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STP9527
P Channel Enhancement Mode MOSFET
-10.0A
suSCRIPTION
STP9527 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, noteook power management ane ther
battery powered circuits where high-side witching.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
FEATURE
-40V/-10.0A, R
@VGS =-10V
-40V/-8.0A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
DS(ON)
@VGS = -4.5V
= 32mΩ (Typ.)
DS(ON)
= 38mΩ
DS(ON)
ORDERING INFORMATION
Part Number Package Part Marking
STP9527 SOP-8 STP9527
※ Process Code : A ~ Z ; a ~ z
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9527 2007. V1
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STP9527
P Channel Enhancement Mode MOSFET
-10.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM -30 A
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature TJ -55/150
Storgae Temperature Range T
Thermal Resistance-Junction to Ambient
TA=25℃
TA=70℃
TA=25℃
TA=70℃
-40 V
DSS
GSS
ID
IS -2.3 A
PD
-55/150
STG
θ
R
JA
Typical Unit
±
20
-10.0
-8.0
2.8
1.8
70
W
℃
℃
℃
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9527 2007. V1
V
A
/W
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STP9527
nA
P Channel Enhancement Mode MOSFET
-10.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Symbol
Condition Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
Zero Gate Voltage Drain
Current
On-State Drain Current I
Drain-source On-Resistance R
Forward Tran Conductance
V
(BR)DSS
GS(th)
GSS
I
DSS
D(on)
DS(on)
g
V
fs
VGS=0V,ID=-250uA -40
VDS=VGS,ID=-250 uA -0.8
VDS=0V,VGS=±20V
V
-2.5 V
±
100
VDS=-36V,VGS=0V -1
VDS=-36V,VGS=0V
TJ=85℃
5V,VGS=4.5 -10
DS=-
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-8A
0.032
0.038
-10
0.040
0.050
uA
VDS=-15V,ID=-5.7A 13 S
A
Ω
Diode Forward Voltage VSD IS=-2.3A,VGS=0V -0.8 -1.2 V
Dynamic
Total Gate Charge Qg 13 20
Gate-Source Charge Qgs 4.5
Gate-Drain Charge Qgd
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Ciss 1100
Coss 145
Crss
VDS=-20V,VGS=-4.5
≡
I
-5.0A
D
VDS =-20V,VGS=0V
f=1MHz
6.5
115
nC
pF
t
Turn-On Time
Turn-Off Time
d(on)
tr
t
d(off)
tf
VDD=20V,RL=4Ω
ID=-5.0A,V
GEN
=-4.5
RG=1Ω
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
40 80
55 100
nS
30 60
12 20
Copyright © 2007, Stanson Corp.
STP9527 2007. V1
Page 4
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9527 2007. V1
Page 5
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9527 2007. V1
Page 6
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9527 2007. V1
Page 7
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9527 2007. V1
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