ST TYNx10 User Manual

®

TYNx10 Series

STANDARD

Table 1: Main Features

A

10A SCR

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

400, 600 and 800 V

DESCRIPTION

The TYNx10 Silicon Controlled Rectifiers is a high
performance glass passivated technology.

This general purpose Silicon Controlled Rectifiers
is designed for power supply up to 400Hz on resis­tive or inductive load.

10 A

15 mA

G

K

K

A

G

TO-220AB

Table 2: Order Codes

Part Numbers Marking

TYN410RG TYN410

A

TYN610RG TYN610
TYN810RG TYN810

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

IT

(AV)

I

TSM

I

dI/dt

I

GM

P

G(AV)

P

GM

V

DRM

V

RRM

T

T

T

RMS on-state current (180° conduction angle)

Average on-state current (180° conduction angle)

Non repetitive surge peak on-state
current

²

tI²t Value for fusing

Critical rate of rise of on-state current

= 100 mA , dIG/dt = 0.1 A/µs

I

G

Peak gate current

Average gate power dissipation

Maximum gate power

Repetitive peak off-state voltage

stg

Storage junction temperature range
Operating junction temperature range

j

Maximum lead temperature for soldering during 10s at 2mm from case 260 °C

L

t

= 8.3 ms

p

t

= 10 ms

p

= 10 ms Tj = 25°C

t

p

t

= 20 µs Tj = 125°C

p

= 20 µs Tj = 125°C

t

p

TYN410

TYN810 800

= 100°C

T

c

T

= 100°C

c

= 25°C

T

j

T

= 125°C

j

T

= 125°C

j

T

= 125°C

j

10 A

6.4 A

105

100

50

50 A/µs

4A

1W

10 W

400

- 40 to + 150

- 40 to + 125

A

A

VTYN610 600

°C

2

S

REV. 2February 2006

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TYNx10 Series

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Value Unit

I

GT

V

GT

V

GD

t

gt

I

H

I

L

dV/dt

V

TM

I

DRM

I

RRM

t

q

VD = 12 V (D.C.) RL = 33 Ω

VD = V

VD = V

RL = 3.3 kΩ T

DRM

IG = 40 mA dIG/dt = 0.5 A/µs

DRM

IT = 100 mA Gate open

IG = 1.2 x IGT

Linear slope up to:
V

= 67 % V

D

Gate open

DRM

ITM = 20 A tp = 380 µs

V

= V

DRM

VD = 67 % V
dI

TM

RRM

DRM ITM

= 20 A VR = 25 V

/dt = 30 A/µs dVD/dt = 50 V/µs

= 110°C

j

= 110°C

T

j

Tj = 25°C

T

= 110°C

j

= 110°C

T

j

MAX. 15 mA

MAX. 1.5 V

MIN. 0.2 V

TYP. 2 µs

MAX. 30 mA

TYP. 50 mA

MIN. 200 V/µs

MAX. 1.6 V

10 µA

MAX.

2mA

TYP. 70 µs

Table 5: Thermal Resistance

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

Figure 1: Maximum average power dissipation
versus average on-state current

P(W)

12

10

8

6

α = 30°

4

2

0

0123456 879

Junction to case (D.C.) 2.5 °C/W

Junction to ambient 60 °C/W

Figure 2: Correlation between maximum
average power dissipation and maximum

α = 60°

α = 90°

α = 120°

I (A)

T(AV)

α = 180°

allowable temperature (T

P(W)

12

DC

360°

α

α = 180°

10

8

6

4

2

0

0 20 40 60 80 100 120 140

R = 6°C/WthR = 4°C/WthR = 2°C/W

T (°C)

amb

amb

and T

th

lead

R = 0°C/W

th

)

T (°C)

case

100

105

110

115

120

125

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