Siemens STM81005G, STM81005A, STM81004G, STM81004A Datasheet
Semiconductor Group 1 02.95
1550 nm Laser in Coaxial Package with SM-Pigtail,
Medium Power
STM 81004X
STM 81005X
• Designed for application in fiber-optic networks
• Laser diode with Multi-Quantum Well structure
• Suitable for bit rates up to 1 Gbit/s
• Ternary photodiode at rear mirror for monitoring and
control of radiant power
• Hermetically sealed subcomponent, similar to TO 18
• SM Pigtail with optional flange
Type Ordering Code Connector/Flange
STM 81004G Q62702-Pxxxx FC / without flange
STM 81004A Q62702-Pxxxx DIN / without flange
STM 81005G Q62702-Pxxxx FC / with flange
STM 81005A Q62702-Pxxxx DIN / with flange
Component with other connector types on request.
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter Symbol
Values
Unit
Module
Operating temperature range at case T
C
−
40 … + 85
°C
Storage temperature range T
stg
−
40 … + 85
°C
Soldering temperature
t
max
= 10 s, 2 mm distance from bottom edge of
case
T
S
260
°C
STM 81004X
STM 81005X
Semiconductor Group 2
Maximum Ratings (cont’d)
Parameter Symbol
Values
Unit
Laser Diode
Direct forward current I
F max
120
mA
Radiant power CW Φ
e
2
mW
Reverse voltage V
R max
2
V
Monitor Diode
Reverse voltage V
R max
10
V
Characteristics
All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C.
Parameter Symbol
Values
Unit
Laser Diode
Optical output power Φ
e
> 1.2
mW
Emission wavelength center of range
Φe = 0.5 mW
λ
1510 … 1590
nm
Spectral bandwidth Φe = 0.5 mW (RMS) ∆
λ
< 5
nm
Threshold current (− 40 … + 85 °C) I
th
8 … 60
mA
Forward voltage Φe = 0.5 mW V
F
< 1.5
V
Radiant power at threshold Φ
eth
< 40
µW
Slope efficiency η
20 … 100
mW/A
Differential series resistance r
S
< 8
Ω
Rise time/fall time tR, t
F
< 1
ns
Monitor Diode
Dark Current, VR = 5 V, Φe = 0 I
R
< 500
nA
Photocurrent, Φe = 0.5 mW I
P
100 … 1000
µA
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