SONY STR8656 Diagram
Subject to change without notice.
www.cree.com/wireless
PRELIMINARY
CGH40010
10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40010, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efciency, high gain and wide bandwidth capabilities making
the CGH40010 ideal for linear and compressed amplier circuits.
The transistor is available in both screw-down, ange and solder-
down, pill packages.
FEATURES
Up to 4 GHz Operation
•
16 dB Small Signal Gain at 2.0 GHz
•
14 dB Small Signal Gain at 4.0 GHz
•
13 W typical P
•
65 % Efciency at P3dB
•
28 V Operation
•
3dB
APPLICATIONS
•
•
•
•
•
Package Types: 440166, & 440196
PN’s: CGH40010F & CGH40010P
2-Way Private Radio
Broadband Ampliers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear ampliers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
7
0
0
2
l
i
r
p
A
–
4
.
1
v
e
R
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units
Drain-Source Voltage V
Gate-to-Source Voltage V
Storage Temperature T
Operating Junction Temperature T
Maximum Forward Gate Current I
Soldering Temperature T
Thermal Resistance, Junction to
1
Case
Note:
1
Measured for the CGH40010F at P
= 14 W.
DISS
GMAX
R
DSS
GS
STG
J
S
θJC
84 Volts
-10, +2 Volts
-55, +150 ˚C
175 ˚C
4.0 mA
245 ˚C
5.0 ˚C/W
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics
Gate Threshold Voltage V
Gate Quiescent Voltage V
Saturated Drain Current I
Drain-Source Breakdown Voltage V
Case Operating Temperature T
Screw Torque T – – 60 in-oz Reference 440166 Package Revision 3
RF Characteristics (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain G
Power Output at 3 dB
Compression
Drain Efciency
Output Mismatch Stress VSWR – TBD –
Dynamic Characteristics
Input Capacitance C
Output Capacitance C
Feedback Capacitance C
Notes:
1
Drain Efciency = P
2
When tuned for best efciency (see the applications chart in this data sheet).
3
When tuned for best P
4
Measured on wafer prior to packaging.
4
GS(th)
GS(Q)
DS
BR
C
SS
P
3dB
1,2
η
-3.0 -2.5 -1.8 VDC VDS = 10 V, ID = 3.6 mA
– -2.0 – VDC VDS = 28 V, ID = 200 mA
2.4 2.7 – A VDS = 6.0 V, VGS = 2.0 V
84 100 – VDC VGS = -8 V, ID = 3.6 mA
-10 – +105 ˚C
13.5 14.5 – dB VDD = 28 V, IDQ = 200 mA
10 12.5 – W VDD = 28 V, IDQ = 200 mA
55 65 – % VDD = 28 V, IDQ = 200 mA, P
3dB
No damage at all phase angles,
GS
DS
GD
/ P
OUT
DC
(see the applications chart in this data sheet).
1dB
– 5.00 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
– 1.32 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
– 0.43 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Y
VDD = 28 V, IDQ = 200 mA,
P
= 12 W CW
OUT
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
2
CGH40010 Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Typical Performance
12
13
14
15
16
17
18
26 28 30 32 34 36 38 40 42
Pout (dBm)
Gain (dB)
0
10
20
30
40
50
60
70
80
K
(Drain Efficiency) (%)
10
11
12
13
14
15
16
23 25 27 29 31 33 35 37 39 41 43
Pout (dBm)
Gain (dB)
0
8
16
24
32
40
48
56
64
72
80
K
(Drain Efficiency) (%)
Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for Drain Efciency at 2.0 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 2.0 GHz
Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for Drain Efciency at 3.6 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
3
CGH40010 Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Typical Performance
8
9
10
11
12
13
14
23 25 27 29 31 33 35 37 39 41 43
Pout (dBm)
Gain (dB)
0
6
12
18
24
30
36
42
48
54
60
K
(Drain Efficiency) (%)
0.5 1.5 2.5 3.5 4.5
Frequency (GHz)
10
15
20
25
30
0
0.375
0.75
1.13
1.5
Swept CW Data of CGH40010F vs. Output Power with Source
and Load Impedances Optimized for P1 Power at 3.6 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz
Simulated Maximum Stable Gain, Maximum Available
Gain and K Factor of the CGH40010F
VDD = 28 V, IDQ = 200 mA
MSG, MAG (dB)
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
4
CGH40010 Rev 1.4 Preliminary
K Factor
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
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