ST STPIC6D595 User Manual

Features

STPIC6D595

Power logic 8-bit shift register

■ Low R

■ Eight 100 mA DMOS outputs

■ 250 mA current limit capability

■ Devices are cascadable

■ Low power consumption

■ Footprint compatible with STPIC6C595

DS(on)

: 4 Ω typ

Description

This STPIC6D595 is a monolithic, medium­voltage, low current power 8-bit shift register
designed for use in systems that require relatively
moderate load power such as LEDs.

The device contains an 8-bit serial-in, parallel-out
shift register that feeds an 8-bit D-type storage
register. Data transfers through both the shift and
storage register clock (SRCK) and the register
clock (RCK
data out the serial output (SER OUT) port on the
rising edge of SRCK. The storage register
transfers data to the output buffer when shift
register clear (CLR) is high. When CLR
input shift register is cleared. When output enable
(G

) is held high, all data in the output buffer is
held low and all drain output are off. When G is
held low, data from the storage register is
transparent to the output buffer.

Table 1. Device summary

), respectively. The device transfers

is low, the

DIP-16

SO-16 TSSOP16

When data in the output buffers is low, the DMOS
transistor outputs are off. When data is high, the
DMOS transistor outputs have sink-current
capability. The SER OUT allows for cascading of
the data from the shift register to additional
devices.

Output are low-side, open-drain DMOS
transistors with output ratings of 20 V and 120 mA
continuous sink-current capability. Each output
provides a 250 mA maximum current limit at
T

= 25 °C. The current limit decreases as the

C

junction temperature increases for additional
device protection. The device also provides up to

2.0 kV of ESD protection when tested using the
human-body model.

The STPIC6D595 is characterized for operation
over the operating case temperature range of

-40 °C to 125 °C.

Order codes Package Packaging

STPIC6D595MTR SO-16 (Tape and reel) 2500 parts per reel

STPIC6D595TTR TSSOP16 (Tape and reel) 2500 parts per reel

STPIC6D595B1R DIP-16 25 parts per tube

November 2009 Doc ID 13663 Rev 3 1/21

www.st.com

21

Contents STPIC6D595

Contents

1 Logic symbol and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.1 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.2 Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5 Typical operating circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

6 Typical performance and characteristics . . . . . . . . . . . . . . . . . . . . . . . 13

7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

2/21 Doc ID 13663 Rev 3

STPIC6D595 Logic symbol and pin configuration

1 Logic symbol and pin configuration

Figure 1. Pin configuration

Figure 2. Logic symbol

Doc ID 13663 Rev 3 3/21

Maximum rating STPIC6D595

2 Maximum rating

Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.

2.1 Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

V

T

Logic supply voltage (See Note 1)7V

CC

Logic input voltage range -0.3 to 7 V

V

I

Power DMOS drain to source voltage (See Note 2)20V

DS

Pulsed drain current, each output, all output ON

I

D

I

D

I

D

P

d

P

d

T

J

T

C

stg

T

L

= 25 °C)

(T

C

Continuous current, each output, all output ON
(TC = 25 °C)

Peak drain current single output
(TC = 25 °C) (See Note 3)

Continuous total dissipation (TC ≤ 25 °C) 1087 mW

Continuous total dissipation (TC = 125 °C) 217 mW

Operating virtual junction temperature range -40 to +150 °C

Operating case temperature range -40 to +125 °C

Storage temperature range -65 to +150 °C

Lead temperature 1.6 mm (1/16 inch) from case for 10
seconds

2.2 Thermal data

250 mA

100 mA

250 mA

260 °C

Table 3. Thermal data

Symbol Parameter Package Values Unit

R

th(JA)

4/21 Doc ID 13663 Rev 3

Thermal resistance junction-ambient

DIP-16 85

°C/WSO-16 107

TSSOP16 143

STPIC6D595 Maximum rating

2.3 Recommended operating conditions

Table 4. Recommended operating conditions

Symbol Parameter Min Max Unit

V

CC

V

V

Logic supply voltage 4.5 5.5 V

High level input voltage 0.85V

IH

Low level input voltage 0 0.15V

IL

CC

V

CC

CC

V

V

Pulse drain output current

I

DP

= 25 °C, V

(T

C

= 5 V, all outputs ON)

CC

250 mA

(see Note 3, Note 4)

t

su

t

t

W

T

Set-up time, SER IN high before SRCK ↑
(see Figure 4 and Figure 8)

Hold time, SER IN high after SRCK ↑

h

(see Figure 4, Figure 7, Figure 8)

10 ns

10 ns

Pulse duration (see Figure 8)40ns

Operating case temperature -40 125 °C

C

Doc ID 13663 Rev 3 5/21

Electrical characteristics STPIC6D595

3 Electrical characteristics

3.1 DC characteristics

VCC = 5 V, TC = 25 °C, unless otherwise specified.

Table 5. DC characteristics

Symbol Parameter Test conditions Min Typ Max Unit

V

(BR)DSX

V

V

V

I

I

I

CC

I

CC(FRQ)

I

I

DSX

Drain-to-source
breakdown voltage

Source-to-drain diode

SD

forward voltage

High level output

OH

voltage SER OUT

Low level output

OL

voltage SER OUT

High level input current VCC = 5.5 V VI = V

IH

Low level input current VCC = 5.5 V VI = 0 -1 -100 nA

IL

Logic supply current

Logic supply current at
frequency

Nominal current

N

Off-state drain current

Static drain source on

R

DS(on)

state resistance
(See Note 4, and

Note 5)

1. Not tested, specified by design

I

= 1 mA 20 V

D

= 100 mA 0.85 1.2 V

I

F

= -20 μA VCC = 4.5 V 4.4 4.49 V

I

OH

I

= -4 mA VCC = 4.5 V 4 V

OH

= 20 μA VCC = 4.5 V 1 100 mV

I

OH

I

= 4 mA VCC = 4.5 V 145 300 mV

OH

CC

V

= 5.5 V All outputs OFF

CC

or ON

= 5 MHz CL = 30 pF

f

SRCK

All outputs OFF
(See Figure 6,

V

DS(on)

(1)

)

= 0.5 VIN = I

D

TC = 85 °C
(See Note 4, Note 5, Note 6)

(1)

= 20 V VCC = 5.5 V or 0 V 0.02 1 μA

V

DS

= 20 V VCC = 5.5 V or 0 V

V

DS

= 125 °C

T

C

= 50 mA VCC = 4.5 V 3.4 4 Ω

I

D

= 50 mA VCC = 4.5 V

I

D

= 125 °C

T

C

I

= 100 mA VCC = 4.5 V 3.5 6 Ω

D

1 100 nA

23 40 μA

70 250 μA

120 200 mA

0.5 1 μA

4.8 6 Ω

6/21 Doc ID 13663 Rev 3

STPIC6D595 Electrical characteristics

3.2 Switching characteristics

V

= 5 V, TC = 25 °C, unless otherwise specified.

CC

Table 6. Switching characteristics

Symbol Parameter Test conditions Min Typ Max Unit

t

PHL

t

PLH

t

PHL-SDO

t

PLH-SDO

t

PLH-R_O

t

PHL-R_O

t

PLH-S_SO

t

PHL-S_SO

Propagation delay time, high
to low level output from G

Propagation delay time, low
to high level output from G

Propagation delay time, clock
to SDO

Propagation delay time, clock
to SDO

Propagation delay low to high
level RCK to OUT

Propagation delay high to low
level RCK to OUT

Propagation delay low to high
level SCK to SDO

Propagation delay high to low
level SCK to SDO

Rise time, drain output - 20 30 ns

t

r

Fall time, drain output - 15 20 ns

t

f

Note: 1 All voltage value are with respect to GND

2 Each power DMOS source is internally connected to GND

3 Pulse duration

4 Technique should limit T

≤

100 μs and duty cycle ≤ 2%

- TC to 10 °C maximum

J

5 These parameters are measured with voltage sensing contacts separate from the current-

carrying contacts.

6 Nominal Current is defined for a consistent comparison between devices from different

sources. It is the current that produces a voltage drop of 0.5 V at T

CL = 30 pF ID = 75 mA
(See Figure 4,

Figure 5, Figure 6,
Figure 7,)

-1930ns

-4670ns

-1925ns

-4660ns

-6290ns

-1318ns

-1420ns

-1420ns

= 85 °C.

C

Doc ID 13663 Rev 3 7/21