Sony BU323Z, BU323ZG Service Manual
BU323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
• Integrated High−Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the −40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
• High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
• Offered in Plastic SOT−93/TO−218 Type or
TO−220 Packages
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Sustaining Voltage V
Collector−Emitter Voltage V
Collector Current − Continuous
− Peak
Base Current − Continuous
− Peak
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction Temperature
Range
CEO
EBO
I
I
CM
I
I
BM
P
TJ, T
C
B
D
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
R
q
JC
T
L
stg
350 Vdc
6.0 Vdc
10
20
3.0
6.0
150
1.0
–65 to
+175
1.0
260
W/_C
_C/W
Adc
Adc
W
_C
_C
http://onsemi.com
10 AMPERE DARLINGTON
AUTOPROTECTED
360 − 450 VOLTS CLAMP,
150 WATTS
360 V
CLAMP
COLLECTOR 2,4
BASE
1
EMITTER 3
4
SOT−93
1
2
3
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
BU323Z = Device Code
CASE 340D
STYLE 1
ORDERING INFORMATION
Device Package Shipping
BU323Z SOT−93 30 Units / Rail
BU323ZG SOT−93
(Pb−Free)
MARKING
DIAGRAM
AYWW
BU323ZG
30 Units / Rail
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 14
1 Publication Order Number:
BU323Z/D
BU323Z
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS (1)
Collector−Emitter Clamping Voltage (IC = 7.0 A)
= − 40°C to +125°C)
(T
C
Collector−Emitter Cutoff Current
(V
= 200 V, IB = 0)
CE
Emitter−Base Leakage Current
(V
= 6.0 Vdc, IC = 0)
EB
ON CHARACTERISTICS (1)
Base−Emitter Saturation Voltage
(I
= 8.0 Adc, IB = 100 mAdc)
C
= 10 Adc, IB = 0.25 Adc)
(I
C
Collector−Emitter Saturation Voltage
(I
= 7.0 Adc, IB = 70 mAdc)
C
(I
= 8.0 Adc, IB = 0.1 Adc)
C
(I
= 10 Adc, IB = 0.25 Adc)
C
= 125°C)
(T
C
(T
= 125°C)
C
Base−Emitter On Voltage
(I
= 5.0 Adc, VCE = 2.0 Vdc) (TC = − 40°C to +125°C)
C
= 8.0 Adc, VCE = 2.0 Vdc)
(I
C
Diode Forward Voltage Drop
(I
= 10 Adc)
F
DC Current Gain
(I
= 6.5 Adc, VCE = 1.5 Vdc) (TC = − 40°C to +125°C)
C
= 5.0 Adc, VCE = 4.6 Vdc)
(I
C
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
= 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
C
Output Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Input Capacitance
(V
= 6.0 V)
EB
CLAMPING ENERGY (see notes)
Repetitive Non−Destructive Energy Dissipated at turn−off:
(I
= 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4)
C
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
Storage Time t
Cross−over Time t
(IC = 6.5 A, IB1 = 45 mA,
V
= 0, R
BE(off)
= 14 V, VZ = 300 V)
V
CC
BE(off)
= 0,
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle = 2.0%.
Symbol Min Typ Max Unit
V
CLAMP
I
CEO
I
EBO
V
BE(sat)
V
CE(sat)
V
BE(on)
h
C
C
W
CLAMP
V
F
FE
f
T
ob
ib
t
fi
si
c
350 — 450 Vdc
— — 100 μAdc
— — 50 mAdc
Vdc
—
—
—
—
2.2
2.5
Vdc
—
—
—
—
—
—
—
—
—
—
1.6
1.8
1.8
2.1
1.7
Vdc
1.1
1.3
—
—
2.1
2.3
— — 2.5 Vdc
—
150
500
—
—
—
3400
— — 2.0 MHz
— — 200 pF
— — 550 pF
200 — — mJ
— 625 — ns
— 10 30 μs
— 1.7 — μs
http://onsemi.com
2
Loading...