Siemens STL51007G Datasheet
Semiconductor Group 1 02.95
1300 nm Laser in Receptacle Package,
Low Power
STL 51007X
• Designed for application in fiber-optic networks
• Laser diode with Multi-Quantum Well structure
• Suitable for bit rates up to 1 Gbit/s
• Ternary photodiode at rear mirror for monitoring and
control of radiant power
• Hermetically sealed subcomponents, similar to TO 18
• SM Receptacle with 2- hole flange
Type Ordering Code Connector/Flange
STL 51007G Q62702-P3004 FC, 2-hole
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter Symbol
Values
Unit
Module
Operating temperature range at case T
C
−
40 … + 85
°C
Storage temperature range T
stg
−
40 … + 85
°C
Soldering temperature
t
max
= 10 s, 2 mm distance from bottom edge of
case
T
S
260
°C
Laser Diode
Direct forward current I
F max
120
mA
Radiant power CW Φ
e
1
mW
Reverse voltage V
R max
2
V
Monitor Diode
Reverse voltage V
R max
10
V
STL 51007X
Semiconductor Group 2
Characteristics
All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C.
Parameter Symbol
Values
Unit
Laser Diode
Optical output power Φ
e
> 0.4
mW
Emission wavelength center of range
Φe = 0.2 mW
λ
1280 … 1330
nm
Spectral bandwidth Φe = 0.2 mW (RMS) ∆
λ
< 5
nm
Threshold current (− 40 … + 85 °C) I
th
2 … 45
mA
Forward voltage Φe = 0.2 mW V
F
< 1.5
V
Radiant power at threshold Φ
eth
< 10
µW
Slope efficiency η
8 … 60
mW/A
Differential series resistance r
S
< 8
Ω
Rise time/fall time
t
R
, t
F
< 1
ns
Monitor Diode
Dark current, VR = 5 V, Φe = 0 I
R
< 500
nA
Photocurrent, Φe = 0.2 mW I
P
100 … 1000
µA
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