SONY STR8656 Diagram

PRELIMINARY

CGH40010

10 W, RF Power GaN HEMT

Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solderdown, pill packages.

Package				&
PN’s:	Types: 440166,				440196
	CGH40010F &
			CGH40010P

FEATURES		APPLICATIONS
• Up to 4 GHz Operation		•	2-Way Private Radio
• 16 dB Small Signal Gain at 2.0 GHz		•	Broadband Amplifiers
• 14 dB Small Signal Gain at 4.0 GHz		•	Cellular Infrastructure
• 13 W typical P3dB		•	Test Instrumentation
•	65 % Efficiency at P3dB	• Class A, AB, Linear amplifiers suitable
•	28 V Operation		for OFDM, W-CDMA, EDGE, CDMA
			waveforms

7 0 0 2

l i r p A

–

4 . 1

v e R

	Subject to change without notice.
	www.cree.com/wireless

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter	Symbol	Rating	Units
Drain-Source Voltage	VDSS	84	Volts
Gate-to-Source Voltage	VGS	-10, +2	Volts
Storage Temperature	TSTG	-55, +150	˚C
Operating Junction Temperature	TJ	175	˚C
Maximum Forward Gate Current	IGMAX	4.0	mA
Soldering Temperature	TS	245	˚C
Thermal Resistance, Junction to	RθJC	5.0	˚C/W
Case 1

Note:

1 Measured for the CGH40010F at PDISS = 14 W.

Electrical Characteristics (TC = 25˚C)

Characteristics	Symbol	Min.	Typ.	Max.	Units	Conditions
DC Characteristics4
Gate Threshold Voltage	VGS(th)	-3.0	-2.5	-1.8	VDC	VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage	VGS(Q)	–	-2.0	–	VDC	VDS = 28 V, ID = 200 mA
Saturated Drain Current	IDS	2.4	2.7	–	A	VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage	VBR	84	100	–	VDC	VGS = -8 V, ID = 3.6 mA
Case Operating Temperature	TC	-10	–	+105	˚C
Screw Torque	T	–	–	60	in-oz	Reference 440166 Package Revision 3
RF Characteristics (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain	GSS	13.5	14.5	–	dB	VDD = 28 V, IDQ = 200 mA
Power Output at 3 dB	P3dB	10	12.5	–	W	VDD = 28 V, IDQ = 200 mA
Compression
Drain Efficiency1,2	η	55	65	–	%	V	DD	= 28 V, I	= 200 mA, P
								DQ	3dB
						No damage at all phase angles,
Output Mismatch Stress	VSWR	–	TBD	–	Y	VDD = 28 V, IDQ = 200 mA,
						POUT = 12 W CW
Dynamic Characteristics
Input Capacitance	CGS	–	5.00	–	pF	VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance	CDS	–	1.32	–	pF	VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance	CGD	–	0.43	–	pF	VDS = 28 V, Vgs = -8 V, f = 1 MHz

Notes:

1Drain Efficiency = POUT / PDC

2When tuned for best efficiency (see the applications chart in this data sheet).

3When tuned for best P1dB (see the applications chart in this data sheet).

4Measured on wafer prior to packaging.

Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40010 Rev 1.4 Preliminary

Cree, Inc. 4600 Silicon Drive Durham, NC 27703

USA Tel: [phone] Fax: [phone] www.cree.com/wireless

Typical Performance

Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for Drain Efficiency at 2.0 GHz

VDD = 28 V, IDQ = 200 mA, Freq = 2.0 GHz

	18								80
	17								70
									60
	16								50	(%)
Gain (dB)										K (Drain Efficiency)
	15								40
	14								30
									20
	13								10
	12								0
	26	28	30	32	34	36	38	40	42

Pout (dBm)

Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for Drain Efficiency at 3.6 GHz VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz

	16										80
											72
	15										64
	14										56	(%)
Gain (dB)											48	K (Drain Efficiency)
	13										40
											32
	12										24
	11										16
											8
	10										0
	23	25	27	29	31	33	35	37	39	41	43

Pout (dBm)

Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40010 Rev 1.4 Preliminary

Cree, Inc. 4600 Silicon Drive Durham, NC 27703

USA Tel: [phone] Fax: [phone] www.cree.com/wireless

Typical Performance

Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for P1 Power at 3.6 GHz VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz

	14										60
											54
	13										48
	12										42	(%)
Gain (dB)											36	K (Drain Efficiency)
	11										30
											24
	10										18
	9										12
											6
	8										0
	23	25	27	29	31	33	35	37	39	41	43

Pout (dBm)

Simulated Maximum Stable Gain, Maximum Available

Gain and K Factor of the CGH40010F

VDD = 28 V, IDQ = 200 mA

30				1.5
25				1.13
20				0.75
MSG, MAG(dB)				KFactor
15				0.375
10				0
0.5	1.5	2.5	3.5	4.5
		Frequency (GHz)

Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40010 Rev 1.4 Preliminary

Cree, Inc. 4600 Silicon Drive Durham, NC 27703

USA Tel: [phone] Fax: [phone] www.cree.com/wireless