 0 +10 mA
11on−10 mA +20 mA

Note

1. Control bits B0 to B4 make up a 5-bit number between 0 and 31. The DC bias voltage between BIASA and BIASB
(pins 23 and 24) is B × 45 mV. BIASA is positive with respect to BIASB.

Table 4 Sense current circuit

ENS SENSE CURRENT CIRCUIT

0 disabled
1 enabled

Table 6 Internal reference voltages

ENREF INTERNAL REF. VOLTAGES

0 disabled
1 enabled

bias(min)

I

bias(max)

Table 5 Read circuits (excluding preamplifiers)

ENRD READ CIRCUITS

0 disabled
1 enabled

1998 Mar 17 10

Table 7

HOLD pin function

HSM FUNCTION

0 AGC hold on or off
1 select servo or data preamplifier

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

Table 8 HPF circuit

DIFF HPF CIRCUIT

0 bypassed
1on

Table 9 Variable gain circuit input select

HSM

0 X 0 0 servo preamplifier
0 X 0 1 preamplifier
0 X 1 0 bias output −10 dB
0 X 1 1 bias output −4dB
1 1 0 0 servo preamplifier
1 1 0 1 preamplifier
1 1 1 0 bias output −10 dB
1 1 1 1 bias output −4dB
1 0 X X servo preamplifier

Table 10 Bias circuit input

FBI1 FBI0 INPUT

0 0 no signal
0 1 preamplifier
1 0 test generator
1 1 preamplifier

Table 12 AGC setting

HSM HOLD GFXD AGC

010 on
0 0 0 frozen at last value
110 on
1 0 0 no AGC at servo mode: maximum gain
X X 1 off, gain set by G0 to G3; note 1

HOLD AI1 AI0 INPUT

Table 11 Preamplifier gain

PG1 PG0 GAIN

00 0
0 1 34 dB
10 4dB
1 1 40 dB

Note

1. Control bits G0 to G3 make up a 4-bit number used to program the gain in 1 dB steps (from 4 to 19 dB if G6DB is 0,
from 10 to 25 dB if G6DB is 1; see Table 13).

Table 13 Variable gain circuit range select

G6DB RANGE

0 4 to 19 dB
1 10 to 25 dB

1998 Mar 17 11

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

Table 14 Write mode select; note 1

WDM EXPECTED INPUT SIGNAL FUNCTION

0 WDI on
1 WD bypassed

Note

1. Control bits W0 to W6 make up a 7-bit number between 0 and 127. Write current is

125 W 1+()×

-------------------------------------­128

Table 15 Sense current range select; note 1

Note

mA

= 430 Ω).

(R

ref

SDB CURRENT

0 0 to 15 mA
1 0 to 30 mA

1. Control bits S0 to S6 make up a 7-bit number between 0 and 127. Sense current is when SDB = 0
30 S 1+()×

and when SDB = 1 (R

---------------------------------

128

mA

= 430 Ω).

ref

15 S 1+()×

--------------------------------­128

mA

Status

A status byte, located at address FF, contains the following status bits:

Table 16 Status byte settings

ADDRESS D7 D6 D5 D4 D3 D2 D1 D0

FF AG3

(1)

AG2

(1)

AG1

(1)

AG0

(1)

DN

(2)

PF5

(3)

WUS

(4)

PF12

(5)

Notes

1. Actual gain. Allows the gain to be determined while the AGC is on.

2. This bit can be used for microcontroller gain control, with the AGC off (see Table 17).

3. Power failure detected on the +5 V supply (V

DD1

).

4. Write unsafe detected: head open or short circuited.

5. Power failure detected on the +12 V supply (V

DD3

).

Table 17 Sense current range select.

DN GAIN

0 can be increased
1 can be decreased

1998 Mar 17 12

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DD1

V

DD2

V

DD3

I

DD1

I

DD2

I

DD3

I

I(n)

P

tot

T

amb

T

j

T

stg

V

ES(HB)

V

ES(MM)

read circuit supply voltage −0.3 +5.5 V
FB and write circuit supply voltage −0.3 +5.5 V
sense current circuit supply voltage −0.3 +13.2 V
read circuit supply current − 150 mA
FB and write circuit supply current − 35 mA
sense current circuit supply current − 35 mA
input current on remaining pins −10 +10 mA
maximum total power dissipation − 1000 mW
ambient temperature 0 +70 °C
junction temperature note 1 0 +135 °C
storage temperature −50 +150 °C
electrostatic handling: human body model note 2 −1000 +1000 V
electrostatic handling: machine model note 3 −200 +200 V

Notes

1. Maximum permissible ambient temperature is dependent on internal dissipation. T
T

=(R

j

th(j-a)

× P

tot

)+T

, where P

amb

is the total dissipation in the package.

tot

is the discriminating factor.

j

2. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.

3. Equivalent to discharging a 200 pF capacitor through a 25 Ω series resistor and a 2.5 µH series inductance.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 66 K/W

QUALITY SPECIFICATION

In accordance with “

SNW-FQ-611E

”.

1998 Mar 17 13

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

CHARACTERISTICS

V

DD1=VDD2

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD1

V

DD2

V

DD3

I

DD1

I

DD2

I

DD3

V

ref

I

20

V

21

I

ref

Read section

G

v(pa)

G

v(agc)

∆G

v(agc)

G

v(yoke)

f

coupling

f

−3dB(cutoff)(HPF)

f

−3dB(cutoff)(LPF)

V

n(i)(eq)(preamp)

=5V±5%; V

=12V±5%; T

DD3

=25°C±5%; unless otherwise specified.

amb

read circuit supply voltage 4.5 5.0 5.5 V
FB and write circuit supply

4.5 5.0 5.5 V

voltage
sense current circuit supply

10.8 12.0 13.2 V

voltage
read circuit supply current

Rd I
Wr I

= −10 to +10 mA − 31 − mA

bias

=30mA − 70 − mA

write

FB and write circuit supply
current

Rd max gain − 38 − mA
Wr − 36 − mA

sense current circuit supply

I

= 16 mA 15.0 16.2 19.0 mA

sense

current
reference voltage pin 20; IO= 0 to 3 mA 1.9 2.0 2.1 V
current on pin 20 (V

ref

)
source −−3.0 mA
sink −−50 µA

voltage at pin 21 (I

) 1.2 1.3 1.4 V

ref

reference current (pin 21) 1 3 5 mA

preamplifier voltage gain PG1 = 1; PG0 = 1 37 38.6 41 dB

PG1 = 0; PG0 = 1 32 32.7 34 dB
PG1 = 1; PG0 = 0 3 4.1 6 dB

AGC amplifier voltage gain G6DB = 1; G = 15;

23 24.4 26 dB

note 1

AGC voltage gain control

note 2 − 22 − dB

range
yoke amplifier voltage gain 19 21 23 dB

−3 dB AC coupling frequency input to output 2 5 10 kHz
HPF −3 dB cut-off frequency FC1 = FC1 = 0 − 1.0 − MHz

FC1 = 0; FC1 = 1 − 2.0 − MHz
FC1 = 1; FC1 = 0 − 4.7 − MHz
FC1 =FC1 = 1 − 10 − MHz

LPF −3 dB cut-off frequency FC1 = FC1 = 0 − 1.1 − MHz

FC1 = 0; FC1 = 1 − 2 − MHz
FC1 = 1; FC1 = 0 − 4.3 − MHz
FC1 =FC1 = 1 − 11 − MHz

equivalent input noise voltage:

Z

=0Ω−0.65 0.8 nV/√Hz

source

preamplifier

1998 Mar 17 14

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Z

i

V

I(6,7)

THD total harmonic distortion at 34 and 40 dB gain

G

v(servo)

V

n(i)(eq)(servo)

V

I(1,3))

I

sense

I

sense(max)

∆V

VDD3-ISENSE

RES

DAC(SENSE)

Z

o(sense)

G

v(FB)

B

(-3dB)

f

coupling(FBamp)

I

bias

V

O(23,24)

∆V

BIASA-BIASB

RES

DAC(BIAS)

V

O(18,19)

∆V

OO(18,19)

V

o(rms)(18,19)

I

o

V

O(AGCL)

V

O(AGCH)

input impedance 1 1.84 4 kΩ
DC input voltage; pins 6 and 7 1.2 1.3 1.4 V

−−−40 dB

settings; V

o(p-p)

=1V
servo preamplifier voltage gain WX-WY to output 62 66 70 dB
equivalent input noise voltage:

Z

=0Ω−1.8 2.8 nV/√Hz

source

servo pre-amp
DC input voltage pins 1 and 3 2.4 2.5 2.6 V
sense current R

= 430 Ω; S = 64;

ref

14.6 15.2 15.8 mA

note 3
maximum sense current all conditions; note 4 33 −−mA
voltage difference between

V

and ISENSE

DD3

1.6 − 13.2 V

(pins 9 and 8)
sense DAC resolution − 7 − bits
output impedance of sense

current source

f = 1 kHz;

I

=16mA

o(sen)

10 −−kΩ

FB amplifier voltage gain 11.5 13 14.5 dB

−3 dB bandwidth of FB

− 5 − MHz

amplifier

−3 dB AC coupling of FB

− 3 − kHz

amplifier
bias current amplitude

(peak-to-peak)

ENFB1 = 0; ENFB0 = 1 −10 − +10 mA

ENFB1 = 1; ENFB0 = 0 0 − +9 mA

ENFB1 = ENFB0 = 1 −10 − +20 mA
DC voltage level of FB outputs

B = 0; see Table 3 1.6 1.8 2.0 V
(pins 23 and 24)

voltage difference between
BIASA and BIASB

B = 31; see Table 3;

bias load 88 Ω

1.4 1.52 1.6 V

(pins 23 and 24) at maximum
DC bias voltage

bias DAC resolution − 5 − bits
read amplifier DC output

2.4 2.5 2.6 V

voltage (pins 18 and 19)
read amplifier DC offset

−−100 mV
voltage (voltage change at
pins 18 and 19)

output voltage (RMS value;

−−0.5 V
pins 18 and 19)

guaranteed output current 1.5 −−mA
lower AGC detection voltage

2.15 2.2 2.25 V
level at OUTB

upper AGC detection voltage

2.75 2.8 2.85 V
level at OUTB

1998 Mar 17 15

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

hys(AGC)

B

AGC

f

clk

Write section

I

write

I

write(max)

∆I

write

t

t(iwrite)(Rload)

V

o(p-p)(1,3)

t

R-W

t

W-R

∆t

WD

t

WDIH

t

WDIL

R

det(WUS)

Notes

1. G is a 4-bit number contained in control bits G0 to G3 (see Table 12).

2. 6 dB step via a fixed setting, and 16 dB (in 1 dB steps) via AGC control.

3. S is a 7-bit number contained in control bits S0 to S6 (see Table 15).

4. The TZA1000 is guaranteed to operate reliably with sense currents of up to 33 mA.

5. The operational clock frequency (pin 15) must be >16 times higher the SCLK frequency to ensure reliable serial
transfer.

6. W is a 7-bit number contained in control bits W0 to W6 (see Table 14). A more accurate calculation of the write
current would be given by: I
write current.

7. The TZA1000 is guaranteed to supply a write current of up to 60 mA.

8. 10 to 90% of a total current reversal.

9. Difference between negative-to-positive and positive-to-negative current slopes.

hysteresis in AGC detection

65 75 85 mV

level
AGC bandwidth − 1.5 − MHz
operational clock note 5 0 24 24 MHz

write current R

R

head
ref

=10Ω;

= 430Ω;

27.3 28.8 30.3 mA

0-peak; W = 32; note 6
maximum write current R
difference between positive

=10Ω; note 7 60 80 − mA

head

I

=30mA; − 05%

write

and negative write currents
write current transition time note 8

resistive load resistive load, 10 Ω− 4 − ns
head load R

output voltage swing

L

head

head

=10Ω;

= 200 nH

− 612ns

3 −−V

(peak-to-peak value)
read to write time − 0.2 −µs
write to read time − 10 −µs
WD pulse asymmetry in WDI mode; note 9 − 01ns
WDI pulse time HIGH 5 −−ns
WDI pulse time LOW 5 −−ns
WUS detection

resistance level

c=It

−0.003 × I

short circuited to VDD or

VSS; I

open; I

2

, where It= 125 (W + 1) / 128, Itthe target current and Ic the

t

=30mA

write

=30mA 150 −−Ω

write

−−10 Ω

1998 Mar 17 16

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

EQUIVALENT PIN CIRCUITS

PIN DESCRIPTION EQUIVALENT PIN CIRCUIT

1 write output stage

V

DD

1

WX

MGG662

3 write output stage

1,3,20 servo input configuration

6,7,20 input configuration

V

DD

3

WY

MGG663

1 3

WX WY

700 Ω 700 Ω

2.5 V
20

V

ref

6 7

INA INB

1.4 V
V

ref

5 kΩ 5 kΩ

20

MGG664

8 sense output configuration

1998 Mar 17 17

12 V

MGG666

50 Ω

8

MGG665

ISENSE

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

PIN DESCRIPTION EQUIVALENT PIN CIRCUIT

10 digital input configuration

SCLK

10

MGG667

V

DD

11 digital input configuration

13 digital input configuration

14 digital input configuration

SDEN

MGG668

HOLD

WGATE

11

MGG669

14

MGG670

V

DD

V

DD

13

V

DD

15 digital input configuration

1998 Mar 17 18

CLK

MGG671

V

DD

15

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

PIN DESCRIPTION EQUIVALENT PIN CIRCUIT

18 output configuration

2.3
mA

V

DD

25 Ω

18

OUTB
DC: 2.5 V

MGG672

19 output configuration

20 V

output configuration

ref

22 reset output configuration

2.3

mA

V

DD

25 Ω

19

OUTA
DC: 2.5 V

MGG673

V

DD

50 Ω

V

20

ref

6 kΩ

MGG674

V

DD

1998 Mar 17 19

22

18 kΩ

RESET

MGG675

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

PACKAGE OUTLINE

SO24: plastic small outline package; 24 leads; body width 7.5 mm

D

c

y

Z

24

pin 1 index

1

e

13

12

w M

b

p

SOT137-1

E

H

E

Q

A

2

A

1

L

p

L

detail X

(A )

A

X

v M

A

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT137-1

A

max.

2.65

0.10

A1A2A

0.30

2.45

0.10

2.25

0.012

0.096

0.004

0.089

IEC JEDEC EIAJ

075E05 MS-013AD

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

15.6

7.6

7.4

0.30

0.29

1.27

0.050

15.2

0.61

0.60

REFERENCES

1998 Mar 17 20

eHELLpQ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

8

0.004

ISSUE DATE

0.035

0.016

95-01-24
97-05-22

0

o
o

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

(order code 9398 652 90011).

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Mar 17 21

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Mar 17 22

Philips Semiconductors Preliminary specification

QIC read-write amplifier TZA1000

NOTES

1998 Mar 17 23

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax.[phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str.6,

220050 MINSK, Tel.[phone],Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 JamesBourchier Blvd., 1407SOFIA,
Tel. [phone], Fax.[phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 HongKong Industrial Technology Centre,
72 TatChee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone],Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard80, PB 1919, DK-2300COPENHAGEN S,

Tel. [phone], Fax.[phone]
Finland: Sinikalliontie 3, FIN-02630ESPOO,

Tel. [phone],Fax. [phone]
France: 51 RueCarnot, BP317, 92156 SURESNES Cedex,

Tel. [phone],Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097HAMBURG,

Tel. [phone],Fax. [phone]
Greece: No. 15,25th MarchStreet, GR 17778TAVROS/ATHENS,

Tel. [phone], Fax.[phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr.Annie BesantRoad, Worli, MUMBAI 400025,
Tel. [phone], Fax.[phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax.[phone]
Israel: RAPAC Electronics, 7Kehilat SalonikiSt, PO Box 18053,

TEL AVIV61180, Tel. [phone], Fax.[phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone],Fax. [phone]
Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO108,

Tel. [phone], Fax.[phone]
Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax.[phone]
Malaysia: No. 76Jalan Universiti, 46200PETALING JAYA, SELANGOR,

Tel. [phone],Fax. [phone]
Mexico: 5900 GatewayEast, Suite 200, ELPASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,

Tel. [phone], Fax.[phone]
New Zealand: 2 WagenerPlace, C.P.O. Box1041, AUCKLAND,

Tel. [phone], Fax.[phone]
Norway: Box 1, Manglerud0612, OSLO,

Tel. [phone], Fax.[phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 ValeroSt. SalcedoVillage, P.O. Box2108 MCC,MAKATI,
Metro MANILA, Tel.[phone],Fax. [phone]

Poland: Ul. Lukiska10, PL 04-123WARSZAWA,
Tel. [phone], Fax.[phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]
Singapore: Lorong 1, ToaPayoh, SINGAPORE 1231,

Tel. [phone],Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O.Box 7430 Johannesburg2000,
Tel. [phone], Fax.[phone]

South America: Al. Vicente Pinzon,173, 6th floor,
04547-130 SÃOPAULO, SP, Brazil,
Tel. [phone], Fax.[phone]

Spain: Balmes 22, 08007BARCELONA,
Tel. [phone], Fax.[phone]

Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM,
Tel. [phone], Fax.[phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax.[phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N.Rd., Sec.1,
TAIPEI, Taiwan Tel. [phone], Fax.[phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-BangnaRoad Prakanong, BANGKOK10260,
Tel. [phone], Fax.[phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax.[phone]

Ukraine: PHILIPS UKRAINE, 4 PatriceLumumba str., Building B, Floor7,
252042 KIEV, Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB35BX, Tel. [phone], Fax.[phone]

United States: 811 EastArques Avenue, SUNNYVALE, CA94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications,Building BE-p, P.O.Box 218,
5600 MDEINDHOVEN, The Netherlands,Fax. [phone]

© Philips Electronics N.V. 1998 SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 545102/00/02/pp24 Date of release: 1998 Mar 17 Document order number: 9397 750 03524