Datasheet TZA3001U, TZA3001BHL Datasheet (Philips)

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Page 1

INTEGRATED CIRCUITS

DATA SH EET

TZA3001AHL; TZA3001BHL; TZA3001U

SDH/SONET STM4/OC12 laser drivers

Objective speciﬁcation File under Integrated Circuits, IC19

1997 Sep 08

Page 2

Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

FEATURES

• 622 Mbits/s data input, both Current-Mode Logic (CML) and Positive Emitter-Coupled Logic (PECL) compatible (800 mV peak-to-peak maximum)

• Adaptive laser output control, stabilizing optical ONE and ZERO levels

• Optional external (non-adaptive) control of laser modulation and biasing currents

• Automatic Laser Shutdown (ALS)

• Few external components required

• Rise and fall times typically 120 ps

• Jitter <50 mUI peak-to-peak

• RF output current sinking capability of 60 mA

• Bias current sinking capability of 90 mA

• Power dissipation typically 475 mW

• Low cost LQFP32 plastic package

• Single 5 V power supply.

TZA3001AHL

• Laser alarm output for signalling extremely low and high bias current conditions.

TZA3001AHL;

TZA3001BHL; TZA3001U

TZA3001U

• Naked die version with combined bias alarm and loop mode functionality.

DESCRIPTION

The TZA3001AHL, TZA3001BHL and TZA3001U are fully integrated laser drivers for STM4/OC12 (622 Mbits/s) systems, incorporating the RF path between the data multiplexer and the laser diode. Since the bias and modulation control circuits are integrated on the IC, the external component count is low (only decoupling capacitors and adjustment resistors are required).

The TZA3001AHL features an alarm function for signalling extreme bias current conditions. The alarm low and high threshold levels can be adjusted to suit the application using only a resistor. An additional RF data input is provided with the TZA3001BHL to facilitate remote (loop mode) system testing.

The TZA3001U is a naked die version for use in compact laser module designs. The die contains 40 pads and features the combined functionality of the TZA3001AHL and TZA3001BHL.

TZA3001BHL

• Loop mode for testing STM4 622 Mbits/s optical interfaces; CML and PECL compatible.

ORDERING INFORMATION

TYPE

NUMBER

TZA3001AHL LQFP32 TZA3001BHL LQFP32 TZA3001U − naked die; 2000 × 2000 × 380 µm −

NAME DESCRIPTION VERSION

plastic low proﬁle quad ﬂat package; 32 leads; body 5 × 5 × 1.4 mm plastic low proﬁle quad ﬂat package; 32 leads; body 5 × 5 × 1.4 mm

APPLICATIONS

• SDH/SONET STM4/OC12 optical transmission systems

• SDH/SONET STM4/OC12 optical laser modules.

PACKAGE

SOT401-1 SOT401-1

1997 Sep 08 2

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

BLOCK DIAGRAMS

handbook, full pagewidth

DIN

DINQ

TZA3001AHL; TZA3001BHL;

ALARMLO

28 29

ALARM

data input

(differential)

TONE

TZA3001AHL

19, 20

27, 30

411

CC(R)

CC(G)

CC(B)

ALS

ALARMHITZERO

215

LASER

CONTROL

BLOCK

CURRENT

SWITCH

BAND GAP

REFERENCE

1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32

GND

MGK271

MONIN

ONE

ZERO

LAQ

BIAS

BGAP

TZA3001U

handbook, full pagewidth

DIN

DINQ

DLOOP

DLOOPQ

Fig.1 Block diagram: TZA3001AHL.

TONE

CC(B)

TZERO

ALS

LASER

CONTROL

BLOCK

CURRENT

SWITCH

BAND GAP

REFERENCE

1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32

GND

22 23

13 12 15

MGK270

MONIN ONE ZERO

LA LAQ BIAS

BGAP

ENL

26 5

28 29

19 20

MUX

TZA3001BHL

18, 21

27, 30

411

CC(R)

CC(G)

Fig.2 Block diagram: TZA3001BHL.

1997 Sep 08 3

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

PINNING TZA3001AHL

SYMBOL PIN DESCRIPTION

GND 1 ground MONIN 2 monitor photo diode current input GND 3 ground TONE 4 connection for external capacitor

used to set optical ONE control loop time constant (optional)

TZERO 5 connection for external capacitor

used to set optical ZERO control loop time constant (optional)

BGAP 6 connection for external band gap

decoupling capacitor

CC(G)

GND 8 ground GND 9 ground V

CC(B)

GND 11 ground LAQ 12 inverted laser modulation output LA 13 laser modulation output GND 14 ground BIAS 15 laser bias current output GND 16 ground GND 17 ground ALARMHI 18 maximum bias current alarm

CC(R)

ALARMLO 21 minimum bias current alarm

ONE 22 optical ONE reference level input ZERO 23 optical ZERO reference level

GND 24 ground GND 25 ground ALARM 26 alarm output V

CC(R)

DIN 28 data input DINQ 29 inverted data input V

CC(R)

ALS 31 automatic laser shutdown input GND 32 ground

7 supply voltage; note 1

10 supply voltage; note 1

reference level input 19 supply voltage; note 1 20 supply voltage; note 1

reference level input

input

27 supply voltage; note 1

30 supply voltage; note 1

TZA3001AHL; TZA3001BHL;

TZA3001U

TZA3001BHL

SYMBOL PIN DESCRIPTION

GND 1 ground MONIN 2 monitor photo diode current input GND 3 ground TONE 4 connection for external capacitor

used to set optical ONE control loop time constant (optional)

TZERO 5 connection for external capacitor

used to set optical ZERO control loop time constant (optional)

BGAP 6 connection for external band gap

decoupling capacitor

CC(G)

GND 8 ground GND 9 ground V

CC(B)

GND 11 ground LAQ 12 inverted laser modulation output LA 13 laser modulation output GND 14 ground BIAS 15 laser bias current output GND 16 ground GND 17 ground V

CC(R)

DLOOP 19 loop mode data input DLOOPQ 20 loop mode inverted data input V

CC(R)

ONE 22 optical ONE reference level input ZERO 23 optical ZERO reference level input GND 24 ground GND 25 ground ENL 26 loop mode enable input V

CC(R)

DIN 28 data input DINQ 29 inverted data input V

CC(R)

ALS 31 automatic laser shutdown input GND 32 ground

Note to Tables TZA3001AHL and TZA3001BHL

1. See Section “Power supply connections”.

7 supply voltage; note 1

10 supply voltage; note 1

18 supply voltage; note 1

21 supply voltage; note 1

27 supply voltage; note 1

30 supply voltage; note 1

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SDH/SONET STM4/OC12 laser drivers

handbook, full pagewidth

GND

MONIN

GND

TONE

TZERO

BGAP

CC(G)

GND

TZA3001AHL; TZA3001BHL;

TZA3001U

CC(R)

ALS

GND 32

1 2 3 4 5 6 7 8

GND

TZA3001AHL

GND

CC(B)

DINQ 29

LAQ

DIN

CC(R)

GND

ALARM 26

BIAS

GND 25

GND

24 23 22 21 20 19 18 17

MGK273

GND ZERO ONE ALARMLO V

CC(R)

ALARMHI GND

handbook, full pagewidth

GND

MONIN

GND

TONE

TZERO

BGAP

CC(G)

GND

Fig.3 Pin configuration: TZA3001AHL.

CC(R)

ALS

GND 32

1 2 3 4 5 6 7 8

GND

TZA3001BHL

GND

CC(B)

DINQ 29

LAQ

DIN 28

13 LA

CC(R)

GND

ENL 26

BIAS

GND 25

GND

24 23 22 21 20 19 18 17

MGK272

GND ZERO ONE V

CC(R)

DLOOPQ DLOOP V

CC(R)

GND

Fig.4 Pin configuration: TZA3001BHL.

1997 Sep 08 5

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

TZA3001AHL; TZA3001BHL;

TZA3001U

PAD CONFIGURATION TZA3001U (naked die)

COORDINATES

SYMBOL PAD DESCRIPTION

GND 1 ground −664 −910 MONIN 2 monitor photo diode current input −524 −910 GND 3 ground −367 −910 IGM 4 not used (leave unbonded) −227 −910 TONE 5 connection for external capacitor to set optical ONE control loop time

−70 −910

constant (optional)

TZERO 6 connection for external capacitor to set optical ZERO control loop time

+87 −910

constant (optional) BGAP 7 connection for external band gap decoupling capacitor +244 −910 V

CC(G)

8 supply voltage +384 −910

9 supply voltage +524 −910 GND 10 ground +664 −910 GND 11 ground +910 −630 V V

CC(B) CC(B)

12 supply voltage +910 −490

13 supply voltage +910 −350 GND 14 ground +910 −210 LAQ 15 inverted laser modulation output +910 −70 LA 16 laser modulation output +910 +70 GND 17 ground +910 +210 BIAS 18 laser bias current output +910 +350 GND 19 ground +910 +490 GND 20 ground +910 +630 GND 21 ground +681 +910 ALARMHI 22 maximum bias current alarm reference level input +541 +910 V

CC(R)

23 supply voltage +384 +910 DLOOP 24 loop mode data input +227 +910 DLOOPQ 25 loop mode inverted data input +87 +910 V

CC(R)

26 supply voltage −70 +910 ALARMLO 27 minimum bias current reference level input −210 +910 ONE 28 optical ONE reference level input −367 +910 ZERO 29 optical ZERO reference level input −524 +910 GND 30 ground −681 +910 GND 31 ground −910 +681 ALARM 32 alarm output −910 +541 ENL 26 loop mode enable input −910 +384 V

CC(R)

34 supply voltage −910 +227 DIN 35 data input −910 +70

(1)

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

TZA3001AHL; TZA3001BHL;

TZA3001U

COORDINATES

SYMBOL PAD DESCRIPTION

DINQ 36 inverted data input −910 −70 V

CC(R)

37 supply voltage −910 −227 ALS 38 automatic laser shutdown input −910 −367 GND 39 ground −910 −551 GND 40 ground −910 −664

Note

1. Coordinates represent the position of the centre of the pad, in µm with respect to the centre of the die.

handbook, full pagewidth

GND

ZERO

ONE

ALARMLO

2 mm

CC(R)

(1)

DLOOPQ

DLOOP

CC(R)

GND

ALARMHI

(1)

30 29 28 27 26 21

GND

ALARM

ENL

CC(R)

DIN

DINQ

CC(R)

ALS GND GND

(1) Typical value. Pad size: 90 ×90 µm. Chip area: 4 square mm. The numbers in the small squares refer to the pad numbers.

31 32 33 34 35 36 37 38 39 40

1 2 3 4 5 109876

GND

MONIN

GND

TZA3001U

IGM

TONE

TZERO

BGAP

CC(G)

22232425

CC(G)

20 19 18 17 16 15 14 13 12 11

GND

GND GND BIAS GND LA LAQ GND

CC(B)

GND

2 mm

MGL192

(1)

Fig.5 Bonding pad locations: TZA3001U.

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

FUNCTIONAL DESCRIPTION

The TZA3001AHL, TZA3001BHL and TZA3001U laser drivers accept a 622 Mbits/s STM4 input data stream (CML or PECL compatible) and generate an output signal with sufficient current to drive a solid state laser. They also contain control circuitry for stabilizing the laser optical power levels representing logic 1 and logic 0.

The input buffers present a high impedance to the data stream on the DIN and DINQ differential inputs. The input signal can be CML (approximately 200 mV peak-to-peak below the supply voltage) or PECL (up to 800 mV peak-to-peak) compatible. The input can be configured to accept CML signals by connecting external 50 Ω pull-up resistors to V usual Thevenin termination can be applied. For ECL signals (negative to ground), the inputs should be AC-coupled to the signal source.

The differential amplifier contains a preamplifier and a main amplifier. The main amplifier is designed to handle the large peak currents required at the output laser driving stage and is insensitive to supply voltage variations. The output signal from the main amplifier drives a current switch which supplies a maximum modulation current of 60 mA through outputs LA and LAQ. The BIAS pin delivers a bias current of up to 90 mA DC for adjusting the laser output to a level above its light emitting threshold.

Automatic laser control

A laser with a Monitor Photo Diode (MPD) is required for the laser control circuit. The MPD current, which is proportional to the laser emission, is fed into the MONIN pin (current range is 100 to 1000 µA peak-to-peak). The input buffer is optimized to cope with MPD capacitances up to 50 pF. To prevent the input buffer breaking into oscillation with a low capacitance MPD, it is advisable to increase the capacitance to at least the minimum specified value (see Chapter “Characteristics”), by connecting extra capacitance to the MONIN pin.

DC reference currents are applied to pins ZERO and ONE to set the MPD reference levels for laser LOW and laser HIGH. A resistor between V the voltage on the ZERO and ONE pins is held constant at a level 1.5 V below V to pin ZERO is multiplied by 4, the reference current flowing into pin ONE is multiplied internally by 16.

The reference current and resistor for the optical ONE regulation loop (modulation current control) can be calculated using the following formulae:

. If PECL compatibility is required, the

CC(R)

and the pin is sufficient;

CC(R)

. The reference current applied

CC(R)

TZA3001AHL; TZA3001BHL;

TZA3001U

ONE

------

MPD ONE()

1.5

----------- I

ONE

---------------------------I

MPD ONE()

= I

The reference current and resistor for the optical ZERO regulation loop (bias current control) can be calculated using the following formulae:

ZERO

= I

-- -

MPD ZERO()

1.5

--------------I

ZERO

------------------------------I

MPD ZERO()

MPD(ONE)

and I

ZERO

In these formulae, I monitor photo diode current during an optical ONE and an optical ZERO, respectively.

Example: A laser is operating at optical output power levels of 0.3 mW for laser HIGH and 0.03 mW for laser LOW (extinction ratio of 10 dB). Suppose the corresponding MPD currents for this type of laser are 260 µA and 30 µA respectively. In this case, a reference

current of should flow into pin ONE.

260µA

-----------------16

16.25= µA

This can be set using a current source or simply by connecting a resistor of the appropriate value. The resistor can be connected between V example the resistor would be

ONE

1.5V

-----------------------

16.25µA

92.3kΩ==

held constant at 1.5 V below V The reference current at pin ZERO in this example should

30µA

be . Again this current should flow into

-------------- -

7.5µA=

pin ZERO and can be set using a resistor

ZERO

1.5V

----------------

7.5µA

200kΩ==

(the voltage on pin ZERO is

held constant at 1.5 V below V Note that it is the MPD current that is stabilized, rather than

the actual laser optical output power. Deviations between optical output power and MPD current, known as ‘tracking errors’, cannot be corrected for.

Designing the modulation and bias loop

The optical ONE and ZERO regulation loop time constants are determined by on-chip capacitances. If the resulting time constants are found to be too small in a specific application, they can be increased by connecting external capacitors to pins TZERO and TONE, respectively.

A[]⋅

Ω[]==

A[]⋅

Ω[]==

MPD(ZERO)

and pin ONE. In this

CC(R)

represent

(the voltage on pin ONE is

CC(R)

(1)

(2)

(3)

(4)

1997 Sep 08 8

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

The loop time constant and bandwidth can be estimated using the following formulae:

ONE



40 10



ONE

-----------------------2πτ

--------------------------------------------------------------------------------------------2π 40 10

ZERO

 

= Hz[]

The term η two terms: η

12–

⋅ C

⋅= s[]

TONE

⋅

ONE

LASER



⋅⋅⋅



40 10

⋅ C

--------------------------- 2πτ

⋅

------------------------------------------------------------------------------------------------



2π 40 10

⋅⋅⋅



LASER

, the electro-optical efficiency, and R, the

12–

⋅ C

TONE

12–

TZERO

ZERO

LASER

12–

⋅ C

TZERO

in the above formulae is the product of

monitor photo diode responsivity. η steepness of the laser slope, the amount of extra optical output power in mW per mA of modulation current. R is the responsivity of the monitor photo diode, the amount of extra monitor photo diode current in mA per mW optical output power. The product of these terms yields η which is dimensionless.

Example: A laser with an MPD has the following specifications: P R = 500 mA/W. The term I

= 1 mW, Ith=25mA,ηEO= 30 mW/A,

is the threshold current, which

is the current required to switch on the laser. If the laser operates just above threshold, it may be assumed thatη around the optical ZERO level is 50% of ηEO around the optical ONE level, due to the decreasing slope near threshold. In this example the resulting bandwidth for the optical ONE regulation loop, without external capacitance, would be:

-----------------------2πτ

⋅

ONE

30 103–500 10

⋅⋅⋅

------------------------------------------------------------- -

⋅⋅ ⋅⋅

2π40 10

12–

The resulting bandwidth for the optical ZERO regulation loop, without external capacitance, would be:

--------------------------- 2πτ

⋅

ZERO

0.530103–500 10

⋅⋅ ⋅ ⋅

-----------------------------------------------------------------2π40 10

⋅⋅ ⋅⋅

12–

It is not necessary to add additional capacitance with this type of laser.

⋅

80 10

--------------------

LASER

Hz[]

80 10

⋅

50 10

⋅= s[]

--------------------

LASER

50 10

accounts for the

3–

750 Hz≈==

80 10

3–

600 Hz≈==

50 10

LASER

(5)

(6)

(7)

(8)

TZA3001AHL; TZA3001BHL;

TZA3001U

Manual laser override

The automatic laser control function can be overridden by connecting voltage sources to TZERO and TONE to take direct control of, respectively, the bias current source and the modulation current source. The control voltages should be in the range 1.5 to 3.5 V to sweep the modulation current through the range 1 to 60 mA and the bias current through the range 1 to 90 mA. These current ranges are guaranteed. Depending on temperature and manufacturing process spread, current values higher than the specified ranges can be achieved. However, bias and modulation currents in excess of the specified range are not supported and should be avoided.

Automatic laser shut down

The laser modulation and bias currents can be rapidly switched off by means of the active HIGH ALS input (CMOS). This function allows the circuit to be shut down in the event of an optical system malfunction. A 25 kΩ pull-down resistor defaults the ALS input to the non active state.

TZA3001AHL: bias alarm

The bias current alarm circuit detects and flags whenever the bias current falls outside a predefined range. This feature can detect excessive aging and laser malfunctioning. The maximum permitted bias current should be applied to ALARMHI with an attenuation ratio of 1500, the minimum to ALARMLO with an attenuation ratio of 300.

Like the reference currents for the laser current regulation loops, the alarm reference currents can be set using external resistors between V ALARMLO. Resistor values can be calculated using the following formulae:

1.5 1500⋅

ALARMHI

ALARMLO

= Ω[]

------------------------- I

BIAS

MAX

1.5 300⋅

= Ω[]

---------------------I

BIAS

MIN

Example: The following reference currents would be required to limit the bias current range to between 6 and 90 mA:

ALARMLO

ALARMHI

6mA

------------ 300

90mA

---------------1500

20 µA==

60 µA==

and pins ALARMHI and

CC(R)

and

(9)

(10)

1997 Sep 08 9

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

The corresponding resistor values would be:

ALARMHI

ALARMLO

1.5V 1500⋅

-----------------------------90 mA

1.5V 300⋅

-------------------------- 6mA

If the alarm condition is true, the ALARM output goes HIGH (CMOS level). This signal could be used, for example, to disable the laser driver by driving the ALS input (a latch is needed in between to prevent oscillation).

TZA3001BHL: loop mode

In loop mode, the total system application can be tested. It allows for uninhibited optical transmission through the fibre front end (from the photo diode through the transimpedance stage and the data and clock recovery unit, to the laser driver and via the laser back to the fibre). Note that the optical receiver used in conjunction with theTZA3001BHL must have a loop mode output in order to complete the test loop. A HIGH on pin ENL selects loop mode. By default ENL is pulled LOW by a 25 kΩ pull-down resistor.

Power supply connections

Three separate supply domains (labelled V and V

) are used to provide isolation between the

CC(R)

high-current outputs, the PECL/CML input, and the monitor photo diode current input. The three domains should be individually filtered before being connected to a central VCC (see Fig.6). The supply levels should be equal and in accordance with the values specified in Chapter “Characteristics”. To maximize power supply isolation, the MPD cathode on the laser should be connected to V and the laser diode anode to V driver modulation output LAQ is generally not used. To properly balance the output stage, an equalization network with an impedance comparable to the laser is connected to LAQ. This network is referenced to V

25 kΩ==

and

75 kΩ==

. The inverted laser

CC(B)

, V

CC(G)

CC(B)

TZA3001AHL; TZA3001BHL;

TZA3001U

C1 1 µF

C3 1 µF

C5 1 µF

CC(B)

C2 22 nF

CC(G)

C4 22 nF

CC(R)

C6 22 nF

domains, the TZA3001U

TZA3001AHL/ TZA3001BHL/ TZA3001U

handbook, halfpage

central

Fig.6 Recommended power supply connections.

Grounding the TZA3001U naked die

In addition to the separate V naked die contains three corresponding ground domains. Isolation between the GND domains is limited due to the finite substrate conductance. Although elaborate tests have still to be done, the following grounding strategy is recommended for optimal performance.

Mount the die on a, preferably large and highly conductive, grounded die pad. All GND pads have to be bonded down to the die pad. The external ground is thus optimally combined with the die ground, avoiding ground bouncing problems.

MGL203

1997 Sep 08 10

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

TZA3001AHL; TZA3001BHL;

TZA3001U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

supply voltage −0.5 +6 V DC voltage

pin 2: MONIN 1.3 V pins 4 and 5: TONE and TZERO −0.5 V

+ 0.5 V

pin 6: BGAP −0.5 +3.2 V pin 15: BIAS −0.5 VCC+ 0.5 V pins 12 and 13: LAQ and LA 1.3 V pins 18 and 21: ALARMHI and ALARMLO (TZA3001AHL) −0.5 V pins 22 and 23: ONE and ZERO −0.5 V pins 19 and 20: data pins DLOOP and DLOOPQ (TZA3001BHL) −0.5 V pins 28 and 29: data pins DIN and DINQ −0.5 V pin 26: CMOS pin ALARM (TZA3001AHL) −0.5 V pin 26: CMOS pin ENL (TZA3001BHL) −0.5 V pin 31: CMOS pin ALS −0.5 V

DC input current

+ 0.5 V

pin 2: MONIN 0 10 mA pins 4 and 5: TONE and TZERO −10 +10 mA pin 6: BGAP −2.0 +2.5 mA pin 15: BIAS 0 200 mA pins 12 and 13: LAQ and LA 0 100 mA pins 18 and 21: ALARMHI and ALARMLO (TZA3001AHL) −10 +0.5 mA pins 22 and 23: ONE and ZERO −10 +0.5 mA pins 19 and 20: data pins DLOOP and DLOOPQ (TZA3001BHL) −10 +10 mA pins 28 and 29: data pins DIN and DINQ −10 +10 mA pin 26: CMOS pin ALARM (TZA3001AHL) −10 +10 mA pin 26: CMOS pin ENL (TZA3001BHL) −0.5 +0.5 mA pin 31: CMOS pin ALS −0.5 +0.5 mA

amb

stg

ambient temperature −40 +85 °C junction temperature −40 +125 °C storage temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R R

th(j-s) th(j-c)

thermal resistance from junction to solder point 15 K/W thermal resistance from junction to case tbf K/W

1997 Sep 08 11

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Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

TZA3001AHL; TZA3001BHL;

TZA3001U

CHARACTERISTICS

= 5 V; T

= −40 to +85 °C; all voltages with respect to GND.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V I P

tot

supply voltage 4.75 5 5.25 V supply current note 1 − 65 total power dissipation note 4 − 430

(2)

(5)

90 810

(3)

(6)

Data inputs: DIN and DINQ (DLOOP and DLOOPQ on TZA3001BHL)

V V V Z

i(p-p) IO I i

input voltage (peak-to-peak value) permitted input offset voltage −25 − +25 mV input voltage range VCC− 2000 − VCC+ 250 mV low frequency single ended input

(7)

50 Ω measurement system

100 250 800 mV

81012kΩ

impedance

CMOS inputs: ALS (ENL on TZA3001BHL)

LOW-level input voltage − 0.4 0.8 V HIGH-level input voltage 3.0 4.0 − V

CMOS output: ALARM on TZA3001AHL only

LOW-level output voltage 0 − 0.2 V HIGH-level output voltage 4.8 − 5V

Monitor photo diode input: MONIN

i(p-p)

monitor photo diode current

100 − 1000 µA

(peak-to-peak value)

C monitor photo diode capacitance 30

DC input voltage 1.5 1.8 2.0 V

(8)

− 50 pF

mA mW

Control loop reference currents: ONE and ZERO

ref(ONE)

ref(ZERO)

optical ONE reference current note 9 6 − 65 µA optical ONE reference voltage referenced to V optical ZERO reference current note 9 6 − 65 µA optical ZERO reference voltage referenced to V

Control loop time constants: TONE and TZERO

TONE

m(TONE)

TZERO

m(TZERO)

TONE voltage 1.5 − 3.5 V TONE transconductance note 10 − 50 − mA/V TZERO voltage 1.5 − 3.5 V TZERO transconductance note 11 − 80 − mA/V

Laser modulation outputs: LA and LAQ

O(ALS)

, t

LOW-level output current −−2mA HIGH-level output current 1 − 60 mA output current during ALS −−10 µA output voltage range 2 − 5V rise/fall time − 120 300 ps

1997 Sep 08 12

−1.55 −1.5 −1.45 V

CC(R)

−1.55 −1.5 −1.45 V

CC(R)

Page 13

Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

TZA3001AHL; TZA3001BHL;

TZA3001U

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

o(p-p)

intrinsic output jitter (peak-to-peak

−−50

(12)

mUI

value)

Bias current output: BIAS

O(ALS)

res(ALS)

output current 2 − 90 mA output current during ALS −−10 µA ALS response time I

BIAS

= 90 mA;

−−1µs

note 13

output voltage 1 − 5V

Alarm threshold inputs: ALARMHI and ALARMLO (TZA3001AHL only)

ref(ALARMLO)

lower alarm threshold reference

note 14 6 − 65 µA

current

ref(ALARMLO)

ref(ALARMHI)

optical ALARMLO reference voltage referenced to V higher alarm threshold reference

note 14 6 − 65 µA

−1.55 −1.5 −1.45 V

CC(R)

current

ref(ALARMHI)

optical ALARMHI reference voltage referenced to V

−1.55 −1.5 −1.45 V

CC(R)

Notes

1. ICC does not include modulation and bias current through pins LA, LAQ and BIAS.

2. Typical value for ICC refers to, but does not include, I

3. The maximum value of ICC refers to, but does not include, I

4. P

includes modulation and bias current through pins LA, LAQ and BIAS.

tot

5. The typical power dissipation is the on-chip dissipation with I V

= 1 V and typical process parameters.

BIAS

6. The maximum power dissipation is the on-chip dissipation with I V

= 1 V and worst case process parameters.

BIAS

= 30 mA and I

MOD

= 60 mA and I

= 30 mA and V

MOD

= 60 mA and V

MOD

BIAS

= 45mA.

= 90mA.

BIAS

LA/LAQ

= 2 V, I

LA/LAQ

BIAS

= 2 V, I

= 45 mA and

= 90 mA and

BIAS

7. Measured single ended.

8. A minimum value of capacitance on pin MONIN is required to prevent instability.

9. The reference currents can be set by a resistor between VCC and pin ONE or ZERO. The corresponding ZERO level MPD current range is from 24 to 260 µA. The ONE level MPD current range is from 96 to 1040 µA. See Section “Automatic laser control” for a detailed discussion.

10. The specified transconductance is the ratio of modulation current at LA and LAQ to voltage at pin TONE, under small signal conditions.

11. The specified transconductance is the ratio of biasing current at BIAS to voltage at pin TZERO, under small signal conditions.

12. Measured in a frequency band from 250 kHz to 5 MHz, according to “

ITU-T Recommendation G.813

”.

The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter.

13. The ALS response time is defined as the delay between the onset of the ALS ramp (10% of the HIGH logic level) and the extinction of the bias current (10% of the original value).

14. The reference currents can be set by using a resistor between V

and pin ALARMLO or ALARMHI.

CC(R)

The corresponding range of low-bias thresholds is between 1.8 and 19.5 mA. The high-bias threshold range is from 9 to 97.5 mA. See Section “TZA3001AHL: bias alarm” for detailed information.

1997 Sep 08 13

Page 14

Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

handbook, full pagewidth

I(max)

IQH

IQL

I(min)

Fig.7 Logic level symbol definitions for data inputs.

TZA3001AHL; TZA3001BHL;

TZA3001U

DATA INPUT

CC(R)

i (p-p)

MGK274

1997 Sep 08 14

Page 15

Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

APPLICATION INFORMATION TZA3001AHL

handbook, full pagewidth

+5 V

monitor

diode

current

(2)

(3)

(4)

22 nF

MONIN

TZERO

TONE

BGAP

(1)

+5 V

CC(G)

1, 3, 8, 9, 11,

14, 16, 17,

24, 25, 32

data inputs

(1)

CC(B)

+5 V

19, 20,

27, 30

(1)

CC(R)

normal mode

(CML/ECL compatible)

ALS

DINQ29DIN28ALARM

31710

TZA3001AHL

15 13 12

GND BIAS LA LAQ

R5 18 Ω

+5 V

TZA3001AHL; TZA3001BHL;

TZA3001U

CC(R)VCC(R)VCC(R)VCC(R)

26 23

21 18

Z1 (equalization network)

(7)

(5)

ZERO

(5)

ONE

ALARMLO ALARMHI

R2 R3 R4

(6)

(7)

+5 V

MPD

(1) A filter should be connected between the pin and the 5 V supply; see Section “Power supply connections”. (2) C1 enhances modulation control loop time constant (optional). (3) C2 enhances bias control loop time constant (optional). (4) Band gap noise filter. (5) Optical ZERO and ONE reference currents are set using resistors to V (6) Minimum and maximum bias currents are set using resistors to V (7) See Section “Power supply connections”.

CC(R)

(7)

+5 V

laser

MGK276

. See Section “Automatic laser control”.

CC(R)

. See Section “TZA3001AHL: bias alarm”.

Fig.8 Application diagram showing the TZA3001AHL configured for 622.08 Mbits/s (STM4/OC12).

1997 Sep 08 15

Page 16

Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

TZA3001BHL

handbook, full pagewidth

+5 V

monitor

diode

current

(2)

(3)

(4)

22 nF

MONIN

TZERO

TONE

BGAP

(1)

+5 V

CC(G)

1, 3, 8, 9, 11,

14, 16, 17,

24, 25, 32

data inputs

(1)

CC(B)

+5 V

18, 21,

27, 30

(1)

CC(R)

normal mode

(CML/ECL compatible)

ALS

DINQ29DIN28ENL

31710

TZA3001BHL

15 13 12

GND BIAS LA LAQ

R3 18 Ω

+5 V

(6)

TZA3001AHL; TZA3001BHL;

TZA3001U

CC(R)VCC(R)

23 22

20 19

Z1 (equalization network)

ZERO ONE

DLOOPQ DLOOP

R1 R2

(5)

loop mode inputs

(CML/ECL

compatible)

(6)

+5 V

MPD

(1) A filter should be connected between the pin and the 5 V supply; see Section “Power supply connections”. (2) C1 enhances modulation control loop time constant (optional). (3) C2 enhances bias control loop time constant (optional). (4) Band gap noise filter. (5) Optical ZERO and ONE reference currents are set using resistors to VCC. See Section “Automatic laser control”. (6) See Section “Power supply connections”.

+5 V

(6)

laser

MGK275

Fig.9 Application diagram showing the TZA3001BHL configured for 622.08 Mbits/s (STM4/OC12).

1997 Sep 08 16

Page 17

Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12

TZA3001AHL; TZA3001BHL;

laser drivers

PACKAGE OUTLINE

LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm

TZA3001U

SOT401-1

pin 1 index

DIMENSIONS (mm are the original dimensions)

max.

1.60

1A2A3bp

0.15

1.5

1.3

0.25

0.05

UNIT

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

w M

0.27

0.18

0.17

0.12

0 2.5 5 mm

(1) (1)(1)

5.1

4.9

w M

v M

scale

(1)

5.1

4.9

0.5

7.15

6.85

7.15

6.85

0.75

1.0

0.45

detail X

0.2

0.12 0.1

0.95

0.55

(A )

Zywv θ

0.95

0.55

OUTLINE

VERSION

SOT401-1

IEC JEDEC EIAJ

REFERENCES

1997 Sep 08 17

EUROPEAN

PROJECTION

ISSUE DATE

95-12-19 97-08-04

Page 18

Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

SOLDERING Introduction

There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our

“IC Package Databook”

Reﬂow soldering

Reflow soldering techniques are suitable for all LQFP packages.

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.

(order code 9398 652 90011).

TZA3001AHL; TZA3001BHL;

TZA3001U

If wave soldering cannot be avoided, for LQFP packages with a pitch (e) larger than 0.5 mm, the following conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering technique should be used.

• The footprint must be at an angle of 45° to the board

direction and must incorporate solder thieves downstream and at the side corners.

During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.

Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.

Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.

Wave soldering

Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.

CAUTION

Wave soldering is NOT applicable for all LQFP packages with a pitch (e) equal or less than 0.5 mm.

Repairing soldered joints

Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

1997 Sep 08 18

Page 19

Philips Semiconductors Objective speciﬁcation

SDH/SONET STM4/OC12 laser drivers

DEFINITIONS

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

TZA3001AHL; TZA3001BHL;

TZA3001U

1997 Sep 08 19

Page 20

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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 427027/300/01/pp20 Date of release: 1997 Sep 08 Document order number: 9397 750 01654