ST TYNx10 User Manual

®

TYNx10 Series

STANDARD

Table 1: Main Features

A

10A SCR

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

400, 600 and 800 V

DESCRIPTION

The TYNx10 Silicon Controlled Rectifiers is a high
performance glass passivated technology.

This general purpose Silicon Controlled Rectifiers
is designed for power supply up to 400Hz on resis­tive or inductive load.

10 A

15 mA

G

K

K

A

G

TO-220AB

Table 2: Order Codes

Part Numbers Marking

TYN410RG TYN410

A

TYN610RG TYN610
TYN810RG TYN810

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

IT

(AV)

I

TSM

I

dI/dt

I

GM

P

G(AV)

P

GM

V

DRM

V

RRM

T

T

T

RMS on-state current (180° conduction angle)

Average on-state current (180° conduction angle)

Non repetitive surge peak on-state
current

²

tI²t Value for fusing

Critical rate of rise of on-state current

= 100 mA , dIG/dt = 0.1 A/µs

I

G

Peak gate current

Average gate power dissipation

Maximum gate power

Repetitive peak off-state voltage

stg

Storage junction temperature range
Operating junction temperature range

j

Maximum lead temperature for soldering during 10s at 2mm from case 260 °C

L

t

= 8.3 ms

p

t

= 10 ms

p

= 10 ms Tj = 25°C

t

p

t

= 20 µs Tj = 125°C

p

= 20 µs Tj = 125°C

t

p

TYN410

TYN810 800

= 100°C

T

c

T

= 100°C

c

= 25°C

T

j

T

= 125°C

j

T

= 125°C

j

T

= 125°C

j

10 A

6.4 A

105

100

50

50 A/µs

4A

1W

10 W

400

- 40 to + 150

- 40 to + 125

A

A

VTYN610 600

°C

2

S

REV. 2February 2006

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TYNx10 Series

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Value Unit

I

GT

V

GT

V

GD

t

gt

I

H

I

L

dV/dt

V

TM

I

DRM

I

RRM

t

q

VD = 12 V (D.C.) RL = 33 Ω

VD = V

VD = V

RL = 3.3 kΩ T

DRM

IG = 40 mA dIG/dt = 0.5 A/µs

DRM

IT = 100 mA Gate open

IG = 1.2 x IGT

Linear slope up to:
V

= 67 % V

D

Gate open

DRM

ITM = 20 A tp = 380 µs

V

= V

DRM

VD = 67 % V
dI

TM

RRM

DRM ITM

= 20 A VR = 25 V

/dt = 30 A/µs dVD/dt = 50 V/µs

= 110°C

j

= 110°C

T

j

Tj = 25°C

T

= 110°C

j

= 110°C

T

j

MAX. 15 mA

MAX. 1.5 V

MIN. 0.2 V

TYP. 2 µs

MAX. 30 mA

TYP. 50 mA

MIN. 200 V/µs

MAX. 1.6 V

10 µA

MAX.

2mA

TYP. 70 µs

Table 5: Thermal Resistance

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

Figure 1: Maximum average power dissipation
versus average on-state current

P(W)

12

10

8

6

α = 30°

4

2

0

0123456 879

Junction to case (D.C.) 2.5 °C/W

Junction to ambient 60 °C/W

Figure 2: Correlation between maximum
average power dissipation and maximum

α = 60°

α = 90°

α = 120°

I (A)

T(AV)

α = 180°

allowable temperature (T

P(W)

12

DC

360°

α

α = 180°

10

8

6

4

2

0

0 20 40 60 80 100 120 140

R = 6°C/WthR = 4°C/WthR = 2°C/W

T (°C)

amb

amb

and T

th

lead

R = 0°C/W

th

)

T (°C)

case

100

105

110

115

120

125

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TYNx10 Series

Figure 3: Average on-state current versus case
temperature

I (A)

T(AV)

12

10

8

6

4

2

0

0 10 20 30 40 60 70 90 110 12050 80 100 130

D.C.

= 180°

α

T (°C)

case

Figure 5: Relative variation of gate trigger
current versus junction temperature

I,I,I[T] /

GT H L j

2.5

2

1.5

1

0.5

0

I ,I ,I [T =25°C]

GT H L j

I

GT

IH& I

L

T (°C)

j

-20-30-40 0 10-10 20 4030 50 60 70 80 90 100 110

Figure 4: Relative variation of thermal
impedance versus pulse duration

K=[Z /R

th(j-c) th(j-c)

1

Z

0.1

0.01

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

th(j-c)

]

Z

th(j-a)

t (s)

p

Figure 6: Surge peak on-state current versus
number of cycles

I (A)

TSM

120

100

80

60

40

20

0

1 10 100 1000

T initial=25°C

j

Number of cycles

t =10ms

p

One cycle

Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t

TSM

22

T initial = 25°C

j

I

TSM

2

I t

t (ms)

p

2

510

I (A), I t (A s)

100

10

1

Figure 8: On-state characteristics (maximum
values)

I (A)

TM

1000

Tj=max

100

10

T =25°C

j

V (V)

1

012345

TM

T max.:

j

V =0.82V

t0

R =24m

d

Ω

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TYNx10 Series

Figure 9: Ordering Information Scheme

Standard SCR series

Voltage

4 = 400V

Current

10 = 10A

Packing mode

RG = Tube

Table 6: Product Selector

TYN 4 10 RG

Part Numbers

Voltage (xxx)

400 V 600 V 800V

TYN410RG X

TYN810RG X

Sensitivity Package

15 mA TO-220ABTYN610RG X

4/6

Figure 10: TO-220AB Package Mechanical Data

B

Ø I

L

A

I4

l3

a1

l2

b1

e

a2

C

b2

F

c2

M

c1

TYNx10 Series

DIMENSIONS

REF.

A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259

ØI 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com

.

Table 7: Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode

TYN410RG TYN410

TO-220AB 2.3 g 50 TubeTYN610RG TYN610

TYN810RG TYN810

Table 8: Revision History

Date Revision Description of Changes

Sep-2001 1A First issue.

13-Feb-2006 2

TO-220AB delivery mode changed from bulk to tube.
ECOPACK statement added.

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TYNx10 Series

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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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