
rM/AM
AEP
Model
UK
Model
STEREO
RTGE
I[|ER
SPECIFICATIONS
Amplitier
section
Continuous
RMS
power
output
(less
than 0.05%
THD,
both channels driven simultaneously)
At 1 kHz
60
+ 60 watts
(8
ohms)
At 20
Hz
,20
k{z
50 + 50 watts
(8
ohms)
According to
DIN
45500
50 + 50 watts
(8
ohms)
Power
bandwidth
(lHF)
10 Hz 40 kHz
Harmonic distortion Less than
0.0596 at
rated
output
Intermodulation
(lM)
distortion
(60
Hz:7 kHz = 4: 1)
Less than 0.05% at
rated
outout
Damping
factor
50 at 10 kHz, 8 ohms
Dynamic
headroom 1.4
dB
Residual
noise
Less than
250
fV
at I ohms
I nouts
lmpedance
47 k ohms
76 dB
Frequency response
Tone
controls
PHONO : RIAA
equalization
curve r0.5
dB
AUX,
TAPE :
.10
Hz
-100
kHz
+0.5
dB
BASS :
+8
dB at
.100
Hz
TREBLE
:
+8
dB at 10 kHz
SOUND ENHANCER :
+8 dB
(80
Hz)
+ 6 dB
(800
Hz)
+
I dB
(8
kHz)
Accepts low impedance headphones
-
Continued on next
page
-
SAFETY.BELATED
COMPONENT WARNING!
!
COMPONENTS IDENTIFIED
BY
SHADING AND
MARK
A
oN
THE
ScHEMATIc DIAGRAMS,
EXPLoDED
VIEWS AND IN
THE PARTS
LIST ARE
CRITICAL TO
SAFE OPERATION. REPLACË
THESE
COMPONENTS
WITH
SONY PARTS
WHOSE PART
NUMBERS
APPEAR
AS SHOWN IN
THIS
MANUAL
OR
IN
SUPPLEMENTS
PUBLISHED
BY SONY.
SOhTY
50 k ohms 105 dB
50 k ohms
105
dB
Outputs
REC OUT
HEADPHONES
2-5 mV
SPEAKERS
SERVICE
MANUAL

FM
tunor
seclion
Tuning range
Antenna
terminals
Intermediate
f requency
Sensitivily
Usable sensilivity
Signal-to-noise
ratio
Harmonic
distortion
Separation
Frequency
response
Selectivity
Capture
ratio
AM suppression retio
lmage response ratio
lF response
ratio
Spurious
response ratio
FIF intermodulation
Auto tuning level
87.5
-
108.0 MHz
300 ohms balanced, 75
ohms
unbalanced
10.7 MHz
at
46
dB
quieting
17.3 dBf, 4
fV
(mono)
38.3
dBt,
45
fV
(stereo)
10.3
dBf
,
1 .8
riv
(lH
F)
9.3
dBf , 1.6
gV
(S/N
26 dB)
75
dB
(mono),
70
dB
(stereo)
at 1 kHz
0.15%
(mono),
0.3%
(stereo)
45 dB at 1 kHz
40Hz-12.5kxz
1$5oe
30Hz-15kHz
19idB
55
dB
(300
kHz)
-
60 dB
(400
kHz)
r  da
54 dB
80
dB
100 dB
80
dB
60 dB
19.2 dBf
(at
(at
Selectivity
General
System
Power requirements
Power
consumption
AC outlets
Dimensions
Weight
I
Superheterodyne
FM/AM luner,
pure-complementary
sEPP
AEP model:
22O V ac,50/60
Hz
UK model:
24OV ac.50/60
Hz
AEP model:
120 watts
UK model: 32O
watts
2 switched
total 100 W
Approx.
430 x 130 x 330 mm
(w/h/d)
(17
x
5r/r x 13 inches)
Including
proiecting parts
and
controls
Approx.
9.3 kg
(20
lb I oz),
net
Approx.
11.5
kg
(25
lb 6 oz) in shipping
carton
AM tunor soction
MW
LW
unrng
range
522kHz- 1602
kHz 150 kHz
-350
kHz
Antenna
built-in antenna
provided
provided
external antenna
terminal
provided provided
Intermediate
frequency
450 kHz 450 kHz
Usable sensitivity
built-in antenna
50 dB/m
(1,000
kHz) 60 dB/m
(230
kHz)
external antenna
100rrV
(1,000
kHz)
''l00rrV
(230
kHz)
Signal-to-noise
ratio
(at
50 mv/m)
52 dB
52 dB
Harmonic
distortion
(at
50
mV/m, 400 Hz)
0.3%
03%
35 dB
(9
kHz)
35 dB
(9
kHz)
-2-

Generally, the insulation
resistance of
the
oxide
layer in MOS IC structures
is
very
high, and the oxide
layer
is very thin. Because
of
this,
it
is
possible
that
the static
voltages
usually
present
on clothes and
the
human body
will be
enough
to
generate
a
potential
difference across
the insulator,
high enough
to cause
a breakdown
of the insulating
layer.
The
following
precautions
should be taken while
handling these ICs.
(Particular
care should
be taken under conditions
of
low
humidity.)
Precautions
in Replacing
MOS
lCs
l.
Store
new ICs by
inserting them into a urethane-
polyester
cushion
(which
is
somewhat
conduc-
tive),
or wrapping
it in
aluminum
foil,
so that
all the
pins
are at the same
potential.
(The
ICs
should
be stored in that manner until
mounted
on the circuit board.)
Fig. A
partially
conductive
unrethane-polyester
cushion
Fig.
B
aluminum
foil
Handling Precautions for MOS
lCs
soldered
Fis.
D
Fis.
E
Fis. F
-3-
Equalize any
potential
difference between
the
clothes, the tools
in use, the work bench,
the
set being
worked on, and the
packaged
IC by
touching them all in succession
with the hands
or a conductive
wire or tool.
The
following
are
effective methods
for handl-
ing ICs
thai
remove
the
potential
difference
across
the oxide layer.
o
Use
a
paper
clip
modified by soldering
in a
wire braid
insert.
J.
4.
2.
Check
the soldering
iron for
possible power-line
leakage current.
Make sure that there is
no
leakage
path
by connecting
an ohmmeter to the
tip
of the soldering iron and the
plug
as shown
in Fig.
C.
If there is a leakage
path,
use some
other
soldering
iron.
VOM
(9x
1O.0OO range)
Make sure
that there
is
no solder on
the inside.
cltp
soldered
partially
conductive
urethane-polyester
cushion
or
aluminum
foil
Make
sure that
all the
pins
are in
contact
with the wire braid
hll
the
pins
will then be
at the same
potential.).
wire braid
wire braid

o
Take a short
length
of fine bare
wire
and
wind it
around
the IC so that
it
shorts
all
the
pins
of the
IC, while
it is still in the urethane-
polyester
cushion
or
aluminum foil.
This
ensures
that
all the
pins
are
at the same
potential.
fine
bare wire
(stripped
solid
hookup
wtre.
etc.
)
Precaution
while Checking C-MOS
lCs
The
C-MOS
ICs
(Complementary
MOS) are MOS
ICs
that have
their
output sections
made
up of
N-channel and
P-channel
push-pull
stages
to increase
their speed
of
operation. If
the output terminal of
these ICs comes into contact
with
B+
or
B-
voltage,
then the FET which is
ON
at that time
will
either
become shorted or open.
This
is
valid for
all the output sections that are
connected together by
the interconnections.
Even
the circuits that are
physically
separated
(and
not on
the
same board) can be destroyed simultaneously.
Example:
If this
line is
grounded,
or touches
B+ or B- bus.
.
. , the
output stage
of
this lC will be destroyed.
Fis.
I
I
partially
conductive
u rethane-polyester
cushion or aluminum
foil
Fis.
G
o
When
it is necessary to handle
the
IC
with
the
fingers, do not
touch
any
pin,
and hold
the IC at the
ends of
its
plastic-package
case
as shown
in Fie.
H.
Fis.
H
5. Method
of Mounting
Insert the IC
while holding it with the modified
clip, and solder
all the
pins
with the
clip
still
shorting the
pins. (Similarly,
solder
all the
pins
while
the bare shorting
wire is
still
wound
around them.).
Re'move the clip
or the
bare
shorting
wire
only
after
all the
pins
have been
soldered.
-4-

Pin
No.
Pin Name
Input/Output
Function
20 M-IND
Output
Signal output which
indicates
manual
station selection
state.
N
channel
open drain
output form
(at
low
during manual station
selection).
Not
used
in this model.'
2l
Vnl
-
LSI
power
supply; During operation:
+9V;
Back-up:
+5V
22
MUTE
Outpul
-
Output
terminal for control
signal which eliminates
undesirable
noise during
station
selection.
-
At high during
search,
preset
station selection
and band
switching.
ZJ F-Tune
Output
Fine
tuning
output
terminal.
Generates
voltage
for
fine
tuning
by connecting
with
low
pass
filter.
Adjusts
voltage
at mixing
resistor
and loads
it
to ladder
output
voltage
(50%
duty
signal except
during
fine
tuning:
T
=
1.5 msec).
Outputs
8 stage
pulse
modulation
signal
during fîne
tuning.
24 Vref
-
Reference
voltage
(+8V)
for
D/A
converter,
comparator.
25-34 Bl-Bl0
Output
Output for
l0 bit-
UP/DOWN
counter
(including
ladder.buffer).
Performs
D/A
conversion
bv connectins
ladder resistor.
3s
Vss
-
GND terminal
of LSI
36-42
CHl_CH7
Input/Output
Channel
input
terminal.
output
terminal for
station reception
indication.
(including
N channel
open
drain form
LED
driver.)
At low,
memorized
station
is
selected.
when
MEMô
terminal
is
at low.
and any one
of
cFI
t
-cH5
goes
low,
the station
being
received
is memorized.
Hold
at low for
station
selection
or memory for
more
than 20 msec.
Note: A
ex:
terminal with
bar over its name
operates when
OV is
apptied.
Fil,_
-8-

FUNCTIONS
OF IC
305 TERMINALS
Pin
No
Pin Name
Input
Outpul
Function
I Vno
.
B+
power
supply
2
PO\ryER
.oN
Input
o
Achieves back-up state of the internal
memory and flip-flop at low level.
o
Achieves operation
state at
high level.
3
I!-il.{D IN lnput
o
When low level is maintained
in band division state
(F/A
IN:
low level),
enables
alternate
designation of the band
with AM
input.
o
When the
terminal
M-IND IN
and
CHI - CH7 are high level at band division state
(F/A
IN:
low level),
enables
alternate designation
of
the band with VT
UPiDOWN
terminal.
4 MEMO IN
Input
.
Input terminal of band memory.
o
When at low,
and terminals eHl
-
CH7 trotd at low for more
than 2Omsec, enables
memorization of the band being received
(BAND
I or BAND II).
o
Employed by connecting in
parallel
with the terrninal
MEMO of IC
303
(LC'1207).
5
w
uP/DOWN
Input
.
Input terminal
which
designates the
band
(BAND
I/BAND II)
alternately by receiving
the
leading
or
trailing
differentiation signal of automatic search sweep
voltage
(UP
SEARCH).
6
F/A IN Input
r
Employed by connecting to the
terminal
F/A
OUT
of IC
303
(LC72O7).
.
At
low level, achieves
the band division state.
BAND-(ii)
Output
o
At low level,
designates
the band II.
r
When
the terminal
(F/A
IN
is at
high level, achieves
the band
division stâte
(low
level
or
high
level).
8
BAND(I)
Output
.
At low level, designates
the
band I-
.
When
the terminal
AM
is
low, achieves
the
band
division state
(low
or high).
When the terminal
F/A IN is high
level, the output of this terminal becomes in
high level.
9
AM
Input
r
When the terminal
Ni:IND-TN
is
low at band division state
(F/A
IN:
low level), becomes
the input
which
designates
the toggle operation
of
bands
(BAND
I/BAND II)
(chatter
time:
6 - 12
msec)
.
At
low level, either the terminalEÂNDI-orBA-ND-lf
goes
simultaneously low.
o
Not used in this model.
10
CLK
Input
o
Employed by connecting
in
paraÏel
with the
terminal CRI or IC303
(LC7207).
o
Input for LC7000 system clock.
11
l,
t'l
cHl-CH7
Input
o
Employed by connecting in
parallel
with terminals CHI - CH7
of IC
303
(at
low level,
channel band
designation is
performed)
.
Input terminal of
band designation
(BAND
I/BAND
II)
of each channel
(CH1
-
CH7).
o
Priority during simultaneous
designations.
18
Vss
o
B-
power
supply
t9
RST
Input
.
When
this terminal
goes
high, internal
memory and
flip-flop are
reset.
20
MUTE
Output
.
Outputs
the
muting signal
(high
level)
when depressing
simultaneously
the channel
switch
(cHl
-
cH7).