Siemens STM51005A, STM51005G, STM51004G, STM51004A Datasheet

1300 nm Laser in Receptacle Package,

Values

40 … + 85

40 … + 85

260

120

2

2

Medium Power

STM 51004X
STM 51005X

• Designed for application in fiber-optic networks

• Laser Diode with Multi-Quantum Well structure

• Suitable for bit rates up to 1 Gbit/s

• Ternary photodiode at rear mirror for monitoring

and control of radiant power

• Hermetically sealed subcomponent, similar to TO 18

• SM Pigtail with optional flange

Type Ordering Code Connector/Flange

STM 51004G Q62702-P3001 FC / without flange
STM 51004A Q62702-P3050 DIN / without flange
STM 51005G Q62702-P3061 FC / with flange
STM 51005A Q62702-P3056 DIN / with flange

Maximum Ratings

Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.

Parameter Symbol

Unit

Module

Operating temperature range at case T
Storage temperature range T
Soldering temperature

t

= 10 s, 2 mm distance from bottom edge of

max

C

stg

T

S

−

−

°C
°C
°C

case

Laserdiode

Direct forward current I

F max

mA
Radiant power CW Φ
Reverse voltage V

e

R max

Semiconductor Group 1 02.95

mW

V

Maximum Ratings (cont’d)

Values

10

Values

> 1.2

1280 … 1330

λ

< 5

2 … 45

< 1.5

< 40

20 … 100

< 8

< 1

< 500

100 … 1000

STM 51004X
STM 51005X

Parameter Symbol
Monitor Diode

Reverse voltage V

R max

Characteristics

All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C.

Parameter Symbol
Laser Diode

Optical output power Φ
Emission wavelength center of range

e

λ

Φe = 0.5 mW
Spectral bandwidth Φe = 0.5 mW (RMS) ∆

Unit

V

Unit

mW
nm

nm
Threshold current (− 40 … + 85 °C) I
Forward voltage Φe = 0.5 mW V
Radiant power at threshold Φ

th

F

eth

Slope efficiency η
Differential series resistance r

S

Rise time/Fall time tR, t

Monitor Diode

Dark current, VR = 5 V, Φe = 0 I
Photo current, Φe = 0.5 mW I

R

P

mA

V

µW

mW/A

Ω

F

ns

nA

µA

Semiconductor Group 2