Siemens STM 51004X, STM 51005X Technical data
Values
40 … + 85
40 … + 85
260
120
2
2
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1300 nm Laser in Receptacle Package,
Medium Power
STM 51004X
STM 51005X
• Designed for application in fiber-optic networks
• Laser Diode with Multi-Quantum Well structure
• Suitable for bit rates up to 1 Gbit/s
• Ternary photodiode at rear mirror for monitoring
and control of radiant power
• Hermetically sealed subcomponent, similar to TO 18
• SM Pigtail with optional flange
Type Ordering Code Connector/Flange
STM 51004G Q62702-P3001 FC / without flange
STM 51004A Q62702-P3050 DIN / without flange
STM 51005G Q62702-P3061 FC / with flange
STM 51005A Q62702-P3056 DIN / with flange
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter Symbol
Unit
Module
Operating temperature range at case T
Storage temperature range T
Soldering temperature
t
= 10 s, 2 mm distance from bottom edge of
max
C
stg
T
S
−
−
°C
°C
°C
case
Laserdiode
Direct forward current I
F max
mA
Radiant power CW Φ
Reverse voltage V
e
R max
Semiconductor Group 1 02.95
mW
V
Maximum Ratings (cont’d)
Values
10
Values
> 1.2
1280 … 1330
λ
< 5
2 … 45
< 1.5
< 40
20 … 100
< 8
< 1
< 500
100 … 1000
STM 51004X
STM 51005X
Parameter Symbol
Monitor Diode
Reverse voltage V
R max
Characteristics
All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C.
Parameter Symbol
Laser Diode
Optical output power Φ
Emission wavelength center of range
e
λ
Φe = 0.5 mW
Spectral bandwidth Φe = 0.5 mW (RMS) ∆
Unit
V
Unit
mW
nm
nm
Threshold current (− 40 … + 85 °C) I
Forward voltage Φe = 0.5 mW V
Radiant power at threshold Φ
th
F
eth
Slope efficiency η
Differential series resistance r
S
Rise time/Fall time tR, t
Monitor Diode
Dark current, VR = 5 V, Φe = 0 I
Photo current, Φe = 0.5 mW I
R
P
mA
V
µW
mW/A
Ω
F
ns
nA
µA
Semiconductor Group 2
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