Datasheet STGIPS10K60A Datasheet (ST)

SLLIMM™ (small low-loss intelligent molded module)

IPM, 3-phase inverter - 10 A, 600 V short-circuit rugged IGBT

Features

■ IPM 10 A, 600 V, 3-phase IGBT inverter bridge

including control ICs for gate driving and free­wheeling diodes

■ Short-circuit rugged IGBT

■ V

■ 3.3 V, 5 V, 15 V CMOS/TTL inputs

comparators with hysteresis and pull down
resistor

■ Under-voltage lockout

■ Internal bootstrap diode

■ Interlocking function

■ DBC substrate leading to low thermal

resistance

■ Isolation rating of 2500 Vrms/min.

■ 5 kΩ NTC thermistor for temperature control

negative temperature coefficient

CE(sat)

STGIPS10K60A

SDIP-25L

Applications

■ 3-phase inverters for motor drives

■ Home appliances, such as washing machines,

refrigerators, air conditioners

Description

This intelligent power module provides a
compact, high performance AC motor drive in a
simple, rugged design. Combining ST proprietary
control ICs with the most advanced short-circuit­rugged IGBT system technology, this device is
ideal for 3-phase inverters in applications such as
home appliances and air conditioners. SLLIMM™
is a trademark of STMicroelectronics.

Table 1. Device summary

Order code Marking Package Packaging

STGIPS10K60A GIPS10K60A SDIP-25L Tube

November 2011 Doc ID 15587 Rev 8 1/18

www.st.com

18

Contents STGIPS10K60A

Contents

1 Internal block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . 3

2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3.1 Control part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

3.1.1 NTC thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Applications information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

4.1 Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 Doc ID 15587 Rev 8

STGIPS10K60A Internal block diagram and pin configuration

LIN

HIN HVG

OUT

LVG

GND

LIN

HIN HVG

OUT

LVG

GND

LIN

HIN
V

CC

V

boot

HVG

OUT

LVG

GND

L IN

W

OU T

U

V

boot W

V

HIN

W

L IN

U

GN D

N

W

L IN

V

V

boot U

HIN

U

V

boot V

OU T

W

HIN

V

P

U

OU T

V

W

V

CC

T

1

N

V

N

U

T

2

NTC

P

P

Pinin 16

P

in 1

Pin 17

Pinin 25

V

boot

V

CC

V

CC

V

boot

AM09364v1

1 Internal block diagram and pin configuration

Figure 1. Internal block diagram

in

boot

boot

boot

boot

boot

boot

AM09364v1

Doc ID 15587 Rev 8 3/18

Internal block diagram and pin configuration STGIPS10K60A

Table 2. Pin description

Pin Symbol Description

1OUT

2V

3LIN

4HIN

5V

6OUT

7V

U

boot U

U

U

CC

V

boot V

High side reference output for U phase

Bootstrap voltage for U phase

Low side logic input for U phase

High side logic input for U phase

Low voltage power supply

High side reference output for V phase

Bootstrap voltage for V phase

8 GND Ground

9LIN

10 HIN

11 OUT

12 V

13 LIN

14 HIN

15 T

16 T

17 N

V

V

W

boot W

W

W

1

2

W

Low side logic input for V phase

High side logic input for V phase

High side reference output for W phase

Bootstrap voltage for W phase

Low side logic input for W phase

High side logic input for W phase

NTC thermistor terminal 1

NTC thermistor terminal 2

Negative DC input for W phase

18 W W phase output

19 P Positive DC input

20 N

V

Negative DC input for V phase

21 V V phase output

22 P Positive DC input

23 N

U

Negative DC input for U phase

24 U U phase output

25 P Positive DC input

Figure 2. Pin layout (bottom view)

4/18 Doc ID 15587 Rev 8

STGIPS10K60A Electrical ratings

2 Electrical ratings

2.1 Absolute maximum ratings

Table 3. Inverter part

Symbol Parameter Value Unit

V

V

PN(surge)

V

CES

± I

± I

CP

P

TOT

t

scw

1. Applied between HIN

Supply voltage applied between P - NU, NV, N

PN

W

Supply voltage (surge) applied between P - NU,

, N

N

V

W

Each IGBT collector emitter voltage (V

Each IGBT continuous collector current at

(2)

C

(3)

= 25°C

T

C

Each IGBT pulsed collector current 20 A

(1)

= 0)

IN

450 V

500 V

600 V

10 A

Each IGBT total dissipation at TC = 25°C 33 W

Short-circuit withstand time, VCE = 0.5 V

= 125 °C, VCC = V

T

j

, LINi and GND for i = U, V, W.

i

= 15 V, V

boot

IN

(1)

= 5 V

(BR)CES

5µs

2. Calculated according to the iterative formula:

ICTC()

-------------------------------------------------------------------------------------------------------=

R

thj c–

T

V

CE sat()max()Tjmax()ICTC

–

jmax()TC

(),()×

3. Pulse width limited by max junction temperature.

Table 4. Control part

Symbol Parameter Value Unit

V

OUT

V

V

boot

V

dV

out

Output voltage applied between OUT
OUTW - GND (VCC = 15 V)

Low voltage power supply -0.3 to +18 V

CC

Bootstrap voltage applied between V
for i = U, V, W

Logic input voltage applied between HINi, LIN

IN

and GND for i = U, V, W

/dt Allowed output slew rate 50 V/ns

U,

boot i

OUT

- OUTi

V,

-3 to V

-18 V

boot

-1 to 618 V

i

-0.3 to V

+0.3 V

CC

Doc ID 15587 Rev 8 5/18

Electrical ratings STGIPS10K60A

Table 5. Total system

Symbol Parameter Value Unit

V

ISO

T

J

T

C

Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60sec.)

(1)

Operating junction temperature -40 to 150 °C

Module case operating temperature -40 to 125 °C

1. The maximum junction temperature rating of the power chips integrated within the SDIP module is 150 °C
(@T

≤ 100 °C). To ensure safe operation of the SDIP module, the average junction temperature should

C

be limited to Tj(avg) ≤ 125 °C (@TC ≤ 100 °C).

2.2 Thermal data

Table 6. Thermal data

Symbol Parameter Value Unit

R

thJC

Thermal resistance junction-case single IGBT max. 3.8 °C/W

Thermal resistance junction-case single diode max. 5.5 °C/W

2500 V

6/18 Doc ID 15587 Rev 8

STGIPS10K60A Electrical characteristics

3 Electrical characteristics

Tj = 25°C unless otherwise specified.

Table 7. Inverter part

Val ue

Symbol Parameter Test conditions

Min. Typ. Max.

Unit

VCC = V
V

IN

I

V

CE(sat)

I

CES

V

Collector-emitter
saturation voltage

Collector-cut off current

(1)

= 0 “logic state”)

(V

IN

Diode forward voltage

F

C

VCC = V
V

IN

I

C

V

CE

V

CC

V

IN

IC = 5 A

Inductive load switching time and energy

t

t

c(on)

t

t

c(off)

t

E

E

1. Applied between HIN

Turn-on time

on

Crossover time (on) - 70 -

Turn-off time - 430 -

off

Crossover time (off) - 135 -

Reverse recovery time - 130 -

rr

Turn-on switching losses - 65 -

on

Turn-off switching losses - 75 -

off

, LINi and GND for i = U, V, W.

i

V

DD

V

CC

V

IN

IC = 5 A
(see Figure 4)

= 15 V,

boot

(1)

= 5 V,

= 5 A

= 15 V,

boot

(1)

= 5 V,

= 5 A, Tj = 125 °C

= 600 V

= V

(1)

= 15 V

boot

= 0 “logic state”,

= 300 V,
= V

(1)

= 15 V,

boot

= 0 ÷ 5 V,

-2.12.5

V

-1.8

- 150 µA

-1.9V

- 320 -

ns

µJ

Note: t

ON

and t

include the propagation delay time of the internal drive. t

OFF

C(ON)

and t

the switching time of IGBT itself under the internally given gate driving condition.

Doc ID 15587 Rev 8 7/18

C(OFF)

are

Electrical characteristics STGIPS10K60A

Figure 3. Switching time test circuit

Figure 4. Switching time definition

100% IC 100% IC

VIN(ON)

VIN

t

rr

VCE

t

ON

10% IC 90% IC 10% VCE

(a) turn-on

t

C(ON)

IC IC

VIN

t

OFF

VIN(OFF)

VCE

t

C(OFF)

10% VCE 10% IC

(b) turn-off

AM09223V1

8/18 Doc ID 15587 Rev 8

STGIPS10K60A Electrical characteristics

3.1 Control part

Table 8. Low supply voltage

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

CCth1

V

CCth2

V

CChys

I

qccu

I

qcc

Under voltage turn on threshold 9.1 9.6 10.1 V

Under voltage turn off threshold 7.9 8.3 8.8 V

Under voltage hystereses 0.9 V

Under voltage quiescent supply
current

< 9 V 0.75 1.2 mA

V

CC

Quiescent current VCC = 15 V 1 1.5 mA

Table 9. Bootstrap supply

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

booth1

V

booth2

V

boothys

I

qboot

R

DS(on)

Table 10. Logic input

Under voltage turn on threshold 8.5 9.5 10.5 V

Under voltage turn off threshold 7.2 8.3 9.2 V

Under voltage hystereses 0.9 V

Quiescent current 250 µA

Bootstrap driver on resistance VCC > 12.5 V 125 Ω

(1)

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

V

I

il

I

ih

1. See Figure 8: Dead time and interlocking definition.

2. Applied between HIN

Low level logic input voltage 1.1 V

il

High level logic input voltage 1.8 V

ih

Low level logic input current V

High level logic input current V

, LINi and GND for i = U, V, W

i

(2)

= 0

IN

(1)

= 15 V 20 70 µA

IN

-1 µA

Doc ID 15587 Rev 8 9/18

Electrical characteristics STGIPS10K60A

3.1.1 NTC thermistor

Table 11. NTC thermistor

Symbol Parameter Test conditions Min. Typ. Max. Unit.

R

25

R

125

B B-constant T

Resistance TC = 25°C 5 kΩ

Resistance TC = 125°C 300 Ω

= 25°C 3435 K

C

T Operating temperature -40 125 °C

Equation 1: resistance variation vs. temperature

1

1

⎛⎞

B

---

--------- -–

⎝⎠

T

RT() R25e

⋅=

298

Where T are temperatures in Kelvins.

Figure 5. NTC resistance vs. temperature

10/18 Doc ID 15587 Rev 8

STGIPS10K60A Electrical characteristics

Figure 6. Maximum I

IC (RMS)

switching frequency

C(RMS)

current vs.

(1)

AM03801v1

Figure 7. Maximum I

(A)

V

= 300 V, Modulation index = 0.8,

PN

PF = 0.6, T

= 150 °C, f

j

SINE

= 60 Hz

12

T

C = 80

10

°C

8

T

C = 100

°C

6

6

410

8 14 16

12

f

sw(kHz)

1. Simulated curves refer to typical IGBT parameters and maximum R

Figure 8. Dead time and interlocking definition

IC (RMS)

(A)

thj-c

current vs. f

(1)

V

= 300 V, Modulation index = 0.8,

PN

PF = 0.6, T

C(RMS)

= 150 °C, Tc = 100 °C

j

SINE

AM03802v1

8

7

6

fsw = 12 kHz

fsw = 16 kHz

5

4

1

fsw = 20 kHz

10

SINE(Hz)

f

.

LIN

HIN

DT DT

LVG

DT

Interlocking function

HVG

AM03794v1

Minimum recommended dead time (DT) between low and high side logic input: 1 µs.

Doc ID 15587 Rev 8 11/18

Applications information STGIPS10K60A

LIN

HIN HVG

OUT

LVG

GND

LIN

HIN HVG

OUT

LVG

GND

LIN

HIN

V

CC

V

boot

HVG

OUT

LVG

GND

NTC

1 2

V

boot

V

boot

V

CC

V

CC

C1

C2

C3

R1

T1

D1

R2

T2

D2

R3

T3

D3

R4

T4

D4

R5

T5

D5

R6

T6

D6

4 Applications information

Figure 9. Typical application circuit

VDC

+

AM01231v1

M

P

boot U

V

OUTU

U

D1

T1

R1

boot

C1

U

HINU

VCC

LIN

U

N

D2

T2

R2

boot V

V

OUTV

V

D3

T3

R3

boot

C2

LINV

GND

HINV

NV

D4

T4

R4

boot W

V

OUTW

W

D5

T5

R5

boot

C3

LINW

HINW

NW

D6

T6

R6

U-Phas e Current

V-Phase Current

W-Phase Current

T1

T2

+15V Line

CONTROLLER

12/18 Doc ID 15587 Rev 8

STGIPS10K60A Applications information

4.1 Recommendations

● Input signal HIN,LIN are active-high logic. A 500 kΩ (typ.) pull down resistor is built-in

for each high side input. If an external RC filter is used, for noise immunity, pay
attention to the variation of the input signal level.

● To prevent the input signals oscillation, the wiring of each input should be as short as

possible.

● By integrating an application specific type HVIC inside the module, direct coupling to

MCU terminals without any opto-coupler is possible.

● Each capacitor should be located as nearby the pins of IPM as possible.

● Low inductance shunt resistors should be used for phase leg current sensing.

● Electrolytic bus capacitors should be mounted as close to the module bus terminals as

possible. Additional high frequency ceramic capacitor mounted close to the module
pins will further improve performance.

Table 12. Recommended operating conditions

Val ue

Symbol Parameter Conditions

Min. Typ. Max.

Unit

V

V

V

t

dead

f

PWM

PN

CC

BS

Supply Voltage Applied between P-Nu, Nv, Nw 300 400 V

Control supply voltage Applied between VCC-GND 13.5 15 16 V

High side bias voltage

Blanking time to

prevent Arm-short

PWM input signal

Applied between V
i = U, V, W

For each input signal 1 µs

-40°C < Tc < 100°C

-40°C < Tj < 125°C

BOOTi

-OUTi for
13 16 V

20 kHz

Doc ID 15587 Rev 8 13/18

Package mechanical data STGIPS10K60A

5 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

Please refer to dedicated technical note TN0107 for mounting instructions.

Table 13. SDIP-25L mechanical data

(mm.)

Dim.

Min. Typ. Max.

A 43.90 44.40 44.90

A1 1.15 1.35 1.55

A2 1.40 1.60 1.80

A3 38.90 39.40 39.90

B 21.50 22.00 22.50

B1 11.25 11.85 12.45

B2 24.70 25.20 25.70

C 5.00 5.40 6.00

C1 6.50 7.00 7.50

C2 11.20 11.70 12.20

e 2.15 2.35 2.55

e1 3.40 3.60 3.80

e2 4.50 4.70 4.90

e3 6.30 6.50 6.70

D33.30

D1 5.55

E11.20

E1 1.40

F 0.85 1.00 1.15

F1 0.35 0.50 0.65

R 1.55 1.75 1.95

T 0.45 0.55 0.65

V0° 6°

14/18 Doc ID 15587 Rev 8

STGIPS10K60A Package mechanical data

Figure 10. SDIP-25L drawing dimensions data

8154676_G

Doc ID 15587 Rev 8 15/18

Package mechanical data STGIPS10K60A

Figure 11. Packaging specifications of SDIP-25L package

16/18 Doc ID 15587 Rev 8

STGIPS10K60A Revision history

6 Revision history

Table 14. Document revision history

Date Revision Changes

16-Apr-2009 1 Initial release.

11-May-2009 2 Added Figure 6 and Figure 7.

17-Jul-2009 3 Reduced V

Document promoted from preliminary data to datasheet.
Inserted Figure 3: Switching time test circuit and Ta bl e 1 2 :

Recommended operating conditions.

06-Apr-2010 4

Updated Tabl e 5 : Tota l s yste m , Table 6: Thermal data, Table 7: Inverter

part, Figure 5: NTC resistance vs. temperature, Figure 6: Maximum
IC(RMS) current vs. switching frequency, Figure 7: Maximum IC(RMS)
current vs. fSINE (1) and Section 5: Package mechanical data.

value on Tab l e 7 .

CE(sat)

15-Jun-2010 5

17-Nov-2010 6

07-Mar-2011 7

04-Nov-2011 8

Updated Table 7: Inverter part.
Minor text changes to improve readability.

Updated Ta b le 3 , 5, 11 and 12.
Modified Figure 6 and Figure 7.

Updated title with SLLIMM™ in cover page, added SDIP-25L tube
dimensions Figure 11 on page 16.

Updated title with SLLIMM™ (small low-loss intelligent molded module)
IPM, 3-phase inverter - 10 A, 600 V short-circuit rugged IGBT in cover
page and SDIP-25L mechanical data Table 13 on page 14, Figure 10

on page 15.

Doc ID 15587 Rev 8 17/18

STGIPS10K60A

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18/18 Doc ID 15587 Rev 8