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®
TYNx10 Series
STANDARD
Table 1: Main Features
A
10A SCR
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
400, 600 and 800 V
DESCRIPTION
The TYNx10 Silicon Controlled Rectifiers is a high
performance glass passivated technology.
This general purpose Silicon Controlled Rectifiers
is designed for power supply up to 400Hz on resistive or inductive load.
10 A
15 mA
G
K
K
A
G
TO-220AB
Table 2: Order Codes
Part Numbers Marking
TYN410RG TYN410
A
TYN610RG TYN610
TYN810RG TYN810
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
IT
(AV)
I
TSM
I
dI/dt
I
GM
P
G(AV)
P
GM
V
DRM
V
RRM
T
T
T
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
²
tI²t Value for fusing
Critical rate of rise of on-state current
= 100 mA , dIG/dt = 0.1 A/µs
I
G
Peak gate current
Average gate power dissipation
Maximum gate power
Repetitive peak off-state voltage
stg
Storage junction temperature range
Operating junction temperature range
j
Maximum lead temperature for soldering during 10s at 2mm from case 260 °C
L
t
= 8.3 ms
p
t
= 10 ms
p
= 10 ms Tj = 25°C
t
p
t
= 20 µs Tj = 125°C
p
= 20 µs Tj = 125°C
t
p
TYN410
TYN810 800
= 100°C
T
c
T
= 100°C
c
= 25°C
T
j
T
= 125°C
j
T
= 125°C
j
T
= 125°C
j
10 A
6.4 A
105
100
50
50 A/µs
4A
1W
10 W
400
- 40 to + 150
- 40 to + 125
A
A
VTYN610 600
°C
2
S
REV. 2February 2006
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TYNx10 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Value Unit
I
GT
V
GT
V
GD
t
gt
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
t
q
VD = 12 V (D.C.) RL = 33 Ω
VD = V
VD = V
RL = 3.3 kΩ T
DRM
IG = 40 mA dIG/dt = 0.5 A/µs
DRM
IT = 100 mA Gate open
IG = 1.2 x IGT
Linear slope up to:
V
= 67 % V
D
Gate open
DRM
ITM = 20 A tp = 380 µs
V
= V
DRM
VD = 67 % V
dI
TM
RRM
DRM ITM
= 20 A VR = 25 V
/dt = 30 A/µs dVD/dt = 50 V/µs
= 110°C
j
= 110°C
T
j
Tj = 25°C
T
= 110°C
j
= 110°C
T
j
MAX. 15 mA
MAX. 1.5 V
MIN. 0.2 V
TYP. 2 µs
MAX. 30 mA
TYP. 50 mA
MIN. 200 V/µs
MAX. 1.6 V
10 µA
MAX.
2mA
TYP. 70 µs
Table 5: Thermal Resistance
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
12
10
8
6
α = 30°
4
2
0
0123456 879
Junction to case (D.C.) 2.5 °C/W
Junction to ambient 60 °C/W
Figure 2: Correlation between maximum
average power dissipation and maximum
α = 60°
α = 90°
α = 120°
I (A)
T(AV)
α = 180°
allowable temperature (T
P(W)
12
DC
360°
α
α = 180°
10
8
6
4
2
0
0 20 40 60 80 100 120 140
R = 6°C/WthR = 4°C/WthR = 2°C/W
T (°C)
amb
amb
and T
th
lead
R = 0°C/W
th
)
T (°C)
case
100
105
110
115
120
125
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